Patents Examined by Marianne L Padgett
  • Patent number: 10995190
    Abstract: A method of treating an elastomer packaging element (10), in particular a stopper for medical or pharmaceutical use, the packaging element (10) having a bottom portion (11) that is to penetrate into a neck (21) of a container (20) and a top portion (12) that is to co-operate in sealed manner with a top surface (22) of said neck (21) of the container (20). The top surface of the top portion (12) is treated by a plasma-assisted polymerization method at atmospheric pressure using a plasma flame created at atmospheric pressure and into which a monomer is injected, the monomer polymerizing on the top surface in order to form a coating (18).
    Type: Grant
    Filed: November 9, 2016
    Date of Patent: May 4, 2021
    Assignee: APTAR STELMI SAS
    Inventors: Laurent Caburet, Ghislain Fournier
  • Patent number: 10981193
    Abstract: Embodiments relate to surface treating a substrate, spraying precursor onto the substrate using supercritical carrier fluid, and post-treating the substrate sprayed with the precursor to form a layer with nanometer thickness of material on the substrate. A spraying assembly for spraying the precursor includes one or more spraying modules and one or more radical injectors at one or more sides of the spraying module. A differential spread mechanism is provided between the spraying module and the radical injectors to inject spread gas that isolates the sprayed precursor and radicals generated by the radical injectors. As relative movement between the substrate and the spraying assembly is made, portions of the substrate is exposed to first radicals, sprayed with precursors either one of the spraying modules or both spraying modules using supercritical carrier fluid, and then exposed to second radicals again.
    Type: Grant
    Filed: March 30, 2018
    Date of Patent: April 20, 2021
    Assignee: Nova Engineering Films, Inc.
    Inventor: Sang In Lee
  • Patent number: 10982312
    Abstract: A treatment method of a sapphire material, said method comprising bombardment of a surface of the sapphire material, said surface facing a medium different from the sapphire material, by a single- and/or multi-charged gas ion beam so as to produce an ion implanted layer in the sapphire material, wherein the ions are selected from ions of the elements from the list consisting of helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), boron (B), carbon (C), nitrogen (N), oxygen (O), fluorine (F), silicon (Si), phosphorus (P) and sulphur (S). Use of said method to obtain a capacitive touch panel having a high transmission in the visible range.
    Type: Grant
    Filed: March 23, 2015
    Date of Patent: April 20, 2021
    Assignee: IONICS FRANCE
    Inventors: Denis Busardo, Frederic Guernalec
  • Patent number: 10934408
    Abstract: The present invention relates to a surface modification method for a polyether-ether-ketone material. The method combines physical and chemical methods, and comprises the steps of performing plasma immersion ion implantation on the surface of the polyether-ether-ketone material with argon as an ion source, and then, soaking the polyether-ether-ketone material treated by plasma immersion ion implantation in a hydrogen peroxide aqueous solution, hydrofluoric acid aqueous solution, or ammonia water to make the surface of the modified polyether-ether-ketone material have nanoparticles, shallow nanoporous structures, and/or ravined nanostructures.
    Type: Grant
    Filed: March 18, 2015
    Date of Patent: March 2, 2021
    Assignee: SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES
    Inventors: Xuanyong Liu, Tao Lu, Heying Wang, Fanhao Meng
  • Patent number: 10888895
    Abstract: A film production method for producing a thin film on a surface of a workpiece, including the steps of: disposing the workpiece in a chamber; supplying a process gas into the chamber with the inside of the chamber being maintained at a predetermined pressure; applying a light having an energy between 3 eV and 10 eV to the surface of the workpiece to cause a photoelectron to be emitted from the surface of the workpiece; and applying an AC electric field to the surface of the workpiece, wherein the AC electric field has an electric field intensity causing a Townsend discharge to occur without generating a glow discharge plasma.
    Type: Grant
    Filed: February 13, 2018
    Date of Patent: January 12, 2021
    Assignees: SHOWA DENKO K.K., A SCHOOL CORPORATION KANSAI UNIVERSITY
    Inventors: Hiroshi Tani, Hiroshi Sakai, Eishin Yamakawa, Kazuki Shindo
  • Patent number: 10876210
    Abstract: An apparatus, method, and system for post-processing a printed graphene ink pattern or other deposition on a substrate. A pulsed UV laser is tunable between various energy densities to selectively modify the printed ink or deposition in electrical or physical properties. In one example, radical improvements in electrical conductivity are achieved. In another example, controlled transformation from essentially 2D printed or deposited graphene to surface topology of 3D nanostructures are achieved. The 3D structures are beneficial in such applications as electrochemical sensors of different types and characteristics. In another example, hydrophobicity of the printed or deposited graphene can be manipulated starting from a hydrophilic to super hydrophobic surface.
    Type: Grant
    Filed: May 5, 2017
    Date of Patent: December 29, 2020
    Assignee: Iowa State University Research Foundation, Inc.
    Inventors: Jonathan Claussen, Suprem Das
  • Patent number: 10847372
    Abstract: Methods for processing of a workpiece are disclosed. The actual rate at which different portions of an ion beam can process a workpiece, referred to as the processing rate profile, is determined by measuring the amount of material removed from, or added to, a workpiece by the ion beam as a function of ion beam position. An initial thickness profile of a workpiece to be processed is determined. Based on the initial thickness profile, a target thickness profile, and the processing rate profile of the ion beam, a first set of processing parameters are determined. The workpiece is then processed using this first set of processing parameters. In some embodiments, an updated thickness profile is determined after the first process and a second set of processing parameters are determined. A second process is performed using the second set of processing parameters. Optimizations to improve throughput are also disclosed.
    Type: Grant
    Filed: September 26, 2018
    Date of Patent: November 24, 2020
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Morgan D. Evans, Kevin Anglin, Ross Bandy
  • Patent number: 10837102
    Abstract: A method of forming graphene includes placing a substrate in a processing chamber and introducing a cleaning gas including hydrogen and nitrogen into the processing chamber. The method also includes introducing a carbon source into the processing chamber and initiating a microwave plasma in the processing chamber. The method further includes subjecting the substrate to a flow of the cleaning gas and the carbon source for a predetermined period of time to form the graphene.
    Type: Grant
    Filed: June 22, 2018
    Date of Patent: November 17, 2020
    Assignee: CALIFORNIA INSTITUTE OF TECHNOLOGY
    Inventors: David A. Boyd, Nai-Chang Yeh
  • Patent number: 10831096
    Abstract: Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.
    Type: Grant
    Filed: November 30, 2018
    Date of Patent: November 10, 2020
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Jeffrey Marks, George Andrew Antonelli, Richard A. Gottscho, Dennis M. Hausmann, Adrien LaVoie, Thomas Joseph Knisley, Sirish K. Reddy, Bhadri N. Varadarajan, Artur Kolics
  • Patent number: 10770257
    Abstract: Examples of a substrate processing method include subjecting a substrate placed on a susceptor to plasma processing, applying power to an RF electrode facing the susceptor for only a predetermined static electricity removal time to generate plasma, thereby reducing an amount of charge of the substrate, measuring a self-bias voltage of the RF electrode while susceptor pins are made to protrude from a top surface of the susceptor and lift up the substrate, and by a controller, shortening the static electricity removal time when the self-bias voltage has a positive value, and lengthening the static electricity removal time when the self-bias voltage has a negative value.
    Type: Grant
    Filed: July 20, 2018
    Date of Patent: September 8, 2020
    Assignee: ASM IP Holding B.V.
    Inventors: Yuko Kengoyama, Takashi Yoshida
  • Patent number: 10752986
    Abstract: The present invention is directed to a method of manufacturing a three-dimensional carbon structure. The method requires graphene layers and/or graphene oxide layers. The layers can be provided such that they correspond to the cross-section of a pre-defined shape. In this regard, the method of the present invention can be employed to manufacture a three-dimensional carbon structure having a custom shape.
    Type: Grant
    Filed: October 30, 2017
    Date of Patent: August 25, 2020
    Assignee: Savannah River Nuclear Solutions, LLC
    Inventors: Matthew D Folsom, John T Bobbitt, III, Aaron L Washington, II, Josef A Velten
  • Patent number: 10745808
    Abstract: Described herein are methods for forming a Group 13 metal or metalloid nitride film. In one aspect, there is provided a method of forming an aluminum nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one aluminum precursor which reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing a plasma comprising non-hydrogen containing nitrogen plasma into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W/cm2; and optionally purge the reactor with an inert gas; and wherein the steps are repeated until a desired thickness of the aluminum nitride film is obtained.
    Type: Grant
    Filed: July 14, 2016
    Date of Patent: August 18, 2020
    Assignee: Versum Materials US, LLC
    Inventors: Xinjian Lei, Moo-Sung Kim, Sergei Vladimirovich Ivanov
  • Patent number: 10738377
    Abstract: There is provided a method for manufacturing graphene. The method includes an adsorption step of causing six-membered ring structures of carbon atoms to be adsorbed to a surface of a substrate; and an irradiation step of irradiating the surface of the substrate with a beam of a molecule containing carbon atoms.
    Type: Grant
    Filed: March 2, 2018
    Date of Patent: August 11, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Takashi Matsumoto
  • Patent number: 10724133
    Abstract: An electron beam vapor deposition process for depositing coatings includes placing a source coating material in a crucible of a vapor deposition apparatus; energizing the source coating with an electron beam raster pattern that delivers a controlled power density to the material in the crucible forming a vapor cloud from the source coating material; and depositing the source coating material onto a surface of a work piece.
    Type: Grant
    Filed: September 14, 2016
    Date of Patent: July 28, 2020
    Assignee: Raytheon Technologies Corporation
    Inventors: James W. Neal, Michael J. Maloney, Kevin W. Schlichting, Eric Jorzik, David A. Litton
  • Patent number: 10712485
    Abstract: A manufacturing system for controlling an optical axis of a birefringent material includes an illumination system. The illumination system illuminates the birefringent material that is formed on a curved optical surface with polarized light. The polarized light forms a pattern on the photoalignment material deposited on the curved optical surface. In some configurations, the manufacturing system applies a liquid crystal layer on the formed pattern. The liquid crystal layer includes a liquid crystal director whose orientation is determined by the pattern formed.
    Type: Grant
    Filed: February 9, 2018
    Date of Patent: July 14, 2020
    Assignee: Facebook Technologies, LLC
    Inventors: Wai Sze Tiffany Lam, Lu Lu
  • Patent number: 10670335
    Abstract: A method for manufacturing an enameled wire includes providing a conductor with an enamel coating thereon, and exposing the conductor to a light with a wavelength absorbable by a solvent included in the enamel coating to evaporate the solvent. The light includes a peak wavelength of less than 4 ?m.
    Type: Grant
    Filed: April 25, 2015
    Date of Patent: June 2, 2020
    Assignee: HITACHI METALS, LTD.
    Inventors: Yasuhiro Funayama, Ken Omori, Shunichiro Sato
  • Patent number: 10654070
    Abstract: The present application relates to a method for preparing a barrier film. The present application can provide a method for preparing a barrier film having excellent barrier characteristics and optical performances. The barrier film produced by the method of the present application can be effectively used not only for packaging materials of as foods or medicines, and the like, but also for various applications, such as members for FPDs (flat panel displays) such as LCDs (Liquid Crystal Displays) or solar cells, substrates for electronic papers or OLEDs (Organic Light Emitting Diodes), or sealing films.
    Type: Grant
    Filed: March 31, 2017
    Date of Patent: May 19, 2020
    Assignee: LG CHEM, LTD.
    Inventors: Hee Wang Yang, Jang Yeon Hwang, Seong Hwan Lee
  • Patent number: 10629442
    Abstract: A method for material deposition includes providing a transparent donor substrate (56, 60) having opposing first and second surfaces and multiple donor films (62, 64) including different, respective materials on the second surface. The donor substrate is positioned in proximity to an acceptor substrate (41), with the second surface facing toward the acceptor substrate. Pulses of laser radiation are directed to pass through the first surface of the donor substrate and impinge on the donor films so as to induce ejection of molten droplets containing a bulk mixture of the different materials from the donor films onto the acceptor substrate.
    Type: Grant
    Filed: October 7, 2014
    Date of Patent: April 21, 2020
    Assignee: Orbotech Ltd.
    Inventors: Michael Zenou, Zvi Kotler
  • Patent number: 10604445
    Abstract: The present invention relates to a substrate comprising an ion-implanted layer, for example a cation, wherein the ion implanted layer has a substantially uniform distribution of the implanted ions at a significantly greater depth than previously possible, to a well-defined and sharp boundary within the substrate. The invention further comprises said sub-strate wherein the substrate is a silicon based substrate, such as glass. The invention also comprises the use of said material as a waveguide and the use of said material in measurement devices.
    Type: Grant
    Filed: February 8, 2013
    Date of Patent: March 31, 2020
    Assignee: UNIVERSITY OF LEEDS
    Inventors: Gin Jose, Toney Teddy Fernandez, Peter John Grant, Animesh Jha, Sikha Saha, David Paul Steenson
  • Patent number: 10603685
    Abstract: Disclosed herein are methods comprising illuminating a first location of an optothermal substrate with electromagnetic radiation, wherein the optothermal substrate converts at least a portion of the electromagnetic radiation into thermal energy. The optothermal substrate can be in thermal contact with a liquid sample comprising a plurality of capped particles and a plurality of surfactant micelles, the liquid sample having a first temperature. The methods can further comprise generating a confinement region at a location in the liquid sample proximate to the first location of the optothermal substrate, wherein at least a portion of the confinement region has a second temperature that is greater than the first temperature such that the confinement region is bound by a temperature gradient. The methods can further comprise trapping and depositing at least a portion of the plurality of capped particles.
    Type: Grant
    Filed: February 22, 2018
    Date of Patent: March 31, 2020
    Assignee: BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM
    Inventors: Yuebing Zheng, Linhan Lin, Xiaolei Peng