Abstract: A system and method are presented for controlling measurements of various sample's parameters. The system comprises a control unit configured as a computer system comprising data input and output utilities, memory, and a data processor, and being configured to communicate with a measured data provider to receive measured data indicative of measurements on the sample. The data processor is configured to perform model-based processing of the measured data utilizing at least one predetermined model, and determine, for each of one or more measurements of one or more parameters of interest of the sample, an estimated upper bound on an error value for the measurement individually, and generate output data indicative thereof.

Abstract: The present disclosure provides a method for an extreme ultraviolet (EUV) lithography system that includes a radiation source having a laser device configured with a mechanism to generate an EUV radiation. The method includes collecting a laser beam profile of a laser beam from the laser device in a 3-dimensional (3D) mode; collecting an EUV energy distribution of the EUV radiation generated by the laser beam in the 3D mode; performing an analysis to the laser beam profile and the EUV energy distribution, resulting in an analysis data; and adjusting the radiation source according to the analysis data to enhance the EUV radiation.

Abstract: The present invention provides an exposure apparatus that exposes a substrate, comprising: an optical system configured to emit, in a first direction, light for exposing the substrate; a first supplier configured to supply a gas into a chamber where the optical system is arranged; and a second supplier configured to supply a gas to an optical path space where the light from the optical system passes through, wherein the second supplier includes a gas blower including a blowing port from which a gas is blown out in a second direction, and the guide member configured to guide the gas blown out from the blowing port to the optical path space, and the guide member includes a plate member extended on a side of the first direction of the blowing port so as to be arranged along the second direction.

Abstract: An exposure apparatus configured to expose a substrate to light from a solid-state light emitting element, includes an illumination optical system configured to illuminate a mask with the light, and a projection optical system configured to project an image of a pattern of the mask onto the substrate, wherein a pupil plane intensity distribution, which is a light intensity distribution on a pupil plane included in the illumination optical system and optically conjugated with a light emission plane of the solid-state light emitting element, is a light intensity distribution in which a maximum intensity is achieved outside an optical axis of the illumination optical system, and wherein the pupil plane intensity distribution is a light intensity distribution on the pupil plane onto which a light emission distribution of the light emission plane is projected with a predetermined magnification.

Abstract: The invention relates a method for manufacturing a damper device including a first part and a second part, said method comprising the following steps: a) providing a damping material in a space in between the first part and the second part, such that the damping material is in a compressed state in the space; and b) heating the device to a predetermined temperature in order to adhere the damping material to the first part and the second part.

Abstract: According to one embodiment, a measuring device includes a support body, a first light source, a second light source, a first sensor, and a second sensor. The support body is configured to support an end portion of a measurement target. The first light source is disposed on a front surface side of the support body. The second light source is disposed on a rear surface side of the support body. An optical axis of the second light source coincides with an optical axis of the first light source. The first sensor is configured to acquire an image of a mark in the measurement target in accordance with light from the first light source. The second sensor is configured to acquire an image of the mark in the measurement target in accordance with light from the second light source.

Abstract: A processing apparatus includes a driver configured to drive a controlled object, and a controller configured to control the driver by generating a command value to the driver based on a control error. The controller includes a first compensator configured to generate a first command value based on the control error, a second compensator configured to generate a second command value based on the control error, and an adder configured to obtain the command value by adding the first command value and the second command value. The second compensator includes a neural network for which a parameter value is decided by learning, and input parameters input to the neural network include at least one of a driving condition of the driver and an environment condition in a periphery of the controlled object in addition to the control error.

Abstract: A wafer edge exposure apparatus includes a wafer carrying module, a reticle, a reticle driving module, an alignment module, an exposure module, and a control module; the wafer carrying module is configured to carry the wafer and drive the wafer to rotate; the wafer includes a valid region and an edge region surrounding the valid region; the reticle driving module is configured to drive the reticle to rotate; the alignment unit is configured to detect the alignment state of the reticle with the wafer; and the control module is configured to control the movement state of the wafer carrying module and the reticle driving module and configured to control the exposure module to perform wafer edge exposure on the wafer.

Abstract: A method of extreme ultraviolet lithography includes: generating within a source vessel extreme ultraviolet (EUV) light by striking a stream of droplets of target material shot across the source vessel with pulses from a laser to create a plasma from which EUV light is emitted; directing the generated EUV light out of the source vessel through an intermediate focus cap along a pathway toward a reticle of a scanner; creating a longitudinal mechanical wave extending across the pathway; and exposing a photoresist layer on a semiconductor substrate to pattern a circuit layout by the generated EUV light.

Abstract: The present invention discloses a reticle storage pod including an outer pod which includes an outer cover and an outer base. The outer cover and the outer base can be coupled to securely accommodate one of a first inner pod and a second inner pod that are differently structured in the outer pod. The first inner pod and the second inner pod are for individually accommodating a reticle. The outer cover is provided with at least one first hold-down mechanism and at least one second hold-down mechanism, and the first hold-down mechanism and the second hold-down mechanism respectively act on a cover of the first inner pod and a cover of the second inner pod that are differently structured.

Abstract: Methods, systems and apparatus for decreasing total distortion of a maskless lithography process are disclosed. Some embodiments provide methods, systems and apparatus for decreasing total distortion without physical modification of the apparatus.

Abstract: An extreme ultraviolet (EUV) source includes a module vessel and a scrubber system. The scrubber system may include a plurality of gutters in the module vessel. The plurality of gutters may include a first gutter and a second gutter. The second gutter may be lower than the first gutter in the module vessel. A unit volume of the second gutter is larger than a unit volume of the first gutter.

Abstract: A field facet system for a lithography apparatus includes an optical element. The optical element includes a base section having an optically effective surface. The optical element also includes a plurality of lever sections provided at a rear side of the base section facing away from the optically effective surface. In addition, the field facet system includes two or more actuating elements configured, with the aid of the lever sections acting as levers, to apply in each case a bending moment to the base section to elastically deform the base section and thus to alter a radius of curvature of the optically effective surface. The actuating elements are arranged in series as viewed along a length direction of the optical element.

Abstract: A method of determining representative patterns for training a machine learning model to predict optical proximity corrections. The method includes obtaining a design layout including a set of groups of patterns, each group of patterns includes one or more sub-groups; determining a set of representative patterns of the set of groups of patterns, a representative pattern being a sub-group whose instances appear in the set of groups of patterns; obtaining, via simulating an optical proximity correction process using the set of representative patterns, optical proximity correction data associated with the set of representative patterns; and training a machine learning model to predict optical proximity corrections for the design layout based on the set of representative patterns and the set of optical proximity correction data.

Abstract: A method of determining a control setting for a lithographic apparatus. The method includes obtaining a first correction for a current layer on a current substrate based on first metrology data associated with one or more previous substrates, and obtaining a second correction for the current layer on the current substrate. The second correction is based on a residual determined based on second metrology data associated with a previous layer on the current substrate. The method further includes determining the control setting for the lithographic apparatus for patterning the current layer on the current substrate by combining the first correction and the second correction.

Abstract: A microlithographic projection exposure mirror has a mirror substrate (12, 32), a reflection layer system (21, 41) for reflecting electromagnetic radiation that is incident on the mirror's optical effective surface, and at least one piezoelectric layer (16, 36), which is arranged between the mirror substrate and the reflection layer system and to which an electric field for producing a locally variable deformation is applied by a first electrode arrangement situated on the side of the piezoelectric layer facing the reflection layer system, and by a second electrode arrangement situated on the side of the piezoelectric layer facing the mirror substrate. One of the electrode arrangements is assigned a mediator layer (17, 37, 51, 52, 53, 71) for setting an at least regionally continuous profile of the electrical potential along the respective electrode arrangement. The mediator layer has at least two mutually electrically insulated regions (17a, 17b, 17c, . . . ; 37a, 37b, 37c, . . . ).

Abstract: A radiation system for controlling pulses of radiation comprising an optical element configured to interact with the pulses of radiation to control a characteristic of the pulses of radiation, an actuator configured to actuate the optical element according to a control signal received from a controller, the control signal at least partially depending on a reference pulse repetition rate of the radiation system and, a processor configured to receive pulse information from the controller and use the pulse information to determine an adjustment to the control signal. The radiation system may be used to improve an accuracy of a lithographic apparatus operating in a multi-focal imaging mode.

Abstract: A lithographic apparatus including a projection system having an optical axis and configured to project a radiation beam. The apparatus includes a measurement unit arranged to measure the radiation beam projected by the projection system, the measurement unit having an opening through which the radiation beam passes in use, and a sensing surface extending transverse to the optical axis and arranged to measure the radiation beam passing through the opening. The apparatus is configured to move the sensing surface in a plane transverse to the optical axis between a plurality of measurement positions. The radiation beam defines a view in the plane, and the measurement unit is configured such that the sensing surface captures, in each measurement position, a portion of the view smaller than 100% of the view.

Abstract: An image forming system (100) includes an image forming apparatus (1) and an image reading apparatus (50). The image forming apparatus (1) include a first casing (10) including a top plate (13) having a first opening (11) and a second opening (12); and a fixing member (20) disposed below the top plate (13), having a first projecting part (21) and a second projecting part (22) and operated such that the first projecting part (21) is protruded and retracted through the first opening (11) and the second projecting part (22) is protruded and retracted through the second opening (12).

Abstract: Method and system for defining basis functions for fitting distortions of profiles of objects in a batch, that has undergone a fabrication process, in a manner adaptable to the fabrication process to reduce the errors between profiles approximated with the use of such basis functions and actual object profiles. Process-specific individual basis functions are defined based on spatially-dense measurement of objects from training sub-set of the batch and applying learning algorithm to results of such measurement. Advantages of process-adaptable basis functions over generic basis functions for fitting distortion shapes of objects include higher accuracy of fitting either at larger or a fewer locations across the object.