Abstract: Embodiments of a tantalum (Ta) target pasting process for deposition chambers using RF powered processes include pasting at least a portion of the inner surfaces of the process chamber with Ta after using RF sputtering to deposit dielectric material on a wafer. Pressure levels within the process chamber are adjusted to maximize coverage of the Ta pasting layer. The Ta pasting encapsulates the dielectric material that has been inadvertently sputtered on the process chamber inner surfaces such as the shield. Oxygen is then flowed into the process chamber to form a tantalum oxide layer on the Ta pasting layer to further reduce contamination and particle generation.

Abstract: A method for preparing a CeOx coating on a surface of a substrate includes depositing a CeOx coating on the surface by means of a reactive magnetron sputtering from a pure cerium target. The CeOx coating can be transparent for visible light. A method for reducing the adhesion of a tissue material such as from a human to a surface of a medical instrument, for reducing the water condensation and improving the heat transfer performance of a heat exchanger surface of a substrate, and for reducing corrosion of a surface of a substrate includes depositing a CeOx coating on the substrate by means of a reactive magnetron sputtering from a pure cerium target. This provides an environmentally friendly preparation of the CeOx coating with no need for organic solvents or volatile organic compounds. The CeOx coating has good hydrophobicity, enhanced hardness, exceptionally high wear resistance, and superior thermal stability.

Abstract: An apparatus has a cathode target with a cathode target outer perimeter. An inner magnet array with an inner magnet array inner perimeter is within the cathode target outer perimeter. The inner magnet array includes an inner magnet array base portion and an inner magnet array upper portion. A keeper plate assembly is connected to the inner magnet array upper portion and isolates the inner magnet array upper portion from the inner magnet array base portion. An outer magnet array is connected to a bottom surface of the keeper plate. The outer magnet array has an outer magnet array outer perimeter larger than the inner magnet array inner perimeter. The inner magnet array upper portion has a first magnetic orientation and the outer magnet array and the inner magnet array base portion have a second magnetic orientation opposite the first magnetic orientation.

Abstract: Embodiments herein include a transparent halo assembly for reducing an amount of sputtered material to minimize particle defects impacting a workpiece. In some embodiments, a halo assembly may include a first halo arranged around a semiconductor workpiece, and a mounting assembly coupling the first halo to a roplat. The first halo may include a first side opposite a second side, and a first end opposite a second end, wherein the first side is operable to receive an ion beam from an ion source. The first halo may further include a plurality of apertures extending between the first and second sides, wherein the plurality of apertures permit passage of a portion of the ion beam to pass therethrough, towards the mounting assembly. In some embodiments, the halo assembly may include a second halo positioned proximate the first halo, and a third halo disposed between the first halo and the mounting assembly.

Abstract: A sputtering target-backing plate assembly in which a Si sputtering target is bonded to a backing plate by way of a brazing material, wherein the brazing material has a melting point of 200° C. or higher and a bonding strength of 0.16 kgf/cm2 or higher. An object is to provide a sputtering target-backing plate assembly in which a Si sputtering target is bonded to a backing plate by way of a brazing material, wherein the sputtering target-backing plate assembly has a high bonding strength and is free from separation even under high temperature sputtering conditions such as during high power sputtering.

Abstract: A film-forming device according to one embodiment includes a chamber body, a support, a moving device, a shielding member, a first holder and a second holder, in the film-forming device, a substrate supported by the support is linearly moved. The shielding member is disposed above an area where the substrate is moved, and includes a slit extending in a direction perpendicular to a movement direction of the substrate. The first holder and the second holder hold a first target and a second target, respectively, above the shielding member. The first target and the second target are arranged symmetrically with respect to a vertical plane including a linear path on which the center of the substrate is moved.

Abstract: The sputtering cathode has a tubular shape having a pair of long sides facing each other in cross-sectional shape, has a sputtering target whose erosion surface faces inward, and a magnetic circuit is provided along the sputtering target. The pair of long sides are constituted by rotary targets each having a cylindrical shape. The rotary target is internally provided with a magnetic circuit and configured to allow the flow of cooling water. The magnetic circuit is provided parallel to the central axis of the rotary target and has a rectangular cross-sectional shape having a long side perpendicular to the radial direction of the rotary target.

Abstract: An oxide sintered body includes a bixbyite phase represented by In2O3, and a garnet phase represented by Y3In2Ga3O12.

Abstract: Sputtering targets including molybdenum, niobium and tantalum are found to be useful for sputtering films for electronic devices. Sputtering targets with about 88 to 97 weight percent molybdenum show improved performance, particularly with respect to etching, such as when simultaneously etching an alloy layer including the Mo, Nb, and Ta, and a metal layer (e.g., an aluminum layer). The targets are particularly useful in manufacturing touch screen devices.

Abstract: A method and a system for film deposition, the system comprising a substrate and a negatively biased target, the target being mounted on a magnetron sputtering cathode and located at a distance from the substrate, wherein a laser beam from a pulsed laser is focused on the target, thereby triggering a magnetron plasma or ejecting vaporized and ionized material from the target in an existing magnetron plasma, the magnetron plasma sputtering material from the target depositing on the substrate.

Abstract: A method for manufacturing an implantable medical device, the method including the steps of: (a) providing in a vapor deposition chamber a substrate including a substrate material, an anodic source made of an anodic material, and a cathodic source made of a cathodic material, the anodic and cathodic materials forming a galvanic couple; (b) operating the vapor deposition chamber to vaporize simultaneously the anodic and cathodic materials from the anodic and cathodic sources and depositing the vaporized cathodic and anodic materials on the substrate to produce a coated substrate including the substrate material coated by a bioresorbable coating; and (c) obtaining the implantable medical device from the coated substrate. Also, a stent, a medical device and a bioresorbable material obtained with vapor deposition of materials forming a galvanic couple.

Abstract: The present invention relates to an arc vaporization source for generating hard surface coatings on tools. The invention comprises an arc-vaporization source, comprising at least one electric solenoid and a permanent magnet arrangement that is displaceable relative to the target surface. The vaporization source can be adjusted to the different requirements of oxide, nitride, or metal coatings. The rate drop during the lifespan of a target to be vaporized can be held constant or adjusted by suitably adjusting the distance of the permanent magnets to the front side of the target. A compromise between the coating roughness and rate can be set.

Abstract: A sputtering target comprising a sputtering material and having a non-planar sputtering surface prior to erosion by use in a sputtering system, the non-planar sputtering surface having a circular shape and comprising a central axis region including a concave curvature feature at the central axis region. The central axis region having a wear profile after erosion by use in a sputtering system for at least 1000 kWhrs including a protuberance including a first outer circumferential wear surface having a first slope. A reference, protruding convex curvature feature for a reference target after sputtering use for the same time includes a second outer circumferential wear surface having a second slope. The protuberance provides a sputtered target having reduced shadowing relative to the reference, protruding convex curvature feature, wherein the first slope is less steep than a second slope.

Abstract: A method of depositing of a film on a substrate with controlled adhesion. The method comprises depositing the film including metal, wherein the metal is deposited on the substrate using physical vapor deposition at a pressure that achieves a pre-determined adhesion of the film to the substrate. The pre-determined adhesion allows processing of the film into a device while the film is adhered to the substrate but also allows removal of the device from the substrate.

Abstract: A process in which both an optical coating, for example, an AR coating, and an ETC coating are deposited on a glass substrate article, in sequential steps, with the optical coating being deposited first and the ETC coating being deposited second, using the same apparatus and without exposing the article to the atmosphere at any time during the application of the optical coating and ETC coating.

Abstract: The invention relates to a method for decorating a timepiece component comprising: a) a step of preparation of the timepiece component optionally comprising a first step of depositing a first material on the timepiece component to form a first sub-layer, b) a second step of depositing a second material on the timepiece component obtained in step a) to form a second sub-layer, c) a colouring step comprising the deposition of a third coloured material on the timepiece component obtained in step b) to form a coloured external decorative layer, According to the invention, at least step b) and step c) are achieved by a physical vapour deposition method.

Abstract: An apparatus for generating sputtering of a target to produce a coating on a substrate is provided. The apparatus has a magnetron including a cathode and an anode. A power supply is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. The apparatus also includes an inductance operably connected to the at least one capacitor. A first switch and a second switch are also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. The second switch is operably connected to discharge the magnetron. The second switch is configured to discharge the magnetron according to a second pulse.

Abstract: A holding arrangement for holding a substrate is described. The holding arrangement includes a body having a first wall of flexible material; an adhesive arrangement configured for attaching the substrate, wherein the adhesive arrangement is provided on a first side of the first wall, and a force transmission arrangement configured for applying a force to a second side of the first wall opposing the first side of the first wall.

Abstract: Provided is a tantalum sputtering target that contributes to improvement of film thickness uniformity during a high-power sputtering. A tantalum sputtering target having a purity of 99.99% by mass or more and an average value of Vickers hardness on a sputtering surface of from 85 to 110 Hv, the tantalum sputtering target satisfying both of the following conditions (1) and (2): (1) when a cross section perpendicular to the sputtering surface is measured by EBSP, an average value of Kernel Average Misorientation values (KAM values) is from 0.2° to 2.8°; and (2) when a cross section perpendicular to the sputtering surface is measured by EBSP, an average value of orientation area ratios of a {100} plane oriented at a misorientation of within 15° relative to a normal direction of the sputtering surface is 20% or more.

Abstract: Embodiments of methods for depositing material in features of a substrate have been provided herein. In some embodiments, a method for depositing material in a feature of a substrate includes depositing a material in a feature of a substrate disposed in a process chamber by sputtering a target using a plasma formed from a first gas; and etching the deposited material in the process chamber using a plasma formed from a second gas, different than the first gas, to at least partially reduce overhang of the material in the feature, wherein an atomic mass of the second gas is greater than an atomic mass of the first gas.