Abstract: This sputtering cathode has a sputtering target having a tubular shape in which the cross-sectional shape thereof has a pair of long side sections facing each other, and an erosion surface facing inward. Using the sputtering target, while moving a body to be film-formed, which has a film formation region having a narrower width than the long side sections of the sputtering target, parallel to one end face of the sputtering target and at a constant speed in a direction perpendicular to the long side sections above a space surrounded by the sputtering target, discharge is performed such that a plasma circulating along the inner surface of the sputtering target is generated, and the inner surface of the long side sections of the sputtering target is sputtered by ions in the plasma generated by a sputtering gas to perform film formation in the film formation region of the body to be film-formed.

Abstract: Methods and apparatus for physical vapor deposition are provided herein. In some embodiments, a process kit shield for use in a physical vapor deposition chamber may include an electrically conductive body having one or more sidewalls defining a central opening, wherein the body has a ratio of a surface area of inner facing surfaces of the one or more sidewalls to a height of the one or more sidewalls of about 2 to about 3.

Abstract: A film forming apparatus for forming a thin film on a flexible substrate. The film forming apparatus forms a thin film on a flexible substrate under vacuum. The film forming apparatus includes a first zone into which a first gas is introduced and a second zone into which a second gas is introduced in a vacuum chamber. Zone separators have openings through which the flexible substrate passes. The film forming apparatus includes a mechanism that reciprocates the flexible substrate between the zones. Further, the film forming apparatus includes a mechanism that supplies a raw material gas containing metal or silicon to the first zone, and a mechanism that performs sputtering of a material containing metal or silicon as a target material in the second zone.

Abstract: A device for cooling a target, having a component that includes a cooling duct and having an additional thermally conductive plate that is detachably fastened to the cooling side of the component, the cooling side being the side on which the cooling duct exerts its cooling action, characterized in that between the additional thermally conductive plate and the cooling side of the component, a first self-adhesive carbon film is provided, which is extensively and self-adhesively glued to the one side of the additional thermally conductive plate that faces the cooling side.

Abstract: A sputtering system that includes a sputtering chamber having a target material serving as a cathode, and an anode and a work piece. A direct current (DC) power supply supplies electrical power to the anode and the cathode sufficient to generate a plasma within the sputtering chamber. A detection module detects the occurrence of an arc in the sputtering chamber by monitoring an electrical characteristic of the plasma. In one embodiment the electrical characteristic monitored is the impedance of the plasma. In another embodiment the electrical characteristic is the conductance of the plasma.

Abstract: The present invention provides a niobium oxide sintered compact having a composition of NbOx (2<x<2.5), and specifically provides a niobium oxide sintered compact which can be applied to a sputtering target for forming a high-quality resistance change layer for use in ReRAM. In particular, the present invention aims to provide a high-density niobium oxide sintered compact suitable for stabilizing the sputtering process.

Abstract: Embodiments of the present disclosure generally describe methods for depositing an amorphous carbon layer onto a substrate, including over previously formed layers on the substrate, using a high power impulse magnetron sputtering (HiPIMS) process, and in particular, biasing of the substrate during the deposition process and flowing a nitrogen source gas and/or a hydrogen source gas into the processing chamber in addition to an inert gas to improve the morphology and film stress of the deposited amorphous carbon layer.

Abstract: Embodiments presented herein relate to a pulse control system for a substrate processing system. The pulse control system includes a power source, a system controller, and a pulse shape controller. The pulse shape controller is coupled to the power source and in communication with the system controller. The pulse shape controller includes a first switch assembly and a second switch assembly. The first switch assembly includes a first switch having a first end and a second end. The first switch is configurable between an open state and a closed state. The second switch assembly includes a second switch having a first end and a second end. The first switch is in the closed state and the second switch is in the open state. The first switch in the closed state is configured to allow a pulse supplied by the power source to transfer through the pulse shape controller.

Abstract: A shadow mask having two or more levels of openings enables selective step coverage of micro-fabricated structures within a micro-optical bench device. The shadow mask includes a first opening within a top surface of the shadow mask and a second opening within the bottom surface of the shadow mask. The second opening is aligned with the first opening and has a second width less than a first width of the first opening. An overlap between the first opening and the second opening forms a hole within the shadow mask through which selective coating of micro-fabricated structures within the micro-optical bench device may occur.

Abstract: A method for reducing the adhesion of dirt to a substrate is provided, where a thin, incompletely closed layer of a material is deposited on at least one surface area of the substrate by means of a vacuum deposition process, and then said surface area is acted upon by accelerated ions.

Abstract: An oxide sintered body is obtained by sintering indium oxide, gallium oxide and tin oxide. The oxide sintered body has a relative density of 90% or more and an average grain size of 10 ?m or less. In the oxide sintered body, the relations 30 atomic %?[In]?50 atomic %, 20 atomic %?[Ga]?30 atomic % and 25 atomic %?[Sn]?45 atomic % are satisfied. [In], [Ga] and [Sn] are ratios of contents (atomic %) of indium gallium and tin, respectively, to all metal elements contained in the oxide sintered body. The oxide sintered body has an InGaO3 phase which satisfies the relation [InGaO3]?0.05.

Abstract: A compound thin film is obtained with a high deposition rate and consistent film quality in reactive sputtering. A thin film is formed by performing voltage monitoring control and gas flow rate monitoring control. The voltage monitoring control is control in which a gas flow rate is adjusted such that the value of a target voltage is brought closer to the value of a desired voltage by monitoring the target voltage in a first cycle time. The gas flow rate monitoring control is control in which the desired voltage for the target voltage is changed such that the value of the gas flow rate is brought closer to the value of a desired gas flow rate by monitoring the gas flow rate in a second cycle time.

Abstract: A film-forming method includes a sputtering step of forming a silicon nitride film or a silicon oxynitride film on a surface of a substrate by a sputtering method. The sputtering step is performed using a silicon-containing target, and using at least a nitrogen gas. The sputtering step is performed in an atmosphere having a water vapor partial pressure of about 1.5×10?3 Pa or less. A central region of the silicon nitride film or the silicon oxynitride film formed in the sputtering step has a hydrogen content of about 2 atom % or more.

Abstract: An apparatus for plating Nd—Fe—B magnet includes a cathode and a target source holder defining a predetermined distance of 5 mm to 200 mm therebetween. A pulse bias power supply having a first positive terminal connected to an anode and a first negative terminal connected to the cathode. A DC bias power supply having a second positive terminal connected to the anode and a second negative terminal connected to the target source holder. The anode is connected to the earth ground. A method for plating the Nd—Fe—B magnet includes steps of maintaining the predetermined distance of 5 mm to 200 mm between the cleaned Nd—Fe—B magnet and the target source material, increasing a first electric potential to the cathode and a second electric potential to the target source holder with the second electric potential greater than the first electric potential, and maintaining a potential differential of 0V to 500V therebetween.

Abstract: A sputtering target for the production of layers such as optical layers, the layers produced by the target, and a method for producing the target are described. In addition to Si or a combination of Si and Al, the sputtering target contains metal oxide(s), a combination of at least two metal oxides, or a combination containing at least one metal oxide in the form of an alloy or in the form of a mixture. The sputtering target has a metal oxide fraction generated by the Si and Al and the metal oxide(s) or the combination thereof. Preferably, the metal oxide in the sputtering target is a metal oxide selected from ZrO2, Ta2O5, Y2O3, HfO, CaO, MgO, Ce2O3, Al2O3, TiO2 and Nb2O5.

Abstract: A method of manufacturing an iron bus bar includes preparing an iron core and forming a copper layer having a thickness of 10 to 30 ?m on the iron core by coating. The manufactured iron bus bar has high strength and durability as well as excellent electrical conductivity can be manufactured at low cost.

Abstract: A method, system, and computer-readable medium for forming transmission electron microscopy sample lamellae using a focused ion beam including directing a high energy focused ion beam toward a bulk volume of material; milling away the unwanted volume of material to produce an unfinished sample lamella with one or more exposed faces having a damage layer; characterizing the removal rate of the focused ion beam; subsequent to characterizing the removal rate, directing a low energy focused ion beam toward the unfinished sample lamella for a predetermined milling time to deliver a specified dose of ions per area from the low energy focused ion beam; and milling the unfinished sample lamella with the low energy focused ion beam to remove at least a portion of the damage layer to produce the finished sample lamella including at least a portion of the feature of interest.

Abstract: Reactive sputtering in which, by ion bombardment, material is ejected from the surface of a target and transitions to the gas phase. Negative voltage pulses are applied to the target to establish electric current having a current density greater than 0.5 A/cm2 at the target surface, such that the material transitioning to the gas phase is ionized. Reactive gas flow is established and reacts with the material of the target surface. Voltage pulse duration is such that, during the pulse, the target surface where the current flows is at least partly covered most of the time with a compound composed of reactive gas and target material and, consequently, the target surface is in a first intermediate state, and this covering is smaller at the end of the voltage pulse than at the start and, consequently, the target surface is in a second intermediate state at the end of the voltage pulse.

Abstract: A method is provided for forming a piezoelectric layer during a corresponding deposition sequence. The method includes sputtering aluminum nitride onto a sputtering substrate inside a reaction chamber having a gas atmosphere, the gas atmosphere initially including nitrogen gas and an inert gas, causing growth of the piezoelectric layer with a polarity in a negative direction. The method further includes adding a predetermined amount of oxygen containing gas to the gas atmosphere over a predetermined period of time, while continuing the sputtering of the aluminum nitride onto the sputtering substrate during a remainder of the deposition sequence, such that the piezoelectric layer is monolithic. The predetermined amount of oxygen containing gas causes the polarity of the aluminum nitride piezoelectric layer to invert from the negative direction to a positive direction, opposite the negative direction.

Abstract: A method for reducing the optical loss of the multilayer coating below a predetermined value in a zone by producing coating on a displaceable substrate in a vacuum chamber with the aid of a residual gas using a sputtering device. Reactive depositing a coating on the substrate by adding a reactive component with a predetermined stoichiometric deficit in a zone of the sputtering device. Displacing the substrate with the deposited coating into the vicinity of a plasma source, which is located in the vacuum chamber at a predetermined distance from the sputtering device. The plasma action of the plasma source modifying the structure and/or stoichiometry of the coating, preferably by adding a predetermined quantity of the reactive component to reduce the optical loss of the coating.