Abstract: An element that is configured to bond to another element is disclosed. A first element that can include a first plurality of contact pads on a first surface. The first plurality of contact pads includes a first contact pad and a second contact pad that are spaced apart from one another. The first and second contact pads are electrically connected to one another for redundancy. The first element can be prepared for direct bonding. The first element can be bonded to a second element to form a bonded structure. The second element has a second plurality of contact pads on a second surface. At least one of the second plurality of contact pads is bonded and electrically connected to at least one of the first plurality of contact pads.

Abstract: A semiconductor memory device including: a stack structure including a plurality of layers that are vertically stacked on a substrate, each of the plurality of layers including a word line, a channel layer, and a data storage element electrically connected to the channel layer; and a bit line that vertically extends on one side of the stack structure, wherein the word line includes: a first conductive line that extends in a first direction; and a gate electrode that protrudes in a second direction from the first conductive line, the second direction intersecting the first direction, wherein the channel layer is on the gate electrode, and wherein the bit line includes a connection part electrically connected to the channel layer.

Abstract: A semiconductor package and a manufacturing method are provided. The semiconductor package includes a carrier substrate, a through substrate via (TSV), a first conductive pattern, and an encapsulated die. The TSV penetrates through the carrier substrate and includes a first portion and a second portion connected to the first portion, the first portion includes a first slanted sidewall with a first slope, the second portion includes a second slanted sidewall with a second slope, and the first slope is substantially milder than the second slope. The first conductive pattern is disposed on the carrier substrate and connected to the first portion of the TSV. The encapsulated die is disposed on the carrier substrate and electrically coupled to the TSV through the first conductive pattern.

Abstract: A package structure including a first semiconductor die, a second semiconductor die, first conductive pillars and a first insulating encapsulation is provided. The first semiconductor die includes a semiconductor substrate, an interconnect structure and a first redistribution circuit structure. The semiconductor substrate includes a first portion and a second portion disposed on the first portion. The interconnect structure is disposed on the second portion, the first redistribution circuit structure is disposed on the interconnect structure, and the lateral dimension of the first portion is greater than the lateral dimension of the second portion. The second semiconductor die is disposed on the first semiconductor die. The first conductive pillars are disposed on the first redistribution circuit structure of the first semiconductor die. The first insulating encapsulation is disposed on the first portion.

Abstract: An electronic device includes a carrier having at least one bonding pad, a plurality of electronic elements disposed on the carrier and one of the electronic elements including a substrate and at least one connecting terminal disposed between the substrate and the carrier. The electronic elements are electrically connected to the at least one bonding pad via the at least one connecting terminal.

Abstract: An organic interposer includes dielectric material layers embedding redistribution interconnect structures, package-side bump structures located on a first side of the dielectric material layers, and die-side bump structures located on a second side of the dielectric material layers. A gap region is present between a first area including first die-side bump structures and a second area including second die-side bump structures. Stress-relief line structures are located on, or within, the dielectric material layers within an area of the gap region in the plan view. Each stress-relief line structures may include straight line segments that laterally extend along a respective horizontal direction and is not electrically connected to the redistribution interconnect structures. The stress-relief line structures may include the same material as, or may include a different material from, a metallic material of the redistribution interconnect structures or bump structures that are located at a same level.

Abstract: A semiconductor device includes a dummy fin structure disposed over a substrate, a dummy gate structure disposed over a part of the dummy fin structure, a first interlayer dielectric layer in which the dummy gate structure is embedded, a second interlayer dielectric layer disposed over the first interlayer dielectric layer, and a resistor wire formed of a conductive material and embedded in the second interlayer dielectric layer. The resistor wire overlaps the dummy gate structure in plan view.

Abstract: Provided are a semiconductor wafer, a semiconductor device, and a gas concentration measuring device having a size reduced by reducing warpage to be even smaller than the sizes that can be achieved by conventional techniques. The semiconductor wafer includes: a wafer substrate, a semiconductor stacked portion formed on a first surface of the wafer substrate, the semiconductor stacked portion being capable of emitting or receiving infrared light of 2 ?m to 10 ?m; and an optical filter formed on a second surface of the wafer substrate that is opposite to the first surface of the wafer substrate. The thickness Twaf [?m] of the wafer substrate and the thickness Topt [?m] of the optical filter satisfy the relations of Topt?4 and Topt?0.000053×Twaf2.0488.

Abstract: A manufacturing method of a semiconductor package includes the following steps. A redistribution structure is formed. An encapsulated semiconductor device is provided on a first side of the redistribution structure, wherein the encapsulated semiconductor device comprising a semiconductor device encapsulated by an encapsulating material. A substrate is bonded to a second side of the redistribution structure opposite to the first side. The redistribution structure includes a plurality of vias connected to one another through a plurality of conductive lines and a redistribution line connected to the plurality of vias, and, from a top view, an angle greater than zero is included between adjacent two of the plurality of conductive lines.

Abstract: A semiconductor device (A1) includes a semiconductor layer having a first face with a trench (3) formed thereon and a second face opposite to the first face, a gate electrode (41), and a gate insulating layer (5). The semiconductor layer includes a first n-type semiconductor layer (11), a second n-type semiconductor layer (12), a p-type semiconductor layer (13), and an n-type semiconductor region (14). The trench (3) is formed so as to penetrate through the p-type semiconductor layer (13) and to reach the second n-type semiconductor layer (12). The p-type semiconductor layer (13) includes an extended portion extending to a position closer to the second face of the semiconductor layer than the trench (3) is. Such structure allows suppressing dielectric breakdown in the gate insulating layer (5).

Abstract: The present disclosure relates to a package substrate comprising: a substrate having opposing first surface and second surface; at least one vent hole extending through the first surface and the second surface of the substrate, the vent hole comprising at least a long-strip hole.

Abstract: Connection terminals of a semiconductor module are disposed appropriately in accordance with the connection destination of the semiconductor module. A semiconductor module which includes at least one semiconductor element is mounted on a first surface of a main substrate, which has the first surface on which a first circuit element is mounted and a second surface on which a second circuit element is mounted. A plurality of connection terminals include a first connection terminal group composed of a plurality of first connection terminals to be connected to the first circuit element via the main substrate, and a second connection terminal group composed of a plurality of second connection terminals to be connected to the second circuit element via the main substrate. The first connection terminal group is disposed on the outer peripheral side with respect to the second connection terminal group.

Abstract: Disclosed are semiconductor devices and their fabricating methods. The semiconductor device comprises first and second active patterns, a first channel pattern including first semiconductor patterns, a second channel pattern including second semiconductor patterns, a gate electrode on the first and second channel patterns, and a gate dielectric layer between the gate electrode and the first and second channel patterns. The gate electrode includes a first inner gate electrode between the first semiconductor patterns, a second inner gate electrode between the second semiconductor patterns, and an outer gate electrode outside the first and second semiconductor patterns. The first and second inner gate electrodes are on bottom surfaces of uppermost first and second semiconductor patterns. The outer gate electrode is on top surfaces and sidewalls of the uppermost first and second semiconductor patterns. The first and second inner gate electrodes have different work functions.

Abstract: A packaged semiconductor includes a substrate and a first component disposed on the substrate. The package includes an underfill that is dispensed under and around the first component. The package also includes a second component disposed on the substrate adjacent to the first component that provides a border to the underfill.

Abstract: A semiconductor product includes a layer of semiconductor die package molding material embedding a semiconductor die having a front surface and an array of electrically-conductive bodies such as spheres or balls around the semiconductor die. The electrically-conductive bodies have front end portions around the front surface of the semiconductor die and back end portions protruding from the layer of semiconductor die package molding material. Electrically-conductive formations are provided between the front surface of the semiconductor die and front end portions of the electrically-conductive bodies left uncovered by the package molding material. Light-permeable sealing material can be provided at electrically-conductive formations to facilitate inspecting the electrically-conductive formations via visual inspection through the light-permeable sealing material.

Abstract: An apparatus for manufacturing packaged semiconductor devices includes a lower plate having package platforms and clamp guide pins to align an upper plate with the lower plate, and a boat tray having windows configured to receive package devices, and a plurality of upper plates configured to be aligned to respective windows and respective package platforms. Clamping force can be applied by fasteners configured to generate a downward force upon the upper plate. Package devices on the platforms are thus subjected to a clamping force. Load cells measure the clamping force so adjustments can be made.

Abstract: The application discloses a bonding method, a display backplane and a system for manufacturing the display backplane. The method includes: providing a substrate, and forming a plurality of first metal bumps on the substrate; providing a transfer device to transfer the plurality of the first metal bumps to a TFT substrate to form a plurality of pairs of metal pads on the TFT substrate, wherein each pair of the metal pads include two of the first metal bumps; and providing a plurality of LED flip chips, and transferring the plurality of LED flip chips to the TFT substrate by using the transfer device to bond electrodes of each of the LED flip chips to one pair of the metal pads respectively.

Abstract: A multichip module (MCM) power package includes a multilayer routable leadframe substrate (MRLF) substrate including a first and a second RLF layer. A multilayer extending via extends from the first into the second RLF layer. A first vertical FET has a side flipchip attached to a bottom side of the second RLF. A second vertical FET has a side flipchip attached to a bottom side of the second RLF layer, and contacts the multilayer extending via. A controller integrated circuit (IC) is flipchip attached a top side of the MRLF substrate at least partially over the first vertical FET. A top mold compound is on a top side of the MRLF substrate lateral to the controller IC that is lateral to a metal pad on the multilayer extending via. A bottom side of the first and second vertical FET are exposed by a bottom mold compound layer.

Abstract: A package structure is provided. The package structure includes a redistribution structure over a substrate, a semiconductor die over the redistribution structure and electrically coupled to the substrate, and an underfill material over the substrate and encapsulating the redistribution structure and the semiconductor die. The underfill material includes an extension portion overlapping a corner of the semiconductor die and extending into the substrate.

Abstract: Disclosed are interconnection structures, semiconductor packages including the same, and methods of fabricating the same.