Abstract: The present disclosure provides an apparatus for a semiconductor lithography process in accordance with some embodiments. The apparatus includes a pellicle membrane with a thermal conductive surface; a porous pellicle frame; and a thermal conductive adhesive layer that secures the pellicle membrane to the porous pellicle frame. The porous pellicle frame includes a plurality of pore channels continuously extending from an exterior surface of the porous pellicle frame to an interior surface of the porous pellicle frame.

Abstract: The composition contains an alkali-soluble resin and a crosslinking agent that is represented by the following General Formula (I). In the formula, each of R1 and R6 independently represents a hydrogen atom or a hydrocarbon group having 5 or less carbon atoms; each of R2 and R5 independently represents an alkyl group, a cycloalkyl group, an aryl group, or an acyl group; and each of R3 and R4 independently represents a hydrogen atom or an organic group having 2 or more carbon atoms, and R3 and R4 may be bonded to each other to form a ring.

Abstract: A liquid solder resist composition contains a carboxyl group-containing resin, a photopolymerizable compound containing at least one compound selected from a group consisting of a photopolymerizable monomer and a photopolymerizable prepolymer, a photopolymerization initiator, and a titanium dioxide. The photopolymerization initiator contains a bisacylphosphine oxide-based photopolymerization initiator, a first ?-hydroxyalkyl phenone-based photopolymerization initiator that is a liquid at 25° C., and a second ?-hydroxyalkyl phenone-based photopolymerization initiator that is a solid at 25° C.

Abstract: A process for producing a photoresist pattern comprising steps (1) to (5); (1) applying a photoresist composition onto a substrate, said photoresist composition comprising an acid generator and a resin which comprises a structural unit having an acid-liable group; (2) drying the applied composition to form a composition layer; (3) exposing the composition layer; (4) heating the exposed composition layer; and (5) developing the heated composition layer with a developer which comprises butyl acetate, wherein a distance of Hansen solubility parameters between the resin and butyl acetate is from 3.3 to 4.3, the distance is calculated from formula (1): R=(4×(?dR?15.8)2+(?pR?3.7)2+(?hR?6.3)2)1/2??(1) in which ?dR represents a dispersion parameter of the resin, ?pR represents a polarity parameter of the resin, ?hR represents a hydrogen bonding parameter of the resin, and R represents the distance, and a film retention ratio of the photoresist pattern relative to the composition layer is adjusted to 65% or more.

Abstract: A resist composition comprising a base polymer and a metal salt of an iodinated aromatic group-containing carboxylic acid, the metal being selected from among sodium, magnesium, potassium, calcium, rubidium, strontium, cesium, barium, cobalt, nickel, copper, zinc, cadmium, tin, antimony, zirconium, hafnium, cerium, aluminum, and indium, exhibits a sensitizing effect and an acid diffusion suppressing effect and forms a pattern having improved resolution, LWR and CDU.

Abstract: A method includes forming a photoresist layer over a substrate, wherein the photoresist layer includes a polymer, a sensitizer, and a photo-acid generator (PAG), wherein the sensitizer includes a resonance ring that includes nitrogen and at least one double bond. The method further includes performing an exposing process to the photoresist layer. The method further includes developing the photoresist layer, thereby forming a patterned photoresist layer.

Abstract: A compound represented by the following formula (1): wherein each X independently represents an oxygen atom or a sulfur atom, or non-crosslinking, R1 represents a single bond or a 2n-valent group having 1 to 30 carbon atoms, the group may have an alicyclic hydrocarbon group, a double bond, a hetero atom, or an aryl group having 6 to 30 carbon atoms, each R2 independently represents a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, an aryloxy group having 6 to 30 carbon atoms, or a hydroxyl group, in which at least one R2 represents an alkoxy group having 1 to 30 carbon atoms or an aryloxy group having 6 to 30 carbon atoms, each m is independently an integer of 1 to 6, each p is independently 0 or 1, and n is an integer of 1 to 4.

Abstract: A method for forming a photomask includes the following steps. A substrate is provided, which has a pattern region and a peripheral region surrounding the pattern region. A first etching operation is performed on a first surface of the substrate to remove first portions of the substrate in the pattern region, so as to form recesses in the pattern region of the substrate. A blasting operation is performed on the first surface of the substrate. A BARC layer is formed filling the recesses and over the first surface of the substrate. A second etching operation is performed on a second surface of the substrate opposite to the first surface until portions of the BARC layer in the recesses are exposed. The BARC layer is removed after the second etching operation, so as to form openings in the substrate in the pattern region.

Abstract: Provided are a pellicle for extreme ultraviolet light lithography, a production method thereof, and an exposure method. A pellicle according to the present invention includes a first frame having a pellicle film located thereon; a second frame including a thick portion including a first surface carrying a surface of the first frame opposite to a surface on which the pellicle film is located, and also including a second surface connected with the first surface and carrying a side surface of the first frame, the second frame enclosing the pellicle film and the first frame; a through-hole provided in the thick portion of the second frame; and a filter located on an outer side surface of the second frame and covering the through-hole, the outer side surface crossing the surface of the first frame on which the pellicle film is located.

Abstract: A main object of the present invention is to provide a method of producing a volume hologram laminate which can regenerate a hologram image in an arbitrary wavelength by a simple process. To attain the object, the present invention provides a method of producing a volume hologram laminate using a volume hologram forming substrate which comprises: a substrate, a volume hologram layer formed on the substrate and containing a photopolymerizable material, a resin layer, formed on the substrate so as to contact to the volume hologram layer, containing a resin and a polymerizable compound, characterized in that the producing method comprises processes of: a hologram recording process to record a volume hologram to the volume hologram layer, a substance transit process of transiting the polymerizable compound to the volume hologram layer, and an after-treatment process of polymerizing the polymerizable compound.

Abstract: Provided are a naphtol-type calixarene compound having high solvent solubility, a method for producing the naphthol-type calixarene compound, a photosensitive composition that contains the naphthol-type calixarene compound and provides a coating having high thermal decomposition resistance, alkali developability, photosensitivity, and resolution, and a resist material and a coating each being made of the photosensitive composition. Specifically, provided is a naphthol-type calixarene compound including a molecular structure represented by general formula (1). [In the formula (1), R1 represents a hydrogen atom, an alkyl group, an alkoxy group, an optionally substituted aryl group, an optionally substituted aralkyl group, or a halogen atom, and a plurality of R1 may be the same or different from each other; R2 represents an optionally substituted alkyl group or an optionally substituted aryl group; and n represents an integer of 2 to 10].

Abstract: A compound for forming an organic film shown by the formula (1A), RX)m1??(1A) wherein R represents a single bond or an organic group having 1 to 50 carbon atoms; X represents a group shown by formula (1B); and m1 represents an integer satisfying 2?m1?10, wherein X2 represents a divalent organic group having 1 to 10 carbon atoms; n1 represents 0 or 1; n2 represents 1 or 2; X3 represents a group shown by the formula (1C); and n5 represents 0, 1, or 2, wherein R10 represents a hydrogen atom or a saturated or unsaturated hydrocarbon group having 1 to 10 carbon atoms, wherein a hydrogen atom of the benzene ring in formula (1C) may be substituted with a methyl group or methoxy group. This compound for forming an organic film can provide organic film composition having good dry etching resistance, heat resistance to 400° C. or higher, high filling and planarizing properties.

Abstract: A hologram recording composition includes at least: a photopolymerizable compound containing at least a first photopolymerizable monomer; binder resin that is inactive to photopolymerization; and a photopolymerization initiator. A change in polarity of the first photopolymerizable monomer by photopolymerization reduces compatibility with the binder resin of the photopolymerizable compound than that before polymerization, the compatibility of the photopolymerizable compound before the polymerization being high.

Abstract: There is provided a pellicle for lithography which has a unique frame in that it has externally protruding (projecting) portions; to the lower end faces of these protruding portions the photomask-bonding agglutinant layer is applied so as to allow a reduction in the area of the lower end face of the pellicle frame to which conventionally the agglutinant layer was endlessly applied, whereby the pellicle induced deformation to the photomask is mitigated.

Abstract: Provided are an active-light-sensitive or radiation-sensitive resin composition in which the sensitivity is excellent, and an active-light-sensitive or radiation-sensitive film, a pattern forming method, and a method for manufacturing an electronic device, each using the active-light-sensitive or radiation-sensitive resin composition. The active-light-sensitive or radiation-sensitive resin composition contains a resin (Ab) whose polarity is changed by the action of an acid, and a compound that generates an acid upon irradiation with active light or radiation, in which the resin (Ab) includes a metal ion, and the metal type of the metal ion is at least one of metal types belonging to Groups 1 to 10 and 13 to 16 (here, excluding Mg and Cs).

Abstract: A positive resist composition comprising a polymer adapted to be decomposed under the action of acid to increase its solubility in alkaline developer and a sulfonium compound of specific structure has a high resolution. When the resist composition is processed by lithography, a pattern with minimal LER can be formed.

Abstract: A resist composition is disclosed which comprises a perovskite material with a structure having a chemical formula selected from ABX3, A2BX4, or ABX4, wherein A is a compound containing an NH3 group, B is a metal and X is a halide constituent. The perovskite material may comprise one or more of the following components: halogen-mixed perovskite material; metal-mixed perovskite material, and organic ligand mixed perovsikte material.

Abstract: Non-linear metallic thermal resist structure having more than two layers of different metals and effective eutectic temperature that is lower than eutectic temperature of a reference non-linear metallic thermal resist having only two layer of same different metals. Optionally, at least one the layers of such resist structure is doped with material different from host metals and/or deposited under conditions resulting in strain or stress in a layer at hand. Method of multi-exposure-based patterning of a substrate carrying such structure with laser pulses characterized by irradiance at levels equal to or below 10 mJ/cm2. The sequence of steps producing the required pattern on the substrate may be explicitly lacking a step of removal of a portion of the resist structure between two consecutive exposures.

Abstract: The present disclosure provides a phase shift mask. The phase shift mask includes a transparent substrate; an etch stop layer disposed on the substrate; and a tunable transparent material layer disposed on the etch stop layer and patterned to have an opening, wherein the tunable transparent material layer is designed to provide phase shift and has a transmittance greater than 90%.

Abstract: A photosensitive resin composition, a black pixel defining layer, and a display device, the composition including a binder resin including a repeating unit represented by Chemical Formula 1; a black colorant; a photopolymerizable monomer; a photopolymerization initiator; and a solvent,