Abstract: In a method of forming a pattern, a photo resist layer is formed over an underlying layer, the photo resist layer is exposed to an actinic radiation carrying pattern information, the exposed photo resist layer is developed to form a developed resist pattern, a directional etching operation is applied to the developed resist pattern to form a trimmed resist pattern, and the underlying layer is patterned using the trimmed resist pattern as an etching mask.

Abstract: A pellicle for protecting a photomask from contaminant particles is provided. The pellicle includes a pellicle membrane containing at least one porous film. The at least one porous film includes a network of a plurality of nanotubes. At least one nanotube of the plurality of nanotubes includes a core nanotube and a shell nanotube surrounding the core nanotube. The core nanotube includes a material different from the shell nanotube. The pellicle further includes a pellicle border attached to the pellicle membrane along a peripheral region of the pellicle membrane and a pellicle frame attached to the pellicle border.

Abstract: Method of manufacturing semiconductor device includes forming photoresist layer over substrate. Photoresist layer is selectively exposed to radiation, and selectively exposed photoresist layer developed. Photoresist composition includes photoactive compound, crosslinker, copolymer.

Abstract: A reticle enclosure includes a base including a first surface, a cover including a second surface and disposed on the base, wherein the base and the cover form an internal space therebetween to include a reticle, and a layer of elastomer or gelatinous material disposed on at least one of the first surface and the second surface, wherein the layer of elastomer or gelatinous material is disposed between the base and the cover and contacts either the base or the cover.

Abstract: A reticle is provided. The reticle includes a first reflective multilayer (ML) over a mask substrate and a capping layer over the first reflective ML. The reticle also includes a first absorption layer over the capping layer and a second reflective multilayer (ML) over the first absorption layer. The reticle further includes an etch stop layer over the second reflective ML and a third reflective multilayer (ML) over the etch stop layer. In addition, the reticle includes an absorption film pair over the third reflective ML.

Abstract: Provided are a novel sulfonium salt having high photosensitivity to g-rays or h-rays; a novel photoacid generator containing a sulfonium salt that has high photosensitivity to g-rays or h-rays, has high solubility in solvents and cationically polymerizable compounds such as epoxy compounds, and has an excellent storage stability in compositions containing the cationically polymerizable compounds; and the like. The present invention relates to a sulfonium salt represented by the formula (1), a photoacid generator containing the sulfonium salt, and the like.

Abstract: A substrate with a film for a reflective mask blank including a substrate, a multilayer reflection film and a back surface conductive film having a composition at the side in contact with the substrate and a different composition at the side remotest from the substrate is provided. The composition at the side in contact with the substrate contains silicon and nitrogen, as main components, and the different composition at the side remotest from the substrate contains tantalum, as a main component, and at least one element selected from the group consisting of silicon, germanium and aluminum.

Abstract: A pellicle for an EUV photo mask includes a base membrane layer, a core layer disposed over the base membrane layer and one or more metallic layers disposed over the core layer.

Abstract: A method for forming a device structure is disclosed. The method of forming a device structure includes forming a variable-depth structure in a device material layer using a laser ablation. A plurality of device structures is formed in the variable-depth structure to define slanted device structures therein. The variable-depth structure and the slanted device structures are formed using an etch process.

Abstract: To provide a hologram recording composition that can further improve diffraction characteristics and transparency of a hologram. The present technology provides a hologram recording composition containing a heteropoly acid, a photopolymerizable monomer, a photopolymerization initiator, and a sensitizing dye having absorption in a visible light region in the presence of an acid. The present technology also provides a hologram recording medium including at least a photocurable resin layer containing a heteropoly acid, a photopolymerizable monomer, a photopolymerization initiator, and a sensitizing dye having absorption in a visible light region in the presence of an acid. Furthermore, the present technology also provides a diffraction optical element using the hologram recording medium. Moreover, the present technology also provides an optical device, an optical component, and an image display device using the diffraction optical element.

Abstract: A method of forming an imprint template. A hard mask layer is formed at a first side first side of a template plate. An imprint lithography is performed to form a patterned hard mask covering the first region, the patterned hard mask having a pattern portion and an edge portion defined in the same imprint lithography. The template plate is dry etched with the first region of the template plate covered with the patterned hard mask. An additional mask layer is formed on the patterned hard mask. A wet etch process is performed with both the patterned hard mask and the additional mask layer formed on the template plate to form a mesa under the pattern portion with the edge portion of the hard mask overhanging on the second region of the template plate.

Abstract: One example of a flow cell includes a base support and a multi-layer stack positioned over the base support. The multi-layer stack includes a resin layer positioned over the base support; and a hydrophobic layer positioned over the resin layer. A depression is defined in the multi-layer stack through the hydrophobic material and through a portion of the resin.

Abstract: A laminate includes: a near infrared light absorbing layer that includes a near infrared absorbing colorant; and a color filter layer that is arranged adjacent to the near infrared light absorbing layer in a thickness direction and includes a chromatic colorant, in which in at least one of the near infrared light absorbing layer or the color filter layer, a content of a compound in which an acid group selected from a sulfo group, a phosphate group, or a carboxyl group is bonded to a colorant skeleton is 0.1 to 99.9 mass % with respect to a total mass of compounds having a colorant skeleton.

Abstract: A resist underlayer film-forming composition has high solubility in a solvent used at a lithography process for exhibiting good coating film forming properties and able to decrease a sublime generated during formation of a film. A resist underlayer film-forming composition having a novolac resin having a structure group (C) obtained by a reaction of an aromatic ring structure of an aromatic ring-containing compound (A) with a vinyl group of an aromatic vinyl compound (B). The aromatic vinyl compound (B) is represented by Formula (1), and is specifically styrene, 2-vinylnaphthalene, 4-tert-butylstyrene, or 4-tert-butoxystyrene. The structure group (C) is represented by Formula (2). The aromatic ring-containing compound (A) is an aromatic amine compound or a phenolic hydroxy group-containing compound. The novolac resin is a resin produced by a reaction of the aromatic amine compound or the phenolic hydroxy group-containing compound with aldehyde or ketone.

Abstract: The present invention, in one aspect, relates to monomers and photopolymers that exhibit a high refractive index. The photopolymers of the invention have properties suitable for fabricating holographic optical elements (HOEs).

Abstract: A method includes holding a mask using an electrostatic chuck. The mask includes a substrate having a first bump and a second bump separated from the first bump and a patterned layer. The first bump and the second bump face the electrostatic chuck. The substrate is between the patterned layer and the electrostatic chuck. The first bump and the second bump are spaced apart from the patterned layer. The first bump and the second bump are ring strips in a top view, and the first bump has a rectangular cross section and the second bump has a triangular cross section. The method further includes generating extreme ultraviolet (EUV) radiation using an EUV light source; and directing the EUV radiation toward the mask, such that the EUV radiation is reflected by the mask.

Abstract: A method for producing a composition, the method being for producing a composition using a stirring device provided with a stirring tank and a stirrer, includes a mixing step of charging a resin, an acid generator, and a solvent into the stirring tank, and a stirring step of stirring the mixture accommodated in the stirring tank, using the stirrer, in which a ratio c of a content of the acid generator to a total mass of the mixture is 0.3% to 2.5% by mass, the stirrer is provided with a rotatable stirring shaft, a plurality of support parts attached to the stirring shaft, and a plurality of stirring elements attached to each of end parts of the plurality of support parts, the shape and the arrangement of the stirring elements are specified, and the positions of the plurality of stirring elements are specified so as to satisfy a specific Expression (1).

Abstract: Proposed are an organic-inorganic hybrid photoresist processing solution composition for use in a thin film formation process, a development process, and a stripping process of an organic-inorganic hybrid photoresist, and a processing method using the same. The processing solution composition includes a compound of Chemical Formula 1 and a ketone, an ester, an ether, an additive or a mixture thereof, and is superior in processing of organic materials and ability to adsorb inorganic materials, thereby minimizing the remaining inorganic material content, ultimately preventing processing defects from occurring.

Abstract: A coloring composition contains a halogenated zinc phthalocyanine pigment A, an isoindoline pigment B, a resin C, and a curable compound D having an ethylenically unsaturated bonding group, in which the resin C includes a resin Cl having a repeating unit formed by polymerizing a polymerizable compound Cm having a CLogP value of 3.0 or more with the CLogP value being a calculated value of a LogP which is the common logarithm of a partition coefficient P of 1-octanol/water, and having a cyclic structure in a molecule thereof, and the ratio of the mass of the halogenated zinc phthalocyanine pigment A to the mass of the isoindoline pigment B is 55:45 to 85:15 in terms of the mass of the halogenated zinc phthalocyanine pigment A:the mass of the isoindoline pigment B.

Abstract: A resist underlayer film material used in multilayer resist method contains (A) compound shown by following general formula (1), and (B) organic solvent, where X independently represents monovalent organic group shown by following general formula (2); W contains an “m” number of partial structures each independently shown by following formula (3); “m” and “n” each represent an integer of 1 to 10; broken lines represent bonding arms; Z represents aromatic group; A represents single bond or —O—(CH2)p—; “k” represents integer of 1 to 5; “p” represents integer of 1 to 10; R01 represents hydrogen atom or monovalent organic group having 1 to 10 carbon atoms. Material is capable of forming resist underlayer film excellent in planarizing property in fine patterning process by multilayer resist method in semiconductor-device manufacturing process; and patterning processes and methods for forming resist underlayer film use material.