Abstract: Disclosed is an inductively-coupled plasma reactor that is useful for anisotropic or isotropic etching of a substrate, or chemical vapor deposition of a material onto a substrate. The reactor has a plasma-generation chamber with a conically-shaped plasma-generating portion and coils that are arranged around the plasma-generating portion in a conical spiral. The chamber and coil may be configured to produce a highly uniform plasma potential across the entire surface of the substrate to promote uniform ion bombardment for ion enhanced processing. In addition, a conical chamber and coil configuration may be used to produce activated neutral species at varying diameters in a chamber volume for non-ion enhanced processing. Such a configuration promotes the uniform diffusion of the activated neutral species across the wafer surface.

Abstract: This invention relates to a plasma reactor apparatus having improved etch uniformity and throughput. Higher etch uniformity is achieved through the use of a new gas delivery mechanism and a thermally insulated wafer chuck. The vacuum insulated chuck also results in lower energy consumption and higher throughput.

Abstract: A method and apparatus to improve process control during plasma etching of semiconductor substrates. Improvements are directed towards controlling the rate of etching when using consumable electrodes. Consumable electrode materials are used to increase selectivity in certain plasma etching processes as in via. contact. or in SOG etch. A consumable electrode material has a significant effect on processing time due to changing gap dimension between electrodes. This invention teaches how to adjust for process variables by using feedback from two strategically placed pressure manometers.

Abstract: A plasma reactor for generating and maintaining plasma. The plasma reactor has a resonant cavity whose cross-section tapers in summit regions in which the wall of the resonant cavity is closed to such an extent that an excited field mode in the region of the cross-sectional tapered portions displays main peaks whose maximum field intensity is increased relative to the field intensity of adjacent secondary peaks. A reaction unit is provided in the region of a main peak with a substrate which is to be processed and which can be coated in the gas phase of the plasma. As a result of the field intensity distribution brought about by a resonant cavity of the given shape, with main peaks which are greatly increased with respect to secondary peaks, process parameters such as gas pressure and coupled electromagnetic power can be selected very largely independently of one another when the plasma is in a stable situation, without the plasma igniting undesirably in the region of the secondary peaks.

Abstract: Disclosed is an inductively coupled plasma chemical vapor deposition apparatus including: a vacuum reaction chamber having an interior, bounded in part by a dielectric shield, the dielectric shield being lined with an oxygen-less silicon layer formed on its interior surface; a gas introducing unit for introducing a reactant gas to the interior of the vacuum reaction chamber; an antenna where radio frequency power is applied, the antenna being arranged outside the vacuum reaction chamber and adjacent to the dielectric shield; a coupling unit for coupling a radio frequency power source to the antenna; a stage for heating a work piece to be processed within the interior of the vacuum reaction chamber; and an exhaust unit for exhausting remnant gases from the interior of the vacuum reaction chamber. The oxygen-less silicon layer can be either an amorphous silicon layer, silicon nitride layer or silicon carbide layer.

Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.

Abstract: A vacuum processing apparatus includes: a vacuum processing chamber for processing a target object; a processing gas supply source for supplying a processing gas by which a process is performed to the target object in the vacuum processing chamber; a processing gas supply pipe for supplying the processing gas from the processing gas supply source into the vacuum processing chamber; and a pressure reducing valve for keeping the gas supply pipe at a lower pressure than the atmospheric pressure when the processing gas is to be supplied to the vacuum processing chamber.

Abstract: A plasma reactor has plural dielectric gas injection tubes extending from a gas injection source and through a microwave guide and into the top of the reactor chamber. The semiconductor wafer rests near the bottom of the chamber on a wafer pedestal connected to a bias RF power source which is controlled independently of the microwave source coupled to the microwave guide. The microwaves from the waveguide ignite and maintain a plasma in each of the tubes. Gas flow through the tubes carries the plasmas in all the tubes into the chamber and into contact with the wafer surface.

Abstract: A thin film deposition apparatus which includes a mesh type radio frequency (RF) electrode plate adapted to form plasma, a baffle guide adapted to prevent the plasma from diffusing at a low pressure, and a control unit adapted to perform control of temperature for preventing a reacting raw material from generating a degraded reaction in a gas injector, thereby enabling formation of a multi-element thin film using a multi-element reacting raw material and formation of a uniform thin film having a high density to obtain micro patterns of highly integrated semiconductor devices.

Abstract: A method for reducing particles (235) during a semiconductor process. A semiconductor substrate (230) is placed into a processing chamber (210). A processing pressure (108) is applied within the chamber (212). A processing power (102) is applied to the chamber. A grid power (104,106) for removing particles (235) is applied to the chamber (212). The processing power (102) is removed. The grid power (106) is removed after the processing power (102).

Abstract: A plasma system is disclosed for processing a substrate and includes a chamber body defining a plasma cavity therein and having a centrally located gas inlet, and a top antenna configured in position relative to the plasma cavity to produce a center-peaked plasma density profile above the substrate during operation. The top antenna has a central passage which surrounds the centrally located gas inlet. A side antenna is preferably configured and positioned relative to the plasma chamber to produce a hollow-center plasma density profile above the substrate during operation. Together, the top and side antennas and the centrally located gas inlet provide a uniform plasma directly over the surface of the substrate to be processed.

Abstract: An apparatus and method are provided for an inductively coupled plasma within a reactor for processing semiconductor wafers or workpieces. A gas distribution system having an annular passage formed between the chamber walls and quartz dome uniformly inlet gases over the wafer. The system of the present invention provides an increased etch rate with high selectively and anistropy.

Abstract: A dry etching method utilizing electron cyclotron resonance excited by microwaves is divided into at least a first etching step for etching a region which extends to the vicinity of a boundary between the non-etching layer and the etching layer but does not reach the non-etching layer and a second etching step conducted after the first etching step.At least one among the four control factors of output power of the magnetron, electron cyclotron resonance point, etching pressure and magnetic field intensity distribution or a combination of five control factors including the foregoing four plus a high-frequency bias power applied to the rear surface of the object to be etched is changed as desired between the first etching step and the second etching step.

Abstract: A semiconductor device producing apparatus includes a first transporter which moves a substrate to a first unit to undergo at least a first process, and a second transporter, other than the first transporter, which moves the substrate to a second unit, to undergo at least a second process.

Abstract: A plasma source uses radio frequency electromagnetic radiation to ionize and dissociate gas molecules into reactive species within a plasma generation tube and emits the species to react with and remove contaminants from surfaces on a spacecraft. The source of the radiation is an antenna brazed to the outside of the plasma generation tube. Permanent magnets ring the plasma generation tube within a metallic housing to generate a magnetic field. Pole pieces are provided to improve the strength of the field and to improve its uniformity and axial orientation within the plasma generation tube. A plenum and a gas diffusing element distribute gas entering the plasma generation tube.

Abstract: A contact hole is formed in an SiO.sub.2 film on a silicon wafer by a plasma etching, using a photoresist as a mask. A process gas is a mixture of an etching gas of HFPO and a carrier gas of Ar at a volume ratio of from 1:17.5 to 1:20. The process gas is fed into a process chamber which houses the silicon wafer and is set at a pressure of from 10 mTorr to 100 mTorr. The process gas is turned into plasma by electric discharge, and the SiO.sub.2 film is subjected to etching with the plasma. During the etching, the target surface of the wafer is kept at a temperature of from 50.degree. C. to 100.degree. C.

Abstract: A method for producing stable atmospheric pressure glow discharge plasmas using RF excitation and the use of said plasmas for modifying the surface layer of materials. The plasma generated by this process and its surface modification capability depend on the type of gases used and their chemical reactivity. These plasmas can be used for a variety of applications, including etching of organic material from the surface layer of inorganic substrates, as an environmentally benign alternative to industrial cleaning operations which currently employ solvents and degreasers, as a method of stripping paint from surfaces, for the surface modification of composites prior to adhesive bonding operations, for use as a localized etcher of electronic boards and assemblies and in microelectronic fabrication, and for the sterilization of tools used in medical applications.

Abstract: In a simultaneous discharge device for discharging inside of two chambers 4, 14 simultaneously by a single high-frequency power supply P, electric power dividing means 20 connects high-frequency power supply P to two chambers 4, 14, wherein electric power dividing means 20 comprises a first conductor plate 21 which connects the respective electrodes of the two chambers 4,14, a second conductor plate 23 which connects to the end of Rf cables 22 in said high-frequency power supply P and a conductor bar 24 which connects electrically the first and second conductor plates at a plurality of positions so that an impedance between the power supply and each of the chambers becomes equal.

Abstract: Method and apparatus for treating a workpiece implantation surface by causing ions to impact the workpiece implantation surface. An implantation chamber defines a chamber interior into which one or more workpieces can be inserted and includes a conductive inner wall portion in proximity to the chamber interior. A conductive workpiece support extends into an interior region of the implantation chamber. A conductive electrode is disposed within said implantation chamber relative to said conductive workpiece support to allow workpieces to be placed on the workpiece support in a region between the support and the conductive electrode. Gas molecules are injected into the implantation chamber to cause the gas molecules to occupy a region of the implantation chamber in close proximity to the one or more workpieces. The gas molecules are ionized near an implant surface of the workpieces.

Abstract: A method of semiconductor fabrication that reduces an antenna effect that can occur during a plasma etching procedure. The semiconductor device has circuitry fabricated over the surface of a silicon substrate and includes a gate structure having a gate oxide layer beneath a conductor layer. The method includes etching a polysilicon layer formed over the surface of the circuitry. The method also includes forming trenches in the polysilicon layer at the roots of sidewalls of gate structures of the semiconductor device, at an early stage of plasma etching, before the polysilicon layer has been completely consumed. The plasma may include a gas mixture of chlorine and oxygen. The gas mixture may have a chlorine/oxygen flow ratio of about 100/5 sccm.