Abstract: A method of manufacturing an optical member includes: providing a conversion member and a holding member connected to the conversion member; removing a portion of the conversion member and a portion of the holding member to obtain a first surface of the conversion member and a second surface of the holding member; and heat-treating the first surface of the conversion member and the second surface of the holding member.

Abstract: A degenerate four-wave mixing (DFWM) squeezed light apparatus includes one or more pump beams, a probe beam, a vapor cell, a repump beam, and a detector. The one or more pump beams includes an input power of no greater than about 150 mW. The vapor cell includes an atomic vapor configured to interact with overlapped pump and probe beams to generate an amplified probe beam and a conjugate beam. The repump beam is configured to optically pump the atomic vapor to a ground state and decrease atomic decoherence of the atomic vapor. The detector is configured to measure squeezing due to quantum correlations between the amplified probe beam and the conjugate beam. The one or more pump beams, the probe beam, and the repump beam are configured to generate two-mode squeezed light by DFWM with squeezing of at least 3 dB below shot noise.

Abstract: A light emitting device includes: a light emitting element; and a wavelength conversion member including: a wavelength conversion part configured to convert light emitted from the light emitting element into light having a different wavelength and to output the light having the different wavelength, an enclosing part enclosing the wavelength conversion part, and a conducting layer disposed on the enclosing part and surrounding the wavelength conversion part. The conducting layer comprises ruthenium oxide.

Abstract: A quantum cascade laser includes a laser structure having an output face for emitting laser light in a first direction; and a lens having an entrance surface and a convex surface, the entrance surface receiving the laser light from the output face, and the convex surface emitting the laser light after being condensed by the lens. The laser structure includes a semiconductor substrate and a mesa waveguide provided on a first region of a principal surface of the semiconductor substrate, the mesa waveguide extending in the first direction. The lens includes a semiconductor and is provided on a second region of the principal surface of the semiconductor substrate. The first region and the second region are arranged in the first direction.

Abstract: A class of erbium-doped silicate crystals have a general chemical formula of (ErxYbyCezA(1-x-y-z))3RM3Si2O14, in which the range of x is 0.002 to 0.02, y is 0.005 to 0.1, and z is 0 to 0.15; A is one, two or three elements selected from Ca, Sr, or Ba; R is one or two elements selected from Nb or Ta; M is one or two elements selected from Al or Ga. Using one of such crystals as a gain medium and a diode laser at 940 nm or 980 nm as a pumping source, a 1.5 ?m continuous-wave solid-state laser with high output power and high efficiency, as well as a pulse solid-state laser with high energy and narrow width can be obtained.

Abstract: The light emitting device includes a substrate, and a laminated structure provided to the substrate, and including a plurality of columnar parts, wherein the columnar part includes a first semiconductor layer, a second semiconductor layer different in conductivity type from the first semiconductor layer, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, the laminated structure includes a third semiconductor layer which is connected to an opposite side to the substrate of the second semiconductor layer, and is same in conductivity type as the second semiconductor layer, the second semiconductor layer is disposed between the light emitting layer and the third semiconductor layer, the third semiconductor layer is provided with a recessed part, an opening of the recessed part is provided to a surface at an opposite side to the substrate side of the third semiconductor layer, and a diametrical size in a bottom of the recessed part is smaller than a diamet

Abstract: A semiconductor device includes: a package including: a lower surface, at least one first metal surface at an outer periphery of the lower surface, and at least one second metal surface at the lower surface at a location different from the at least one first metal surface; a mounting substrate disposed below the package and including: an upper surface, at least one first metal pattern disposed at the upper surface below the at least one first metal surface, and at least one second metal pattern disposed at the upper surface below the at least one second metal surface; a first bonding member containing a metal material and bonding the at least one first metal surface and the at least one first metal pattern; and a second bonding member containing a metal material and bonding the at least one second metal surface and the at least one second metal pattern.

Abstract: A method of producing a laser diode bar includes producing a plurality of emitters arranged side by side, emitters each including a semiconductor layer sequence having an active layer that generates laser radiation, a p-contact on a first main surface of the laser diode bar and an n-contact on a second main surface of the laser diode bar opposite the first main surface, testing at least one optical and/or electrical property of the emitters, wherein emitters in which the optical and/or electrical property lies within a predetermined setpoint range are assigned to a group of first emitters, and emitters in which the at least one optical and/or electrical property lies outside the predetermined setpoint range are assigned to a group of second emitters, and electrically contacting first emitters, wherein second emitters are not electrically contacted so that they are not supplied with current during operation of the laser diode bar.

Abstract: Disclosed herein are various embodiments for stronger and more powerful high speed laser arrays. For example, an apparatus is disclosed that comprises an active mesa structure in combination with an electrical waveguide, wherein the active mesa structure comprises a plurality of laser regions within the active mesa structure itself, each laser region of the active mesa structure being electrically isolated within the active mesa structure itself relative to the other laser regions of the active mesa structure.

Abstract: A laser projector steers a pulsed laser beam to form a pattern of stationary dots on an object, the pulsed laser beam having a periodicity determined based at least in part on a maximum allowable spacing of the dots and on a maximum angular velocity at which the beam can be steered, wherein a pulse width of the laser beam and a pulse peak power of the laser beam are based at least in part on the determined periodicity and on laser safety requirements.

Abstract: An optical source for a photolithography tool includes a source configured to emit a first beam of light and a second beam of light, the first beam of light having a first wavelength, and the second beam of light having a second wavelength, the first and second wavelengths being different; an amplifier configured to amplify the first beam of light and the second beam of light to produce, respectively, a first amplified light beam and a second amplified light beam; and an optical isolator between the source and the amplifier, the optical isolator including: a plurality of dichroic optical elements, and an optical modulator between two of the dichroic optical elements.

Abstract: A compact laser source and a single sideband modulator used therein is disclosed. The compact laser source includes a seed laser and one or more channels, with each channel generating one or more output laser beams having corresponding different wavelengths. The compact laser source can be formed in whole or in part on a single optical motherboard to thereby minimize space and power requirements. By employing the disclosed single sideband modulator, harmonics in the generated output laser beams can be minimized. The compact laser source finds application in an atom interferometer (AI) system, which may be used to measure gravity, acceleration, or rotation of the AI system.

Abstract: A surface emission laser formed of a group III nitride semiconductor includes a first conductivity type first clad layer; a first conductivity type first guide layer on the first clad layer; a light-emitting layer on the first guide layer; a second guide layer on the light-emitting layer; and a second conductivity type second clad layer on the second guide layer. The first or second guide layer internally includes voids periodically arranged at square lattice positions with two axes perpendicular to one another as arrangement directions in a surface parallel to the guide layer. The voids have a polygonal prism structure or an oval columnar structure with a long axis and a short axis perpendicular to the long axis in the parallel surface, and the long axis is inclined with respect to one axis among the arrangement directions of the voids.

Abstract: A laser apparatus according to an aspect of the present disclosure includes: a master oscillator; at least one amplifier disposed on an optical path of a first pulse laser beam output from the master oscillator; a sensor disposed on an optical path of a second pulse laser beam output from the at least one amplifier; and a laser controller. The laser controller causes the laser apparatus to perform burst oscillation based on a burst signal from an external device, and performs processing of controlling a beam parameter based on a sensor output signal obtained from the sensor in a burst duration, and processing of detecting self-oscillation light from the amplifier based on a sensor output signal obtained from the sensor in a burst stop duration.

Abstract: A laser apparatus according to the present disclosure includes an excitation light source configured to output excitation light, a laser crystal disposed on an optical path of the excitation light, a first monitor device disposed on an optical path of transmitted excitation light after having transmitted through the laser crystal to monitor the transmitted excitation light, a temperature adjustment device configured to adjust a temperature of the excitation light source to a constant temperature based on a temperature command value, and a controller configured to change the temperature command value based on a result of monitoring by the first monitor device.

Abstract: A tip/tilt/piston (“TTP”) MEMS MMA is used to provide coherent beam combination (CBC) such that the combined beam behaves as if it were emitted from a single aperture laser, but with higher brightness than can be obtained from an individual laser. Piston actuation of the mirrors is used to adjust the phase of individual amplified laser beams and maintain a zero phase difference across all of the amplified laser beams. Tip/Tilt actuation of the mirrors is used to steer the phase-adjusted amplified laser beams to form a coherent output laser beam. Additional TTP actuation can be used to oversample and superimpose Adaptive Optics correction or focusing/defocusing on the beam. A multi-spectral system may be implemented with a common MEMS MMA to produce a spectrally beam combined, multi-channel coherent laser beam.

Abstract: The invention related to single photon emission systems based on nano-diamonds. Single-photon sources have a broad range of applications in quantum communication, quantum computing and quantum metrology.

Abstract: Incoherently combining light from different lasers while maintaining high brightness is challenging using conventional fiber bundling techniques, where fibers from different lasers are bundled adjacently in a tight-packed arrangement. The brightness can be increased by tapering the tips of the bundled fibers to match a single, multi-mode output fiber, e.g., one whose core that is just wide enough to fit the input cores. This increases the brightness of the beam combining. In addition, reducing the outer diameters of the signal fiber claddings allows the signal fibers to be bundled closer together, making it possible to couple more signal fiber cores to the core of a multi-mode output fiber. Similarly, reducing the outer diameter of the pump fiber cladding and/or etching away corresponding portions of the signal fiber cladding in a pump/signal combiner makes it possible to couple more pump light into the signal fiber cladding, again increasing brightness.

Abstract: A method for producing a composite component (100) and a composite component (100) comprising a plurality of components (10), a removable sacrificial layer (4), an anchoring structure (3) and a common intermediate carrier (90) are specified. The components each have a semiconductor body (2) comprising an active zone (23), are configured to generate coherent electromagnetic radiation and are arranged on the common intermediate carrier. The sacrificial layer is arranged in a vertical direction between the intermediate carrier and the components. The anchoring structure comprises a plurality of anchoring elements (3A, 3B), wherein the anchoring structure and the sacrificial layer provide a mechanical connection between the intermediate carrier and the components.

Abstract: A laser apparatus includes an optic dispersion compensator. In another aspect, an optic (40, 45) uses phase wrapping to compress or stretch a laser pulse. A further aspect includes an apparatus and method for binary-phase compression of stretched laser pulses. In yet another aspect, a single monolithic transmissive or reflective optic (40, 45) provides compression or stretching of a laser pulse using a sinusoidal pattern for introducing binary steps. Another aspect provides a stretching or compressing optic (40, 45) for retarding a phase of multiple frequency regions of a laser pulse by a factor of 2? or less. Still another aspect employs a volume grating or multi-layer mirror including phase wrapping to obtain discontinuous phase jumps in a laser pulse compressor (45) or stretcher (40). Methods of using or making the laser apparatus are also provided.