Abstract: An optical member includes a conversion member including a first surface that serves as a light-irradiated surface or a light extraction surface, and adapted to convert laser light, which is an excitation light, into light having a wavelength different from a wavelength of the excitation light; a holding member holding the conversion member and including a second surface that is continuous with the first surface of the conversion member; and a wiring having an elongated shape and extending continuously along the first surface of the conversion member and the second surface of the holding member.

Abstract: Stimulated Brillouin scattering (SBS) limits the maximum power in fiber lasers with narrow linewidths. SBS occurs when the power exceeds a threshold proportional to the beam area divided by the effective fiber length. The fiber lasers disclosed here operate with higher SBS power thresholds (and hence higher maximum powers at kilohertz-class linewidths) than other fiber lasers thanks to several techniques. These techniques include using high-absorption gain fibers, operating the laser with low pump absorption (e.g., ?80%), reducing the length of un-pumped gain fiber at the fiber output, foregoing a delivery fiber at the output, foregoing a cladding light stripper at the output, using free-space dichroic mirrors to separate signal light from unabsorbed pump light, and using cascaded gain fibers with non-overlapping Stokes shifts. The upstream gain fiber has high absorption and a larger diameter for high gain, and subsequent gain fiber has a smaller diameter to improve beam quality.

Abstract: External cavity diode laser (ECDL) devices and methods for producing the same are described that allows ECDLs to be readily produced and configured to operate at a desired range of wavelengths, while allowing tunability of the output wavelength. One ECDL includes a laser gain chip including a gain medium, a first reflective surface at a first end of the gain medium, and a second surface at a second end of the gain medium opposite to the first reflective surface. The second surface has a facet that forms an angle approximately equal to Brewster's angle for light having a first wavelength. The ECDL further includes a diffraction grating positioned to receive light that passes through the second surface, to operate as a mirror in the external cavity diode laser, and to allow a portion of the light to be directed outside of the external cavity diode laser as output light.

Abstract: The ultrafast pulse fiber laser system is configured with scalable output power and operative to reduce degradation of pulse integrity. The disclosed laser system is configured to suppress the pulse distortion through improvement of initial pulse contrast between main and side pulses and improved pulse shape using chirped pulse amplification and a fast intensity modulator driver by a corrected electrical signal that is generated from the original optical signal. The structure providing the improvement includes the photodiode, which is operative to measure the chirped optical pulse and convert it to the electrical signal, and analog electronics that quickly converts the electrical signal to the required signal that suppress the side pulses.

Abstract: One illustrative laser disclosed herein includes a gain medium layer having a first width in a transverse direction that is orthogonal to a laser emitting direction of the laser, and an upper light-confining structure positioned above an upper surface of the gain medium layer, wherein the upper light-confining structure has a second width in the transverse direction that is equal to or less than the first width and comprises at least one material having an index of refraction that is at least 2.0. The laser also includes a lower light-confining structure positioned below a lower surface of the gain medium layer, wherein the lower light-confining structure has a third width in the transverse direction that is equal to or less than the first width and comprises at least one material having an index of refraction that is at least 2.0.

Abstract: Embodiments of the present disclosure may relate to a digitized grating that may include a first unit cell that has a first period and a first length, where the first period includes a first grating element width and a first space between adjacent grating elements, and where the first length includes a number of first periods. The digitized grating may further include a second unit cell that has a second period and a second length, where the second period is different than the first period and includes a second grating element width and a second space between adjacent grating elements, and where the second length includes a number of second periods.

Abstract: A method of manufacturing a light emitting element includes, sequentially (a) forming a first light reflecting layer having a convex shape; (b) forming a layered structure body by layering a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; (c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film; (d) fixing the second light reflecting layer to a support substrate; (e) removing the substrate for manufacturing a light emitting element, and exposing the first surface of the first compound semiconductor layer and the first light reflecting layer; (f) etching the first surface of the first compound semiconductor layer; and (g) forming a first electrode on at least the etched first surface of the first compound semiconductor layer.

Abstract: A laser integrated photonic platform to allow for independent fabrication and development of laser systems in silicon photonics. The photonic platform includes a silicon substrate with an upper surface, one or more through silicon vias (TSVs) defined through the silicon substrate, and passive alignment features in the substrate. The photonic platform includes a silicon substrate wafer with through silicon vias (TSVs) defined through the silicon substrate, and passive alignment features in the substrate for mating the photonic platform to a photonics integrated circuit. The photonic platform also includes a III-V semiconductor material structure wafer, where the III-V wafer is bonded to the upper surface of the silicon substrate and includes at least one active layer forming a light source for the photonic platform.

Abstract: An ultrafast mode-locked laser comprising circuitry configured to drive an electro-optic modulator (EOM) in the mode-locked laser with a drive waveform, the drive waveform being a phase-coherent sinusoidal waveform at a frequency equal to a repetition rate of the mode-locked laser, a phase-coherent pulsed waveform at a frequency equal to the repetition rate of the mode-locked laser, or a phase-coherent sinusoidal waveform at a frequency equal to half of the repetition rate of the mode-locked laser.

Abstract: The present invention relates to a technical field of optical communications. It relates to a dual-rate DML device and module, and a calibration method, and in particular, to a dual-rate DML device and module having a built-in signal calibration circuit, and a calibration method. According to the present invention, the signal calibration circuit is added into the device; a PD is prepositioned by means of a novel light splitting structure; a control structure for a sequence-divided multi-channel serial signal is utilized to feed back a monitoring signal to an electric driver to adjust drive current; crosstalk between backlight monitoring is reduced; and high-quality signal output under dual modulation frequencies of 25 Gbps and 28 Gbps is realized.

Abstract: A laser array includes a plurality of laser emitters arranged in a plurality of rows and a plurality of columns on a substrate that is non-native to the plurality of laser emitters, and a plurality of driver transistors on the substrate adjacent one or more of the laser diodes. A subset of the plurality of laser emitters includes a string of laser emitters that are connected such that an anode of at least one laser emitter of the subset is connected to a cathode of an adjacent laser emitter of the subset. A driver transistor of the plurality of driver transistors is configured to control a current flowing through the string.

Abstract: In order to form a reflection film on a rear end facet of a waveguide more easily than conventional, by etching a laminated structure formed on a substrate, a plurality of waveguides segmented in a lattice shape are formed, and a reflection film is formed on a surface of each of the waveguides for reflecting light in each of the waveguides.

Abstract: A laser source apparatus (100) for generating temporal dissipative cavity solitons (1) comprises an input source-device (10), being configured for providing an input light field (2), and an optical resonator device (20) with a resonator (21) having a third order optical Kerr non-linearity and being coupled with the input source device (10) for generating the cavity solitons (1) by the driving input light field (2), wherein the input source device (10) is configured for providing the input light field (2) as a pulse train of laser pulses (3). Preferably, the pulse repetition rate of the input laser pulses (2) is adapted to the free spectral range of the resonator (21) and the carrier envelope offset frequency of the input laser pulses (2) is adapted to one of the resonant frequencies of the resonator (21). Furthermore, a method of generating temporal dissipative cavity solitons (1) is described.

Abstract: A method of manufacturing a semiconductor device includes: providing a package; providing a mounting substrate; providing at least one first bonding member disposed at a position connecting at least one first metal surface of the package and at least one first metal pattern of the mounting substrate; providing a second bonding member connecting at least one second metal surface of the package and at least one second metal pattern of the mounting substrate; and heating the at least one first bonding member and the at least one second bonding member at a temperature equal to or higher than both a bonding temperature of the at least one first bonding member and a bonding temperature of the at least one second bonding member, to bond the package and the mounting substrate together.

Abstract: To provide an illumination device, a control device, and a control method enabled to perform control to cause output of each of a plurality of light sources to be constant with a more simplified temperature control circuit. There is provided an illumination device including: a plurality of light sources; a plurality of cooling units respectively provided for the light sources and respectively cooling the light sources; and a drive control unit that performs switching of control with respect to each of the light sources on the basis of a comparison between a target temperature of each of the light sources and a measured temperature of each of the light sources or an environment.

Abstract: Various embodiments of the present disclosure are directed towards a vertical cavity surface emitting laser (VCSEL) device. The VCSEL device includes a bond bump overlying a substrate. A VCSEL structure overlies the bond bump. The VCSEL structure includes a second reflector overlying an optically active region and a first reflector underlying the optically active region. A bond ring overlying the substrate and laterally separated from the bond bump. The bond ring continuously extends around the bond bump.

Abstract: A laser system including: A. a laser apparatus configured to output a pulse laser beam; B. an optical pulse stretcher including a delay optical path for expanding a pulse width of the pulse laser beam; and C. a phase optical element included in the delay optical path and having a function of spatially and randomly shifting a phase of the pulse laser beam. The phase optical element includes a plurality of types of cells providing different amounts of phase shift to the pulse laser beam and arranged irregularly in any direction.

Abstract: An optical module includes a circuit board, an optical fiber, an optical fiber monitoring chip, a laser chip, a laser driving chip and a lens assembly. A bottom surface of the lens assembly is covered above the laser chip and the optical monitoring chip. A groove is on a top surface of the lens assembly. A bottom of the groove protrudes to form a first interface and a second interface. The laser chip is configured to emit light. The first interface is configured to reflect the emitted light to obtain first reflected light. The second interface is configured to reflect a portion of the first reflected light to obtain a second reflected light and refract another portion of the first reflected light to obtain a first refracted light. The second reflected light is transmitted to the optical monitoring chip. The first refracted light is transmitted to the optical fiber.

Abstract: A laser device that is easily assembled and can be manufactured at low cost and a light-source device using the same are provided. The laser device includes a base plate portion, a semiconductor laser element placed on the base plate portion, a lid portion provided on the base plate portion, on which the semiconductor laser element is placed, and including a top plate, and a side wall portion covering a part or all of lateral sides of a space between the base plate portion and the top plate. The top plate is integrally formed with a part or all of the side wall portion.

Abstract: An optoelectronic semiconductor device and a method for manufacturing an optoelectronic semiconductor device are disclosed. In an embodiment an optoelectronic semiconductor device includes a semiconductor body comprising a first region of a first conductive type, an active region, a second region of a second conductive type and a coupling-out surface, wherein the first region, the active region and the second region are arranged along a stacking direction, wherein the active region extends from a rear surface opposite the coupling-out surface to the coupling-out surface along a longitudinal direction transverse to or perpendicular to the stacking direction, wherein the coupling-out surface is arranged plane-parallel to the rear surface, and wherein the coupling-out surface and the rear surface of the semiconductor body are produced by an etching process.