Abstract: A resist underlayer film material used in multilayer resist method contains (A) compound shown by following general formula (1), and (B) organic solvent, where X independently represents monovalent organic group shown by following general formula (2); W contains an “m” number of partial structures each independently shown by following formula (3); “m” and “n” each represent an integer of 1 to 10; broken lines represent bonding arms; Z represents aromatic group; A represents single bond or —O—(CH2)p—; “k” represents integer of 1 to 5; “p” represents integer of 1 to 10; R01 represents hydrogen atom or monovalent organic group having 1 to 10 carbon atoms. Material is capable of forming resist underlayer film excellent in planarizing property in fine patterning process by multilayer resist method in semiconductor-device manufacturing process; and patterning processes and methods for forming resist underlayer film use material.

Abstract: The present disclosure relates to a photopolymer composition, and more particularly, to a compound having a novel structure, a photopolymer composition including the compound as a dye, a hologram recording medium produced from the photopolymer composition, an optical element including the hologram recording medium, and a holographic recording method using the photopolymer composition.

Abstract: Systems and methods described herein relate to the manufacture of optical elements and optical systems. An example system may include an optical component configured to direct light from a light source to illuminate a photoresist material at a desired angle and to expose at least a portion of an angled structure in the photoresist material, where the photoresist material overlays at least a portion of a top surface of a substrate. The optical component includes a container containing an light-coupling material that is selected based in part on the desired angle. The optical component also includes a mirror arranged to reflect at least a portion of the light to illuminate the photoresist material at the desired angle.

Abstract: The present disclosure relates to a hologram recording medium having one surface with a higher surface energy than a polymer resin layer containing at least one polymer selected from the group consisting of triacetyl cellulose, alicyclic olefin polymer and polyethylene terephthalate, a hologram recording medium wherein the surface energy of any one surface is 50 mN/m or more, and an optical element comprising the hologram medium.

Abstract: A salt represented by formula (I) and a resist composition including the salt are described. wherein, in formula (I), Q1 and Q2 each independently represent a fluorine atom or the like, R1 and R2 each independently represent a hydrogen atom or the like, Z represents an integer of 0 to 6, X1 represents *—CO—O—, *—O—CO—, *—O—CO—O— or *—O—, L1 represents a single bond or an alkanediyl group having 1 to 6 carbon atoms, A1 represents a divalent cyclic hydrocarbon group having 3 to 36 carbon atoms which may have a substituent, L2 represents a single bond, a carbonyl group or an alkanediyl group having 1 to 6 carbon atoms, A2 represents a divalent saturated hydrocarbon group having 1 to 24 carbon atoms which may have a substituent, R3, R4 and R5 each independently represent a saturated hydrocarbon group having 1 to 6 carbon atoms, and Z+ represents an organic cation.

Abstract: New monomer and polymer materials that comprise one or more Te atoms. In one aspect, tellurium-containing monomers and polymers are provided that are useful for Extreme Ultraviolet Lithography.

Abstract: In described examples, a microelectromechanical system (MEMS) includes a first element and a second element. The first element is mounted on a substrate and has a first contact surface. The second element is mounted on the substrate and has a second contact surface that protrudes from the second element to form an acute contact surface. The first element and/or the second element is/are operable to move in: a first direction, such that the first contact surface comes in contact with the second contact surface; and a second direction, such that the second contact surface separates from the first contact surface.

Abstract: A pellicle for extreme ultraviolet (EUV) lithography is based on yttrium carbide and used in a EUV lithography process. The pellicle for EUV lithography includes a pellicle layer that has a core layer containing yttrium carbide. The yttrium carbide is YCx in which the atomic percentage of carbon is within a range of 25% to 45%.

Abstract: A polymer blend, including at least one organic semiconductor (OSC) polymer and at least one photosensitizer, such that the at least one OSC polymer is a diketopyrrolopyrrole-fused thiophene polymeric material, wherein the fused thiophene is beta-substituted.

Abstract: The present disclosure provides an apparatus for a lithography process in accordance with some embodiments. The apparatus includes a pellicle membrane, a pellicle frame including a material selected from the group consisting of boron nitride (BN), boron carbide (BC), and a combination thereof, a mask, a first adhesive layer that secures the pellicle membrane to the pellicle frame, and a second adhesive layer that secures the pellicle frame to the mask.

Abstract: A method to control the density of a three-dimensional photonic crystal template involves changing the irradiation time from at least four laser beams to yield a periodic percolating matrix of mass and voids free of condensed matter from a photoresist composition. The photoresist composition includes a photoinitiator at a concentration where the dose or irradiation is controlled by the irradiation time and is less than the irradiation time that would convert all photoinitiator to initiating species such that the density of the three-dimensional photonic crystal template differs for different irradiation times. A deposition of reflecting or absorbing particles can be patterned on the surface of the photoresist composition to form a template with varying densities above different areas of the substrate.

Abstract: Proposed is a photoresist composition for a KrF light source, which exhibits a vertical profile compared to conventional KrF positive photoresists by adding a resin capable of increasing transmittance in order to form a semiconductor pattern, particularly a chemically amplified positive photoresist composition for improving a pattern profile, which includes, based on the total weight of the composition, 5 to 60 wt % of a polymer resin, 0.1 to 10 wt % of a transmittance-increasing resin additive represented by Chemical Formula 1, 0.05 to 10 wt % of a photoacid generator, 0.01 to 5 wt % of an acid diffusion inhibitor, and the remainder of a solvent, thus making it possible to provide a composition exhibiting a vertical profile, enhanced sensitivity and a superior processing margin compared to conventional positive photoresists.

Abstract: An acetal-protected polysiloxane composition, used as a photosensitive composition and a coating composition for forming a flat film on a substrate to be processed for performing pattern reversal. A coating composition or photosensitive composition including: a polysiloxane obtained from a hydrolysis-condensation product of a hydrolyzable silane having 2 to 4 hydrolyzable groups in a molecule by protecting the condensation product's silanol groups with acetal groups, wherein in the hydrolysis-condensation product, an organic group bonded to silicon atoms through Si—C bonds exists in molar ratio of 0?(organic group)/(Si)?0.29 on average.

Abstract: Multiple patterning approaches using radiation sensitive organometallic materials is described. In particular, multiple patterning approaches can be used to provide distinct multiple patterns of organometallic material on a hardmask or other substrate through a sequential approach that leads to a final pattern. The multiple patterning approach may proceed via sequential lithography steps with multiple organometallic layers and may involve a hardbake freezing after development of each pattern. Use of an organometallic resist with dual tone properties to perform pattern cutting and multiple patterning of a single organometallic layer are described. Corresponding structures are also described.

Abstract: A pellicle frame includes a check valve, wherein the check valve is configured to permit gas flow from an interior of the pellicle to an exterior of the pellicle. The pellicle frame further includes a bottom surface of the frame defines only a single recess therein. The pellicle frame further includes a gasket configured to fit within the single recess.

Abstract: The present disclosure relates to a photopolymer composition including a polymer matrix or a precursor thereof having a predetermined chemical structure; a photoreactive monomer; and a photoinitiator, a hologram recording medium, an optical element and a holographic recording method using the same.

Abstract: New photoresist and topcoat compositions are provided that are useful in a variety of applications. In one aspect, new photoresist compositions are provided that comprise: (a) a first matrix polymer; (b) one or more acid generators; and (c) one or more additive compounds of Formulae (I) and/or (II).

Abstract: A photosensitive composition includes a plurality of quantum dots including an organic ligand on the surface thereof; a binder; a photopolymerizable monomer composition; photoinitiator; and a solvent, wherein the photopolymerizable monomer includes a main monomer having 1 to 6 carbon-carbon double bonds, a first accessory monomer having 8 to 20 carbon-carbon double bonds, and a second accessory monomer represented by Chemical Formula A; and a method of preparing the photosensitive composition and a quantum dot-polymer composite pattern prepared therefrom are provided: R1O-(L1)m-L3-A-L4-(L2)n-OR2??Chemical Formula A wherein, A, L1, L2, L3, L4, R1, and R2 are the same as defined herein.

Abstract: Provided is a resist underlayer film-forming composition for forming resist underlayer film usable as hard mask and removable by wet etching process using chemical solution such as sulfuric acid/hydrogen peroxide. A resist underlayer film-forming composition for lithography includes a component (A) and component (B), the component (A) includes a hydrolyzable silane, hydrolysis product thereof, or hydrolysis-condensation product thereof, the hydrolyzable silane includes hydrolyzable silane of Formula (1): R1aR2bSi(R3)4?(a+b) (where R1 is organic group of Formula (2): and is bonded to silicon atom through a Si—C bond; R3 is an alkoxy group, acyloxy group, or halogen group; is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3), and the component (B) is cross-linkable compound having ring structure having alkoxymethyl group or hydroxymethyl group, cross-linkable compound having epoxy group or blocked isocyanate group.

Abstract: A method includes forming a photoresist layer over a substrate, wherein the photoresist layer includes a polymer, a sensitizer, and a photo-acid generator (PAG), wherein the sensitizer includes a resonance ring that includes nitrogen and at least one double bond. The method further includes performing an exposing process to the photoresist layer. The method further includes developing the photoresist layer, thereby forming a patterned photoresist layer.