Abstract: A plasma processing apparatus includes a chamber (20) and a target (25) above the chamber (20). The surface of the target (25) contacts the processing area of the chamber (20). The chamber (20) includes an insulating sub-chamber (21) and a first conductive sub-chamber (22), which are superposed. The first conductive sub-chamber (22) is provided under the insulating sub-chamber (21). The insulating sub-chamber (21) is made of insulating material, and the first conductive sub-chamber (22) is made of metal material. A Faraday shield component (10) which is made of metal material or insulating material electroplated with conductive coatings and includes at least one slit is provided in the insulating sub-chamber (21). An inductance coil (13) surrounds the exterior of the insulating sub-chamber (21). The problem about the wafer contamination due to particles formed on the surface of the coil during the sputtering process can be solved by using the plasma processing apparatus.

Abstract: A tubular target for cathode atomization does not have a backing tube and it is made of molybdenum or a molybdenum alloy. The target has an inner surface which is in contact at least in certain regions with a cooling medium, wherein at least one region of the inner surface is separated from the cooling medium by at least one protective device. By way of example, the protective device may be in the form of a polymer layer. The tubular target exhibits outstanding long-term stability.

Abstract: A method is for depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields. In the method, a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10 cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.

Abstract: There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

Abstract: A substrate processing system that is optimized for the production of smaller volumes of semiconductor components is disclosed. To minimize cost, the substrate processing system is designed to accommodate smaller substrates, such as substrates having a diameter of roughly one inch. Additionally, the components of the substrate processing system are designed to be interchangeable, thereby further reducing cost and complexity. In certain embodiments, the substrate processing system comprises a lower assembly, which may be used with one or more upper assemblies. The lower assembly is used to support the substrate and provide many of the fluid, electrical, and sensor connections, while the upper assemblies include the apparatus required to perform a certain fabrication function. For example, different upper assemblies may exist for deposition, etching, sputtering and ion implantation.

Abstract: Provided are a Mn—Zn—W—O sputtering target having excellent crack resistance and a production method therefor. The Mn—Zn—W—O sputtering target has a chemical composition containing Mn, Zn, W, and O. From an X-ray diffraction pattern of the Mn—Zn—W—O sputtering target, a ratio PMnO/PW of a maximum peak intensity PMnO of a peak due to a manganese oxide composed only of Mn and O to a maximum peak intensity PW of a peak due to W is 0.027 or less.

Abstract: Sb—Te-based alloy sintered sputtering target having a Sb content of 10 to 60 at %, a Te content of 20 to 60 at %, and remainder being one or more types of elements selected from Ag, In, and Ge and unavoidable impurities, wherein an average grain size of oxides is 0.5 ?m or less. An object of this invention is to improve the texture of the Sb—Te-based alloy sintered sputtering target in order to prevent the generation of arcing during sputtering and improve the thermal stability of the sputtered film.

Abstract: The present invention provides an epitaxial film forming method for epitaxially growing a high-quality group III nitride semiconductor thin film on an ?-Al2O3 substrate by a sputtering method. In the epitaxial film forming method according to an embodiment of the present invention, when an epitaxial film of a group III nitride semiconductor thin film is to be formed on the ?-Al2O3 substrate arranged on a substrate holder provided with a heater electrode and a bias electrode of a sputtering apparatus, in a state where the ?-Al2O3 substrate is maintained at a predetermined temperature by the heater electrode, high-frequency power is applied to a target electrode and high-frequency bias power is applied to a bias electrode and at that time, the powers are applied so that frequency interference between the high-frequency power and the high-frequency bias power does not occur.

Abstract: An object of the invention is to reduce sizes of an inert gas supply and exhaust devices used for a pulse sputtering device. Another object is to efficiently supply suitable quantity of the inert gas to a place where the inert gas is required in the pulse sputtering device. Therefore, a provided pulse sputtering device has a sputtering source that performs pulse discharge and generates plasma, a gas injection valve that injects and supplies an inert gas to the sputtering source and a controller that controls the sputtering source and the gas injection valve. The controller controls the sputtering source and the gas injection valve such that the gas injection valve injects the inert gas intermittently and such that a part of a period, in which the pulse discharge occurs in the sputtering source, overlaps with a part of a period, in which the gas injection valve injects and supplies the inert gas.

Abstract: Cylindrical evaporation source which includes, at an outer cylinder wall, target material to be evaporated as well as a first magnetic field source and a second magnetic field source which form at least a part of a magnet system and are arranged in an interior of the cylindrical evaporation source for generating a magnetic field. In this respect, first magnetic field source and second magnetic field source are provided at a carrier system such that a shape and/or a strength of the magnetic field can be set in a predefinable spatial region in accordance with a predefinable scheme. In embodiments, the carrier system is configured for setting the shape and/or strength of the magnetic field of the carrier system such that the first magnetic field source is arranged at a first carrier arm and is pivotable by a predefinable pivot angle (?1) with respect to a first pivot axis.

Abstract: Apparatus for recording data and method for making the same. In accordance with some embodiments, a magnetic layer is supported by a substrate and comprises a magnetic magnetic material, a non-magnetic material, and an energy assisted segregation material. The segregation material enhances segregation of the non-magnetic material into grain boundaries within the layer at an elevated, moderate energy level.

Abstract: Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate.

Abstract: The disclosure provides an anti-aging periodic variable reaction black chromium coating film, sequentially comprising: an aluminum alloy matrix, a silane conversion film, a high-gloss organic resin coating, a metal compound and metal element periodic variable content alloy coating film, and a transparent resin coating. The disclosure simultaneously provides a method for forming the anti-aging periodic variable reaction black chromium coating film.

Abstract: A method of preparing a sample for microstructure diagnostics on a sample body by material-ablating processing, and subsequently producing an examination region on the sample portion, the examination region including a target region to be examined, the method including producing a terracing zone including the target region on at least one surface of the sample portion, wherein at least one notch with flanks extending obliquely in relation to the surface is produced next to the target region by material-ablating beam processing to produce the terracing zone, and ablating material from the surface of the sample portion in the region of the terracing zone by an ion beam, which is radiated under grazing incidence onto the surface obliquely to the direction of extent of the notch such that the target region lies behind the notch in the incoming radiation direction of the ion beam and, as a result of the terracing in the region behind the notch, the surface is recessed substantially parallel to the original height

Abstract: A method for coating stainless steel press plates includes preparing the stainless steel press plate for coating and coating the stainless steel press plate with a diboride doped with 1%-5% by weight aluminum to produce a diboride-aluminum coating. The step of coating includes applying the diboride-aluminum coating to a stainless steel press plate using a magnetron sputter coating system.

Abstract: In these investigations, an attempt has been made to correlate the deposition parameters of the reactive cathodic arc evaporation with processes at the surface of the composite Al—Cr targets and the nucleation and phase formation of the synthesized Al—Cr—O layers. The oxygen partial pressure and the pulsed operation of the arc current influence the formation of intermetallic phases and solid solutions at the target surface. The nucleation of the ternary oxides at the substrate site appears to be, to some extent, controllable by the intermetallics or solid solutions formed at the target surface. A specific nucleation process at substrate site can therefore be induced by the free choice of target composition in combination with the partial pressure of the oxygen reactive gas. It also allows the control over the oxide island growth at the target surface which occurs occasionally at higher oxygen partial pressure.

Abstract: A process for making a composite product comprises the steps of: A. Circumferentially plating a carbon fiber core with an alloy film including a film of high entropy alloy and liquid metal alloy or a film of metallic glass to form a film-clad carbon fiber thread; B. Weaving a plurality of said film-clad carbon fiber threads to form an interlaced film-clad carbon fiber sheet; and C. Vibrationally thermally pressing a plurality of said interlaced film-clad carbon fiber sheets as superimposed with one another to form a composite product.

Abstract: A rotary sputtering cathode assembly is provided that comprises a rotatable target cylinder having a first end and an opposing second end. A first power transfer apparatus is configured to carry radio frequency power to the first end of the target cylinder, and a second power transfer apparatus is configured to carry radio frequency power to the second end of the target cylinder. Radio frequency power signals are simultaneously delivered to both of the first and second ends of the target cylinder during a sputtering operation.

Abstract: Multi-layer sheets of graphene-based material having a plurality of pores extending therethrough are described herein. Methods for making the sheets are also provided and include exposing a graphene-based material comprising multilayer graphene having from 2 to 10 layers of graphene to a particle beam comprising nanoparticles, the nanoparticles having an energy of at least 2 keV per nanoparticle.

Abstract: An apparatus for generating sputtering of a target to produce a coating on a substrate is provided. The apparatus comprises a magnetron including a cathode and an anode. A power supply is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. A first switch is also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. An electrical bias device is operably connected to the substrate and configured to apply a substrate bias.