Patents Examined by Maureen Gramaglia
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Patent number: 8808453Abstract: A system for abating a simultaneous flow of silane and arsine contained in an exhaust gas of DRAM processing chamber. The system includes a CVD abatement apparatus and a resin-type adsorber. The CVD abatement apparatus comprises an enclosure that defines a chamber for receiving the exhaust gas. The enclosure contains a plurality of removable substrates arranged as a series of baffles inside the enclosure. As the exhaust gas flows through the CVD abatement apparatus, the silicon within the silane is deposited as a film upon the substrates by chemical vapor deposition. The arsine continues to flow through the CVD apparatus to the adsorber where it is adsorbed by the resin contained therein. After the film has reached a particular thickness, the substrates can be removed from the enclosure, cleaned of the film and returned to the enclosure for further use.Type: GrantFiled: April 19, 2007Date of Patent: August 19, 2014Assignee: International Business Machines CorporationInventor: Kurt A. Carlsen
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Patent number: 8789493Abstract: An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing having a backing member having a bonding surface, an inner electrode having a lower surface on one side and a bonding surface on the other side, and an outer electrode having a lower surface on one side and a bonding surface on the other side. At least one of the electrodes has a flange, which extends underneath at least a portion of the lower surface of the other electrode.Type: GrantFiled: February 13, 2006Date of Patent: July 29, 2014Assignee: Lam Research CorporationInventors: Daxing Ren, Enrico Magni, Eric Lenz, Ren Zhou
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Patent number: 8784565Abstract: The present invention relates to a manufacturing apparatus for deposition of a material on a carrier body and an electrode for use with the manufacturing apparatus. Typically, the carrier body has a first end and a second end spaced from each other. A socket is disposed at each of the end of the carrier body. The manufacturing apparatus includes a housing that defines a chamber. At least one electrode is disposed through the housing with the electrode at least partially disposed within the chamber for coupling to the socket. The electrode has an exterior surface having a contact region that is adapted to contact the socket. A contact region coating is disposed on the contact region of the exterior surface of the electrode. The contact region coating has an electrical conductivity of at least 9×106 Siemens/meter and a corrosion resistance that is higher than silver in a galvanic series that is based upon room temperature sea water as an electrolyte.Type: GrantFiled: April 13, 2009Date of Patent: July 22, 2014Assignee: Hemlock Semiconductor CorporationInventors: David Hillabrand, Theodore Knapp
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Patent number: 8771423Abstract: Embodiments of a cover ring for use in a plasma processing chamber are provided. In one embodiment, a cover ring for use in a plasma processing chamber includes a ring-shaped body fabricated from a yttrium (Y) containing material. The body includes a bottom surface having an inner locating ring and an outer locating ring. The inner locating ring extends further from the body than the outer locating ring. The body includes an inner diameter wall having a main wall and a secondary wall separated by a substantially horizontal land. The body also includes a top surface having an outer sloped top surface meeting an inner sloped surface at an apex. The inner sloped surface defines an angle with a line perpendicular to a centerline of the body less than about 70 degrees.Type: GrantFiled: October 11, 2012Date of Patent: July 8, 2014Assignee: Applied Materials, Inc.Inventors: Changhun Lee, Michael D. Willwerth, Hoan Nguyen
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Patent number: 8770142Abstract: A plasma generator may include a first electrode extending in one direction, and a second electrode spaced apart from the first electrode. Facing surfaces of the first electrode and the second electrode may have spiral shapes along the one direction. A cross-section of the first electrode and a cross-section of the second electrode, which are perpendicular to the one direction, may have at least partially concentric shapes. An electrode for generating plasma may include a platform extending in one direction, and at least one protruding thread spirally formed on a surface of the platform along the one direction.Type: GrantFiled: September 16, 2009Date of Patent: July 8, 2014Assignee: Veeco ALD Inc.Inventor: Sang In Lee
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Patent number: 8746172Abstract: The present invention refers to an apparatus for the plasma treatment of hollow bodies, comprising a vacuum treatment chamber and means for generating the plasma, which apparatus is characterized in that the means for generating the plasma comprise an electrode of a substantially U-shaped cross-section, which is arranged in the vacuum treatment chamber, the hollow bodies immersing at least in part into the U-shaped electrode when the plasma treatment is carried out, and being moved at least temporarily relative to the U-shaped electrode.Type: GrantFiled: July 31, 2009Date of Patent: June 10, 2014Assignee: Krones AGInventors: Jochen Krueger, John Felts
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Patent number: 8747560Abstract: A pedestal positioning assembly system for use in a substrate processing system includes a pedestal rigidly attached to a pedestal shaft, a reference rigidly attached to the substrate processing system, a lateral adjustment assembly to adjust a lateral location of the pedestal relative to the reference, and a vertical adjustment assembly to adjust a tilt of the pedestal relative to the reference. The lateral adjustment assembly and the vertical adjustment assembly are external to a processing chamber and are coupled to the pedestal disposed within the processing chamber through the pedestal shaft. The reference can be a ring and the lateral adjustment assembly substantially centers the pedestal within the ring. A method of adjusting a pedestal includes leveling the pedestal, translating the pedestal, calibrating the pedestal height to a preheat ring level, and checking the level and location of the pedestal while rotating the pedestal.Type: GrantFiled: February 13, 2013Date of Patent: June 10, 2014Assignee: Applied Materials, Inc.Inventors: Richard Collins, Kailash Kiran Patalay, Jean Vatus, Zhepeng Cong
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Patent number: 8741065Abstract: A substrate processing apparatus includes a substrate stage for mounting two or more substrates thereon. The substrate stage includes substrate stage units. Each of the substrate stage units includes a central temperature control flow path for controlling the temperature of a central portion of each of the substrates and a peripheral temperature control flow path for controlling the temperature of a peripheral portion of each of the substrates. The central temperature control flow path and the peripheral temperature control flow path are formed independently of each other. The substrate stage includes one temperature control medium inlet port for introducing therethrough a temperature control medium into the peripheral temperature control flow path and temperature control medium outlet ports for discharging therethrough the temperature control medium from the peripheral temperature control flow path. The number of the temperature control medium outlet ports corresponds to the number of substrates.Type: GrantFiled: June 29, 2011Date of Patent: June 3, 2014Assignee: Tokyo Electron LimitedInventors: Masaya Odagiri, Yusuke Muraki, Jin Fujihara
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Patent number: 8741098Abstract: Disclosed herein is a table 2 for use in a plasma processing system 1 that includes an electrically conductive member serving as a lower electrode 21 for plasma formation, a lower dielectric layer 22 (first dielectric layer) formed on the electrically conductive member so that it covers the center of the upper surface of the electrically conductive member, serving to make a high-frequency electric field to be applied to plasma via a substrate uniform, and an upper dielectric layer 24 (second dielectric layer) having a relative dielectric constant of 100 or more, formed on the electrically conductive member so that it is in contact at least with the edge of the substrate, in order to prevent a high-frequency current that has propagated along the electrically conductive member face from leaking to the outside of the substrate (wafer W).Type: GrantFiled: August 10, 2007Date of Patent: June 3, 2014Assignee: Tokyo Electron LimitedInventors: Akira Koshiishi, Shinji Himori, Shoichiro Matsuyama
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Patent number: 8733279Abstract: The present invention generally comprises a backing plate reinforcement apparatus for use in a plasma enhanced chemical vapor deposition apparatus. When processing large area substrates, the backing plate extending across the chamber may also be quite large. By supporting a central area of the backing plate with a frame structure, the backing plate may be maintained substantially planar. Alternatively, as necessary, the contour of the backing plate may be adjusted to suit the particular needs of the process.Type: GrantFiled: February 26, 2008Date of Patent: May 27, 2014Assignee: Applied Materials, Inc.Inventors: John M. White, Shinichi Kurita, Robin L. Tiner
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Patent number: 8702903Abstract: A thermally conductive sheet is used between a mounting table for mounting thereon a target substrate and an annular focus ring mounted on the mounting table to surround a circumferential peripheral portion of the target substrate. Further, the mounting table includes therein a cooling unit and is disposed in a depressurized accommodating chamber for accommodating therein the target substrate. The thermally conductive sheet has a non-adhesive layer on each of one or more surfaces thereof.Type: GrantFiled: March 26, 2008Date of Patent: April 22, 2014Assignee: Tokyo Electron LimitedInventors: Masaaki Miyagawa, Akihiro Yoshimura
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Patent number: 8696862Abstract: A substrate mounting table is disposed in a processing chamber for performing a plasma process on a substrate and includes at least one power feed part formed of an insulating material surrounding a power feed line and a cooling medium path. The substrate mounting table further includes a protrusion portion for dividing a space formed on a substrate mounting surface of the mounting table into regions, inlet ports through which cooling gases are introduced into the regions divided by the protrusion portion, and a controller for controlling pressures or flow rates of the cooling gases.Type: GrantFiled: February 5, 2009Date of Patent: April 15, 2014Assignee: Tokyo Electron LimitedInventor: Yasuharu Sasaki
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Patent number: 8691047Abstract: A plasma processing system having at-electrode RF matching and a method for processing substrates utilizing the same is provided. In one embodiment, the plasma processing system includes a chamber body, the substrate support, an electrode, a lid assembly and an RF tuning element. A substrate support is disposed in a processing volume defined in the chamber body. The electrode is positioned above the substrate support and below a cover of the lid assembly. The RF tuning element is disposed between the cover and the electrode and is coupled to the electrode.Type: GrantFiled: November 17, 2010Date of Patent: April 8, 2014Assignee: Applied Materials, Inc.Inventors: Carl A. Sorensen, John M. White, Jozef Kudela
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Patent number: 8679288Abstract: Showerhead electrode assemblies are disclosed, which include a showerhead electrode adapted to be mounted in an interior of a vacuum chamber; an optional backing plate attached to the showerhead electrode; a thermal control plate attached to the backing plate or to the showerhead electrode at multiple contact regions across the backing plate; and at least one interface member separating the backing plate and the thermal control plate, or the thermal control plate and showerhead electrode, at the contact regions, the interface member having a thermally and electrically conductive gasket portion and a particle mitigating seal portion. Methods of processing semiconductor substrates using the showerhead electrode assemblies are also disclosed.Type: GrantFiled: June 9, 2008Date of Patent: March 25, 2014Assignee: Lam Research CorporationInventors: Tom Stevenson, Rajinder Dhindsa
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Patent number: 8671882Abstract: A plasma processing apparatus capable of, over a prolonged period of time, controlling a decrease in the value of a DC current flowing within an accommodating compartment. The plasma processing apparatus comprises an accommodating compartment adapted to accommodate a substrate and perform a plasma treatment thereon, a high-frequency power source adapted to supply high-frequency power to the inside of the accommodating compartment; a DC electrode adapted to apply a DC voltage to the inside of the accommodating compartment, a ground electrode provided within the accommodating compartment and used for the applied DC voltage, and an exhaust unit adapted to evacuate the inside of the accommodating compartment.Type: GrantFiled: March 24, 2008Date of Patent: March 18, 2014Assignee: Tokyo Electron LimitedInventor: Masanobu Honda
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Patent number: 8668805Abstract: A semiconductor device may be formed by the method comprising providing a patterned photoresist mask over the etch layer, the photoresist mask having at least one photoresist line having a pair of sidewalls ending at a line end, placing a coating over the at least one photoresist line comprising at least one cycle, wherein each cycle comprises: a) depositing a polymer layer over the photoresist line, wherein an amount of polymer at the line end is greater than an amount of polymer on the sidewalls, and b) hardening the polymer layer, and etching features into the etch layer through the photoresist mask, wherein a line end shortening (LES) is less than or equal to 1.Type: GrantFiled: June 30, 2008Date of Patent: March 11, 2014Assignee: Lam Research CorporationInventors: Gowri Kota, Frank Y. Lin, Qinghua Zhong
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Patent number: 8652260Abstract: Apparatus for holding semiconductor wafers during semiconductor manufacturing processes are disclosed. In one embodiment, the apparatus comprises a heat-conductive layer disposed on a supporting base. The apparatus also comprises a plurality of holes formed through the heat-conductive layer and the supporting base. The apparatus further comprises a plurality of heat-conductive lift pins that extend through the holes over the heat-conductive layer at the top end, and make a direct contact with a wafer substrate. The heat-conductive layer and the lift pins are connected to a heating circuit.Type: GrantFiled: December 31, 2008Date of Patent: February 18, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-Hua Yu, Chien Ling Hwang
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Patent number: 8641826Abstract: An alignment tool is used to ensure proper alignment of a component on a rotating gear relative to a non-rotating platter. The alignment tool includes a first arm member coupled to a locating feature on the gear, and a second arm member that is coupled to the first arm member such that the second arm member is movable relative to the first arm member. When the first arm member is coupled to the locating feature, the second arm member locates off the platter to verify proper alignment. The second arm member is cannot be fitted to the platter when there is improper alignment.Type: GrantFiled: May 31, 2012Date of Patent: February 4, 2014Assignee: United Technologies CorporationInventor: James S. Rosenblatt
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Patent number: 8641825Abstract: A substrate temperature regulation fixed apparatus has a base substance on which a vacuumed object is placed, an adhesive layer and a base plate. The base substance is fixed on the base plate through the adhesive layer. The adhesive layer contains a substance having plasma resistance.Type: GrantFiled: June 11, 2009Date of Patent: February 4, 2014Assignee: Shinko Electric Industries Co., Ltd.Inventors: Hiroshi Yonekura, Miki Saito, Koki Tamagawa
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Patent number: 8635971Abstract: A method of tuning the uniformity of a plasma with a large sheath potential by locally affecting the density of a plasma is provided. The method comprises illuminating a body exposed to the plasma with electromagnetic radiation from a source, wherein the body and the source are cooperatively configured such that the body will generate photoelectrons upon exposure to the radiation from the source. An example of such electromagnetic radiation is vacuum ultraviolet light, and an example of such a body is the edge ring surrounding a semiconductor substrate. Photoelectrons emitted from the edge ring, captured by the plasma, and accelerated into the plasma with sufficient energy to cause ionization, locally increase plasma density. The source of radiation can be a plurality of discrete sources or one or more extended sources.Type: GrantFiled: March 31, 2006Date of Patent: January 28, 2014Assignee: Lam Research CorporationInventor: Eric Hudson