Abstract: A method of removing layers of an extreme ultraviolet (EUV) pattern stack is provided. The method includes forming one or more resist templates on an upper hardmask layer. The method further includes exposing portions of the surface of the upper hardmask layer to a dry etch process to produce modified and activated surfaces. The method further includes etching the modified and activated surfaces to expose an underlying organic planarization layer.

Abstract: The present invention employs a compound represented by the following formula (0): wherein RY is a linear, branched, or cyclic alkyl group of 1 to 30 carbon atoms or an aryl group of 6 to 30 carbon atoms; RZ is an N-valent group of 1 to 60 carbon atoms or a single bond; each RT is independently an alkyl group of 1 to 30 carbon atoms optionally having a substituent, an aryl group of 6 to 40 carbon atoms optionally having a substituent, an alkenyl group of 2 to 30 carbon atoms optionally having a substituent, an alkoxy group of 1 to 30 carbon atoms optionally having a substituent, a halogen atom, a nitro group, an amino group, a cyano group, a thiol group, a hydroxy group, or a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group, wherein the alkyl group, the alkenyl group, and the aryl group each optionally contain an ether bond, a ketone bond, or an ester bond, wherein at least one RT is a hydroxy group or a group in which a hydrogen atom of a hydroxy group is

Abstract: A method for forming a photo-mask includes providing a first pattern, wherein the first pattern includes a first light-transmitting region and a first light-shielding region; transforming the first pattern into a second pattern, wherein the second pattern includes a second light-transmitting region and a second light-shielding region, the second light-transmitting region is located within range of the first light-transmitting region, and the second light-transmitting region has an area which is smaller than that of the first light-transmitting region, the second light-shielding region includes the entire region of the first light-shielding region, and the second light-shielding region has an area which is greater than that of the first light-shielding region; and forming the second pattern on a photo-mask substrate to form a photo-mask, wherein the photo-mask is used in an ion implantation process of a material layer.

Abstract: The present disclosure relates to a photopolymer composition including: a polymer matrix or a precursor thereof; a photoreactive monomer including a polyfunctional (meth)acrylate monomer having a refractive index of 1.5 or less and a viscosity at 25° C. of 100 cps or less, and a monofunctional (meth)acrylate monomer having a refractive index of 1.5 or more; and a photoinitiator, wherein a content of the monofunctional (meth)acrylate monomer having a refractive index of 1.5 or more in the photoreactive monomer is 60 wt % or more. The present disclosure also relates to a hologram recording medium produced from the photopolymer composition, an optical element including the hologram recording medium, and a holographic recording method using the photopolymer composition.

Abstract: The present disclosure is to provide a photopolymer composition including a polymer matrix or a precursor thereof having a specific chemical structure; a photoreactive monomer; and a photoinitiator. The present disclosure is also to provide a hologram recording medium, an optical element, and a holographic recording method using the photopolymer composition.

Abstract: A photosensitive composition includes a plurality of quantum dots including an organic ligand on the surface thereof; a binder; a photopolymerizable monomer composition; photoinitiator; and a solvent, wherein the photopolymerizable monomer includes a main monomer having 1 to 6 carbon-carbon double bonds, a first accessory monomer having 8 to 20 carbon-carbon double bonds, and a second accessory monomer represented by Chemical Formula A; and a method of preparing the photosensitive composition and a quantum dot-polymer composite pattern prepared therefrom are provided: R1O-(L1)m-L3-A-L4-(L2)n-OR2??Chemical Formula A wherein, A, L1, L2, L3, L4, R1, and R2 are the same as defined herein.

Abstract: A resin comprising a structural unit represented by formula (I0): wherein A1, A2 and A3 each independently represent a C2-C18 divalent hydrocarbon group, R1, R2, R3 and R4 each independently represent a hydrogen atom or a C1-C6 saturated hydrocarbon group, X1 and X2 each independently represent *—O—CO—, —O—CO—O— or —O—, and * represents a binding site to A2 or A3.

Abstract: According to the present invention, provided is a mask blank (10), in which: a light shielding film (4) has a single layer structure or a laminate structure of a plurality of layers; at least one layer of the light shielding film (4) is formed of a material which contains a transition metal and silicon and is free from nitrogen and oxygen, or a material which contains a transition metal, silicon, and nitrogen and satisfies a condition of the following expression (1); a phase shift film (2) has a surface layer and a layer other than the surface layer; and the layer other than the surface layer is formed of a material which contains a transition metal, silicon, nitrogen, and oxygen, has a content of oxygen of 3 atom % or more, and satisfies a condition of the following expression (A). CN?9.0×10?6×RM4?1.65×10?4×RM3?7.718×10?2×RM2+3.611×RM?21.084?? Expression (1) 0.04×AS?0.

Abstract: A method of forming angled structures in a substrate. The method may include the operation of forming a mask by etching angled mask features in a mask layer, disposed on a substrate base of the substrate, the angled mask features having sidewalls, oriented at a non-zero angle of inclination with respect to perpendicular to a main surface of the substrate. The method may include etching the substrate with the mask in place, the etching comprising directing ions having trajectories arranged at a non-zero angle of incidence with respect to a perpendicular to the main surface.

Abstract: According to several embodiments, a composition of matter includes: a three-dimensional structure comprising photo polymerized molecules. At least some of the photo polymerized molecules further comprise one or more protected click-chemistry compatible functional groups; and at least portions of one or more surfaces of the three-dimensional structure are functionalized with one or more of the protected click-chemistry compatible functional groups. An additive manufacturing resin suitable for fabricating a click-chemistry compatible composition of matter includes: a photo polymerizable compound; and a click-chemistry compatible compound.

Abstract: The present disclosure relates to a method for forming a pellicle for extreme ultraviolet lithography, the method comprising: forming a coating of a first material on a peripheral region of a main surface of a carbon nanotube pellicle membrane, the membrane including a carbon nanotube film, arranging the carbon nanotube pellicle membrane on a pellicle frame with the peripheral region facing a support surface of the pellicle frame, wherein the support surface of the pellicle frame is formed by a second material, and bonding together the coating of the carbon nanotube pellicle membrane and the pellicle support surface by pressing the carbon nanotube pellicle membrane and the pellicle support surface against each other. The present disclosure relates also relates to a method for forming a reticle system for extreme ultraviolet lithography.

Abstract: A reticle and a method for manufacturing a reticle are provided. The method includes forming a reflective multilayer (ML) over a front-side surface of a mask substrate. The method further includes forming a capping layer over the reflective ML. The method further includes forming a sacrificial multilayer over the capping layer. The method further includes forming an opening in the sacrificial multilayer to expose the capping layer. The method further includes forming a first absorption layer over the sacrificial multilayer and covering the capping layer in the opening. The method further includes removing the first absorption layer outside the opening in the sacrificial multilayer to form a first absorption pattern on a portion of the capping layer.

Abstract: The invention relates to a method for producing a structure with spatial encoded functionality, the method comprising: providing in a volume (114) a first photosensitive material (116) that is two-photon crosslinking compatible, generating in the volume (114) a framework of crosslinked first photo-sensitive material (116), the generating of the framework comprising exposing the first photosensitive material (116) with a first focused laser beam (118) according to a first pattern for specifically initiating a two-photon crosslinking of the first photosensitive material (116) in accordance with the first pattern, removing from the volume (114) any remaining non-crosslinked portions of the first photosensitive material (116), providing to the volume (114) a second photosensitive material (116) that is two-photon crosslinking compatible, generating in the volume (114) the structure, the generating of the structure comprising exposing the second photosensitive material (116) with a second focused laser beam (11

Abstract: Masks and methods of forming the same are disclosed. The mask includes a substrate, a phase shift layer, a shading layer and a passivation layer. The phase shift layer is disposed over the substrate. The shading layer is disposed over the phase shift layer. The passivation layer is disposed over and in physical contact with the shading layer.

Abstract: A mask, a device and method for exposure are provided. The mask of the present disclosure includes: a first transparent region configured to allow light of a first wavelength to pass therethrough and filter out light of a second wavelength; and a second transparent region configured to allow the light of the second wavelength to pass therethrough, wherein the light of the second wavelength is light for exposure.

Abstract: The present invention relates to a compound having a novel structure, a photopolymer composition including the compound as a dye, a hologram recording medium produced from the photopolymer composition, an optical element including the hologram recording medium, and a holographic recording method using the hologram recording medium.

Abstract: A photopolymer composition comprising a polymer matrix or a precursor thereof including a reaction product between (i) a (meth)acrylate-based (co)polymer in which a silane-based functional group is located in a branched chain and an equivalent weight of the silane-based functional group is 300 g/eq to 2000 g/eq, and (ii) a linear silane crosslinking agent; a photoreactive monomer; and a photoinitiator, a hologram recording medium using the same, an optical element using the hologram recording medium, and a holographic recording method. The photopolymer composition can more easily provide a photopolymer layer having improved durability against temperature and humidity while having a large refractive index modulation value.

Abstract: A photomask blank is provided comprising a transparent substrate, a first film of chromium-containing material on the substrate, and a second film of silicon/oxygen-containing material disposed contiguous to the first film. The second film includes a first layer contiguous to the first film and a second layer spaced apart from the first layer in film thickness direction. The oxygen content of the first layer is lower than the oxygen content of the second layer. During etching of the first film, this setting prevents an etching rate from ramping up at the interface between the first and second films.

Abstract: A coloring composition contains a halogenated zinc phthalocyanine pigment A, an isoindoline pigment B, a resin C, and a curable compound D having an ethylenically unsaturated bonding group, in which the resin C includes a resin C1 having a repeating unit derived from a polymerizable compound Cm having a C Log P value of 3.0 or more with the C Log P value being a calculated value of a Log P which is the common logarithm of a partition coefficient P of 1-octanol/water, and having a cyclic structure in a molecule thereof, and the ratio of the mass of the halogenated zinc phthalocyanine pigment A to the mass of the isoindoline pigment B is 55:45 to 85:15 in terms of the mass of the halogenated zinc phthalocyanine pigment A:the mass of the isoindoline pigment B.

Abstract: A photomask blank is processed into a transmissive photomask for use in photolithography for forming a pattern on a recipient using exposure light. The photomask blank comprises a transparent substrate, a first film of a material which is etchable by chlorine/oxygen-based dry etching, and a second film of a silicon-containing material. The second film includes a layer having a refractive index n of at least 1.6 or an extinction coefficient k of at least 0.3 with respect to the wavelength of inspection light which is longer than the exposure light.