Abstract: A transmission photocathode comprising a crystal substrate transparent to the radiation to be detected, at least one epitaxial crystalline intermediate layer having a lattice constant close to that of the detector layer and transparent to the radiation to be detected, and a p-type group III-V compound detector layer. Preferably the intermediate layer is p-type.
Type:
Grant
Filed:
June 24, 1974
Date of Patent:
January 13, 1976
Assignee:
The British Secretary of State for Defense
Inventors:
Michael Charles Rowland, David Robert Wight
Abstract: A switching device equipped with a semiconductor memory element in which the semiconductor memory element includes at least one junction region provided on a semiconductor base plate, a thin insulating film through which carriers can pass and an insulating film having a trap level, said two insulating films being disposed on the surface of said semiconductor base plate in stacked layer relationship, thereby providing a memory function. The present device is provided with this semiconductor memory element, a power supply for controlling the semiconductor memory element and means for turning on or off the controlling power supply, thus accomplishing a touch-switching device of high impedance and ensuring its operations with inexpensive cost.
Type:
Grant
Filed:
March 28, 1974
Date of Patent:
January 6, 1976
Assignee:
Matsushita Electric Industrial Co., Ltd.