Abstract: A layer-forming device includes a feeding mechanism that feeds a substrate during layer formation, an injector unit having a plurality of injectors that supplies a layer-forming gas to the substrate, along a feeding passage of the substrate, and a reactant supply unit which generates a reactant. The injector unit supplies the reactant through gaps between the injectors to a layer of the layer-forming component. A substrate opposing surface of the injector includes a layer-forming gas supply slot through which the layer-forming gas is output, first gas exhaust slots that suck an excess gas such as the layer-forming gas, the first gas exhaust slots being provided on both sides of the layer-forming gas supply slot in a feeding direction of the substrate, and inert gas supply slots that supply an inert gas provided on far sides of the respective first gas exhaust slots away from the layer-forming gas supply slot.

Abstract: Embodiments of the invention involve a technique and process for coating fine diameter, single strand wire of long continuous lengths with Parylene. The special fixture design and process allows for ultra thin (as thin as 0.2 micron), pore free, coatings. The advantages of this technology allow for wire products that offer minimal intrusion, superior routing and winding characteristics, and high heat and chemical resistance. The coating process can also be used for other types of material.

Abstract: A device for coating one or more yarns by a vapor deposition method, the device including a treatment chamber defining a first and a second treatment zone in which at least one yarn is to be coated by performing a vapor deposition method, the first and second zones being separated by a wall and the first zone surrounding the second zone, or being superposed on the second zone; a conveyor system to transport the at least one yarn through the first and second zones; a first injector device to inject a first treatment gas phase into the first zone and a first removal device configured to remove the residual first gas phase from the first zone; and a second injector device configured to inject a second treatment gas phase into the second zone, and a second removal device configured to remove the residual second gas phase from the second zone.

Abstract: The present disclosure relates to a method and apparatus for performing a dry plasma procedure, while mitigating internal contamination of a semiconductor substrate. In some embodiments, the apparatus includes a semiconductor processing tool having a dry process stage with one or more dry process elements that perform a dry plasma procedure on a semiconductor substrate received from an input port. A wafer transport system transports the semiconductor substrates from the dry process stage to a wet cleaning stage located downstream of the dry process stage. The wet cleaning stage has one or more wet cleaning elements that perform a wet cleaning procedure to remove contaminants from a surface of the semiconductor substrates before the semiconductor substrate is provided to an output port, thereby improving wafer manufacturing quality.

Abstract: An installation for chemical vapor infiltration of porous preforms of three-dimensional shape extending mainly in a longitudinal direction, the installation comprising a reaction chamber of parallelepiped shape, the side walls of the reaction chamber including heater means and a plurality of stacks of loader devices arranged in the reaction chamber. Each loader device being in the form of an enclosure of parallelepiped shape provided with support elements for receiving porous preforms for infiltrating.

Abstract: A substrate processing unit 14 includes processing modules 2 each performing a process on a substrate, and a substrate transfer device 121 is provided between a mounting unit 11 and the processing modules. A parameter storage unit 3 stores sets of transfer parameter 33 where an operating speed of the substrate transfer device corresponds to a processing number of substrates per a unit time. A parameter selecting unit 4 compares a processing number of substrates per a unit time determined based on a recipe 31 corresponding to the process, with those corresponding to the transfer parameters and selects a transfer parameter corresponding to the minimum processing number of substrates among the processing numbers of substrates equal to or larger than that determined based on the recipe. A transfer control units 151 to 153 control the substrate transfer device based on a set value of the selected transfer parameter.

Abstract: A dual section module with mass flow controllers, for processing wafers, includes: dual process sections integrated together; at least one mass flow controller (MFC) each shared by the dual process sections and provided in a gas line branching into two gas lines, at a branching point, connected to the respective interiors of the dual process sections and arranged symmetrically between the dual process sections; and at least one mass flow controller (MFC) each unshared by the dual process sections and provided in a gas line connected to the interior of each dual process section.

Abstract: A holding assembly for retaining a deposition ring about a periphery of a substrate support in a substrate processing chamber, the deposition ring comprising a peripheral recessed pocket with a holding post. The holding assembly comprises a restraint beam capable of being attached to the substrate support, the restraint beam comprising two ends, and an anti-lift bracket. The anti-lift bracket comprises a block comprising a through-channel to receive an end of a restraint beam, and a retaining hoop attached to the block, the retaining hoop sized to slide over and encircle the holding post in the peripheral recessed pocket of the deposition ring.

Abstract: A deposition apparatus according to an exemplary embodiment of the present invention includes a plurality of reactors; a plurality of gas supply units connected to the plurality of reactors; and a plurality of plasma supply units connected to the plurality of reactors. Each of the plasma supply units includes: a plasma power supplier; a plurality of diodes connected to the plasma power supplier; and a reverse voltage driver connected to the plurality of diodes through respectively corresponding switches.

Abstract: Improved methods and apparatus for forming thin-film layers of semiconductor material absorber layers on a substrate web. According to the present teachings, a semiconductor layer may be formed in a multi-zone process whereby various layers are deposited sequentially onto a moving substrate web.

Abstract: Multi-zone reactors, systems including a multi-zone reactor, and methods of using the systems and reactors are disclosed. Exemplary multi-zone reactors include a movable susceptor assembly and a moveable plate. The movable susceptor assembly and movable plate can move vertically between reaction zones of a reactor to expose a substrate to multiple processes or reactants.

Abstract: A semiconductor manufacturing apparatus includes a chamber, a view port window on a sidewall of the chamber and configured to receive an optical emission spectroscopy (OES); and an air distributor located between the view port window and an inner space of the chamber. The air distributor includes a hollow region aligned with the transparent window and configured to generate an air curtain in the hollow region to isolate the view port from the inner space.

Abstract: Disclosed is a vapor deposition apparatus comprising an adsorption apparatus disposed in a vapor deposition cavity, wherein the adsorption apparatus comprising: a plurality of magnetic blocks arranged in a matrix disposed on a side of a substrate to be vapor deposited away from a metal mask plate, and a towing apparatus for adjusting each of the magnetic blocks to move up and down relative to the substrate to be vapor deposited. Such a vapor deposition apparatus may cause the metal mask plate to closely fit the substrate to be vapor deposited, such that a correct pattern will be formed when sub-pixel units are vapor deposited, and cause the magnetic fields of all the magnetic blocks to tend to be consistent, avoiding affecting the above-mentioned pattern by a deformation of the metal mask plate due to the inhomogeneity of the magnetic fields.

Abstract: An apparatus and method for processing a substrate in a processing system containing a deposition chamber, a treatment chamber, and an isolation region, separating the deposition chamber from the treatment is described herein. The deposition chamber deposits a film on a substrate. The treatment chamber receives the substrate from the deposition chamber and alters the film deposited in the deposition chamber with a film property altering device. Processing systems and methods are provided in accordance with the above embodiment and other embodiments.

Abstract: An infiltration device comprises a heating room, a rotary tray, a rotary bracket, a material box, an elevating mechanism and a transmission device, wherein the heating room has an annular groove, and the rotary tray is arranged below an opening end at a lower end of the heating room; the rotary bracket is installed on the rotary tray; the material box is arranged on the rotary bracket; the rotary tray and the material box can move upward and downward under the action of the elevating mechanism; the rotary bracket can spin in the annular groove and revolve around a central axis of the rotary tray under the action of the transmission device. The infiltration method provided by the invention comprises the steps of charging, vacuum-pumping, high temperature infiltrating, cooling, discharging, etc.

Abstract: Embodiments of the present disclosure generally relate to a batch processing chamber that is adapted to simultaneously cure multiple substrates at one time. The batch processing chamber includes multiple processing sub-regions that are each independently temperature controlled. The batch processing chamber may include a first and a second sub-processing region that are each serviced by a substrate transport device external to the batch processing chamber. In addition, a slotted cover mounted on the loading opening of the batch curing chamber reduces the effect of ambient air entering the chamber during loading and unloading.

Abstract: A method and apparatus disclosed herein apply to processing a substrate, and more specifically to a method and apparatus for improving photolithography processes. The apparatus includes a chamber body, a substrate support disposed within the chamber body, and an electrode assembly. The substrate support has a top plate disposed above the substrate support, a bottom plate disposed below the substrate support, and a plurality of electrodes connecting the top plate to the bottom plate. A voltage is applied to the plurality of electrodes to generate an electric field. Methods for exposing a photoresist layer on a substrate to an electric field are also disclosed herein.

Abstract: An apparatus for in situ fabrication of multilayer heterostructures is provided comprising a first vacuum chamber adapted for atomic layer deposition and comprising a first stage docking assembly configured to dock a detachable stage configured to support a substrate; a second vacuum chamber adapted for ultra-high vacuum physical or chemical vapor deposition and comprising a second stage docking assembly configured to dock the detachable stage; a load lock vacuum chamber between the first and second vacuum chambers and comprising a third stage docking assembly configured to dock the detachable stage, the load lock vacuum chamber coupled to the first vacuum chamber via a first shared valve and coupled to the second vacuum chamber via a second shared valve; and a substrate transport vacuum chamber comprising a substrate transfer device, the substrate transfer device configured to detachably couple to the detachable stage and to transfer the substrate supported by the detachable stage in situ between the first v

Abstract: A semiconductor substrate processing system includes a chamber that includes a processing region and a substrate support. The system includes a top plate assembly disposed within the chamber above the substrate support. The top plate assembly includes first and second sets of plasma microchambers each formed into the lower surface of the top plate assembly. A first network of gas supply channels are formed through the top plate assembly to flow a first process gas to the first set of plasma microchambers to be transformed into a first plasma. A set of exhaust channels are formed through the top plate assembly. The second set of plasma microchambers are formed inside the set of exhaust channels. A second network of gas supply channels are formed through the top plate assembly to flow a second process gas to the second set of plasma microchambers to be transformed into a second plasma.

Abstract: A substrate processing tool includes N substrate processing stations arranged in a first transfer plane around a central cavity, where N is an integer greater than one. At least one of the N substrate processing stations is configured to process the substrate. M substrate processing stations are arranged in a second transfer plane around the central cavity, where M is an integer greater than one. The second transfer plane is arranged parallel to and above the first transfer plane. An upper tool portion includes the M substrate processing stations and a first portion of the N substrate processing stations. A rotatable lower tool portion rotates relative to the upper tool portion. A second portion of the N substrate processing stations rotates with the rotatable lower tool portion.