Abstract: Provided is a shield member and an apparatus for growing a single crystal equipped with the shield member. Such a shield member includes: a vessel for growing the single crystal; a raw material storage part positioned at a lower portion of the vessel for growing the single crystal; a substrate supporting part, positioned above the raw material storage part to support the substrate; and a heating apparatus positioned at a an outer periphery of the vessel for growing the single crystal, thereby sublimating the raw material from the raw material storage part to grow the single crystal of the raw material onto the substrate, in which a plurality of permeation holes through which the raw material gas passes is formed. The shield member is configured such that the heat capacity thereof increases from the center to the outer periphery.

Abstract: The invention relates to a facility and a method for the stripping, de-scaling, and surface treatment of coated and uncoated materials such as metals, concrete, wood, polymers, plastics or any other type of material, by means of cryogenic fluid jets at very high pressure.

Abstract: Provided are a window cleaning apparatus and a method of controlling the same. The window cleaning apparatus including first and second cleaning units which are respectively attached on both surfaces of a window using a magnetic force to move together with each other includes a first magnetic module provided in the first cleaning unit, a second magnetic module provided in the second cleaning unit, a magnetic force detection part for detecting a magnetic force between the first and second magnetic modules, and a magnetic force control part for controlling the magnetic force between the first and second magnetic modules.

Abstract: A cleaning system comprising a tank having a wash area arranged to receive an article for cleaning; an inlet assembly mounted to a first end of the tank, through which a cleaning medium flows into the wash area; an outlet assembly having a flow control plate mounted to a second end of the tank; the flow control plate having a plurality of apertures and arranged such that the cleaning medium flows from the wash area through the apertures; the flow control plate arranged such that a total outlet area of the tank is equal to a sum of areas of the apertures; wherein the proportion of the total outlet area about the flow control plate is inversely proportional to a depth of the tank.

Abstract: A method of operating a dishwasher having a tub at least partially defining a treating chamber and at least one rotating sprayer provided in the treating chamber to determine a standstill condition of the rotating sprayer during an automatic cycle of operation that includes a rotation of the spray arm.

Abstract: A substrate cleaning system including a carrying unit having a plurality of rollers for carrying a substrate, wherein each of the rollers includes a roller shaft and a plurality of division rollers coupled to the roller shaft, and wherein a gap between adjacent ones of the roller shafts is larger than a radius of each of the division rollers; a first rinse unit located along the carrying unit and configured to apply a first cleaning liquid onto the substrate; and a cleaning unit comprising a slit nozzle and configured to apply a second cleaning liquid to the substrate after it encounters the first rinse unit.

Abstract: A window cleaning robot according to the present embodiment comprises a first cleaning unit and a second cleaning unit, which are respectively attached to and move on both surfaces of a window by magnetic force. The window cleaning robot further comprises: a first magnetic module included in the first cleaning unit; a second magnetic module included in the second cleaning unit; a magnetic force sensing part for sensing magnetic force between the first magnetic module and the second magnetic module; and a magnetic force controller for controlling the magnetic force between the first magnetic module and the second magnetic module, wherein the first magnetic module comprises a first magnet which is rotationally mounted, and a second magnet and a third magnet disposed on both sides of the first magnet, and the magnetic force controller rotates the first magnet so as to control the magnetic force between the first magnetic module and the second magnetic module.

Abstract: A base material for growing a single crystal diamond that includes at least a single crystal SiC substrate, and an iridium film or a rhodium film heteroepitaxially grown on a side of the single crystal SiC substrate where the single crystal diamond is to be grown. As a result, there is provided a base material for growing a single crystal diamond and a method for producing a single crystal diamond substrate which can grow the single crystal diamond having a large area and good crystallinity and produce a high quality single crystal diamond substrate at low cost.

Abstract: The present invention provides a method of growing an ingot of group III nitride. Group III nitride crystals such as GaN are grown by the ammonothermal method on both sides of a seed to form an ingot and the ingot is sliced into wafers. The wafer including the first-generation seed is sliced thicker than the other wafers so that the wafer including the first-generation seed does not break. The wafer including the first-generation seed crystal can be used as a seed for the next ammonothermal growth.

Abstract: A single-crystal manufacturing apparatus for manufacturing a single crystal ingot according to the Czochralski method including: a crucible that contains a raw material melt; a heater having a cylindrical heat generating portion that surrounds the crucible; a main chamber that accommodates the heater; a heater electrode that supports the heater and supplies current to the heater; and a heat insulating plate provided below the cylindrical heat generating portion of the heater, wherein the heat insulating plate is fixed to and supported by the heater electrode through an insulating stationary member, and an insulating support member is provided on an upper surface of the heat insulating plate at a position at which the insulating support member faces a lower end of the cylindrical heat generating portion. Provided is a single-crystal manufacturing apparatus that can inhibit heater deformation and prevent deterioration of heat efficiency.

Abstract: Disclosed are a liquid processing apparatus and a liquid processing method that can prevent a substrate in a processing chamber from being contaminated due to contamination attached to a nozzle supporting arm that supports a nozzle. The liquid processing apparatus of the present disclosure includes: a processing chamber having a substrate holding unit configured to hold a substrate and a cup disposed around the substrate holding unit; a nozzle configured to supply a fluid to the substrate held by the substrate holding unit; and a nozzle supporting arm configured to support the nozzle. An arm cleaning unit configured to clean the nozzle supporting arm is installed in the liquid processing apparatus.

Abstract: A method of manufacturing a semiconductor device in which an insulating film is filled between patterns etched into a workpiece structure is disclosed. The method includes cleaning etch residues residing between the etched patterns by a first chemical liquid; rinsing the workpiece structure cleaned by the first chemical liquid by a rinse liquid; and coating the workpiece structure rinsed by the rinse liquid with a coating liquid for formation of the insulating film. The cleaning to the coating are carried out within the same processing chamber such that a liquid constantly exists between the patterns of the workpiece structure.

Abstract: Chucks for mounting and retaining semiconductor wafers during processing are described, particularly suited for wafer processing involving total immersion of the wafer-chuck structure in a liquid. Chuck structures are disclosed for preventing or hindering processing chemicals from contacting and contaminating large portions of the underside of the wafer undergoing processing, limiting such chemical contact to readily cleaned, relatively small annular regions on the periphery of the wafer. Embodiments include structures with supplemental gas flows on the underside of the wafer as well as the creation of gas/liquid meniscusci to prevent chemical penetration of the wafer's underside. Methods of processing semiconductor wafers employing such chucks are also described.

Abstract: A substrate cleaning apparatus may include a substrate support member to support a substrate having a first side and a contaminated second side; a liquid carbon dioxide source; a gaseous carbon dioxide source; and one or more nozzles coupled to the liquid carbon dioxide source and to the gaseous carbon dioxide source, wherein the one or more nozzles are configured to receive liquid carbon dioxide and to discharge a first mixture of solid and gaseous carbon dioxide from the liquid carbon dioxide source to the second side of the substrate and to receive gaseous carbon dioxide and to discharge a second mixture of solid and gaseous carbon dioxide from the gaseous carbon dioxide source to the second side of the substrate. Methods of cleaning a substrate may be performed in the substrate cleaning apparatus.

Abstract: Provided is a cleaning processing device that is for a biological implant and that is capable of quickly eliminating ozone generated by ultraviolet-ray radiation after completion of ultraviolet-ray radiation towards the biological implant. The cleaning processing device for a biological implant performs cleaning processing of the biological implant by means of radiating ultraviolet rays at the surface of the biological implant and by causing ozone to contact the surface of the biological implant, and the cleaning processing device is characterized by being provided with a housing, an ultraviolet-ray radiating lamp that is disposed within the housing and that radiates ultraviolet rays at the biological implant, an ozone-removing filter disposed within the housing, and a fan that introduces the ambient gas within the housing to the ozone-removing filter, and is further characterized by the fan being driven in response to the end of cleaning processing of the biological implant.

Abstract: A method for capturing dust generated during movement of sand through a sand delivery system includes positioning an inlet at a first end of each of a plurality of conduits for collecting dust in a corresponding space surrounding a corresponding point along a conveyor. A second end of each of the plurality of conduits is coupled in fluid communication with a manifold system including at least one manifold extending generally parallel to the ground. Substantially an entire length of the conveyor, including the space corresponding to the inlet of each of the plurality of conduits, is covered with a cover for containing dust generated during movement of sand along the conveyor. Air is drawn through the manifold system and the plurality of conduits to capture dust generated during the movement of sand along the conveyor through the inlet of each of the plurality of conduits.

Abstract: A device for the regeneration of a biosensor having an immobilized and biologically active material applied to the surface of a carrier that is suitable for interacting with a substance to be analyzed. The device comprises at least one injector through which, by means of a pump, at least one solution can be applied to the surface of the carrier for the purposes of rinsing the biologically active material.

Abstract: A system for controlling silica dust generated during the transfer of frac sand from a storage container through a conveyor system includes a system of conduits having a plurality of inlets for collecting silica dust generated at selected points along the conveyor system. An air system pneumatically coupled to the system of conduits generates a negative pressure at each of the inlets to induce the collection of silica dust at the selected points along the conveyor.

Abstract: A method for measuring the moment of inertia of a washing machine drum containing a load. The drum is set in a rotation by means of a permanent magnet synchronous electric motor taking it to a first angular spin velocity. The method includes identifying a synchronization point in a periodic signal indicative of the torque provided by the synchronous electric motor at the first angular velocity. An acceleration transient of said drum with constant electromotive torque is provided by the synchronous electric motor. The method further includes interrupting the acceleration transient upon reaching a second angular velocity, acquiring the acceleration transient time duration, and processing an indirect measurement of the moment of inertia of the drum starting from a value of the torque yielded to the drum during the acceleration transient, from the transient time duration value, and from the variation of the angular velocity in the transient.

Abstract: A substrate processing method includes jetting at least one fluid from a fluid nozzle toward a rotating substrate surface while moving the fluid nozzle from a center toward a periphery of the rotating substrate. The fluid nozzle is moved from the center of the substrate to a predetermined point at a constant initial movement speed. The fluid nozzle is subsequently moved from the predetermined point at a movement speed V(r) which satisfies the following relational expression: V(r)×r?=C (constant), where V(r) represents the movement speed of the fluid nozzle when it passes a position corresponding to a position on the substrate surface at a distance “r” from the center of the substrate, and ? represents a power index.