Abstract: In order to eliminate the effect of water attack on silica optical fibres, the fibres are provided with a surface layer of silicon nitride or silicon oxynitride. The method proposed comprises direct nitridation. This may be achieved by adding a nitriding atmosphere to the drawing furnace gases, or to the reactive gases (TiCl.sub.4 and SiCl.sub.4) incorporated in the flame of an oxyhydrogen torch for the formation of a compressive silica/titania layer on an optical fibre by a glass soot deposition and sintering process.

Abstract: Alkali and/or salts of compounds of the formula: ##STR1## wherein R.sub.1 and R.sub.2 independently are H or C.sub.1-6 -alkyl and R.sub.3 is CH.dbd.CH, (CH.sub.2).sub.2 or (CH.sub.2).sub.3, are used as metal corrosion inhibitors in aqueous systems.

Abstract: An apparatus for granulating metallurgical melt, including a granulator (1) having a water supply (13), a trough (2) for supplying metallurgical melt thereto, and a rotary driven drum (3) having blades (6). A water tank (11) having an overflow device (12) is disposed under the drum (3). The granulator (1) and trough (2) are disposed in the interior of the drum (3), the lower part of the drum being disposed in the tank (11) below the overflow device (12), The apparatus is provided with a trough (22) for discharging granules from the drum (3).

Abstract: A method for consolidating a porous glass preform is provided in which a preform is placed in a stationary elongated chamber and selected portions of the chamber, distributed along the chamber's length, are sequentially heated above the preform's sintering temperature. In certain preferred embodiments, the chamber is surrounded by an elongated susceptor and the heating is performed by moving an induction heating coil along a path parallel to the longitudinal axes of the susceptor and the chamber.

Abstract: A heating oven is provided for processing glass materials, e.g., porous glass preforms, from which optical waveguide fibers are prepared. The oven includes a stationary elongated chamber, e.g., a silica muffle, for receiving the glass material which is to be processed. At least a portion of the chamber is surrounded by a stationary susceptor. The chamber is heated by moving an energized induction heating coil along a path parallel to the longitudinal axes of the susceptor and the chamber.

Abstract: Removal of ceramic thermal barrier coatings from metallic substrates is achieved by contacting the coated article with fluorine containing gas at an elevated temperature. The gas penetrates the ceramic to attack the interface between the substrate and ceramic causing the ceramic to spall.

Abstract: A reduction in the number of impurities and defects on a semiconductor wafer is provided by cleaning the wafer in a hydrochloric acid, hydrofluoric acid, and water solution. This HCl:HF:H.sub.2 O solution removes silicon dioxide as well as metallic impurities from the wafer surface, thus preventing the formation of defects on the wafer and increasing the quality and yield of semiconductor devices.

Abstract: A biological test pack adapted for use in testing the efficacy of an ethylene oxide sterilization process is described. The test pack is a clear plastic tray containing an sterilization sensitive ink which has been imprinted on a card which faces out of the bottom of the plastic tray. In addition, the tray contains a plastic syringe which holds a biological indicator. On top of the plastic syringe, absorbent paper is placed. The entire pack has a Tyvek sheet which seals it until it is used. The plastic tray is molded into a shape for holding the various items in particularly desirable locations. Accordingly, a disposable test pack which is uniformly manufactured and which should yield consistent results, is described. It can be used either as a general purpose routine test pack or as a validation challenge test pack.

Abstract: A method for forming vertical metal interconnects on a semiconductor substrate having an uneven surface comprises first forming a laminated metal structure over the entire substrate. The laminated metal structure includes a first metallization sublayer, an intermediate etch stop barrier layer, and a second metallization sublayer. Usually, a barrier layer will be formed between the substrate and the laminated metal structure. The laminated metal structure is then patterned into the desired vertical metal interconnects, which interconnects are at different elevations because of the uneven underlying surface. The vertical metal interconnects are then planarized by first applying a dielectric layer and a sacrificial layer, etching back the combined dielectric and sacrificial layers to expose only the higher vertical metal interconnects, and then selectively etching back the second metal sublayer component of the higher vertical metal interconnects.

Abstract: A recirculating, high velocity hot impingement air sterilizer has an inner housing that defines a chamber adapted to receive dental instruments or the like to be sterilized by hot impingement air jets flowed through the chamber by a compact fan, duct and heating coil assembly exteriorly secured to the inner housing. A specially designed insulating jacket structure envelopes and removably receives the inner housing, the jacket structure having a flexible, hollow outer skin portion filled with and captively retaining a suitable insulating material. The jacketed inner housing is received within an outer housing and defines therein a cooling space which extends around a major portion of the insulating jacket structure. Cooling air is flowed through such cooling space by a small fan secured to the inner surface of a removable back panel portion of the outer housing.

Abstract: The present invention relates to a process for wet metal-plating of ceramic substrates. More particularly this invention relates to the wet chemical copper plating of Al.sub.2 O.sub.3 ceramics. It is essentially composed of a combined chemical pretreatment of the ceramic surface for chemical metallization without external electric current in such a manner that within only a single pretreatment step the substrate surface is chemically activated and is simultaneously covered with an adhesion promoter, and/or a sensitizer and/or an activator (catalyst).

Abstract: A method for anisotropically etching an aperture into a monocrystaline substrate such that the angle of the aperture plane with respect to the nominal crystaline planes of the substrate may be preselected. Etchant pits through opposing planar surfaces are offset from one another by a preselected longitudinal offset trigonometrically related to the desired aperture angle. Other selected parameters trigonometrically related to the aperture plane include: the intersecting angle of the intersecting crystaline planes with the nominal crystaline planes; substrate thickness; and depth of each of the etchant pits.

Abstract: An improved process of RIE plasma attack of the layer of dielectric material on the surface of wafers of semiconductor material, in correspondence of areas purposely defined by masking, for exposing the underlying semiconductor crystal, in preparation for depositing a layer of material of metallic conduction. After having removed a certain thickness of dielectric according to the known technique, the conditions of attack are modified, substituting the plasma gases and reducing the "bias". The attack is resumed of the residual layer of dielectric and preferably also of a certain thickness of the semiconductor crystal in the same reactor. Ohmic contacts with relatively low contact resistance and great reliability are obtained with a minimum handling of the wafers.

Abstract: An apparatus for etching supports that have deposited thereon an etchable metal with an etching medium, which apparatus includes an etching chamber, means to convey the supports with metal deposited thereon through the etching chamber, a plurality of nozzles which are positioned to spray etching medium containing acid on the supports as they move through the etching chamber, a sump for receiving residual etching medium withdrawn from the etching chamber, a first circulating system for circulating residual etching medium from the sump back to the plurality of nozzles, a reservoir for an oxidizing agent, a device for regulating the addition of oxidizing agent into the circulating system in an amount which is stoichiometrically in excess of that required to remove metal from the supports, a chamber containing a metal which will react with the oxidizing agent, a second circulating system for circulating residual etching medium from the sump through the chamber containing a metal, a regenerating chamber to receive

Abstract: A method for the construction of submicron features using optical lithography technology. A material is deposited on a surface to be etched, this material is partially etched through using optical lithography technology. Sidewalls are deposited to reduce the size of this etched area to the submicron size desired. The etch of the layer is then completed resulting in a submicron mask for the substrate below.

Abstract: A mounting assembly for an exhaust gas catalyst and a method for manufacturing the same includes a metallic exhaust gas catalyst carrier body formed of a multiplicity of layers, at least one first brazed joint interconnecting the layers, a metallic tubular jacket in which the catalyst carrier body is disposed, and one second brazed joint fastening the catalyst carrier body to the tubular jacket while permitting lengthwise expansion of the catalyst carrier body relative to the tubular jacket.

Abstract: An automatic digestion system (10) is provided for digesting a continuous stream of wastewater prior to its analysis by a spectrometer system (12). The digestion system (10) includes a first metering pump (34) for drawing a continuous stream of wastewater (36) from a wastewater source (32). A second metering pump (38) draws a continuous stream of diluted nitric acid (40) from a source of acid (42) and mixes the acid with the wastewater to provide a stream of acidified wastewater (46). The acidified wastewater (46) is then heated, to digest the wastewater prior to its input into the spectrometer system (12).

Abstract: An intermittent etching process for forming efficiently by reactive ion etching (RIE), a minute recess, such as a groove having an opening width as small as about 0.1 .mu.m, with a large aspect ratio in layers of metals, semiconductors, etc. The process comprises alternating RIE steps of brief duration e.g. 30 seconds with vacuumizing for evacuating gaseous reaction products produced in the RIE step from the etched recess. The process is particularly suitable for formation of a bridging portion of Nb, etc. constituting Josephson devices, by making use of three layered resist technique.

Abstract: The present invention is directed to a method for plasma desmear and etchback of epoxy and polyimide materials from a multilayered or double sided printed circuit board using a plasma gas composition in the range of 20-45% NF.sub.3, the remainder being O.sub.2.

Abstract: A method for anisotropically etching a thick tungsten layer atop a thin underlayer comprised of titanium nitride, by exposure to a gaseous plasma comprised of a binary mixture of chlorine gas and oxygen, wherein oxygen comprises approximately 25%-45% of the mixture by volume. This plasma provides a combination of high tungsten etch rate, highly uniform etching, anisotropic profiles, and high etch rate ratio to underlaying glass passivation layers.