Abstract: An apparatus for treating a substrate includes a processing container having an inner space; a support unit having a support plate configured to support and rotate the substrate in the inner space; a liquid supply unit configured to supply treating liquid to the substrate supported by the support unit; and an exhaust unit configured to exhaust an air flow in the inner space, wherein the exhaust unit includes an air flow guide duct guiding a flow direction of an air flow flowing on the substrate to an outer side of the substrate due to a rotation of the substrate supported by the support unit, and the air flow guide duct having an inlet into which an air flow is introduced, the inlet provided at a substantially same level with the substrate supported by the support unit.

Abstract: Methods of forming structures including a stress management layer for photolithography and structures including the stress management layer are disclosed. Further disclosed are systems for depositing a stress management layer. Exemplary methods include forming the stress management layer using one or more of plasma-enhanced cyclic (e.g., atomic layer) deposition and plasma-enhanced chemical vapor deposition.

Abstract: A substrate processing apparatus includes a processing chamber providing a processing space for processing a substrate and processing a substrate, a substrate support configured to support the substrate, a blocking plate below the substrate support and configured to prevent supercritical fluid from being directly sprayed onto the substrate, a first supply device configured to supply supercritical fluid under a first condition to the processing chamber, a second supply device configured to supply supercritical fluid under a second condition at a higher temperature than that of supercritical fluid under the first condition to the processing chamber, a discharge device configured to discharge supercritical fluid from the processing chamber, and a control device configured to control operations of the first supply device, the second supply device, and the discharge device. The control device is configured to direct the first supply device to supply supercritical fluid prior to the second supply device.

Abstract: A method for producing a protective buffer flow in an EUV light source and an EUV mask inspection apparatus are provided. The method includes directing light along a light path from the EUV light source toward a collector. A first buffer gas from a buffer gas injector is injected through a plurality of through holes in the collector. The first buffer gas is directed away from a surface of the collector. A second buffer gas is injected from a ring manifold arranged peripherally to the collector and arranged a first distance toward the light path in relation to the collector. The second buffer gas is directed away from the surface of the collector. The first distance corresponds to a distance from the collector where the first buffer gas merges into a single flow.

Abstract: The present disclosure is directed to a system and method configured for curing non-reactive photopolymer collected by an absorbent blotting material during thermal processing of flexographic printing elements. Uncured non-reacted portions of the photopolymer are removed by contacting the one or more layers of photopolymer with the web of absorbent blotting material at an elevated temperature to soften or liquefy the uncured non-reacted portions of the one or more layers of photopolymer and absorb the softened or liquefied uncured non-reacted portions into the absorbent web of absorbent blotting material. The web of absorbent blotter material containing the absorbed softened or liquefied non-reacted portions of the photopolymer is exposed to actinic radiation from the one or more UV light sources to crosslink and cure the softened or liquefied non-reacted portions of the photopolymer.

Abstract: A method of manufacturing an integrated circuit (IC) device includes forming a photoresist layer on a substrate, and exposing the photoresist layer to light by using a photolithographic apparatus including a light generator. The light generator includes a chamber having a plasma generation space, an optical element in the chamber, and a debris shielding assembly between the optical element and the plasma generation space in the chamber, and the debris shielding assembly includes a protective film facing the optical element and being spaced apart from the optical element with a protective space therebetween, the protective space including an optical path, and a protective frame to support the protective film and to shield the protective space from the plasma generation space.

Abstract: A reticle enclosure includes a base including a first surface, a cover including a second surface and coupled to the base with the first surface facing the second surface. The base and the cover form an internal space that includes a reticle. The reticle enclosure includes restraining mechanisms arranged in the internal space and for securing the reticle, and structures disposed adjacent the reticle in the internal space. The structures enclose the reticle at least partially, and limit passage of contaminants between the internal space and an external environment of the reticle enclosure. The structures include barriers disposed on the first and second surfaces. In other examples, a padding is installed in gaps between the barriers and the first and second surfaces. In other examples, the structures include wall structures disposed on the first and second surfaces and between the restraining mechanisms.

Abstract: A system and method for shaping a film on a partial field including determining an initial contact point. Receiving information about: a partial field of a substrate; and an edge of a patternable area of the substrate. Determining a chord that connects intersection vertices of the partial field and the edge. Determining coordinates of a bisecting line, wherein the bisecting line bisects the chord, and the bisecting line is orthogonal to the chord. Determining an initial contact point range on the bisecting line in which a template and formable material on the substrate contact each other. Contacting the formable material in the partial field on the substrate with the template at an initial contact point within the initial contact point range.

Abstract: A droplet catcher system of an EUV lithography apparatus is provided. The droplet catcher system includes a catcher body, a heat transfer part, a heat exchanger, and a controller. The catcher body has an outer surface. The heat transfer part is directly attached to the outer surface of the catcher body. The heat exchanger is thermally coupled to the heat transfer part. The controller is electrically coupled to the heat exchanger.

Abstract: A lithographic apparatus and associated method of controlling a lithographic process. The lithographic apparatus has a controller configured to define a control grid associated with positioning of a substrate within the lithographic apparatus. The control grid is based on a device layout, associated with a patterning device, defining a device pattern which is to be, and/or has been, applied to the substrate in a lithographic process.

Abstract: Aspects of disclosure provide a method for attaching wiring connections to a component using both design and field measured data of the component to produce accurate wiring connections.

Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.

Abstract: A process of characterizing a process window of a patterning process, the process including: obtaining a set of inspection locations for a pattern, the pattern defining features to be applied to a substrate with a patterning process, the set of inspection locations corresponding to a set of the features, the set of features being selected from among the features according to sensitivity of the respective features to variation in one or more process characteristics of the patterning process; patterning one or more substrates under varying process characteristics of the patterning process; and determining, for each of the variations in the process characteristics, whether at least some of the set of features yielded unacceptable patterned structures on the one or more substrates at corresponding inspection locations.

Abstract: Embodiments disclosed herein include a lithographic patterning system and methods of using such a system to form a microelectronic device. In an embodiment, the lithographic patterning system includes an actinic radiation source, a stage where a major surface of the stage is for supporting a substrate with a resist layer, and a first prism over the stage, where the first prism comprises a first face that is substantially parallel to the major surface of the stage. In an embodiment, the lithographic patterning system further comprises a second prism, where the second prism comprises a first surface that is substantially parallel to a second surface of the first prism, and where a second surface of the second prism has a reflective coating.

Abstract: A laser chamber apparatus may include a pipe, an inner electrode extending along a longitudinal direction of the pipe and disposed in a through hole in the pipe, an outer electrode including a contact plate extending along the longitudinal direction of the pipe and being in contact with an outer circumferential surface of the pipe and a ladder section formed of bar members each having one end connected to the contact plate and juxtaposed along a longitudinal direction of the contact plate, and a leaf spring extending along the longitudinal direction of the pipe and configured to press the outer electrode against the pipe. The leaf spring may include leaf spring pieces separated by slits, and the leaf spring pieces may each include a bent section bent along the edge and are configured to press the bar members in a position shifted from the bent sections toward the edge.

Abstract: According to one embodiment, a pattern inspection method includes detecting a region of a photomask having a pattern that differs from a corresponding design, acquiring an exposure focus shift information including an exposure focus shift amount of a portion of a substrate corresponding to the detected region of the photomask. The exposure focus shift amount for the detected region is acquired from the exposure focus shift information, and then a pass/fail determination for the detected region is performed based on an estimated pattern to be formed on the substrate.

Abstract: An apparatus (10) for increasing a pulse length of a pulsed radiation beam, the apparatus comprising: a beam splitter (16) configured to split an input radiation beam (18) into a first beam (24) and a second beam (22); an optical arrangement (12, 14), wherein the beam splitter and the optical arrangement are configured such that at least a portion of the first beam is recombined with the second beam into a modified beam after an optical delay of the first beam caused by the optical arrangement; and at least one optical element (30) in an optical path of the first beam, the at least one optical element configured such that the phase of different parts of a wavefront of the first beam is varied to reduce coherence between the first beam and the second beam.

Abstract: According to aspects of the embodiments, there is provided an apparatus and method for driving a laser imaging module (LIM) that includes an adjustment current to have all laser diodes emitting the same amount of output so that the diodes can be connected in series on a single high current power source. Fine tuning can be done by a dedicated low current controllable power source connected directly to each laser diode. A series connected LIM uses only two heavy gauge wires so total power loss and heat stress on the LIM and module drawer connectors will be significantly reduced. Additional fine tuning can include an electronic gate so that individual diodes could be quickly turned off independently from each other.

Abstract: A device (100) includes a light source (130) and a light guide (110). The light source (130) is configured to emit photoresist-curative electromagnetic radiation. The light guide (110) is arranged to receive the photoresist-curative electromagnetic radiation from the light source (130) and to guide the received radiation by total internal reflection, the light guide (110) including a pattern of emission points (210) on at least one surface of the light guide (110), the emission points (210) emitting the photoresist-curative electromagnetic radiation out of the light guide (110) by frustration of total internal reflection caused by the emission points (210).

Abstract: An apparatus for reducing hydrogen permeation of a mask is provided when generating extreme ultraviolet (EUV) radiation. The apparatus includes a mask stage configured to hold the mask, a hydrogen dispensing nozzle configured to eject hydrogen below the mask, and a trajectory correcting assembly. The trajectory correcting assembly includes a correcting nozzle and a gas flow detector. The correcting nozzle is configured to dispense at least one flow adjusting gas to adjust a trajectory of the hydrogen away from the mask to reduce hydrogen permeation at an edge of the mask. The gas flow detector is configured to measure a variation of an airflow of the hydrogen adjusted by the at least one flow adjusting gas.