Abstract: A method of treating an elastomer packaging element (10), in particular a stopper for medical or pharmaceutical use, the packaging element (10) having a bottom portion (11) that is to penetrate into a neck (21) of a container (20) and a top portion (12) that is to co-operate in sealed manner with a top surface (22) of said neck (21) of the container (20). The top surface of the top portion (12) is treated by a plasma-assisted polymerization method at atmospheric pressure using a plasma flame created at atmospheric pressure and into which a monomer is injected, the monomer polymerizing on the top surface in order to form a coating (18).

Abstract: A treatment method of a sapphire material, said method comprising bombardment of a surface of the sapphire material, said surface facing a medium different from the sapphire material, by a single- and/or multi-charged gas ion beam so as to produce an ion implanted layer in the sapphire material, wherein the ions are selected from ions of the elements from the list consisting of helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), boron (B), carbon (C), nitrogen (N), oxygen (O), fluorine (F), silicon (Si), phosphorus (P) and sulphur (S). Use of said method to obtain a capacitive touch panel having a high transmission in the visible range.

Abstract: Embodiments relate to surface treating a substrate, spraying precursor onto the substrate using supercritical carrier fluid, and post-treating the substrate sprayed with the precursor to form a layer with nanometer thickness of material on the substrate. A spraying assembly for spraying the precursor includes one or more spraying modules and one or more radical injectors at one or more sides of the spraying module. A differential spread mechanism is provided between the spraying module and the radical injectors to inject spread gas that isolates the sprayed precursor and radicals generated by the radical injectors. As relative movement between the substrate and the spraying assembly is made, portions of the substrate is exposed to first radicals, sprayed with precursors either one of the spraying modules or both spraying modules using supercritical carrier fluid, and then exposed to second radicals again.

Abstract: The present invention relates to a surface modification method for a polyether-ether-ketone material. The method combines physical and chemical methods, and comprises the steps of performing plasma immersion ion implantation on the surface of the polyether-ether-ketone material with argon as an ion source, and then, soaking the polyether-ether-ketone material treated by plasma immersion ion implantation in a hydrogen peroxide aqueous solution, hydrofluoric acid aqueous solution, or ammonia water to make the surface of the modified polyether-ether-ketone material have nanoparticles, shallow nanoporous structures, and/or ravined nanostructures.

Abstract: A film production method for producing a thin film on a surface of a workpiece, including the steps of: disposing the workpiece in a chamber; supplying a process gas into the chamber with the inside of the chamber being maintained at a predetermined pressure; applying a light having an energy between 3 eV and 10 eV to the surface of the workpiece to cause a photoelectron to be emitted from the surface of the workpiece; and applying an AC electric field to the surface of the workpiece, wherein the AC electric field has an electric field intensity causing a Townsend discharge to occur without generating a glow discharge plasma.

Abstract: An apparatus, method, and system for post-processing a printed graphene ink pattern or other deposition on a substrate. A pulsed UV laser is tunable between various energy densities to selectively modify the printed ink or deposition in electrical or physical properties. In one example, radical improvements in electrical conductivity are achieved. In another example, controlled transformation from essentially 2D printed or deposited graphene to surface topology of 3D nanostructures are achieved. The 3D structures are beneficial in such applications as electrochemical sensors of different types and characteristics. In another example, hydrophobicity of the printed or deposited graphene can be manipulated starting from a hydrophilic to super hydrophobic surface.

Abstract: Methods for processing of a workpiece are disclosed. The actual rate at which different portions of an ion beam can process a workpiece, referred to as the processing rate profile, is determined by measuring the amount of material removed from, or added to, a workpiece by the ion beam as a function of ion beam position. An initial thickness profile of a workpiece to be processed is determined. Based on the initial thickness profile, a target thickness profile, and the processing rate profile of the ion beam, a first set of processing parameters are determined. The workpiece is then processed using this first set of processing parameters. In some embodiments, an updated thickness profile is determined after the first process and a second set of processing parameters are determined. A second process is performed using the second set of processing parameters. Optimizations to improve throughput are also disclosed.

Abstract: A method of forming graphene includes placing a substrate in a processing chamber and introducing a cleaning gas including hydrogen and nitrogen into the processing chamber. The method also includes introducing a carbon source into the processing chamber and initiating a microwave plasma in the processing chamber. The method further includes subjecting the substrate to a flow of the cleaning gas and the carbon source for a predetermined period of time to form the graphene.

Abstract: Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

Abstract: Examples of a substrate processing method include subjecting a substrate placed on a susceptor to plasma processing, applying power to an RF electrode facing the susceptor for only a predetermined static electricity removal time to generate plasma, thereby reducing an amount of charge of the substrate, measuring a self-bias voltage of the RF electrode while susceptor pins are made to protrude from a top surface of the susceptor and lift up the substrate, and by a controller, shortening the static electricity removal time when the self-bias voltage has a positive value, and lengthening the static electricity removal time when the self-bias voltage has a negative value.

Abstract: The present invention is directed to a method of manufacturing a three-dimensional carbon structure. The method requires graphene layers and/or graphene oxide layers. The layers can be provided such that they correspond to the cross-section of a pre-defined shape. In this regard, the method of the present invention can be employed to manufacture a three-dimensional carbon structure having a custom shape.

Abstract: Described herein are methods for forming a Group 13 metal or metalloid nitride film. In one aspect, there is provided a method of forming an aluminum nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one aluminum precursor which reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing a plasma comprising non-hydrogen containing nitrogen plasma into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W/cm2; and optionally purge the reactor with an inert gas; and wherein the steps are repeated until a desired thickness of the aluminum nitride film is obtained.

Abstract: There is provided a method for manufacturing graphene. The method includes an adsorption step of causing six-membered ring structures of carbon atoms to be adsorbed to a surface of a substrate; and an irradiation step of irradiating the surface of the substrate with a beam of a molecule containing carbon atoms.

Abstract: An electron beam vapor deposition process for depositing coatings includes placing a source coating material in a crucible of a vapor deposition apparatus; energizing the source coating with an electron beam raster pattern that delivers a controlled power density to the material in the crucible forming a vapor cloud from the source coating material; and depositing the source coating material onto a surface of a work piece.

Abstract: A manufacturing system for controlling an optical axis of a birefringent material includes an illumination system. The illumination system illuminates the birefringent material that is formed on a curved optical surface with polarized light. The polarized light forms a pattern on the photoalignment material deposited on the curved optical surface. In some configurations, the manufacturing system applies a liquid crystal layer on the formed pattern. The liquid crystal layer includes a liquid crystal director whose orientation is determined by the pattern formed.

Abstract: A method for manufacturing an enameled wire includes providing a conductor with an enamel coating thereon, and exposing the conductor to a light with a wavelength absorbable by a solvent included in the enamel coating to evaporate the solvent. The light includes a peak wavelength of less than 4 ?m.

Abstract: The present application relates to a method for preparing a barrier film. The present application can provide a method for preparing a barrier film having excellent barrier characteristics and optical performances. The barrier film produced by the method of the present application can be effectively used not only for packaging materials of as foods or medicines, and the like, but also for various applications, such as members for FPDs (flat panel displays) such as LCDs (Liquid Crystal Displays) or solar cells, substrates for electronic papers or OLEDs (Organic Light Emitting Diodes), or sealing films.

Abstract: A method for material deposition includes providing a transparent donor substrate (56, 60) having opposing first and second surfaces and multiple donor films (62, 64) including different, respective materials on the second surface. The donor substrate is positioned in proximity to an acceptor substrate (41), with the second surface facing toward the acceptor substrate. Pulses of laser radiation are directed to pass through the first surface of the donor substrate and impinge on the donor films so as to induce ejection of molten droplets containing a bulk mixture of the different materials from the donor films onto the acceptor substrate.

Abstract: Disclosed herein are methods comprising illuminating a first location of an optothermal substrate with electromagnetic radiation, wherein the optothermal substrate converts at least a portion of the electromagnetic radiation into thermal energy. The optothermal substrate can be in thermal contact with a liquid sample comprising a plurality of capped particles and a plurality of surfactant micelles, the liquid sample having a first temperature. The methods can further comprise generating a confinement region at a location in the liquid sample proximate to the first location of the optothermal substrate, wherein at least a portion of the confinement region has a second temperature that is greater than the first temperature such that the confinement region is bound by a temperature gradient. The methods can further comprise trapping and depositing at least a portion of the plurality of capped particles.

Abstract: The present invention relates to a substrate comprising an ion-implanted layer, for example a cation, wherein the ion implanted layer has a substantially uniform distribution of the implanted ions at a significantly greater depth than previously possible, to a well-defined and sharp boundary within the substrate. The invention further comprises said sub-strate wherein the substrate is a silicon based substrate, such as glass. The invention also comprises the use of said material as a waveguide and the use of said material in measurement devices.