Abstract: Forming a conductive film comprising depositing a non-conductive film on a surface of a substrate, wherein the film contains a plurality of copper nanoparticles and exposing at least a portion of the film to light to make the exposed portion conductive. Exposing of the film to light photosinters or fuses the copper nanoparticles.

Abstract: A lower electrode and an adhesive layer made of an insulator are formed on a back surface on the ion implantation layer side of a piezoelectric single crystal substrate. A supporting substrate in which sacrificial layers made of a conductive material have been formed is bonded to the surface of the adhesive layer. By heating the composite body including the piezoelectric single crystal substrate, the lower electrode, the adhesive layer, and the supporting substrate, a layer of the piezoelectric single crystal substrate is detached to form a piezoelectric thin film. A liquid polarizing upper electrode is formed on a detaching interface of the piezoelectric thin film. A pulsed electric field is applied using the polarizing upper electrode and the sacrificial layers as counter electrodes. Consequently, the piezoelectric thin film is polarized.

Abstract: A method for coating a turbine engine component, said method includes the steps of: placing the component into a chamber; injecting a non-reactive carrier gas containing a coating material into the chamber; and forming a coating on a desired portion of the component by locally heating the desired portion of the component by redirecting a directed energy beam onto the desired portion of the component.

Abstract: PbO-based photoconductive X-ray imaging devices are disclosed in which the PbO photoconductive layer exhibits an amorphous crystal structure. According to selected embodiments, the amorphous PbO photoconductive layer may be formed by providing a substrate inside an evacuated evaporation chamber and evaporating lead oxide to deposit a photoconductive lead oxide layer onto the substrate, while subjecting the photoconductive layer to ion bombardment with oxygen ions having an ion energy between 25 and 100 eV. X-ray direct detection imaging devices formed from such amorphous PbO photoconductive layers are shown to exhibit image lag that is suitable for fluoroscopic imaging.

Abstract: A method for curing and surface functionalization of molded parts, including processing materials that contain at least one unsaturated radically or cationically curable reactive resin system and further substances to form a molded part and cross-linking the materials up to dimensional stability during or after the processing. The method additionally includes subjecting the molded part to energetic radiation or energetic particles at least one of during the cross-linking and subsequent to the cross-linking to essentially complete curing at least of a surface region of the molded part to produce an essentially completely coatable molded part surface.

Abstract: An oriented film includes first to fourth regions having first to fourth orientation angles. First polarized light having a first intensity is radiated onto the first and second regions of a photosensitive film. Second polarized light having a second intensity is radiated onto the second and third regions of the photosensitive film. Third polarized light having a third intensity is radiated onto the first to fourth regions of the photosensitive film. The polarization angles of the first to third polarized light are different from each other. The second polarization angle is larger than the first polarization angle. The third polarization angle is larger than the second polarization angle. The polarization angle of the second or third polarized light radiated onto the third region is less than the third alignment angle. The third intensity is lower than the first intensity and the second intensity.

Abstract: Methods are described for a cyclical deposition and curing process. More particularly, the implementations described herein provide a cyclic sequential deposition and curing process for filling features formed on a substrate. Features are filled to ensure electrical isolation of features in integrated circuits formed on a substrate. The processes described herein use flowable film deposition processes that have been effective in reducing voids or seams produced in features formed on a substrate. However, conventional gap-filling methods using flowable films typically contain dielectric materials that have undesirable physical and electrical properties. In particular, film density is not uniform, film dielectric constant varies across the film thickness, film stability is not ideal, film refractive index is inconsistent, and resistance to dilute hydrofluoric acid (DHF) is not ideal in conventional flowable films.

Abstract: A method of manufacturing an article comprises providing an article. An ion assisted deposition (IAD) process is performed to deposit a second protective layer over a first protective layer. The second protective layer is a plasma resistant rare earth oxide having a thickness of less than 50 microns and a porosity of less than 1%. The second protective layer seals a plurality of cracks and pores of the first protective layer.

Abstract: A deposition apparatus includes a vacuum chamber, a substrate disposed in the vacuum chamber, a deposition source disposed in the vacuum chamber and facing the substrate to provide a deposition material onto the substrate, a laser oscillator generating a first laser beam, and an optical unit connected to a first side of the vacuum chamber and splitting the first laser beam to generate a plurality of mask laser beams. The mask laser beams are irradiated into the vacuum chamber to be disposed between the substrate and the deposition source. The deposition material making contact with the mask laser beams is oxidized, and the deposition material passing through the mask laser beams is deposited on the substrate.

Abstract: A method and apparatus for treating graphene raw material by plasma, and an application thereof are provided. After treated by the plasma, the graphene raw material will have a special structure and characteristic.

Abstract: Systems and methods of engineering the optical properties of an optical Integrated Computational Element device using ion implantation during fabrication are provided. A system as disclosed herein includes a chamber, a material source contained within the chamber, an ion source configured to provide a high-energy ion beam, a substrate holder to support a multilayer stack of materials that form the Integrated Computational Element device, a measurement system, and a computational unit. The material source provides a material layer to the multilayer stack, and at least a portion of the ion beam is deposited in the material layer according to an optical value provided by the measurement system.

Abstract: In a conductive film forming method using photo sintering, a conductive film having low electric resistance is easily formed. Disclosed is a conductive film forming method in which a conductive film is formed using a photo sintering, which includes the steps of: forming a liquid film made of a copper particulate dispersion on a substrate, drying the liquid film to form a copper particulate layer, subjecting the copper particulate layer to photo sintering to form a conductive film, attaching a sintering promoter to the conductive film, and further subjecting the conductive film having the sintering promoter attached to photo sintering. The sintering promoter is a compound which removes copper oxide from metallic copper. Thereby, the sintering promoter removes a surface oxide film of copper particulates in the conductive film.

Abstract: An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon or neon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. This is especially beneficial in non-mass analyzed implanters, where all ions are implanted into the workpiece. In one embodiment, a first source gas, comprising a processing species and a halogen is introduced into a ion source chamber, a second source gas comprising a hydride, and a third source gas comprising a noble gas are also introduced. The combination of these three source gases produces an ion beam having a higher percentage of pure processing species ions than would occur if the third source gas were not used.

Abstract: A method of treating particles by disaggregating, deagglomerating, exfoliating, cleaning, functionalizing, doping, decorating and/or repairing said particles, in which the particles are subjected to plasma treatment in a treatment chamber containing a plurality of electrodes which project therein and wherein plasma is generated by said electrodes which are moved during the plasma treatment to agitate the particles.

Abstract: A method of manufacturing an article comprises providing an article such as a chamber component for an etch reactor. A plasma spray deposition process is performed for deposit a first protective layer over at least one surface of the chamber component. The first protective layer is a plasma resistant ceramic having a thickness of greater than approximately 50 microns and a plurality of cracks and pores. An ion assisted deposition (IAD) process is then performed to deposit a second protective layer over the first protective layer. The second protective layer is a plasma resistant rare earth oxide having a thickness of less than 50 microns and a porosity of less than 1%. The second protective layer seals the plurality of cracks and pores of the first protective layer.

Abstract: The present invention relates to a method for fabricating blackened conductive patterns, which includes (i) forming a resist layer on a non-conductive substrate; (ii) forming fine pattern grooves in the resist layer using a laser beam; (iii) forming a mixture layer containing a conductive material and a blackening material in the fine pattern grooves; and (iv) removing the resist layer remained on the non-conductive substrate.

Abstract: Described herein are systems and methods for performing a surface mechanical attrition treatment (SMAT) to the surface of a variety of materials including thin films, nanomaterials, and other delicate and brittle materials. In an aspect, a surface of a material is modified to a modified surface and from an original state to a modified state, wherein the modified state comprises a physical modification, a chemical modification, or a biological modification. In another aspect, a surface mechanical attrition treatment (SMAT) is applied to the modified surface of the material for a defined duration of time, wherein a condition associated with the SMAT is adjusted based on a structural composition of the material. In yet another aspect, a defined strain is imposed on the structural composition of the material based on the SMAT.

Abstract: Embodiments of the invention include a method of initiating an optical fiber of a tip assembly to form a finished tip assembly. In some embodiments, at least a portion of a distal portion of the optical fiber is coated with an energy absorbing initiating material. In some embodiments, the initiating material is an enamel material including a mixture of brass (copper and zinc) flakes or aluminum flakes in a solution of organic solvents. After the initiating material dries, a diode laser is fired through the optical fiber. The laser energy is at least partially absorbed in the initiating material and ignites the organic solvents. This combustion melts the material of the optical fiber, and impregnates the optical fiber with the metal flakes of the initiating material. The resulting initiated optical fiber is thus permanently modified so that the energy applied through the fiber is partially absorbed and converted to heat.

Abstract: Methods of decreasing the dose per pulse implanted into a workpiece disposed in a process chamber are disclosed. According to one embodiment, the plasma is generated by a RF power supply. This RF power supply may have two different modes, a first, referred to as continuous wave mode, where the RF power supply is continuously outputting a voltage. This mode allows creation of the plasma within the process chamber. During the second mode, referred to as pulsed plasma mode, the RF power supply outputs two different power levels. The platen bias voltage may be a more negative value when the lower RF power level is being applied. This pulsed (or multi-setpoint) plasma also assists in reducing dopant deposition on the wafer during the time when CW plasma is on but the bias voltage pulse is in the off-state. In a further embodiment, a delay is introduced between the transition to the pulsed plasma mode and the initiation of the implanting process.

Abstract: Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.