Abstract: A plasma processing apparatus includes a first electrode and a second electrode so arranged in the upper portion of a processing chamber as to face a mounting table, a gas supply unit for supplying a processing gas between the first electrode and the second electrode, a RF power supply unit for applying a RF power between the first electrode and the second electrode for converting the process gas supplied between the electrodes into a plasma, and a gas exhaust unit for evacuating the inside of the processing chamber to a vacuum level from the lower portion of the processing chamber. Since the electron temperature in the plasma is low near a substrate on the mounting table, damage to the substrate caused by the plasma can be suppressed. In addition, since a metal can be used as a material for the processing chamber, the processing chamber can have good temperature controllability.

Abstract: A structure, for use in a processing chamber of a plasma processing apparatus in which a plasma process is performed on a target substrate, includes a base member at least having a first surface and a second surface; and a thermally sprayed insulating film covering the first surface. Further, the structure includes an insulating protection member covering the second surface and made of a material having a linear expansion coefficient different from that of the base member; and an insulating layer interposed between the thermally sprayed insulating film and the insulating protection member to prevent a contact therebetween. The thermally sprayed insulating film, the insulating protection member and the insulating layer constitute an insulating surface covering the first surface and the second surface.

Abstract: A plasma processing unit of the present invention includes a processing container whose inner pressure can be reduced, a first electrode arranged in the processing container, a process gas supplying unit that supplies a process gas into the processing container, a high-frequency electric power source that outputs high-frequency electric power having a frequency in a VHF band, a matching unit electrically connected to the high-frequency electric power source and the first electrode for impedance matching, and a transmission line that transmits the high-frequency electric power from the high-frequency electric power source to the matching unit. A substrate to be processed is adapted to be arranged in the processing container. The high-frequency electric power transmitted to the first electrode is adapted to generate plasma in such a manner that the substrate to be processed can undergo a plasma process by means of the plasma.

Abstract: An apparatus for manufacturing a large-area carbon nanotube film includes a reactor chamber, a helical-shaped substrate, and a supporter. The reactor chamber includes an inlet and an outlet. The inlet and the outlet are aligned on an axis of the reactor chamber. The helical-shaped substrate and the supporter are located wholly inside the reactor chamber. The supporter is moveable along the axis of the reactor chamber, and the helical-shaped substrate is supported by the supporter.

Abstract: In an in-liquid plasma film-forming apparatus having: a vessel 1 being capable of accommodating a substrate “S” and a liquid “L” including raw material therein; an electrode 2 for in-liquid plasma, electrode 2 which is disposed in the vessel 1; an electric power device 3 for supplying electricity to the electrode 2 for in-liquid plasma; the electrode 2 for in-liquid plasma is equipped with: a main electrode 21 having a discharging end 22; an auxiliary electrode 26 not only facing the discharging end 22 but also being disposed between the discharging end 22 and the substrate “S” that face each other; and a plasma generating unit 29 having a space that is demarcated by a surface 22a of the discharging end 22 and a surface 26a of the auxiliary electrode 26 facing the surface 22a, and being for generating plasma by means of electricity being supplied to the main electrode 21.

Abstract: A lift pin driving device and a manufacturing apparatus having the device are provided. The device includes drive unit including a single drive motor that drives a pin plate, a plurality of timing belts and a plurality of pulleys. The pin plate, which supports a plurality of lift pins thereon, is moved by the pulleys, operated in conjunction with the motor through the timing belts. A tensioner controls a tension of the timing belts. The tensioner may be controlled to provide precise rectilinear movement without leaning, and to prevent the timing belts from sagging. The device efficiently controls the tension of the timing belts and allows the lift pins to be precisely moved upwards or downwards such that a substrate positioned thereon may maintain a horizontal position while being moved upwards or downwards.

Abstract: A system and method for evenly heating a substrate placed in a wafer carrier used in wafer treatment systems such as chemical vapor deposition reactors, wherein a first pattern of wafer compartments is provided on the top of the wafer carrier, such as one or more rings of wafer carriers, and a second pattern of inlaid material dissimilar to the wafer carrier material is inlaid on the bottom of the wafer carrier, and the second pattern of inlaid material is substantially the opposite of the first pattern of wafer compartments, such that there are at least as many material interfaces in intermediate regions without wafer compartments as there are in wafer carrying regions with wafers and wafer compartments.

Abstract: Metal corrosion and substrate contamination can be suppressed, and process quality and yield can be improved. A substrate processing apparatus comprises: a process chamber; a substrate holder; a cover part closing and opening the process chamber; a substrate holder stage; a rotary mechanism rotating the substrate holder stage; a rotation shaft inserted through the cover part and connected to the substrate holder stage and the rotary mechanism so that a first gas ejection port is formed therebetween; a first gas stagnant part surrounded by the rotary mechanism, the cover part, and the rotation shaft; a second gas ejection port formed at the substrate holder stage; a second gas stagnant part formed at the rotation shaft and communicating with the process chamber via the second gas ejection port; and a flow port formed at the rotation shaft for connecting the first and second gas stagnant parts.

Abstract: A method and system of for introducing an active material to a chemical process in which a processing element including a passive component and an active element is installed within the system and exposed to a chemical process performed within the system. As the chemical process proceeds, the passive component erodes and thereby exposes the active component embedded therein. The introduction of the active component to the chemical process alters the chemical process.

Abstract: A shadow mask, a method of manufacturing the shadow mask, and a method of forming a thin film using the shadow mask are provided. The shadow mask includes an upper layer and a lower layer. The upper layer includes a first opening. The lower layer is formed on a lower surface of the upper layer around the first opening and includes an opening having the same size as the first opening. When the thin film is formed using the shadow mask, the lower layer of the shadow mask is close to the edge of a cavity of a substrate, and a position on which the thin film may be formed as defined by the lower layer of the shadow mask. Therefore, the thickness of the thin film can be uniform.

Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.

Abstract: A plasma processing apparatus for processing a substrate using plasma includes a first electrode configured to mount the substrate, a second electrode disposed to face the first electrode with a predetermined space, a chamber containing the first electrode and the second electrode, the chamber being capable of adjusting an inside atmosphere, a first electric power source device configured to apply a first RF voltage for controlling a self-bias voltage generated on the substrate to the first electrode, the first electric power source device applying a substantially constant width and a substantially constant value in a peak-to-peak voltage of an RF voltage of a first frequency at intervals, and a second electric power source device configured to apply a second RF voltage of a second frequency for generating plasma between the first and second electrodes to one of the first electrode and the second electrode.

Abstract: A plasma processing apparatus for generating a plasma in a plasma processing space in a processing chamber and plasma-processing a target object includes a plasma-exciting high frequency power supply for applying a plasma-exciting high frequency power. Further, the plasma processing apparatus includes at least one of a potential-controlling high frequency power supply for applying a potential-controlling high frequency power having a frequency lower than that of the plasma-exciting high frequency power and a DC power supply for applying a DC voltage; and a mounting table for mounting thereon a target object. Furthermore, the plasma processing apparatus includes an auxiliary electrode, provided at a position outer side of the target object mounted on the mounting table while facing the mounting table, connected to at least one of the potential-controlling high frequency power supply and the DC power supply.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus comprises a reaction vessel configured to process a substrate, and a heating device. The heating device comprises at least one sidewall insulating part surrounding the reaction vessel, a ceiling insulating part placed on the sidewall insulating part and comprising a plurality of stress relief grooves, and a heating element installed at an inner side of the sidewall insulating part.

Abstract: In a plasma processing apparatus including a vacuum-evacuable processing chamber, a first lower electrode for supporting a substrate to be processed thereon is disposed in the processing chamber and an upper electrode is disposed above the first lower electrode to face the first lower electrode. Further, a second lower electrode is disposed under the first lower electrode while being electrically isolated from the first lower electrode. A processing gas supply unit supplies a processing gas into a space between the upper electrode and the first lower electrode. A first high frequency power supply unit applies a first high frequency power of a first frequency to the first lower electrode, and a second high frequency power supply unit applies a second high frequency power of a second frequency higher than the first frequency to the second lower electrode.

Abstract: The present disclosure provides methods and systems for controlling temperature. The method has particular utility in connection with controlling temperature in a deposition process, e.g., in depositing a heat-reflective material via CVD. One exemplary embodiment provides a method that involves monitoring a first temperature outside the deposition chamber and a second temperature inside the deposition chamber. An internal temperature in the deposition chamber can be increased in accordance with a ramp profile by (a) comparing a control temperature to a target temperature, and (b) selectively delivering heat to the deposition chamber in response to a result of the comparison. The target temperature may be determined in accordance with the ramp profile, but the control temperature in one implementation alternates between the first temperature and the second temperature.

Abstract: A method of fabricating a thin liquid crystal display device including a glass substrate having a flat surface. The method includes etching at least one surface of a liquid crystal display, panel, and grinding the surface of the liquid crystal display panel so as to planarize the etched liquid crystal display panel.

Abstract: A plasma processing apparatus includes a process container configured to accommodate a target substrate and to be vacuum-exhausted. A first electrode and a second electrode are disposed opposite each other within the process container. The first electrode includes an outer portion and an inner portion both facing the second electrode such that the outer portion surrounds the inner portion. An RF power supply is configured to apply an RF power to the outer portion of the first electrode. A DC power supply is configured to apply a DC voltage to the inner portion of the first electrode. A process gas supply unit is configured to supply a process gas into the process container, wherein plasma of the process gas is generated between the first electrode and the second electrode.

Abstract: An edge ring assembly surrounds a substrate support surface in a plasma etching chamber. The edge ring assembly comprises an edge ring and a dielectric spacer ring. The dielectric spacer ring, which surrounds the substrate support surface and which is surrounded by the edge ring in the radial direction, is configured to insulate the edge ring from the baseplate. Incorporation of the edge ring assembly around the substrate support surface can decrease the buildup of polymer at the underside and along the edge of a substrate and increase plasma etching uniformity of the substrate.

Abstract: The invention relates to a masking system for masking a cylinder bore (2) of a combustion engine (3) during a thermal coating procedure including a masking body (4) which can be placed during the thermal coating of a first cylinder (5) of the combustion engine (3) in the cylinder bore (2) of a second cylinder (7) to cover a cylinder wall (6) of the second cylinder (7). In this arrangement the masking body (4) is designed in such a way that a flow gap (10) of predeterminable breadth can be set between the masking body (4) and the cylinder wall (6) of the second cylinder (7) for the production of a flow (8) of a fluid (9).