Patents Examined by Patrick S Ott
-
Patent number: 11974512Abstract: A preparation method of a silicon-based molecular beam heteroepitaxy material, a memristor, and use thereof are provided. A structure of the heteroepitaxy material is obtained by allowing a SrTiO3 layer, a La0.67Sr0.33MnO3 layer, and a (BaTiO3)0.5—(CeO2)0.5 layer to successively grow on a P-type Si substrate. The silicon-based epitaxy structure is obtained by allowing a first layer of SrTiO3, a second layer of La0.67Sr0.33MnO3, and a third layer of (BaTiO3)0.5—(CeO2)0.5 (in which an atomic ratio of BaTiO3 to CeO2 is 0.5:0.5) to successively grow at a specific temperature and a specific oxygen pressure. The preparation method of a silicon-based molecular beam heteroepitaxy material adopts pulsed laser deposition (PLD), which is relatively simple and easy to control, and can achieve the memristor function and neuro-imitation characteristics. A thickness of the first buffer layer of SrTiO3 can reach 40 nm.Type: GrantFiled: February 18, 2022Date of Patent: April 30, 2024Assignee: Hebei UniversityInventors: Xiaobing Yan, Haidong He, Zhen Zhao
-
Patent number: 11952654Abstract: A sputtering device to sputter a liquid target. The sputtering device including a trough to receive a liquid target material and a device to stir or agitate the liquid target material. The device configured to degas the liquid target material or/and to dissipate solid particles or islands on a surface of the target or/and to move such particles or islands from an active surface region to a passive surface region and/or vice-versa, whereby the passive surface region is at least 50% less exposed to sputtering as the active surface region.Type: GrantFiled: October 22, 2019Date of Patent: April 9, 2024Assignee: EVATEC AGInventors: Dominik Jaeger, Thomas Tschirky, Marco Rechsteiner, Heinz Felzer, Hartmut Rohrmann
-
Patent number: 11939661Abstract: According to one of various aspects of the present invention, a tungsten sputtering target has a purity of tungsten is 5 N (99.999% by weight) or more, and an impurity of carbon and an impurity of oxygen contained in tungsten are 50 ppm by weight or less, respectively, and an average grain size of tungsten crystal is more than 100 ?m.Type: GrantFiled: September 7, 2018Date of Patent: March 26, 2024Assignee: JX Metals CorporationInventors: Shinji Sogawa, Takafumi Dasai, Seiji Nakasumi
-
Patent number: 11932934Abstract: Physical vapor deposition methods for reducing the particulates deposited on the substrate are disclosed. The pressure during sputtering can be increased to cause agglomeration of the particulates formed in the plasma. The agglomerated particulates can be moved to an outer portion of the process chamber prior to extinguishing the plasma so that the agglomerates fall harmlessly outside of the diameter of the substrate.Type: GrantFiled: September 9, 2022Date of Patent: March 19, 2024Assignee: Applied Materials, Inc.Inventors: Halbert Chong, Lei Zhou, Adolph Miller Allen, Vaibhav Soni, Kishor Kalathiparambil, Vanessa Faune, Song-Moon Suh
-
Patent number: 11923178Abstract: A vacuum processing apparatus SM of this invention has: a vacuum chamber which performs a predetermined processing on a to-be-processed substrate that is set in position in the vacuum chamber. Inside the vacuum chamber there is disposed a deposition preventive plate) which is made up of a fixed deposition preventive plate and a moveable deposition preventive plate which is moveable in one direction. Further provided are: a metal block body disposed in a vertical posture on an inner wall surface of the vacuum chamber; and a cooling means for cooling the block body. In a processing position in which a predetermined vacuum processing is performed on the to-be-processed substrate, a top surface of the block body is arranged to be in proximity to or in contact with the moveable deposition preventive plate.Type: GrantFiled: September 12, 2019Date of Patent: March 5, 2024Assignee: ULVAC, INC.Inventors: Koji Suzuki, Hideto Nagashima, Yoshinori Fujii
-
Patent number: 11908669Abstract: The present disclosure provides systems and methods of controlling a magnetically confined plasma sputtering process using the waste heat transferred from the plasma into the target material and then into thermally controlled magnetic field adjustment assemblies that modify the strength of the plasma confinement magnetic fields on the target material.Type: GrantFiled: January 7, 2022Date of Patent: February 20, 2024Assignee: Arizona Thin Film Research, LLCInventor: Patrick Morse
-
Patent number: 11898236Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a processing chamber for processing a substrate comprises a sputtering target, a chamber wall at least partially defining an inner volume within the processing chamber and connected to ground, a power source comprising an RF power source, a process kit surrounding the sputtering target and a substrate support, an auto capacitor tuner (ACT) connected to ground and the sputtering target, and a controller configured to energize the cleaning gas disposed in the inner volume of the processing chamber to create the plasma and tune the sputtering target using the ACT to maintain a predetermined potential difference between the plasma in the inner volume and the process kit during the etch process to remove sputtering material from the process kit, wherein the predetermined potential difference is based on a resonant point of the ACT.Type: GrantFiled: October 20, 2021Date of Patent: February 13, 2024Assignee: APPLIED MATERIALS, INC.Inventors: Zhiyong Wang, Halbert Chong, John C. Forster, Irena H. Wysok, Tiefeng Shi, Gang Fu, Renu Whig, Keith A Miller, Sundarapandian Ramalinga Vijayalakshmi Reddy, Jianxin Lei, Rongjun Wang, Tza-Jing Gung, Kirankumar Neelasandra Savandaiah, Avinash Nayak, Lei Zhou
-
Patent number: 11895779Abstract: The method for processing a substrate includes the substrate preparation step of preparing the substrate, the pattern formation step of forming dummy patterns extending in an X-direction on the substrate, the mask arrangement step of arranging a stencil mask having multiple opening patterns on the substrate, the coating formation step of forming a metal film on the substrate through the multiple opening patterns, and the separation step of separating the dummy patterns from the substrate to obtain a submount. The dummy pattern has protrusion formed such that a side surface of the submount is exposed and formed close to the side surface with a clearance.Type: GrantFiled: September 11, 2019Date of Patent: February 6, 2024Assignee: SUMITOMO PRECISION PRODUCTS CO., LTD.Inventor: Yasuyuki Hirata
-
Patent number: 11881386Abstract: A method for coating a curved substrate is disclosed, which includes: providing a coating device including: a chamber, a carrying platform, a sputtering mechanism, and a position-adjusting mechanism, wherein the carrying platform is disposed in the chamber and has a first surface, the sputtering mechanism is disposed in the chamber and is disposed corresponding to the carrying platform, and the position-adjusting mechanism is disposed in the chamber; providing a curved substrate, wherein the curved substrate is disposed on the first surface of the carrying platform and the curved substrate has a second surface; adjusting the sputtering mechanism to different positions by the position-adjusting mechanism; and sputtering a coating material to different parts of the second surface of the curved substrate by the sputtering mechanism at the different positions.Type: GrantFiled: July 8, 2021Date of Patent: January 23, 2024Assignee: INNOLUX CORPORATIONInventors: Ching-Feng Kuo, Chin Lung Ting, Ying-Yao Tang
-
Patent number: 11851748Abstract: Provided a sputtering target and a method for manufacturing the sputtering target, in which a penetration of impurities into the target material during bonding is suppressed A sputtering target, wherein an intensity ratio (B/A) of a minimum reflection intensity B to a maximum reflection intensity A of a back surface wave of a target material as measured by a water immersion ultrasonic flaw detection inspection after bonding the target material is 0.70 or more, and wherein a water absorption rate of the target material determined by a relationship of a weight change rate (100×(a?b)/b) is 0.01% to 1.0%, where (a) is a weight after immersion as measured after immersing the target material in water for 10 hours and removing the water on a surface, and (b) is a dry weight of the target material before the immersion.Type: GrantFiled: March 25, 2021Date of Patent: December 26, 2023Assignee: JX Metals CorporationInventor: Jun Kajiyama
-
Patent number: 11854776Abstract: In an embodiment, a magnetic assembly includes: an inner permeance annulus; and an outer permeance annulus connected to the inner permeance annulus via magnets, wherein the outer permeance annulus comprises a peak region with a thickness greater than other regions of the outer permeance annulus.Type: GrantFiled: July 28, 2022Date of Patent: December 26, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Tsung-Jen Yang, Yi-Zhen Chen, Chih-Pin Wang, Chao-Li Shih, Ching-Hou Su, Cheng-Yi Huang
-
Patent number: 11851751Abstract: A deposition system is provided capable of cleaning itself by removing a target material deposited on a surface of a collimator. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, a target enclosing the substrate process chamber, and a collimator having a plurality of hollow structures disposed between the target and the substrate, a vibration generating unit, and cleaning gas outlet.Type: GrantFiled: July 23, 2021Date of Patent: December 26, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wen-Hao Cheng, Hsuan-Chih Chu, Yen-Yu Chen
-
Patent number: 11840757Abstract: A film deposition system according to the present embodiment includes a film deposition apparatus, and a computer, in which the film deposition apparatus includes a film deposition chamber in which a plurality of deposition species are installable, and the computer includes a calculation region that calculates based on a calculation model having an Ising model or QUBO, and predict a time required for film deposition when a disposition of the deposition species is set.Type: GrantFiled: June 15, 2021Date of Patent: December 12, 2023Assignee: TDK CORPORATIONInventors: Tsuyoshi Suzuki, Katsuyuki Nakada, Tomoyuki Sasaki
-
Patent number: 11827974Abstract: A sputtering system is suitable for sputtering a surface to be sputtered having sections. Each section has a projection height. The sputtering system includes a supporting plate, a sputtering array, and a controller. The sputtering array is arranged on the supporting plate. The sputtering array includes sputtering units. Each section corresponds to at least one of the sputtering units. Each sputtering unit has a driving shaft and a target. The target faces the surface to be sputtered. The controller is electrically connected the driving shaft. The driving shaft drives the target to move relative to the surface to be sputtered. The controller controls a distance between each sputtering unit and the corresponding section of the sections in the direction of the projection height to satisfy a given condition.Type: GrantFiled: December 10, 2020Date of Patent: November 28, 2023Assignees: Interface Technology (Chengdu) Co., Ltd., Interface Optoelectronics (Shenzhen) Co., Ltd., General Interface Solution LimitedInventors: Po-Lun Chen, Chun-Ta Chen, Tsung-Chen Chou, Chin-Yang Wu, Nai-Hau Shiue
-
Patent number: 11821067Abstract: A deposition apparatus, which forms a film on a substrate, includes a rotation unit configured to rotate a target about a rotating axis; a striker configured to generate an arc discharge; a driving unit configured to drive the striker so as to make a close state which the striker closes to a side surface around the rotating axis of the target to generate the arc discharge; and a control unit configured to control rotation of the target by the rotation unit so as to change a facing position on the side surface of the target facing the striker in the close state.Type: GrantFiled: April 28, 2020Date of Patent: November 21, 2023Assignee: CANON ANELVA CORPORATIONInventor: Masahiro Atsumi
-
Patent number: 11823879Abstract: There is provided a film formation apparatus which forms a film on a substrate by sputtering. The apparatus comprises: a substrate holder configured to hold the substrate; and a plurality of cathodes configured to hold targets that emit sputtered particles, and connected to a power supply. At least one of the plurality of cathodes holds the targets of a plurality of types.Type: GrantFiled: January 11, 2022Date of Patent: November 21, 2023Assignee: Tokyo Electron LimitedInventors: Masato Shinada, Tetsuya Miyashita, Naoki Watanabe
-
Patent number: 11802332Abstract: A method for manufacturing a near-infrared sensor cover includes arranging a mask in a region of an undercoating layer formed on a rear surface of a base, the region being different from a heater formation region in which a heater is to be formed and different from a belt-shaped separation region extending along an edge of the heater formation region, forming a heat-generating film on the mask and the undercoating layer, the heat-generating film being made of the conductive heat-generating material, peeling, using a laser, the heat-generating film formed in the separation region, and removing the mask and the heat-generating film formed on the mask. The separation region has a width that is set to be smaller than a beam diameter of each of near-infrared rays transmitted from the transmitting portion.Type: GrantFiled: February 17, 2022Date of Patent: October 31, 2023Assignee: TOYODA GOSEI CO., LTD.Inventors: Risa Hirano, Koji Okumura, Koji Fukagawa, Katsuyuki Hirano
-
Patent number: 11788182Abstract: A hydrogen-free carbon film polymer lubricating material and a preparation method and use thereof are disclosed. In the method, a graphite target is used as the target material, and a magnetron sputtering deposition is performed on a surface of the polymer substrate, thereby physically depositing and forming a hydrogen-free carbon film on the surface of the polymer substrate, thereby obtaining a hydrogen-free carbon film polymer lubricating material.Type: GrantFiled: January 21, 2022Date of Patent: October 17, 2023Assignee: Lanzhou Institute of Chemical Physics Chinese Academy of SciencesInventors: Peng Wang, Liqiang Chai, Li Qiao, Xiaogang Bai, Xiaoyu Zhao
-
Patent number: 11767587Abstract: A target for use in a physical vapor deposition process includes a matrix composed of a composite material selected from the group consisting of aluminum-based material, titanium-based material and chromium-based material and all combinations thereof. The matrix is doped with doping elements and the doping elements are embedded as constituents of ceramic compounds or aluminum alloys in the matrix. The doping elements are selected from the group of the lanthanides: La, Ce, Nb, Sm and Eu. A process for producing such a target and a use of such a target in a physical vapor deposition process are also provided.Type: GrantFiled: February 19, 2018Date of Patent: September 26, 2023Assignee: Plansee Composite Materials GmbHInventors: Peter Polcik, Szilard Kolozsvari, Paul Mayrhofer, Helmut Riedl
-
Patent number: 11753712Abstract: Certain example embodiments of this invention relate to electrochromic devices (100, 1500), assemblies incorporating electrochromic devices, and methods of making the same. Highly-durable electrochromic devices include tungsten oxide (e.g., WO3 or other suitable stoichiometry) films (102, 1510) prepared using high-rate bias-enhanced sputter deposition. The sputtering is performed in a low-pressure (e.g., 1 mTorr) environment, and the biasing is very high (e.g., greater than ?400 V, more preferably greater than ?500 V), which causes high energy ion bombardment that in turn leads to partial nanocrystallization of the WO3 matrix, while simultaneously generating the porous microstructure desirable for ionic diffusion.Type: GrantFiled: September 8, 2017Date of Patent: September 12, 2023Assignee: Essilor InternationalInventors: Francis Blanchard, Bill Baloukas, Ludvik Martinu