Abstract: Methods, systems, and devices supporting an interface for refreshing non-volatile memory are described. In some examples, a host system may communicate with a memory system, where both the host system and the memory system may be included within a vehicle (e.g., an automotive system). The host system may receive an indication that the vehicle is powering down (e.g., shutting off an engine or lowering power output from a battery). The host system may switch from a first mode corresponding to a first power usage to a second mode corresponding to a second, lower power usage in response to the vehicle powering down, the second mode supporting initiation of a refresh operation at the memory device. The host system may transmit a refresh command to the memory system to refresh non-volatile memory while the vehicle is powered down if the host system is operating in the second mode of operation.

Abstract: A memory device includes a high density or 3D data memory and a 3D reference memory. The reference memory is used to generate a reference signal used to sense data in the data memory. Conversion circuitry converts signals from one memory cell or a group of memory cells in the reference memory into a reference signal. The reference signal is applied to a sense amplifier to sense data stored in a selected memory cell in the data memory.

Abstract: This application discloses a mechanism to securely store and compute with a matrix of numbers or any two-dimensional array of binary values in a storage entity called a matrix space. A matrix space is designed to store matrices or arrays of values into arrays of volatile or non-volatile memory cells with accessibility in two or three dimensions. Any row or column or line of storage elements in the storage entity is directly accessible for writing, reading, or clearing via row bit lines and column bit lines, respectively. The elements in rows of the arrays are selected or controlled for access using row address lines and the elements in columns of the arrays are selected or controlled for access using column address lines. Access control methods and mechanisms with keys to secure, share, lock, and unlock regions in the matrix space for matrices and arrays under the control of an operating system or a virtual-machine hypervisor by permitted threads and processes are also disclosed.

Abstract: A system includes a memory device with microbumps and a processing device. The processing device is operatively coupled with the memory device to perform operations. The operations include receiving information indicating a current condition of the machine learning operation while data for the machine learning operation is being transmitted using a first set of microbumps of the plurality of microbumps. Furthermore, the operations include, in response to a change in the condition of the machine learning operation, transmitting subsequent data using a second set of microbumps of the plurality of microbumps, wherein a number of microbumps included in the second set of microbumps is based on the received information.

Abstract: A refresh address generation circuit includes: a refresh control circuit and an address generator. The refresh control circuit receives multiple first refresh commands in sequence and performs multiple first refresh operations accordingly, outputs a first clock signal when the number of first refresh operations is less than m, and outputs a second clock signal when the number of first refresh operation is equal to m. The address generator is coupled to the refresh control circuit, and configured to prestore a first address and receive the first clock signal or the second clock signal, and during each first refresh operation, output an address to be refreshed in response to the first clock signal and change the first address in response to the second clock signal. The address to be refreshed includes a first address and a second address with the lowest bit opposite to that of the first address.

Abstract: According to one embodiment, a memory system includes a semiconductor memory device and a controller. The semiconductor memory device includes a first memory cell configured to store data. The controller is configured to output a first parameter and a first command. The first parameter relates to an erase voltage for a first erase operation with respect to the first memory cell. The first command instructs the first erase operation. The controller outputs the first command after outputting the first parameter to the semiconductor memory device.

Abstract: A memory array includes a plurality of bit-cells arranged as a set of rows of bit-cells intersecting a plurality of columns. The memory array also includes a plurality of in-memory-compute (IMC) cells arranged as a set of rows of IMC cells intersecting the plurality of columns of the memory array. Each of the IMC cells of the memory array includes a first bit-cell having a latch, a write-bit line and a complementary write-bit line, and a second bit-cell having a latch, a write-bit line and a complementary write-bit line, wherein the write-bit line of the first bit-cell is coupled to the complementary write-bit line of the second bit-cell and the complementary write-bit line of the first bit-cell is coupled to the write-bit line of the second bit-cell.

Abstract: A memory circuit includes a plurality of bitcells coupled to a plurality of bitlines, a plurality of wordlines, a plurality of source lines, and a control line. A first of the bitcells and a second of the bitcells are coupled to a first of the bitlines. The first bitcell is coupled to a first of the source lines. The second bitcell is coupled to a second of the source lines. The first source line is different from the second source line.

Abstract: A variable resistance memory device includes a first conductive line extending on a substrate in a first horizontal direction; a second conductive line extending on the first conductive line in a second horizontal direction perpendicular to the first horizontal direction; and a memory cell at an intersection between the first conductive line and the second conductive line, the memory cell including a selection element and a variable resistor, wherein the variable resistor includes a first variable resistance layer having a senary component represented by CaGebSbcTedAeXf, in which A and X are each a group 13 element different from each other, and 1?a?18, 13?b?26, 15?c?30, 35?d?55, 0.1?e?8, 0.1?f?8, and a+b+c+d+e+f=100.

Abstract: Apparatuses and methods for compensating for signal drop in memory. Compensating for signal drop can include applying a first signal to a terminal of a particular transistor and mirroring the first signal to a decoder replica. Compensating for signal drop can also include applying a second signal to a gate of the particular transistor, the second signal comprising a sensing signal and a signal drop on the decoder replica and sensing a state of the particular transistor.

Abstract: A synchronization circuit for an interconnection protocol, a controller and a storage device are provided. The synchronization circuit includes a first synchronization circuit module and a second synchronization circuit module. The first synchronization circuit module converts first control information of a first clock domain output by a data link layer receiver of the first device into second control information of a second clock domain, and outputs the second control information of the second clock domain. The second synchronization circuit module is coupled to the first synchronization circuit module, and converts the second control information of the second clock domain output by the first synchronization circuit module into third control information of a third clock domain to be output to a data link layer transmitter of the first device. Any two among the first, second and third clock domains are asynchronous.

Abstract: Apparatuses including a level shifter circuit are disclosed. An example apparatus according to the disclosure includes a plurality of array access control circuits and a level shifter circuit. The plurality of array access control circuits receive an access control signal and a respective plurality of section enable signals. An array access control circuit of the plurality of array access control circuits provides a section access control signal responsive to the access control signal when a respective section enable signal is in an active state. The level shifter circuit receives a control signal and provides an access control signal responsive to the first signal. A first logic level of the control signal is represented by a first power supply voltage and a first logic level of the access control signal is represented by a second power supply voltage greater than the first power supply voltage.

Abstract: Systems, apparatuses, and methods related to a flip-on-precharge disable operation are described herein. In an example, a method can include receiving a command to perform a precharge operation on a set of memory cells in a memory device. The memory device can include a plurality of sets of memory cells corresponding to respective portions of an array of memory cells of the memory device. The method can further include accessing one or more sets of bits in a mode register. The one or more sets of bits in the mode register indicate address locations of the plurality of sets of memory cells to disable the flip on precharge operation. The method can further include performing the precharge operation on the set of memory cells. The flip on precharge operation associated with the precharge operation can be disabled for those sets of the plurality of sets of memory cells whose address locations are in the mode register.

Abstract: An arbiter is operable to pick commands from a command queue for dispatch to a memory. The arbiter includes a traffic throttle circuit for mitigating excess power usage increases in coordination with one or more additional arbiters. The traffic throttle circuit includes a monitoring circuit and a throttle circuit. The monitoring circuit is for measuring a number of read and write commands picked by the arbiter and the one or more additional arbiters over a first predetermined period of time. The throttle circuit, responsive to a low activity state, limits a number of read and write commands issued by the arbiter during a second predetermined period of time.

Abstract: Provided herein may be a memory device and a method of operating the same. The memory device may include a plurality of memory cell strings, a peripheral circuit configured to, using a plurality of read voltages, perform a read operation that reads data that is stored in a selected memory cell that is included in a selected memory cell string, and an operation controller configured to control the peripheral circuit to perform the read operation by using a first read voltage, a first potential adjustment operation, and the read operation by using a second read voltage that is lower than the first read voltage, wherein the first potential adjustment operation is an operation that applies a first turn-on voltage to unselected source select lines that are coupled to unselected memory cell strings for a first period and thereafter applies a ground voltage to the unselected source select lines.

Abstract: A memory such as a 3D NAND array, having a page buffer having page buffer cells coupled to bit lines has a search word input such as a search word buffer coupled to word lines. A circuit, such as string select gates, is provided to connect a selected set of memory cells in the array to the page buffer. The page buffer includes sensing circuitry configured to apply a match sense signal to a latch in a plurality of storage elements for a stored data word and an input search word. Logic circuitry uses storage elements in the plurality of storage elements of the page buffer to accumulate the match sense signals output by the sensing circuitry over a sequence matching a plurality stored data words to one or more input search words. A match for a search is based on a threshold and the accumulated match sense signals.

Abstract: Disclosed herein are molecular storage systems and methods of reading molecules that include integrity markers. A molecular storage system may comprise read hardware configured to read molecules storing data, and at least one processor coupled to the read hardware. The processor is configured to determine whether a molecule being read by the read hardware includes an expected integrity marker, and, in response to a determination that the molecule being read by the read hardware does not include the expected integrity marker, instruct the read hardware to abandon a read operation associated with the molecule being read by the read hardware. The partial readback can be placed in a buffer and used in an assembly process only if an intact molecule is not available.

Abstract: A resistive random access memory structure includes a first inter-layer dielectric layer; a bottom electrode disposed in the first inter-layer dielectric layer; a capping layer disposed on the bottom electrode and on the first inter-layer dielectric layer; and a through hole disposed in the capping layer. The through hole partially exposes a top surface of the bottom electrode. A variable resistance layer is disposed within the through hole. A top electrode is disposed within the through hole and on the variable resistance layer. A second inter-layer dielectric layer covers the top electrode and the capping layer.

Abstract: A nonvolatile memory device having a multi-stack memory block includes: a memory cell array divided into a plurality of memory stacks disposed in a vertical direction; and a control circuit configured to perform a channel voltage equalization operation of the plurality of memory stacks, wherein inter-stack portions are between the plurality of memory stacks, and a channel hole passes through the word lines of each of the plurality of memory stacks. The control circuit determines, as inter-stack word lines, some word lines adjacent to the inter-stack portions among the word lines of each of the plurality of memory stacks and differently controls setup time points for applying a pass voltage, or recovery time points for applying a ground voltage, to the inter-stack word lines, according to sizes of the channel hole of the inter-stack word lines.

Abstract: The present application provides a sense amplifier, a memory, and a control method. The sense amplifier includes: an amplification module, configured to amplify a voltage difference between a bit line and a reference bit line when the sense amplifier is at an amplification stage; and a controlled power module, connected to the amplification module, and configured to: determine a drive parameter according to a rated compensation voltage range between the bit line and the reference bit line, and supply power to the amplification module according to the drive parameter, so as to control the amplification module to pull a compensation voltage between the bit line and the reference bit line to be a rated compensation voltage at an offset cancellation stage, where the rated compensation voltage is within the rated compensation voltage range.