Abstract: The present invention provides an electron beam apparatus for evaluating a sample surface, which has a primary electro-optical system for irradiating a sample with a primary electron beam, a detecting system, and a secondary electro-optical system for directing secondary electron beams emitted from the sample surface by the irradiation of the primary electron beam to the detecting system.

Abstract: A monochromator (1) for a charged particle optics, in particular, for electron microscopy, comprises at least one first deflection element (2, 3) with an electrostatic deflecting field (2?, 3?) for generating a dispersion (4) in the plane (5) of a selection aperture (6) to select charged particles of a desired energy interval (7) and at least one second deflection element (8, 9) with an electrostatic deflecting field (8?, 9?) which eliminates the dispersion (4) of the at least one first deflecting field (2?, 3?). A radiation source (17) comprises such a monochromator (1).

Abstract: In a method controlling an ion detector, one or more ion input signals are received at the ion detector. A data point indicative of an intensity of at least one of the received ion input signals is acquired. Asynchronously with acquiring the data point, a drive voltage applied to the ion detector is regulated to operate the ion detector at a gain optimal for the intensity of at least one of the received ion input signals. An ion detector for implementing the method is also provided.

Abstract: A microfabricated electron phase shift element is used for modifying the phase characteristics of an electron beam passing though its center aperture, while not affecting the more divergent portion of an incident beam to selectively provide a ninety-degree phase shift to the unscattered beam in the back focal plan of the objective lens, in order to realize Zernike-type, in-focus phase contrast in an electron microscope. One application of the element is to increase the contrast of an electron microscope for viewing weakly scattering samples while in focus. Typical weakly scattering samples include biological samples such as macromolecules, or perhaps cells. Preliminary experimental images demonstrate that these devices do apply a ninety degree phase shift as expected.

Abstract: This invention is referred to a digital technetium Tc-99m generator obtained by incorporating devices to allow the control, verification and recording of all the operations performed by the generator. The invention includes a conventional traditional generator Mo-99/Tc-99m, using either a dry or wet column, such as the ones commercially available for use in nuclear medicine. The invention also includes an electronic sensor of elution; an eluted activity measurement sensor; and a device to measure the nuclear quality of the eluted Tc-99m. There is an electronic memory with information for the user regarding: Generator No., Lot No., activity, calibration and expiration dates. The invention also includes a communication interface, whether via RS232, USB, parallel Port or any other input-output port of a PC; a control, and user interface software.

Abstract: An ion implanting apparatus is provided, which prevents a failure of the processing object caused by a scattering of the deposited particles of the ion species on an inner surface of a through hole of a member that forms a beam geometry of an ion beam. Since at least an inner surface of the through hole 222 of the member 220 having a through hole and being capable of forming a beam geometry is coated with a thermal spraying film, unwanted deposition of the ion species on the inner surface of the through hole 222 is inhibited. Moreover, since a deposition film generated on the surface of the thermal spraying film has an unoriented poly-crystalline structure that exhibits extremely higher inter-layer adhesiveness, a failure of the processing object caused by a scattering of the particles peeled-off from the deposition layer is prevented.

Abstract: A pattern inspection method includes: irradiating a first region of a surface of a sample having a pattern to be inspected with a charged particle beam; acquiring a first two-dimensional image showing a state of the surface of the sample; searching for a pattern similar to a previously prepared reference image within the first two-dimensional image; when the pattern similar to the reference image is not detected in the first two-dimensional image, irradiating a second region of the surface of the sample that has not been irradiated with a charged particle beam; acquiring a second two-dimensional image showing a state of the surface of the sample; and searching a pattern similar to the reference image within the second two-dimensional image.

Abstract: An on-chip micro-fluidic device (10) fabricated using a semiconductor material. The device has a micro-fluidic channel or chamber (14) defined within the material and one or more monolithically integrated semiconductor lasers (12) operate to form an optical trap in the channel or chamber (14).

Abstract: A system and method for analyzing and imaging a sample containing molecules of interest combines modified MALDI mass spectrometer and SNOM devices and techniques, and includes: (A) an atmospheric-pressure or near-atmospheric-pressure ionization region; (B) a sample holder for holding the sample; (C) a laser for illuminating said sample; (D) a mass spectrometer having at least one evacuated vacuum chamber; (E) an atmospheric pressure interface connecting said ionization region and said mass spectrometer; (F) a scanning near-field optical microscopy instrument comprising a near-field probe for scanning the sample; a vacuum capillary nozzle for sucking in particles which are desorbed by said laser, the nozzle being connected to an inlet orifice of said atmospheric pressure interface; a scanner platform connected to the sample holder, the platform being movable to a distance within a near-field distance of the probe; and a controller for maintaining distance information about a current distance between said probe

Abstract: A technique executes autofocus adjustment stably even when a plurality of patterns or foreign matter capable of being imaged only by a specific detector are included independently. Such an image as a concavo-convex image having a weak contrast can be picked up. The technique can automatically focus such an image even when it is difficult to find a focus position in the image. A scanning electron microscope includes a plurality of detectors for detecting secondary signals from a specimen when irradiated with an electron beam, and a calculation unit for combining the signals obtained from the detectors. At least two of the detectors are provided to be symmetric with respect to the electron beam. The focus of the electron beam is adjusted based on the signals of the detectors or on a signal corresponding to a combination of the signals.

Abstract: A method of analyzing biological material by exposing the biological material to a recognition element, that is coupled to a mass tag element, directing an ion beam of a mass spectrometer to the biological material, interrogating at least one region of interest area from the biological material and producing data, and distributing the data in plots.

Abstract: Light resonant with an electronic excitation level of nanosize objects is projected onto a plurality of closely located nanosize objects, such as quantum dots, quantum dot pairs, and a carbon nanotube, in a collection of nanosize objects is disclosed. In so doing, to control the mechanical interaction induced between the nanosize objects, the projected resonant light is changed in polarization. This enables the collective manipulation of the nanosize objects.

Abstract: A semiconductor wafer inspection tool and a semiconductor wafer inspection method capable of conducting an inspection under appropriate conditions in any one of an NVC (Negative Voltage Contrast) mode and a PVC (Positive Voltage Contrast) mode is provided. Primary electrons 2 are irradiated onto a wafer to be inspected 6 and the irradiation position thereof is scanned in an XY direction. Secondary electrons (or reflected electrons) 10 from the wafer to be inspected 6 are controlled by a charge control electrode 5 and detected by a sensor 11. An image processor converts a detection signal from the sensor 11 to a detected image, compares the detected image with a predetermined reference image, judges defects, an overall control section 14 selects inspection conditions from recipe information for each wafer to be inspected 6 and sets a voltage to be applied to the charge control electrode 5.

Abstract: The present invention is directed to a generator apparatus for separating a daughter gallium-68 radioisotope substantially free of impurities from a parent gernanium-68 radioisotope, including a first resin-containing column containing parent gernanium-68 radioisotope and daughter gallium-68 radioisotope, a source of first eluent connected to said first resin-containing column for separating daughter gallium-68 radioisotope from the first resin-containing column, said first eluent including citrate whereby the separated gallium is in the form of gallium citrate, a mixing space connected to said first resin-containing column for admixing a source of hydrochloric acid with said separated gallium citrate whereby gallium citrate is converted to gallium tetrachloride, a second resin-containing column for retention of gallium-68 tetrachloride, and, a source of second eluent connected to said second resin-containing column for eluting the daughter gallium-68 radioisotope from said second resin-containing column.

Abstract: Techniques for providing optical ion beam metrology are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for controlling beam density profile, the apparatus may include one or more camera systems to capture at least one image of an ion beam and a control system coupled to the one or more camera systems to control a beam density profile of the ion beam. The control system may further include a dose profiler to provide information to one or more ion implantation components in at least one of a feedback loop and a feedforward loop to improve dose and angle uniformity.

Abstract: A method of separating ions includes providing a FAIMS analyzer region for separating ions, the FAIMS analyzer region in fluid communication with an ionization source and with an ion detecting device. The method further includes affecting a gas composition within a first portion of the FAIMS analyzer region to be different from a gas composition within a second portion of the FAIMS analyzer region. The establishment of a gas composition gradient within the FAIMS analyzer region enhances ion focusing and ion transport efficiency.

Abstract: One embodiment relates to a solid-state charged-particle detector. The detector includes a PIN diode and a conductive coating on the front-side of the PIN diode, wherein the front-side receives incident charged particles to be detected. In addition, the detector includes a metal layer on the backside of the PIN diode and electrical connections to the metal layer and to the conductive coating. Other embodiment are also disclosed.

Abstract: The inventions relates to a lithography system in which an electronic image pattern is delivered to a exposure tool for projecting an image to a target surface, said exposure tool comprising a control unit for controlling exposure projections, said control unit at least partly being included in the projection space of the said exposure tool, and being provided with control data by means of light signals, said light signals being coupled in to said control unit by using a free space optical interconnect comprising modulated light beams that are emitted to a light sensitive part of said control unit, wherein the modulated light beams are coupled in to said light sensitive part using a holed mirror for on axis incidence of said light beams on said light sensitive part, the hole or, alternatively, holes of said mirror being provided for passage of said exposure projections.

Abstract: A method of processing ions in a quadrupole rod set is provided, comprising a) establishing and maintaining a two-dimensional substantially quadrupole field having a quadrupole harmonic with amplitude A2 and a selected higher order harmonic with amplitude Am radially confining ions having Mathieu parameters a and q within a stability region defined in terms of the Mathieu parameters a and q; c) adding an auxiliary excitation field to transform the stability region into a plurality of smaller stability islands defined in terms of the Mathieu parameters a and q; and, d) adjusting the two-dimensional substantially quadrupole field to place ions within a selected range of mass-to-charge ratios within a selected stability island in the plurality of stability islands.

Abstract: A charged-particle beam lithography apparatus includes a charged-particle beam irradiation unit, a deflector which deflects the charged particle beam, a stage which disposes thereon a workpiece for pattern writing and a plurality of marks being regularly laid out in an entire area substantially equal to a pattern writing region of the workpiece, a measurement unit for measuring positions of the marks on the stage through scanning of the charged-particle beam by the deflector, a coefficient calculation unit which uses an approximation equation for correction of a position deviation occurring due to a hardware configuration of the apparatus to perform the fitting of a position deviation amount of each mark by a coordinate system of the apparatus to thereby calculate more than one coefficient of the fitting-applied approximation equation, and a storage unit which performs overwrite-storing whenever the coefficient calculation unit calculates the coefficient.