Abstract: Process for treatment by an ion beam of a glass material where: the acceleration voltage of the ions is between 5 kV and 1000 kV; the temperature of the glass material is less than or equal to the glass transition temperature; the dose of nitrogen (N) or oxygen (O) ions per unit of surface area is chosen within a range of between 1012 ions/cm2 and 1018 ions/cm2 so as to reduce the contact angle of a drop of water below 20°; a prior pretreatment is carried out with argon (Ar), krypton (Kr) or xenon (Xe) ions in order to strengthen the durability of the superhydrophilic treatment. Superhydrophilic glass materials of long duration are thus advantageously obtained.

Abstract: A method of manufacturing an article comprises providing an article. An ion assisted deposition (IAD) process is performed to deposit a second protective layer over a first protective layer. The second protective layer is a plasma resistant rare earth oxide having a thickness of less than 50 microns and a porosity of less than 1%. The second protective layer seals a plurality of cracks and pores of the first protective layer.

Abstract: The invention relates to a method for manufacturing a hoisting rope, comprising the steps of providing a plurality of elongated composite members, which composite members are made of composite material comprising reinforcing fibers in polymer matrix; and arranging the composite members to form an elongated row of parallel composite members, which row has a longitudingal direction, a thickness direction and a width direction, and in which row the composite members are positioned side by side such that they are parallel to each other, and spaced apart from each other in width direction of the row; and directing plasma treatment on the outer surface of the composite members; and embedding the composite members in fluid polymer material; and solidifying the polymer material wherein the composite members are embedded. The invention relates also to a hoisting rope obtained with the method and an elevator comprising the hoisting rope.

Abstract: The system of the present invention includes a conductive element, an electronic component, and a partial power source in the form of dissimilar materials. Upon contact with a conducting fluid, a voltage potential is created and the power source is completed, which activates the system. The electronic component controls the conductance between the dissimilar materials to produce a unique current signature. The system can also measure the conditions of the environment surrounding the system.

Abstract: Certain embodiments of this invention relates to a writable window (e.g., IG window unit), where images (e.g., advertisements, logos, designs, pictures and/or words) can be selectively written into the window and are designed to be viewed by humans and/or animals. A substrate (e.g., glass substrate) supports a solar coating such as a low emissivity (low-E) coating which may include at least one infrared (IR) reflecting layer of or including silver that is located on and directly contacting a contact/seed layer of or including a material such as zinc oxide and/or zinc stannate. A radiation source (e.g., laser(s) and/or lamp(s)) may be used to selectively expose certain areas of the coating to radiation (e.g., UV radiation). The exposed area(s) of the coating, after being exposed and heated, have different optical characteristic(s) (e.g.

Abstract: A method for forming a protective film is provided. In the method, a source gas containing an organic metal gas or an organic semi-metal gas is supplied to a substrate having a plurality of recessed shapes formed in a surface so as to cause the source gas to adsorb on the surface of the substrate including the plurality of recessed shapes. Then, an oxidation gas is supplied to the surface of the substrate including the plurality of recessed shapes to oxidize the source gas adsorbed on the surface of the substrate, thereby depositing an oxidation film of the organic metal or the organic semi-metal on a flat area between the plurality of recessed shapes. Supplying the source gas to the substrate and supplying the oxidation gas to the substrate are repeated at a rate in a range of 90 to 300 cycles per minute.

Abstract: Embodiments of the invention include a method of initiating an optical fiber. In some embodiments, a distal portion of the optical fiber is coated with an energy absorbing material. In some embodiments, the material includes a metal flakes or powder dispersed in a solution of organic solvents. After the material dries, laser energy is fired through the optical fiber. The laser energy can be absorbed in the material and ignites the organic solvents. This combustion melts the material of the optical fiber, and impregnates the optical fiber with the metal flakes or powder of the material. The resulting optical fiber is thus permanently modified so that the energy applied through the fiber is partially absorbed and converted to heat.

Abstract: An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon or neon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. This is especially beneficial in non-mass analyzed implanters, where all ions are implanted into the workpiece. In one embodiment, a first source gas, comprising a processing species and a halogen is introduced into a ion source chamber, a second source gas comprising a hydride, and a third source gas comprising a noble gas are also introduced. The combination of these three source gases produces an ion beam having a higher percentage of pure processing species ions than would occur if the third source gas were not used.

Abstract: A method of making a solution including poly(ethylene terephthalate). The method includes dissolving poly(ethylene terephthalate) in a solvent mixture to form a solution, the solvent mixture including two solvent components. A Hansen Solubility Parameter Distance between the solvent mixture and HSP coordinates having a dispersion HSP of 18.02 MPa0.5, a polar HSP of 5.56 MPa0.5, and a hydrogen bonding HSP of 14.27 MPa0.5 is less than about 2 MPa0.5.

Abstract: A polycrystalline chemical vapor deposited (CVD) diamond wafer comprising: a largest linear dimension equal to or greater than 125 mm; a thickness equal to or greater than 200 ?m; and one or both of the following characteristics measured at room temperature (nominally 298 K) over at least a central area of the polycrystalline CVD diamond wafer, said central area being circular, centered on a central point of the polycrystalline CVD diamond wafer, and having a diameter of at least 70% of the largest linear dimension of the polycrystalline CVD diamond wafer: an absorption coefficient ?0.2 cm?1 at 10.6 ?m; and a dielectric loss coefficient at 145 GHz, of tan ??2×10?4.

Abstract: A coating and devices using the coating are provided. The coating is applied in liquid form and dried or otherwise cured to form a durable adherent coating resistant to high temperatures and having optional hydrophobic properties. The coating formulation contains an aqueous formulation of silica, one or more fillers, and sufficient base, (e.g., potassium hydroxide), to have a pH exceeding about 10.5 during at least part of the formulation process. The formulation may contain a compound(s) that affects surface free energy, energy to make the cured coating hydrophobic. Such compounds include silanes containing halogens (e.g., fluorine or chlorine) and in particular silanes containing one or more hydrolyzable groups attached to at least one silicon atom and a group containing one or more halogens (e.g., chlorine or fluorine). A medical instrument (e.g., electrosurgical instrument) may be at least partially covered by a coating using the formulation.

Abstract: Provided is a method of forming a thin film having a target thickness T on a substrate by an atomic layer deposition (ALD) method. The method includes n processing conditions each having a film growth rate that is different from the others, and determining a1 to an that are cycles of a first processing condition to an n-th processing condition so that a value of |T?(a1×G1+a2×G2+ . . . +an×Gn)| is less than a minimum value among G1, G2, . . . , and Gn, where n is 2 or greater integer, G1, . . . , and Gn respectively denote a first film growth rate that is a film growth rate of the first processing condition, . . . and an n-th film growth rate that is a film growth rate of the n-th processing condition, and the film growth rate denotes a thickness of a film formed per a unit cycle in each of the processing conditions. The film forming method may precisely and uniformly control a thickness of the thin film when an ALD is performed.

Abstract: An implantable medical device that is fabricated from materials that present a blood or body fluid or tissue contact surface that has controlled heterogeneities in material constitution. An endoluminal stent-graft and web-stent that is made of a monolithic material formed into differentiated regions defining structural members and web regions extending across interstitial spaces between the structural members. The endoluminal stent-graft is characterized by having controlled heterogeneities at the blood flow surface of the stent.

Abstract: The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

Abstract: A method for reducing post-annealing shrinkage of silicon dioxide film includes arranging a substrate on a substrate support in a processing chamber; setting a pressure in the processing chamber to a predetermined pressure range; setting a temperature of the substrate support to a predetermined temperature range; supplying a process gas mixture to a gas distribution device. The process gas mixture includes TEOS gas, a gas including an oxygen species, and argon gas. The argon gas comprises greater than 20% of the process gas mixture by volume. The method further includes striking plasma and depositing the film on the substrate.

Abstract: An atmospheric pressure pulsed arc plasma source and method of using including a housing having a housing opening therein; an insulator tube having an insulator tube opening therein, retained within the housing opening; and a conductive tube, retained within the insulator tube opening. A nozzle is retained by the housing. A feed path is defined in the conductive tube and the nozzle and a gas feed port is operatively coupled to the feed path. Feedstock is provided in the feed path and electrically coupled to the conductive tube. A pulsed DC power source provides a pulsed voltage to the conductive tube. The plasma source emits a discharge stream having a temperature that is less than 50° C. from the nozzle and a coating is formed on a substrate.

Abstract: Embodiments of the present invention relate to apparatus for enhancing deposition rate and improving a plasma profile during plasma processing of a substrate. According to embodiments, the apparatus includes a tuning electrode disposed in a substrate support pedestal and electrically coupled to a variable capacitor. The capacitance is controlled to control the RF and resulting plasma coupling to the tuning electrode. The plasma profile and the resulting deposition rate and deposited film thickness across the substrate are correspondingly controlled by adjusting the capacitance and impedance at the tuning electrode.

Abstract: A new BiVO4-laminate manufacturing method and BiVO4 laminate are provided. A bismuth-vanadate laminate is manufactured as follows: a substrate that can be heated by microwaves is disposed inside a precursor solution containing a vanadium salt and a bismuth salt, microwave-activated chemical bath deposition (MW-CBD) is used to form a bismuth-vanadate layer on the substrate, and a firing process is performed as necessary. A bismuth-vanadate laminate manufactured in this way is suitable for use as a photocatalyst or photoelectrode.

Abstract: A film deposition method for forming a film of a reaction product includes adsorbing a first process gas to a surface of a substrate; reacting the first process gas and a second process gas to generate a reaction product; and modifying a surface of the reaction product by plasma activating a plasma processing gas and supplying the plasma processing gas to the substrate, wherein in the modifying the surface of the reaction product, a first plasma processing gas is supplied to form a flow of the first plasma processing gas in a direction parallel to the surface of the substrate over an entire surface of the substrate, and also a second plasma processing gas containing hydrogen containing gas is supplied at an upstream side of the flow of the first plasma processing gas in the direction parallel to the surface of the substrate.

Abstract: An attachment coating method including, mixing a conductive attachment into an insulating liquid, immersing an attachment target in the insulating liquid in which the attachment is mixed, and applying ultrasonic vibration to the insulating liquid in which the attachment target is immersed and causing friction between the attachment target and the attachment to charge the attachment target and the attachment.