Abstract: A semiconductor laser apparatus includes multiple light emitting points, and a simple ridge stripe structure for each of the light emitting points. At least one of the light emitting points is disposed at a location that is 0% to 15% of the width of a substrate of the apparatus from the center, in the width direction, of the substrate.

Abstract: A phase array of oxide confined VCSELs and a method for forming the phase array of oxide confined VCSELs is described. VCSELs in the array are designed to be simultaneously addressed such that the output of multiple VCSELs can be used to increase the light intensity at a point. In applications where beam coherence from the VCSEL array is desirable, high gain coupling regions break the continuity of the oxide wall surrounding each VCSEL aperture. The high gain coupling regions connect adjacent VCSELs in the VCSEL array thereby allowing mode coupling between adjacent lasers and the output of a coherent beam of light.

Abstract: Multi-component barrier layers include formation of a GaAs layer and at least one adjacent GaAsN layer. The resulting multi-component barrier layer shape can provide enhanced (extended) offset for capture of holes and enhanced electrons. Other benefits include: a small amount of strain compensation; poorer spatial overlap of higher confined states reducing parasitics at high bias, with some small effect on the lowest confined states. Quantum wells and associated barriers layers can be grown with combinations of gallium, (Ga), arsenic, (As), nitrogen (N), aluminum (Al), antimony (Sb), phosphorous (P) and/or indium (In) placed within or about a typical GaAs substrate to achieve long wavelength VCSEL performance, e.g., with wavelengths over 1200 nm. Layers of strained quantum well material can also be supported by mechanical stabilizers.

Abstract: A laser device is disclosed which stabilizes impedance at laser drive initiation, and in which an oscillation at low current, a high reaction speed, a low noise, and the like are achieved. A semiconductor laser device includes first and second conductive type semiconductor layers, an active layer, and first and second electrodes. The second electrode comprises an ohmic electrode and a pad electrode. The first electrode is formed on the same planar side of the first conductive type semiconductor layer as the second electrode, and is disposed in the same direction as the pad electrode with respect to the ohmically connected region. The second conductive type semiconductor layer is set to a width that can secure light confinement on both sides of the ohmically connected region.

Abstract: A tuneable laser is disclosed, including a gain section with first and second comb reflectors to one side thereof. The two reflectors each provide combs with substantially uniform spacings, the spacings differing as between the combs. Each comb reflector can be tuned so as to shift the reflective peaks of the combs, thus allowing alignment of a single reflective peak at a chosen wavelength which is the same in both combs, forming a supermode. This supermode has an intensity greater than the threshold of the gain section and thus the laser produces an output at that selected wavelength.

Abstract: A laser apparatus (100) for performing the laser machining operation by condensing the laser light output from a laser oscillator (3) is disclosed. A laser output value calculation unit calculates a laser output value (L1) based on a command value (L0) issued to a laser oscillator (2). A temperature change estimating unit (31) estimates the temperature change or the temperature (Te) of specified component element(s) (7a, 7b) of the laser apparatus based on the elapsed time (t) and the laser output value calculated by the laser output value calculation unit. An adjusting unit (32) adjusts the conditions for controlling the laser or the conditions for laser machining based on the temperature change or the temperature of the specified component element estimated by the temperature change estimating unit. A stable laser machining operation is performed without a temperature sensor. The laser output value (L1) may be measured by a laser power sensor (5).

Abstract: The present invention relates generally to optoelectronic devices, and particularly to a submount, pedestal, and bond wire assembly for a transistor outline package. A bottom surface of the submount is connected to a top surface of the pedestal. Each bond wire in a bond wire set is connected to a position on the top surface of the submount, and to a position on the signal line. The signal line is positioned a first distance from the position on the top surface of the submount and a second distance from the pedestal. The submount is sized such that a portion of the bottom and the top surface of the submount extends beyond the top surface of the pedestal such that the first distance is less than the second distance.

Abstract: A single mode high power vertical cavity surface emitting laser (VCSEL) using photonic crystals. A photonic crystal is included in at least one mirror layer of a VCSEL. The reflectivity of the photonic crystal is dependent on the wavelength and incident angle of the photons. The photonic crystal can be formed such that the VCSEL lases at a single mode. Because a single mode is generated, the aperture of the VCSEL can be enlarged to increase the power that is generated by the VCSEL for that mode. The photonic crystal can be used with or without DBR layers. The photonic crystal, in one example, forms an external cavity.

Abstract: A laser controlling method can generate laser of stable laser pulses, and eliminate useless time from a machining procedure. The method uses a gain medium and a Q-switch, and emits exciting light to the gain medium, thereby setting the Q-switch in a continuous oscillation mode, and prepares a given Q-switch pause time before a laser pulse is generated. When the continuous oscillation is kept going longer than a given time, the control method sets a Q-switch pause time for obtaining a first laser pulse to be different from a Q-switch pause time for obtaining a second laser pulse and onward.

Abstract: An optically pumped semiconductor laser includes an active ring-resonator having two or more optically pumped semiconductor (OPS) structures each including a mirror-structure and a multilayer gain-structure. The mirror-structures serve as fold mirrors for the resonator axis. An optically nonlinear crystal may be included in the ring-resonator for generating second-harmonic radiation from fundamental radiation generated in the resonator. Another optically nonlinear crystal may be provided for generating third-harmonic or fourth-harmonic radiation from the second-harmonic radiation. In one example, including a third-harmonic generating crystal, a passive ring-resonator partially coaxial with the active ring-resonator is provided for circulating second-harmonic radiation to provide resonant amplification of the second-harmonic radiation for enhancing third-harmonic conversion.

Abstract: A compact, high repetition rate, extreme ultraviolet/soft x-ray laser and method for generating such radiation are described. Excitation of the gaseous or vaporous lasing medium is achieved by discharging energy stored in a solid-dielectric capacitive device through a capillary channel containing the medium. By reducing the inductance of the discharge apparatus, excitation of the laser medium can be achieved without the use of Marx generators. Neon-like Ar atom laser pulses at 46.9 nm having energies of about 13 ?J are generated at repetition rates up to 12 Hz. Between 2 and 3×104 laser shots can be generated using a single capillary. Such a source of intense, short-wavelength radiation can be used for applications which include surface characterization of materials, high resolution imaging and printing, photochemistry and photophysics, laser ablation, characterization of x-ray optics, and dense plasma diagnostics.

Abstract: A surface emitting semiconductor laser includes a laminate of semiconductor layers emitting multimode laser light, and a block member blocking light of a specific mode among the multimode laser light emitted from the laminate.

Abstract: An apparatus is described in which the temperature of a semiconductor laser (or other device) can be set to a desired value by using the heat generated by the laser itself in conjunction with an adjustable thermal impedance heat sink to effect the desired temperature rise.

Abstract: An optically pumped micro-cavity laser has an optical gain cavity and an optical resonant cavity. The optical gain cavity has a gain medium disposed that generates an optical output in response to an optical pump signal. The optical resonant cavity has an electro-optic material in which is disposed an electrode structure with first and second apertures disposed generally parallel to an optical signal propagating within the electro-optic material. Electrically conductive material is disposed within the apertures coupling an electrical signal to the optical cavity. Optically reflective material is disposed on the opposing surfaces of the micro-cavity laser and between the optical gain cavity and the optical resonant cavity.

Abstract: A photonic-crystal fiber provides dispersion compensation in a soliton fiber laser. The anomalous dispersion provided by the photonic-crystal fiber permits construction of a femtosecond fiber laser at 1 ?m wavelength without prisms or diffraction gratings. The laser produces ˜100-fs pulses with 1 nJ energy, and is a major step toward environmentally-stable all-fiber devices at 1 ?m.

Abstract: There are provided a bi-directional transceiver module and a method for driving the same. The bi-directional transceiver module includes a 1.3 ?m Distributed Bragg Reflection Laser Diode (DBR LD) including an active layer which performs light-emission in response to a light at 1.3 ?m and a DBR mirror formed near the active layer. The DBR mirror is formed to prevent an upstream signal emerging from the 1.3 ?m DBR LD from being deleted by a PD. A monitoring PD and a PD for detecting an optical signal are integrated and mounted behind the DBR mirror using a butt-joint method. The 1.3 ?m DBR LD, the monitoring PD, and the PD for detecting the optical signal are electrically isolated by insulated areas. To drive the bi-directional transceiver module, a forward bias (+) is applied to a p-electrode formed on the 1.3 ?m DBR LD, a backward bias (?) is applied to p-electrodes formed on the monitoring PD and the PD for detecting the optical signal, and a n-electrode as a common electrode is grounded.

Abstract: An improved monoblock laser cavity is made by elongating the Optical parametric oscillation (OPO) cavity. This can be accomplished by changing the coatings on the OPO material and Q-switch and by elongating the OPO cavity to approximately 2 to 3 times the OPO crystal length. The increase in the length of the OPO cavity will improve the beam divergence of the laser.

Abstract: The invention relates to an optoelectronic arrangement having at least one optoelectronic emission component and a monitor component operatively coupled to the emission component to detect at least some radiation radiated by the emission component. A driver circuit of the arrangement is electrically connected to the emission component and the monitor component and a carrier substrate. In this case, the driver circuit is formed as a circuit integrated into the carrier substrate. The monitor component is likewise integrated into the carrier substrate and the emission component is formed as a separate structural part and is arranged on the carrier substrate.

Abstract: Wavelength control and stabilization of a laser is achieved by a practical, inexpensive, and accurate technique adapted for most optical transmission system applications by a method involving a laser characterization phase and a laser wavelength control and stabilization phase. This technique is applicable to both single mode lasers and multimode lasers. It is especially useful in those applications where the desired laser output power can vary over a wide range, including relatively low power above the lasing threshold.

Abstract: An unipolar organic injection laser in which electrically-stimulated intraband transitions result in lasing. An active region includes at least one organic injector layer and at least one organic emitter layer. Each organic emitter layer has a first energy level and a second energy level on a same side of an energy gap defined by a conduction band and a valance band. Charge carriers are injected through the organic injector layer into the first energy level of the organic emitter layer when a voltage is applied across active region. The difference in energy between the first and second energy levels produces radiative emissions when charge carriers transition from the first energy level to the second energy level. Population inversion is maintained between the first and second energy levels, producing stimulated emission and lasing.