Patents Examined by Nathan K Ford
  • Patent number: 11031252
    Abstract: A chamber door, such as an etch chamber door may be heated during etch processing to, e.g., prevent etching by-products from adhering to the etch chamber door. Such heating of the etch chamber door, however, can impact the processing parameters and result in non-uniform processing, such as non-uniform etching characteristics across a semiconductor wafer, for instance. An insulator, such as an insulating film covering surfaces of the heated door, can reduce or eliminate transmission of heat from the door to a work piece such as a semiconductor wafer and this reduce or eliminate the non-uniformity of the process results.
    Type: Grant
    Filed: January 13, 2017
    Date of Patent: June 8, 2021
    Assignee: Taiwan Semiconductor Manufacturing Compant, Ltd.
    Inventors: Meng-Je Chuang, Wan-Chun Kuan, Yi-Wei Chiu, Tzu-Chan Weng
  • Patent number: 11003080
    Abstract: A method and apparatus disclosed herein apply to processing a substrate, and more specifically to a method and apparatus for improving photolithography processes. The apparatus includes a chamber body, a substrate support disposed within the chamber body, and an electrode assembly. The substrate support has a top plate disposed above the substrate support, a bottom plate disposed below the substrate support, and a plurality of electrodes connecting the top plate to the bottom plate. A voltage is applied to the plurality of electrodes to generate an electric field. Methods for exposing a photoresist layer on a substrate to an electric field are also disclosed herein.
    Type: Grant
    Filed: September 21, 2018
    Date of Patent: May 11, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Kartik Ramaswamy, Srinivas D. Nemani
  • Patent number: 11004663
    Abstract: Embodiments described herein provide an apparatus for improving deposition uniformity by improving plasma profile using a tri-cut chamber liner. The apparatus also includes a lid assembly having a split process stack for reducing downtime and a bottom heater support for more efficient heating of chamber walls.
    Type: Grant
    Filed: March 6, 2014
    Date of Patent: May 11, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Juan Carlos Rocha-Alvarez, Dale R. Du Bois, Amit Kumar Bansal
  • Patent number: 10998174
    Abstract: A dry etching equipment includes a topography simulator and a control section. The topography simulator controls an amount of deposition species incident upon a sidewall to be processed in accordance with a wafer opening ratio and a solid angle of a local pattern, the deposition amount being represented by a product of a reaction product flux and the solid angle. The control section compares a database obtained by the topography simulator with an actual measured value detected from an etching condition during dry etching to calculate a correction value for etching process, and indicates the correction value to an etching chamber in the dry etching equipment. The dry etching equipment corrects in real time a parameter for the etching process conducted in the etching chamber.
    Type: Grant
    Filed: December 10, 2008
    Date of Patent: May 4, 2021
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Nobuyuki Kuboi, Tetsuya Tatsumi
  • Patent number: 10934622
    Abstract: A substrate processing apparatus includes a heat storage part on which a substrate is mounted, a tray including the heat storage part, a substrate transfer part including a rotary shaft and a rotating plate supported by the rotary shaft and being configured such that the tray can be mounted on the rotating plate, a plurality of bases arranged circumferentially around the rotary shaft; and a heater provided for each of the bases.
    Type: Grant
    Filed: January 9, 2018
    Date of Patent: March 2, 2021
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Teruo Yoshino, Naofumi Ohashi, Tadashi Takasaki, Shun Matsui
  • Patent number: 10916456
    Abstract: A substrate liquid processing apparatus includes a placing unit which places thereon a substrate; a liquid processing unit which processes the substrate by immersing the substrate in a processing liquid with a posture in which a plate surface of the substrate is perpendicular to a horizontal direction; a transfer unit which transfers the substrate between the placing unit and the liquid processing unit; and a rotating unit which rotates the substrate, after being subjected to a first processing by the liquid processing unit, around an axis perpendicular to the plate surface, and in a direction different from that when the first processing is performed. Further, the transfer unit transfers the substrate, after being subjected to the first processing, to the rotating unit and transfers the rotated substrate to the liquid processing unit. The liquid processing unit performs a second processing by immersing the rotated substrate in the processing liquid.
    Type: Grant
    Filed: November 30, 2017
    Date of Patent: February 9, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Hironobu Hyakutake
  • Patent number: 10847391
    Abstract: A transfer chamber for semiconductor device manufacturing includes (1) a plurality of sides that define a region configured to maintain a vacuum level and allow transport of substrates between processing chambers, the plurality of sides defining a first portion and a second portion of the transfer chamber and including (a) a first side that couples to two twinned processing chambers; and (b) a second side that couples to a single processing chamber; (2) a first substrate handler located in the first portion of the transfer chamber; (3) a second substrate handler located in the second portion of the transfer chamber; and (4) a hand-off location configured to allow substrates to be passed between the first portion and the second portion of the transfer chamber using the first and second substrate handlers. Method aspects are also provided.
    Type: Grant
    Filed: February 14, 2014
    Date of Patent: November 24, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Nir Merry, Michael Robert Rice, Sushant S. Koshti, Jeffrey C. Hudgens
  • Patent number: 10832926
    Abstract: An ion implantation apparatus, system, and method are provided for transferring a plurality of workpieces between vacuum and atmospheric pressures, wherein an alignment mechanism is operable to align a plurality of workpieces for generally simultaneous transportation to a dual-workpiece load lock chamber. The alignment mechanism comprises a characterization device, an elevator, and two vertically-aligned workpiece supports for supporting two workpieces. First and second atmospheric robots are configured to generally simultaneously transfer two workpieces at a time between load lock modules, the alignment mechanism, and a FOUP. Third and fourth vacuum robots are configured to transfer one workpiece at a time between the load lock modules and a process module.
    Type: Grant
    Filed: December 27, 2016
    Date of Patent: November 10, 2020
    Assignee: Axcelis Technologies, Inc.
    Inventors: Joseph Ferrara, Robert J. Mitchell
  • Patent number: 10822698
    Abstract: A substrate processing apparatus includes a robot arm for conveying a substrate, a conveyance chamber containing the robot arm, and an adjacent processing unit adjacent to the conveyance chamber, the adjacent processing unit processing a substrate therein. The conveyance chamber is constructed so as to be able to have a first shape for providing a predetermined space between the conveyance chamber and the adjacent processing unit, and a second shape for increasing the internal space of the conveyance chamber by making the distance between the conveyance chamber and the adjacent processing unit smaller than when the first shape is formed.
    Type: Grant
    Filed: August 31, 2015
    Date of Patent: November 3, 2020
    Assignee: ASM IP Holding B.V.
    Inventor: Teruhide Nishino
  • Patent number: 10804081
    Abstract: An edge ring configured to surround an outer periphery of a substrate support in a plasma processing chamber wherein plasma is generated and used to process a substrate is disclosed, the substrate support comprising a base plate, a top plate, an elastomer seal assembly between the base plate and the top plate, and an elastomer seal configured to surround the elastomer seal assembly. The edge ring includes an upper inner surface having an edge step directed towards an interior portion of the edge ring and arranged to extend from an outer periphery of a top surface of the top plate to an outer periphery of an upper surface of the base plate, a lower inner surface, an outer surface, a lower surface extending from the lower inner surface to the outer surface, and a top surface extending from the outer surface to the upper inner surface.
    Type: Grant
    Filed: December 20, 2013
    Date of Patent: October 13, 2020
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Ambarish Chhatre, David Schaefer, Keith Gaff
  • Patent number: 10793949
    Abstract: The present disclosure relates to a substrate processing apparatus and a substrate processing method using the same, and more particularly, to a substrate processing apparatus that is capable of improving a flow of a process gas that is participated in a substrate processing process and a substrate processing method using the same.
    Type: Grant
    Filed: October 10, 2016
    Date of Patent: October 6, 2020
    Assignee: EUGENE TECHNOLOGY CO., LTD.
    Inventors: Jun Jin Hyon, Sung Tae Je, Byoung Gyu Song, Yong Ki Kim, Kyong Hun Kim, Chang Dol Kim, Yang Sik Shin, Jae Woo Kim
  • Patent number: 10767261
    Abstract: The invention relates to a device for vacuum coating substrates in a vacuum chamber, comprising an elongated evaporator array having a plurality of evaporator elements arranged along a longitudinal axis and a first substrate carrier unit which is associated with the evaporator array and has a first pylon that can be rotated about a first axis and contains retaining means for substrates, wherein an angular offset of less than 10° is present between the longitudinal axis and the first rotational axis. The device is characterised in that at least one second substrate carrier unit is provided, which is associated with the evaporator array and has a second pylon that can be rotated about a second axis and contains retaining means for substrates, wherein an angular offset of less than 10° is present between the longitudinal axis and the second rotational axis.
    Type: Grant
    Filed: July 22, 2011
    Date of Patent: September 8, 2020
    Assignee: Leybold Optics GmbH
    Inventors: Torsten Schmauder, Gunter Kern
  • Patent number: 10741367
    Abstract: A method of processing a substrate is provided. The method includes loading a substrate in a processing chamber. The substrate is supported on a bottom electrode and the processing chamber includes a top electrode opposing the bottom electrode. The method includes placing a plasma containment structure over a selected portion of the surface of the substrate to define a plasma containment region of the selected portion of the surface of the substrate. Then, injecting at least one process gas into the plasma containment region and biasing the top electrode and the bottom electrode. The method further includes exhausting process byproducts from the plasma containment region and moving the plasma containment region relative to the substrate to selectively passes over the entire surface of the substrate.
    Type: Grant
    Filed: November 3, 2015
    Date of Patent: August 11, 2020
    Assignee: Lam Research Corporation
    Inventor: Eric Hudson
  • Patent number: 10707106
    Abstract: A wafer-processing apparatus includes: multiple discrete units of reactors disposed on the same plane; a wafer-handling chamber having a polygonal shape having multiple sides corresponding to and being attached to the multiple discrete units, respectively, and one additional side for a load lock chamber; a load lock chamber attached to the one additional side of the wafer-handling chamber; multiple discrete gas boxes for controlling gases corresponding to and being connected to the multiple discrete units, respectively; and multiple discrete electric boxes for controlling electric systems corresponding to and being detachably connected to the multiple discrete units, respectively, wherein the gas boxes and the electric boxes are arranged alternately as viewed from above under the multiple discrete units, and the electric boxes can be pulled out outwardly without being disconnected from the corresponding units so that sides of the gas boxes are accessible.
    Type: Grant
    Filed: March 3, 2016
    Date of Patent: July 7, 2020
    Assignee: ASM IP Holding B.V.
    Inventors: Yukihiro Mori, Takayuki Yamagishi
  • Patent number: 10685814
    Abstract: A system for processing substrates having an atmospheric front end and a vacuum main frame, primary processing chambers attached to the main frame, a loadlock positioned between the front end and the main frame, and at least one secondary processing chamber attached to the loadlock.
    Type: Grant
    Filed: November 25, 2015
    Date of Patent: June 16, 2020
    Assignee: ADVANCED MICRO-FABRICATION EQUIPMENT INC. CHINA
    Inventors: Heng Tao, Tuqiang Ni, Qian Wang
  • Patent number: 10669630
    Abstract: A layer-forming device includes a feeding mechanism that feeds a substrate during layer formation, an injector unit having a plurality of injectors that supplies a layer-forming gas to the substrate, along a feeding passage of the substrate, and a reactant supply unit which generates a reactant. The injector unit supplies the reactant through gaps between the injectors to a layer of the layer-forming component. A substrate opposing surface of the injector includes a layer-forming gas supply slot through which the layer-forming gas is output, first gas exhaust slots that suck an excess gas such as the layer-forming gas, the first gas exhaust slots being provided on both sides of the layer-forming gas supply slot in a feeding direction of the substrate, and inert gas supply slots that supply an inert gas provided on far sides of the respective first gas exhaust slots away from the layer-forming gas supply slot.
    Type: Grant
    Filed: February 21, 2014
    Date of Patent: June 2, 2020
    Assignee: MITSUI E&S MACHINERY CO., LTD.
    Inventors: Nozomu Hattori, Naomasa Miyatake, Yasunari Mori
  • Patent number: 10669633
    Abstract: Embodiments of the invention involve a technique and process for coating fine diameter, single strand wire of long continuous lengths with Parylene. The special fixture design and process allows for ultra thin (as thin as 0.2 micron), pore free, coatings. The advantages of this technology allow for wire products that offer minimal intrusion, superior routing and winding characteristics, and high heat and chemical resistance. The coating process can also be used for other types of material.
    Type: Grant
    Filed: February 2, 2015
    Date of Patent: June 2, 2020
    Assignee: AEROQUEST RESEARCH GROUP LLC
    Inventors: Thomas Lawrence, Nick Stahl, Jay Ahling
  • Patent number: 10597782
    Abstract: A device for coating one or more yarns by a vapor deposition method, the device including a treatment chamber defining a first and a second treatment zone in which at least one yarn is to be coated by performing a vapor deposition method, the first and second zones being separated by a wall and the first zone surrounding the second zone, or being superposed on the second zone; a conveyor system to transport the at least one yarn through the first and second zones; a first injector device to inject a first treatment gas phase into the first zone and a first removal device configured to remove the residual first gas phase from the first zone; and a second injector device configured to inject a second treatment gas phase into the second zone, and a second removal device configured to remove the residual second gas phase from the second zone.
    Type: Grant
    Filed: November 17, 2016
    Date of Patent: March 24, 2020
    Assignee: SAFRAN CERAMICS
    Inventors: Emilien Buet, Simon Thibaud, Adrien Delcamp, Cédric Descamps
  • Patent number: 10497557
    Abstract: The present disclosure relates to a method and apparatus for performing a dry plasma procedure, while mitigating internal contamination of a semiconductor substrate. In some embodiments, the apparatus includes a semiconductor processing tool having a dry process stage with one or more dry process elements that perform a dry plasma procedure on a semiconductor substrate received from an input port. A wafer transport system transports the semiconductor substrates from the dry process stage to a wet cleaning stage located downstream of the dry process stage. The wet cleaning stage has one or more wet cleaning elements that perform a wet cleaning procedure to remove contaminants from a surface of the semiconductor substrates before the semiconductor substrate is provided to an output port, thereby improving wafer manufacturing quality.
    Type: Grant
    Filed: May 20, 2015
    Date of Patent: December 3, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shao-Yen Ku, Tsai-Pao Su, Wen-Chang Tsai, Chia-Wen Li, Yu-Yen Hsu
  • Patent number: 10395957
    Abstract: A substrate processing unit 14 includes processing modules 2 each performing a process on a substrate, and a substrate transfer device 121 is provided between a mounting unit 11 and the processing modules. A parameter storage unit 3 stores sets of transfer parameter 33 where an operating speed of the substrate transfer device corresponds to a processing number of substrates per a unit time. A parameter selecting unit 4 compares a processing number of substrates per a unit time determined based on a recipe 31 corresponding to the process, with those corresponding to the transfer parameters and selects a transfer parameter corresponding to the minimum processing number of substrates among the processing numbers of substrates equal to or larger than that determined based on the recipe. A transfer control units 151 to 153 control the substrate transfer device based on a set value of the selected transfer parameter.
    Type: Grant
    Filed: July 23, 2014
    Date of Patent: August 27, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Tomohiro Kaneko