Abstract: Provided are a pattern formation method and a method for manufacturing a polarizing plate using the pattern formation method, the pattern formation method having: a step for forming, on a substrate, a linear guide pattern which is arranged at a predetermined pitch and is compatible with a portion of block chains of a block copolymer, and a neutral pattern embedded in the pattern of the guide pattern; a step for forming a layer including a block copolymer on the guide pattern and the neutral pattern; a step for heat-treating the layer including the block copolymer and forming a lamellar structure in which lamellar boundaries are arranged perpendicular to the substrate by microphase separation of the block copolymer; and a step for selectively removing a portion of the block chains of the block copolymer and thereby forming a line-and-space-shaped fine pattern having a smaller pitch than the guide pattern.

Abstract: A reticle and a method for manufacturing the same are provided. The reticle includes a mask substrate, a reflective multilayer (ML), a capping layer and an absorption composite structure. The reflective ML is positioned over a front-side surface of the mask substrate. The capping layer is positioned over the reflective ML. The absorption composite structure is positioned over the capping layer. The absorption composite structure includes a first absorption layer, a second absorption layer, a third absorption layer and an etch stop layer. The first absorption layer is positioned over the capping layer. The second absorption layer is positioned over the first absorption layer. The third absorption layer is positioned over the second absorption layer. The etch stop layer is positioned between the first absorption layer and the second absorption layer. The first absorption layer and the second absorption layer are made of the same material.

Abstract: The present disclosure teaches a photolithography plate and a mask correction method, and relates to the field of semiconductor technologies. In forms of the mask correction method, a patterned mask is formed on a substrate, a location of a scattering bar embedded in the substrate is determined according to the mask, and an opening is formed at the determined location so as to embed the scattering bar in the opening. A scattering bar is embedded in a substrate of a photolithography plate so as to effectively avoid the impact of the scattering bar on a mask pattern, reduce a deposition loss, improve the correction effect, and shorten a correction time.

Abstract: A photosensitive composition including: a plurality of quantum dots, wherein the quantum dot includes an organic ligand bound to a surface of the quantum dot; a photoinitiator; a binder including a carboxylic acid group; a photopolymerizable monomer having a carbon-carbon double bond; and a solvent, wherein the photoinitiator includes a first photoinitiator including an oxime compound and a second photoinitiator including at least one selected from a phosphine oxide compound and an amino ketone compound.

Abstract: A photosensitive composition including a quantum dot dispersion, a photopolymerizable monomer having a carbon-carbon double bond, and a photoinitiator, wherein the quantum dot dispersion includes an acid group-containing polymer and a plurality of quantum dots dispersed in the acid group-containing polymer, and wherein the acid group-containing polymer includes a copolymer of a monomer combination including a first monomer having a carboxylic acid group or a phosphonic acid group and a carbon-carbon double bond and a second monomer having a carbon-carbon double bond and a hydrophobic group and not having a carboxylic acid group and a phosphonic acid group.

Abstract: A method of testing a photomask assembly is disclosed. The method includes placing a photomask assembly into a chamber. The photomask assembly includes a pellicle attached to a first side of a photomask. The method further includes exposing the photomask assembly to a radiation source in the chamber. The exposing of the photomask assembly includes illuminating an entirety of an area of the photomask covered by the pellicle throughout an entire illumination time.

Abstract: Novel photoacid generator compounds are provided. Compositions that include the novel photoacid generator compounds are also provided. The present disclosure further provides methods of making and using the photoacid generator compounds and compositions disclosed herein. The compounds and compositions are useful as photoactive components in chemically amplified resist compositions for various microfabrication applications.

Abstract: The present application relates to a film mask comprising: a transparent substrate; a darkened light-shielding pattern layer provided on the transparent substrate; and groove portions provided in a region where the darkened light-shielding pattern layer is not provided, a method for manufacturing the same, a method for forming a pattern by using the same, and a pattern manufactured by using the same.

Abstract: The present application relates to a film mask including: a transparent substrate; a darkened light-shielding pattern layer provided on the transparent substrate; and a release force enhancement layer provided on the darkened light-shielding pattern layer and having surface energy of 30 dynes/cm or less, a method for manufacturing the same, and a method for forming a pattern using the film mask.

Abstract: According to several embodiments, a composition of matter includes: a three-dimensional structure comprising photo polymerized molecules. At least some of the photo polymerized molecules further comprise one or more protected click-chemistry compatible functional groups; and at least portions of one or more surfaces of the three-dimensional structure are functionalized with one or more of the protected click-chemistry compatible functional groups.

Abstract: In a substrate for use as a mask blank including a first main surface, a normal region, a frame-shaped region and inner region are present on the first main surface. The frame-shaped region includes first to fourth corner region and first to fourth middle region. The inner region has a flatness of 100 nm or less, the flatness being determined on the basis of a least-squares plane PP1 of the normal region. When one of the corner regions is referred to as an n-th corner region and two middle regions nearest to the n-th corner region are respectively referred to as a first near middle region and a second near middle region, the specific relationship regarding the surface profile is satisfied in the n-th corner region and the first and second near middle regions.

Abstract: A method of manufacturing a photomask includes at least the following steps. First, a phase shift layer and a hard mask layer are formed on a light transmitting substrate. A predetermined mask pattern is split into a first pattern and a second pattern. A series of processes is performed so that the hard mask layer and the phase shift layer have the first pattern and the second pattern. The series of processes includes at least the following steps. First, a first exposure process for transferring the first pattern is performed. Thereafter, a second exposure process for transferring the second pattern is performed. The first exposure process and the second exposure process are executed by different machines.

Abstract: A resist composition including a polymeric compound having a structural unit represented by formula (a0-1) and an acid generator consisting of a compound represented by general formula (b1-1) in which Ra00 represents an acid dissociable group represented by general formula (a0-r1-1); Ra01, Ra02, Ra031, Ra032 and Ra033 represent a hydrocarbon; Ya0 represents a quaternary carbon atom; R101 represents a hydrocarbon group having at least 1 hydroxy group as a substituent; Y101 represents a single bond or a divalent linking group containing an oxygen atom; and V101 represents a single bond, an alkylene group or a fluorinated alkylene group).

Abstract: A compounded polymer material that can be laser marked is provided. The compounded polymer material includes an enhancer of nitrides, carbides, silicides, or combinations thereof. Upon forming the compounded polymer material into an article and exposing it to laser radiation, the irradiated portion of the compounded polymer material absorbs the laser radiation, increases in temperature, and forms a mark in the article. A lightness value difference (?L) between the mark and the non-irradiated portion of the article has an absolute value of at least 5, and the lightness value difference between the mark and the non-irradiated portion is greater than if the polymer material did not include the enhancer.

Abstract: A photosensitive composition including a quantum dot dispersion, a photopolymerizable monomer having a carbon-carbon double bond, and a photoinitiator, wherein the quantum dot dispersion includes an acid group-containing polymer and a plurality of quantum dots dispersed in the acid group-containing polymer, and wherein the acid group-containing polymer includes a copolymer of a monomer combination including a first monomer having a carboxylic acid group or a phosphonic acid group and a carbon-carbon double bond and a second monomer having a carbon-carbon double bond and a hydrophobic group and not having a carboxylic acid group and a phosphonic acid group.

Abstract: A method for forming a photomask is provided. The method includes forming a light blocking layer over a transparent substrate. The method includes forming a mask layer over the light blocking layer. The mask layer covers a first portion of the light blocking layer, and the first portion is over a second portion of the transparent substrate. The method includes removing the light blocking layer, which is not covered by the mask layer. The method includes removing the mask layer. The first portion of the light blocking layer is removed during removing the mask layer. The method includes removing the second portion of the transparent substrate to form a first recess in the transparent substrate. The method includes forming a first light blocking structure in the first recess.

Abstract: The application provides a mask disposed above a panel; the panel includes a planarization layer, and the planarization layer includes a plurality of trenches, the planarization layer is coated with a layer of TITO; the mask is provided with transparent regions, semi-transparent regions and opaque regions; the transparent regions are respectively arranged on the periphery of the display area and the semi-transparent regions are respectively arranged on the area directly above the trenches on the periphery of the display area; the opaque regions are respectively disposed directly above on each place other than the trenches of the panel, the transparent regions guide the light to expose and remove the TITO in the trenches on the periphery of the display area, the semi-transparent regions weaken the light and exposes and removes the TITO in trenches of the display area, the opaque regions block the light to avoid the exposure of TITO.

Abstract: A method of manufacturing a photomask includes depositing a first absorbing layer over a substrate, patterning the first absorbing layer using a photoresist, and depositing a conformal second absorbing layer along surfaces of the first absorbing layer.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to an extreme ultraviolet (EUV) lithography mask and methods of manufacture. The EUV mask structure includes: a reflective layer; a capping material on the reflective layer; a buffer layer on the capping layer; alternating absorber layers on the buffer layer; and a capping layer on the top of the alternating absorber layers.

Abstract: To provide an alkaline developable negative-type photosensitive resin composition from which a cured film that has a high-resolution and low-taper pattern shape and that are excellent in heat resistance and light blocking property can be obtained. A negative-type photosensitive resin composition is characterized by containing an (A1) first resin, a (A2) second resin, a (C) photopolymerization initiator, and a (D) coloring agent, wherein the (A1) first resin is an (A1-1) polyimide and/or an (A1-2) polybenzo-oxazole, and wherein the (A2) second resin is one or more species selected from a (A2-1) polyimide precursor, a (A2-2) polybenzo-oxazole precursor, a (A2-3) polysiloxane, a (A2-4) cardo based resin, and an (A2-5) acrylic resin, and wherein a content ratio of the (A1) first resin in a total of 100 mass % of the (A1) first resin and the (A2) second resin is within the range of 25 to 90 mass %.