Abstract: Two pulse sequences are delivered by two lasers. A rotating segmented mirror having one or more reflective areas and one or more transmissive areas is rotated synchronously with the delivery of the pulse sequences to transmit pulses from one sequence, and to reflect pulses from the other sequence at intervals.

Abstract: A simple and high-reliability constitution provides a solid-state laser system that allows a high-output, long-pulse-width laser beam to be obtained. A solid-state laser system that includes a solid-state laser medium 1, a light source 2 for pumping the solid-state laser medium 1, two reflecting mirrors 3 and 4 for flanking the solid-state laser medium 1, thereby constituting a laser resonator, is constituted in such a manner that a virtual-mirror plane 5 is defined in the space between the solid-state laser medium 1 and the reflecting mirror 4; a lens 6 is provided between the virtual-mirror plane 5 and the reflecting mirror 4; and, by means of the forward and backward paths along the route from the virtual-mirror plane to the reflecting mirror by way of the lens, the virtual-mirror plane in the forward path and the virtual-mirror plane in the backward path are made in an optically conjugated relationship with each other.

Abstract: Output power of light emitted from a data transmission light source is determined based upon forward voltage, forward current, ambient temperature and a factor specific to the manner in which the light source is mounted. Output power is determined with sufficient accuracy to control operation of the data transmission light source for compliance with eye safety and transmission protocol requirements without use of a complex lens and monitor diode.

Abstract: There is provided a laser. The laser includes a substrate, a first Bragg reflector layer sequence on the substrate, an active layer sequence on the first Bragg reflector layer sequence, a second Bragg reflector layer sequence on the active layer sequence, and a voltage source for applying a voltage via the active layer sequence to generate a beam of laser radiation. At least one of the first Bragg reflector layer sequence, the active layer sequence or the second Bragg reflector layer sequence includes a layer having a periodic pattern positioned in a direction of the beam to stabilize a polarization of the beam.

Abstract: A semiconductor laser device comprising: a first cladding layer of a first conductivity type; an active layer provided on the first cladding layer and having a quantum well structure; an overflow blocking layer of a second conductivity type provided on the overflow blocking layer. The active layer includes a region having an impurity concentration is 3×1017 cm?3 or more and having a thickness of 30 nm or less between the overflow blocking layer and a well layer in the active layer closet to the overflow blocking layer.

Abstract: A method, an apparatus, and a module for producing dual beam from a single laser diode provide for means of simultaneously pumping two individual gain media with orthogonal polarizations. A beam splitter splits the emissive laser beam into two portions based on the polarization. A polarization control element or mechanism adjusts the polarization and the intensity ratio of the separated beam portions. Applications to monolithic microchip lasers include generating new wavelengths based on intracavity beam combining and mixing.

Abstract: A conductive element with a lateral oxidation barrier is provided for the control of lateral oxidation processes in semiconductor devices such as lasers, vertical cavity surface emitting lasers and light emitting diodes. The oxidation barrier is formed through modification of one or more layers which initially were receptive to oxidation. The quality of material directly below the oxidation barrier may be preserved. Related applications include the formation of vertical cavity surface emitting lasers on non-GaAs substrates and on GaAs substrates.

Abstract: The present invention is to provide a vertical cavity surface emitting laser diode (VCSEL) that has a functional distributed Bragg reflector (DBR) comprised of less number of pairs of reflective layers. The VCSEL of the invention include a lower DBR, an upper DBR and an active layer arranged between the upper and lower DBRs. The upper DBR is comprised of a plurality of pairs including GaAs layers and aluminum oxide layers, thus the GaAs layers and the aluminum oxide layers are alternately stacked to each other. Since the refractive index of the aluminum oxide (Al2O3) is 1.67 at 1.3 ?m and that of the GaAs is 3.51, the difference of these refractive index becomes 1.85, which is far greater than the combination of the AlAs and the GaAs, thereby decreasing the number of pairs for the DBR.

Abstract: The invention relates to a short-pulse laser device (11) with a preferably passive mode coupling. Said device comprises a resonator (12) which contains a laser crystal (14) in addition to several mirrors (M1-M7, OC) that define a long resonator arm (17) and a short resonator arm (16), one (M1) of said mirrors forming a pump beam coupling-in mirror and another (OC) forming a laser beam output coupler and comprising a multiple reflection telescope (18) that increases the length of the resonator and is allocated to the resonator arms (16, 17). Said telescope is constructed using mirrors (25, 26), in order to reflect a laser beam (15) that is coupled into the space between them back and forth several times, prior to being decoupled back into the other resonator, whereby sequential eccentric reflection points (1 to 8; 1? to 8?) on the mirrors (25, 26) are offset in relation to one another.

Abstract: A wavelength conversion module according to the present invention includes an external resonator, a semiconductor laser module and a wavelength conversion device for converting a wavelength of light output from the semiconductor laser module into a shorter wavelength. This wavelength conversion device includes at least one of a nonlinear crystal for generating SFG (Sum-frequency Generation) light and a nonlinear crystal for generating SHG (Second Harmonic Generation) light. Each of the SFG generating element and the SHG generating element of the wavelength conversion device may have a periodically-poled ridge-waveguide structure or a periodically-poled proton-exchanged-waveguide structure.

Abstract: Provided is a millimeter-wave band frequency optical oscillator that can be used as an oscillation frequency signal source for a millimeter-wave forwarded to wireless subscribers from a base station of a millimeter-wave wireless subscriber communication system for a next generation (e.g., fifth generation) ultra-high speed wireless internet service. A pair of an optical fiber amplifier and an optical fiber grating mirror is connected to each of input/output ports of a loop mirror in parallel, so that a dual mode laser resonator is formed which can make simultaneous oscillation in two laser modes suitable for each wavelength. Accordingly, it is possible to obtain a light source that is modulated to a ultra-high frequency (over 60 GHz) by a beat phenomenon between the two laser modes.

Abstract: A modulated saturable absorber controlled laser. The laser includes an active medium; a saturable absorber material operationally coupled to the medium to serve as a passive Q switch; and an energy source disposed external to the medium for apply energy to the absorber. In particular embodiments, the energy source is a diode laser and focusing optics are included between the diode laser and the absorber. Modulation of the gain at the photon round trip time in the laser resonator causes a mode-locked laser output. A dichroic beamsplitter is included in this embodiment for directing energy to the absorber. In an alternative embodiment, the diode laser is a quasi-monolithic diode laser assembly ring.

Abstract: A method includes a scheme for trimming and compensation for a laser emitter in a fiber optic link. Data models of laser performance are provided and used to determine a base power level. It is then confirmed that the base power level is satisfactory. If necessary, adjustments are made to a set of user specified performance parameters until a satisfactory base power level is obtained. Then a table or relation of temperatures and associated current and target average optical power values is generated such that they can be used to regulate laser emitter performance over a range of temperature. Additionally, fiber optic links capable of trimming and compensation are also disclosed.

Abstract: A light-emitting device is capable of oscillating in a convex-whispering gallery mode. The lighting-emitting device includes a PIN-type semiconductor including a p-type distributed Bragg reflector, an active region and an n-type distributed Bragg reflector formed on a substrate by an epitaxial growth, wherein the PIN-type semiconductor having a hole with a predetermined diameter formed thereon, and an electrode connected to a region around the hole for applying a current to the hole. Further disclosed are a method for manufacturing the light-emitting device and an array of light-emitting devices.

Abstract: Apparatus and methods for high fidelity quantum communication over long communication channels even in the presence of significant loss in the channels are disclosed. The invention employs laser manipulation of quantum correlated atomic ensembles using linear optic components, optical sources of low intensity pulses, beam splitters, and single-photon detectors requiring only moderate efficiencies. The invention provides fault-tolerant entanglement generation and connection, using a sequence of steps that each provide built-in entanglement purification and that are each resilient to the realistic noise. The invention relies upon collective excitation in atomic ensembles rather than single particle excitations in atomic ensembles so that communication efficiency scales polynomially with the total length of a communication channel.

Abstract: An array of surface emitting laser diodes has a series electrical connection of laser diodes. Junction isolation is used to isolate laser diodes in the array.

Abstract: An improved resonator and optical cavity is adapted for use with a chemical laser that has a nozzle upstream of the resonator that emits a gain medium in a flow direction, and a pressure-recovery system downstream of the resonator. The optical resonator comprises first and second optical elements that are spaced apart from one another along an optical axis. Each of the optical elements has a selected geometry and a selected optical transmissivity to permit transmissive outcoupling of a beam of laser radiation from the resonator, the outcoupled beam being transmitted about the optical axis. The transmissivity and geometry of each optical element is selected to define an unstable region between the optical elements and around the optical axis, and a stable region in a region surrounding the unstable region and spaced apart from the optical axis.

Abstract: A DBR semiconductor laser is controlled in an image projecting apparatus, which includes the DBR laser having a phase and DBR region, a light wavelength converting device for converting fundamental-wave light emitted from the DBR laser into second harmonic wave light, an optical deflector for scanning the second harmonic wave in a one or two-dimensional manner, and a modulating portion for modulating the DBR laser. Coefficient calculating and wavelength adjusting steps are performed within a non-drawing time. The coefficient calculating step calculates at least one coefficient in a relationship between a DBR current to be injected into the DBR region and a phase current to be injected into the phase region for continuously shifting the wavelength of the fundamental-wave light. The wavelength adjusting step changes DBR current injected into the DBR region and phase current injected into the phase region based on the relationship.

Abstract: A single-mode grating-outcoupled surface emitting (GSE) semiconductor laser architecture is provided. This architecture enables high speed modulation of the GSE laser, which is accomplished by only varying the relative phase of counter propagating waves in the outcoupler grating region of the lasing cavity.

Abstract: Aspects of the present invention are directed to the use of optical gain structures that include alternating layers of gain medium and transparent heat conductors in which the gain medium itself functions as a correction optic. The gain medium changes to an optimum or desired shape because of the thermal changes occurring as the materials of the optical gain structure(s) reach a desired optical output condition. At the desired optical output conditions, the gain medium conforms to a desired shape. The desired shape may be, for example, that of an optical surface of a transparent heat conductor. By designing the initial shape of the gain medium such that the physical contact with the transparent heat conductor is maximized at the desired optical output conditions, conductive heat transfer between the gain medium and heat conductor(s) is maximized at the desired optical output condition.