Abstract: An apparatus for the in-situ cleaning of the interior surfaces of a processing chamber (14) and/or tooling or substrates disposed within said chamber where said chamber is composed substantially of dielectric material having at least one powered and one grounded electrode (30) formed from a thin film of conductive material deposited directly on the exterior surface of said chamber, a means for introducing gas (26) into the chamber, a means for establishing and maintaining a reduced pressure environment (22) within the chamber, and a supply of radio frequency power (32). A plasma is created in the chamber by the interaction of the RF field established in the chamber upon the application of RF power to the electrodes with the gas in the chamber, and the plasma creates gaseous species that etch unwanted deposits and/or contaminates from the interior surfaces of the chamber and/or the surfaces of tooling or substrates disposed in the chamber.

Abstract: A process is disclosed which etches a workpiece, with an etching mask of a predetermined pattern formed on the surface of the workpiece, on an apparatus which includes a container for holding first and second electrodes opposite to each other and a magnetic field generator arranged on a side opposite to that side of the second electrode where the second electrode faces the first electrode, which comprises placing the workpiece on the first electrode, supplying a feed gas into the container, evacuating air in the container to set pressure in the container at a level of 10.sup.-2 torrs, and applying high frequency power across the first and second electrodes to yield plasma whereby the workpiece is etched.

Abstract: To regulate and monitor material concentrations, e.g., sodium chlorite or hydrogen peroxide, measuring cells are employed in which these substances are reacted to completion with another substance, e.g., sulfur dioxide, in an exothermal reaction. The resulting temperature rise is then a measure for the concentration. A simple measuring cell includes a pipe section provided at both ends with mounting devices for mounting in the delivery line conveying the reaction medium. There is mounted in this pipe section a U-shaped pipe section which is open at both ends and has a smaller diameter, and whose two arms extend into the pipe section with a larger diameter. The center section of, and parallel to, is located outside of the larger pipe and is provided with a thermal insulation, a supply line for the reacting substance, and a temperature sensor.

Abstract: The apparatus is composed of a flow-through mixer which is followed by a repressing means composed of a cylinder and movable piston downstream in the direction of the conveying stream. In order to avoid cross-sectional constrictions in this apparatus due to sedimentation of reaction resin compounds and/or filler, a flow-through mixer integrated in the piston is provided, the discharge opening of this flow-through mixer discharging directly into the cylinder of the repressing means. The overall apparatus functions in a direct flow-through, i.e. the dwell time of the reactive resin compounds in the apparatus is limited to a minimum.

Abstract: A monolithic exhaust gas catalyst, or catalytic converter, is arranged in a metallic housing and is supported against the inner surfaces of the housing by a resilient fiber material positioned therebetween. The resilient fiber material is provided with a catalytically active coating so that the exhaust gases which flow outside the exhaust gas catalyst and through the fiber material, are also converted by the treated fiber material.

Abstract: An improved composition consisting essentially of an alkali solution and 3,5-dimethyl pyrazole, for removing a photosensitive resin film from a baseboard for an integrated circuit following formation of a tin-lead solder circuit on the baseboard. A method for removing the photosensitive resin without dissolving the tin-lead circuit by applying the improved composition.

Abstract: To regulate and monitor material concentrations, e.g., sodium chlorite or hydrogen peroxide, measuring cells are used in which these substances react to completion with another substance, e.g, sulfur dioxide, in an exothermal reaction. The resulting temperature rise is then a measure of the concentration. A measuring cell comprises a pipe section provided at both ends with mounting devices for installation in the delivery line transporting the reaction medium. Within this pipe section there is positioned axially a smaller diameter pipe section which is open at both ends, into one open end of which projects the supply line for the reacting substance and at the other end of which a temperature sensor is installed.

Abstract: The disclosed simple, economical and rapid sol-gel process for forming a silica-based glass body, termed the "vapogel" process, comprises introduction of a silicon halide-containing gas (e.g., SiCl.sub.4 +O.sub.2) into an aqueous medium. The thus formed sol can gel within minutes, resulting in a monolithic gel from which particles having a narrow size distribution can easily be formed. The thus formed particles can be used to produce a glass body such as an optical fiber. Various techniques for forming the glass body from the gel are disclosed. Among the many advantages of the vapogel method are its ability to produce very homogeneous mixed oxide glasses of composition not obtainable by prior art sol-gel processes, and the advantageous mechanical properties of the gel produced by the method. The latter makes possible, inter alia, formation of particles having a relatively narrow size distribution.

Abstract: In one embodiment this invention provides a novel sol-gel process for the production of microporous inorganic oxide glass monolith structures which have improved mechanical strength and optical transparency. An essential feature of the process is the use of trioxane during the gellation phase, to provide a glass monolith with micropores which have uniformity of size and shape.

Abstract: A method for producing contact holes having sloped walls in intermediate oxide layers through combination of isotropic and anisotropic etching steps which are carried out by means of dry etching in a fluorine-containing plasma. The first etching step is an isotropic etching using an etching gas mixture in which the free fluorine atoms for the isotropic etching step are partially replaced by free CF.sub.3 radicals and ions for the anisotropic etching step. The last etching step is carried out anisotropically. Simultaneously, the electrode spacing in the reactor is reduced during the etching process. Sidewall angles between 60.degree. and 90.degree. can be reproduced with the method of the present invention. The method is particularly useful for the manufacture of large scale integrated semiconductor circuits.

Abstract: A method for etching silicon wafers having a (100) or (110) crystallographic orientation. The method includes using an etching solution consisting essentially of potassium hydroxide (KOH) and water. This allows for an optimum combination of etch rate and etch quality.