Abstract: In a photomask blank including a transparent substrate and a first inorganic film containing either or both of a transition metal and silicon, and optional a second inorganic film containing either or both of a transition metal and silicon, when an intensity of secondary ions is measured in the thickness direction of the transparent substrate and the inorganic films by TOF-SIMS with using a primary ion source of Bi and a sputtering ion source of Cs, an intensity of secondary ions containing carbon detected at the interface of the transparent substrate and the inorganic film or the inorganic films is higher than both intensities of the secondary ions containing carbon detected, respectively, at the sides remote from the interface.

Abstract: Organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that comprise that comprise a surface agent of the Formula (I). where A and B are each independently hydrogen, optionally substituted alkyl or optionally substituted aryl; X and Y are each independently hydrogen, optionally substituted alkyl or optionally substituted carbocyclic aryl; and n is a positive integer. Preferred coating compositions can provide improved pattern collapse margin of an overcoated photoresist layer.

Abstract: A method for manufacturing a reticle is provided. The method includes forming a first reflective multilayer over a mask substrate. The method also includes forming a capping layer over the first reflective ML. The method further includes depositing a first absorption layer over the capping layer. In addition, the method includes depositing an etch stop layer over the first absorption layer. The method also includes forming a second reflective multilayer (ML) over the etch stop layer. The method further includes forming a second absorption layer over the second reflective ML. In addition, the method includes forming an opening through the second absorption layer and the second reflective ML until the etch stop layer is exposed. The method also includes etching the etch stop layer and the first absorption layer through the opening until the capping layer is exposed.

Abstract: The present application relates to a method for producing a substrate which includes a step of exposing and developing a photosensitive resin composition layer formed on a surface of a substrate base layer to produce spacers. The method for producing a substrate of the present application can uniformly form spacers having a height according to a desired cell gap and can also freely control the height of the spacers.

Abstract: A method of manufacturing a reticle includes depositing an etch stop layer over a substrate; and depositing an absorber layer over the etch stop layer. The method further includes depositing a hard mask layer over the absorber layer, wherein the hard mask layer includes tantalum. The method includes patterning the hard mask layer. The method further includes performing a first etch process to remove a portion of the absorber layer underneath the patterned hard mask. The method includes performing a second etch process to partially remove a portion of a thickness of an etch stop layer underneath the removed portion of the absorber layer, wherein performing the third etch process comprises maintaining a remaining thickness of the etch stop layer underneath the removed portion of the absorber. The method further includes maintaining the remaining thickness of the etch stop layer through a termination of the method of manufacturing the reticle.

Abstract: Techniques disclosed herein relate to holographic optical materials and elements. An example of a holographic recording material includes matrix monomers characterized by a first refractive index and configured to polymerize to form a polymer matrix, writing monomers dispersed in the matrix monomers and characterized by a second refractive index different from the first refractive index, and a photocatalyst for controlled radical polymerization of the writing monomers. The writing monomers are configured to polymerize upon exposed to recording light. The photocatalyst is dispersed in the matrix monomers. The photocatalyst includes, for example, a transition metal photocatalyst or a metal-free organic photocatalyst, such as a photocatalyst for atom transfer radical polymerization or a transition metal photocatalyst for addition fragmentation chain transfer polymerization.

Abstract: A resist underlayer film for lithography does not cause intermixing with a resist layer, has high dry etching resistance and high heat resistance, and generates a low amount of sublimate. A resist underlayer film-forming composition containing a polymer having a unit structure of the following formula (1): wherein A is a divalent group having at least two amino groups, the group is derived from a compound having a condensed ring structure and an aromatic group for substituting a hydrogen atom on the condensed ring, and B1 and B2 are each independently a hydrogen atom, an alkyl group, a benzene ring group, a condensed ring group, or a combination thereof, or B1 and B2 optionally form a ring with a carbon atom bonded to B1 and B2.

Abstract: The disclosure provides recording materials include fluorene derivatized monomers and polymers for use in volume Bragg gratings, including, but not limited to, volume Bragg gratings for holography applications. Several fluorene structures are disclosed: simply substituted fluorenes, cardo-fluorenes, and spiro-fluorenes. Fluorene derivatized polymers in Bragg gratings applications lead to materials with higher refractive index, low birefringence, and high transparency. Fluorene derivatized monomers/polymers can be used in any volume Bragg gratings materials, including two-stage polymer materials where a matrix is cured in a first step, and then the volume Bragg grating is written by way of a second curing step of a monomer.

Abstract: A method of testing a photomask assembly includes placing the photomask assembly into a chamber, wherein the photomask assembly includes a pellicle attached to a first side of a photomask. The method further includes exposing the photomask assembly to a radiation source having a wavelength ranging from about 160 nm to 180 nm in the chamber to accelerate haze development, wherein the exposing of the photomask assembly includes illuminating an entirety of an area of the photomask covered by the pellicle throughout an entire illumination time and illuminating a frame adhesive attaching the pellicle to the photomask. The method further includes detecting haze of the photomask following exposing the photomask assembly to the radiation source. The method further includes predicting performance of the photomask assembly during a manufacturing process based on the detected haze of the photomask following exposing the photomask assembly to the radiation source.

Abstract: A reflective mask blank includes, on/above a substrate in the following order from the substrate side a multilayer reflective film which reflects EUV light and an absorber film which absorbs EUV light. The absorber film is a tantalum-based material film containing a tantalum-based material. The absorber film provides a peak derived from the tantalum-based material in an X-ray diffraction pattern, the peak having a peak diffraction angle (2?) of 36.8 degrees or more and a full width at half maximum of 1.5 degrees or more.

Abstract: The invention relates a method for producing a radiation-emitting component including a step A, in which a laser having an optical resonator and an output mirror is provided, wherein during the intended operation, laser radiation exits the optical resonator via the output mirror. In a step B), a photoresist layer is applied to the output mirror. In a step C), an optical structure is generated from the photoresist layer by means of a 3D lithography method, wherein the optical structure is designed to influence the beam path of the laser radiation by refraction and/or reflection.

Abstract: The present specification provides a compound, a photoresist composition comprising the same, a photoresist pattern comprising the same, and a method for preparing a photoresist pattern.

Abstract: A photo-mask and a semiconductor process are provided. The photo-mask includes a substrate and a non-printable pattern on the substrate. A pattern size of the non-printable pattern is smaller than a critical resolution of a lithography equipment using the photo-mask to perform a lithography process.

Abstract: A method for forming a device structure is disclosed. The method of forming a device structure includes forming a variable-depth structure in a device material layer using a laser ablation. A plurality of device structures is formed in the variable-depth structure to define slanted device structures therein. The variable-depth structure and the slanted device structures are formed using an etch process.

Abstract: A resist underlayer film for lithography has high solubility in a resist solvent (solvent used in lithography) for expressing good coating film forming property and a smaller selection ratio of dry etching rate as compared with a resist. A resist underlayer film-forming composition containing a novolac resin containing a structure (C) obtained by a reaction of an aromatic ring of an aromatic compound (A) with a hydroxy group-containing aromatic methylol compound (B). The aromatic compound (A) may be a component constituting the structure (C) in the novolac resin. The hydroxy group-containing aromatic methylol compound (B) may be a compound of Formula (1): The hydroxy group-containing aromatic methylol compound (B) may be 2-hydroxybenzyl alcohol, 4-hydroxybenzyl alcohol, or 2,6-di-tert-butyl-4-hydroxymethyl phenol.

Abstract: A halftone phase shift-type photomask blank including a transparent substrate, and a halftone phase shift film formed on the substrate, and including at least one layer composed of silicon, nitrogen and oxygen is provided. The halftone phase shift film has a phase shift of at least 150° and up to 200° and a transmittance of at least 20%, with respect to exposure light having a wavelength of up to 200 nm, and a film surface having a surface roughness RMS of up to 0.8 nm, and an in-plane variation of transmittance calculated from the maximum transmittance Tmax and the minimum transmittance Tmin within a mask pattern forming area by the expression: (Tmax?Tmin)/(Tmax+Tmin)×100 is up to 2%.

Abstract: The present application discloses a display panel, a manufacturing method of a display panel and a mask used thereof. The manufacturing method of the display panel comprises the following steps: doping a photo-initiator in photoresist for manufacturing photo spacers; coating the photoresist on the substrates to form photo spacers, and arranging a shade on the same layer; and respectively irradiating corresponding photo spacers by at least two types of light rays of different wavelengths, to control the photo-initiator so as to enable different photo spacers to have different shrinkages.

Abstract: A resist composition comprising a base polymer and an acid generator containing a sulfonium or iodonium salt of iodized benzamide group-containing fluorinated sulfonic acid offers a high sensitivity, minimal LWR and improved CDU independent of whether it is of positive or negative tone.

Abstract: A colored resin composition containing an alkali-soluble resin (A), a colorant (B), an organic solvent (C), and a photosensitizer (D), the colored resin composition containing at least a zirconia compound particle as the colorant (B), wherein the zirconia compound particle contains zirconium nitride having a crystallite size of 10 nm or more and 60 nm or less, and the crystallite size is determined from a half width of a peak derived from a (111) plane in an X-ray diffraction spectrum using a CuK? ray as an X-ray source. The present invention provides a highly sensitive colored resin composition by improving light transmissivity in the ultraviolet region (wavelength 365 nm) generally used in photolithography and by improving a light shielding property in the visible region.

Abstract: The present invention is directed to a permanent photoimageable compositions and the cured products thereof useful for making negative-tone, permanent photoresist relief patterns on low surface energy polymer substrates, comprising: (A) one or more alkali soluble, film forming resins or one or more film forming resins that become soluble in alkali solutions by action of an acid, (B) one or more cationic photoinitiators, (C) one or more film casting solvents, and (D) one or more fluorinated compounds. The present invention is also directed to methods of forming a permanent photoresist relief pattern on a low surface energy polymer substrate using the disclosed compositions.