Abstract: A photomask blank is processed into a transmissive photomask for use in photolithography for forming a pattern on a recipient using exposure light. The photomask blank comprises a transparent substrate, a first film of a material which is etchable by chlorine/oxygen-based dry etching, and a second film of a silicon-containing material. The second film includes a layer having a refractive index n of at least 1.6 or an extinction coefficient k of at least 0.3 with respect to the wavelength of inspection light which is longer than the exposure light.

Abstract: A photosensitive composition activatable by multiphoton absorption usable for the fabrication of a three-dimensional structure which is biodegradable and/or biocompatible and/or bioresorbable. This structure is usable as a matrix for cell culture. The photosensitive composition comprises: gelatin, collagen, a water-soluble photoinitiator, able to be excited by several photons and capable of generating singlet oxygen, optionally a cell adhesion promoter, and water. A process for preparing the photosensitive composition, a process for preparing a three-dimensional structure from the photosensitive composition, the three-dimensional structure obtained by this preparation process and a matrix for cell culture comprising this structure.

Abstract: Embodiments described herein provide a method of large area lithography. One embodiment of the method includes projecting at least one incident beam to a mask in a propagation direction of the at least one incident beam. The mask having at least one period of a dispersive element that diffracts the incident beam into order mode beams having one or more diffraction orders with a highest order N greater than 1. The one or more diffraction orders provide an intensity pattern in a medium between the mask and a substrate having a photoresist layer disposed thereon. The intensity pattern includes a plurality of intensity peaks defined by sub-periodic patterns of the at least one period. The intensity peaks write a plurality of portions in the photoresist layer such that a number of the portions in the photoresist layer corresponding to the at least one period is greater than N.

Abstract: A manufacturing system performs a lithographic patterning of a resist formed on a substrate to create a first optical grating including a plurality of structures at a first slant angle relative to the substrate. The manufacturing system performs a tunable shrinkage of the plurality of structures to adjust the first slant angle to a target slant angle different from the first slant angle. In some embodiments, the manufacturing system performs a post-processing of the plurality of structures to create a second optical grating from the first optical grating. The post-processing may adjust at least one of: a refractive index, a height, and a volume of the first optical grating.

Abstract: A reflective mask blank includes a backside conductive film on a back surface of a substrate. The backside conductive film has a laminated structure including a stress compensation layer and a conductive layer in this order from the substrate side. The conductive layer includes a metal nitride. The stress compensation layer has a compressive stress and the stress compensation layer includes at least one compound selected from the group consisting of oxides, oxynitrides, and nitrides, each having an absorption coefficient (k) over the wavelength range of 400 nm to 800 nm being 0.1 or less. The conductive layer has a thickness of 5 nm or more and 30 nm or less. The backside conductive film has a total thickness of 50 nm or more.

Abstract: The present application relates to a film mask comprising: a transparent substrate; a darkened light-shielding pattern layer provided on the transparent substrate; and an embossed pattern part provided on a surface of the transparent substrate, which is provided with the darkened light-shielding pattern layer, a method for manufacturing the same, a method for forming a pattern by using the same, and a pattern formed by using the same.

Abstract: A color filter (CF) substrate, a manufacturing method thereof and a display panel are provided. The manufacturing method of the substrate includes: providing a base substrate; and forming a black matrix layer and a plurality of first sub-pixel units on the base substrate, wherein the black matrix layer and the plurality of first sub-pixel units are made of photoresist of a same material, the material of the photoresist includes an irreversible thermochromic pigment, the photoresist is changed into black color upon being heated, and a color of the photoresist before color change is the same as a color of the first sub-pixel units.

Abstract: A compound shown by the following general formula (1-1), AR1 and AR2 each independently represent an aromatic ring or an aromatic ring containing at least one nitrogen and/or sulfur atom, two AR1s, AR1 and AR2, or two AR2s are optionally bonded; AR3 represents a benzene, naphthalene, thiophene, pyridine, or diazine ring; A represents an organic group; B represents an anionic leaving group; Y represents a divalent organic group; “p” is 1 or 2; “q” is 1 or 2; “r” is 0 or 1; “s” is 2 to 4; when s=2, Z represents a single bond, divalent atom, or divalent organic group; and when s=3 or 4, Z represents a trivalent or quadrivalent atom or organic group. This compound cures to form an organic film, and also forms an organic under layer film.

Abstract: The present disclosure provides a mask. The mask includes a substrate; an etch stop layer disposed on the substrate, wherein the etch stop layer includes at least one of ruthenium oxide, tungsten nitride, and titanium nitride and is doped with at least one of phosphorous (P), calcium (Ca), and sodium (Na); and a material layer disposed on the etch stop layer and patterned to have an opening, wherein the etch stop layer completely covers a portion of the substrate within the opening.

Abstract: Provided are a pattern formation method and a method for manufacturing a polarizing plate using the pattern formation method, the pattern formation method having: a step for forming, on a substrate, a linear guide pattern which is arranged at a predetermined pitch and is compatible with a portion of block chains of a block copolymer, and a neutral pattern embedded in the pattern of the guide pattern; a step for forming a layer including a block copolymer on the guide pattern and the neutral pattern; a step for heat-treating the layer including the block copolymer and forming a lamellar structure in which lamellar boundaries are arranged perpendicular to the substrate by microphase separation of the block copolymer; and a step for selectively removing a portion of the block chains of the block copolymer and thereby forming a line-and-space-shaped fine pattern having a smaller pitch than the guide pattern.

Abstract: The disclosure belongs to the technical field of photopolymer materials, and more particularly relates to a dual image storage material as well as a preparation method and application thereof. The dual image storage material is obtained by selective photoreaction of 1 to 50 parts by weight of an organic fluorescent material, 7 to 50 parts by weight of liquid crystal, 0.2 to 10 parts by weight of a photoinitiator and 33 to 67 parts by weight of photopolymerizable monomers. The obtained dual image storage material can present a high-brightness holographic pattern under sunlight and a fluorescent pattern under ultraviolet light in the same spatial position. The presented holographic and fluorescent patterns may be the same or different. The obtained dual image storage material can be used in the field of optical anti-counterfeiting, optical information storage, displays or the like.

Abstract: A laser processing method comprises generating a laser beam comprising laser pulses having a duration less than 1000 ps, focussing the laser beam to form a focal region inside a transparent material and varying the position of at least one of the focal region and the transparent material so as to provide a pulse-to-pulse overlap of between 45% and 99%, thereby to form a smooth material modification inside the transparent material.

Abstract: A reticle and a method for manufacturing the same are provided. The reticle includes a mask substrate, a reflective multilayer (ML), a capping layer and an absorption composite structure. The reflective ML is positioned over a front-side surface of the mask substrate. The capping layer is positioned over the reflective ML. The absorption composite structure is positioned over the capping layer. The absorption composite structure includes a first absorption layer, a second absorption layer, a third absorption layer and an etch stop layer. The first absorption layer is positioned over the capping layer. The second absorption layer is positioned over the first absorption layer. The third absorption layer is positioned over the second absorption layer. The etch stop layer is positioned between the first absorption layer and the second absorption layer. The first absorption layer and the second absorption layer are made of the same material.

Abstract: The present disclosure teaches a photolithography plate and a mask correction method, and relates to the field of semiconductor technologies. In forms of the mask correction method, a patterned mask is formed on a substrate, a location of a scattering bar embedded in the substrate is determined according to the mask, and an opening is formed at the determined location so as to embed the scattering bar in the opening. A scattering bar is embedded in a substrate of a photolithography plate so as to effectively avoid the impact of the scattering bar on a mask pattern, reduce a deposition loss, improve the correction effect, and shorten a correction time.

Abstract: A photosensitive composition including: a plurality of quantum dots, wherein the quantum dot includes an organic ligand bound to a surface of the quantum dot; a photoinitiator; a binder including a carboxylic acid group; a photopolymerizable monomer having a carbon-carbon double bond; and a solvent, wherein the photoinitiator includes a first photoinitiator including an oxime compound and a second photoinitiator including at least one selected from a phosphine oxide compound and an amino ketone compound.

Abstract: A method of testing a photomask assembly is disclosed. The method includes placing a photomask assembly into a chamber. The photomask assembly includes a pellicle attached to a first side of a photomask. The method further includes exposing the photomask assembly to a radiation source in the chamber. The exposing of the photomask assembly includes illuminating an entirety of an area of the photomask covered by the pellicle throughout an entire illumination time.

Abstract: A photosensitive composition including a quantum dot dispersion, a photopolymerizable monomer having a carbon-carbon double bond, and a photoinitiator, wherein the quantum dot dispersion includes an acid group-containing polymer and a plurality of quantum dots dispersed in the acid group-containing polymer, and wherein the acid group-containing polymer includes a copolymer of a monomer combination including a first monomer having a carboxylic acid group or a phosphonic acid group and a carbon-carbon double bond and a second monomer having a carbon-carbon double bond and a hydrophobic group and not having a carboxylic acid group and a phosphonic acid group.

Abstract: Novel photoacid generator compounds are provided. Compositions that include the novel photoacid generator compounds are also provided. The present disclosure further provides methods of making and using the photoacid generator compounds and compositions disclosed herein. The compounds and compositions are useful as photoactive components in chemically amplified resist compositions for various microfabrication applications.

Abstract: The present application relates to a film mask comprising: a transparent substrate; a darkened light-shielding pattern layer provided on the transparent substrate; and groove portions provided in a region where the darkened light-shielding pattern layer is not provided, a method for manufacturing the same, a method for forming a pattern by using the same, and a pattern manufactured by using the same.

Abstract: The present application relates to a film mask including: a transparent substrate; a darkened light-shielding pattern layer provided on the transparent substrate; and a release force enhancement layer provided on the darkened light-shielding pattern layer and having surface energy of 30 dynes/cm or less, a method for manufacturing the same, and a method for forming a pattern using the film mask.