Abstract: Provided is a plasma measuring method for measuring a plasma state using a probe device disposed at a plasma processing apparatus and a measuring circuit including a signal transmitter that outputs an AC voltage, the method comprising: measuring a first current in the measuring circuit when the AC voltage is outputted from the signal transmitter to the probe device in a state where plasma is not generated in the plasma processing apparatus and a second current in a state where plasma is generated in the plasma processing apparatus; measuring a phase difference between a current flowing through the plasma and the AC voltage by vector calculation using the measured first and second currents; and adjusting the AC voltage such that a voltage applied to the plasma becomes constant based on the phase difference and measuring a plasma state based on the measured current flowing through the plasma.

Abstract: Methods and apparatus for a substrate processing system includes a chamber port assembly configured to connect between respective first and second chambers of a substrate processing system. The chamber port assembly includes a body with openings disposed on opposing sides of the body and a tunnel extending between the openings to facilitate passage of a substrate between the first and second chambers through the tunnel; an inlet port in the body; a manifold in fluid communication with the inlet port and having an outlet in fluid communication with the tunnel; and a sensor port in the body in communication with the tunnel.

Abstract: The objective of the present invention is to design a novel coating material applied to the surface of industrial rollers used in the manufacturing process of secondary batteries and to provide a method for forming the coating material. In accordance with this objective, the present invention provides a roller surface coating material composed of Ni—Co—Cr—Si—N, utilizing a high-entropy alloy target containing Ni—Co—Cr—Si.

Abstract: A Me-B based alloy spherical powder for use in a sputtering target including a metal powder selected from the group consisting of: Mo, W, Ta, Nb, Hf and Ti; a BN powder; and optionally a binary or ternary compound powder, as well as W/B sputter targets, alloys, and barrier/seed films made by such targets. A combined diffusion barrier layer is provided by sputter coating of a W/B sputter target either directly or by reactive sputtering with nitrogen wherein the B content of the alloy is about 0.5 wt %-10 wt %. The oxygen content of the alloy target is about 50 ppm or less. Preferably, the alloy is 99.995% pure.

Abstract: A method of fabricating a superconducting wire includes forming a buffer layer on the substrate, the buffer layer including an Al2O3 layer, the Al2O3 layer being formed by reactive magnetron sputtering in which first oxygen gas as reactant gas and a sputtering target made of aluminium metal are used, the Al2O3 layer being formed while being supplied the first oxygen gas at a first concentration, the first concentration being a concentration of the first oxygen gas at which an emission intensity of Al in plasma near a surface of the sputtering target is not less than 25% and not more than 80% of a first reference value, the first reference value being the emission intensity of Al at which the concentration of the first oxygen gas is zero; and forming a superconducting layer above the buffer layer.

Abstract: A plasma processing chamber has an upper window with a coil disposed above the upper window. A coil connection enclosure is disposed above the coil. A metrology enclosure is disposed above the coil connection enclosure. A spectral reflectometry system is disposed within the metrology enclosure. The spectral reflectometry system includes an optical collimator positioned to direct a beam of light through an opening in the metrology enclosure, an opening in the coil connection enclosure, and the upper window into the plasma processing chamber. The optical collimator is also configured to receive reflected light from within the plasma processing chamber, where the reflected light passes through the upper window and through the opening in the coil connection enclosure and through the opening in the metrology enclosure. A tip angle and a tilt angle of the optical collimator are remotely adjusted to optimize an orientation of the optical collimator.

Abstract: The present invention is a composite film manufacturing method in which a sputtering device is used and a gas of a substance with which can be prepared a mixed gas of a target of a solid substance in a standard state (a temperature of 25° C. and pressure of 100 KPa) (A) and a sputtering gas (B) is used. The method includes: (1) a step for attaching the target (A) to a target installation jig of the sputtering device; (2) a step for reducing the pressure inside a sputtering chamber of the sputtering device to a prescribed first pressure; (3) a step for introducing the mixed gas of the sputtering gas and the gas (B) into the sputtering chamber of the sputtering device such that the inside of the sputtering chamber reaches a second prescribed pressure (greater than or equal to the first prescribed pressure); and (4) a step for applying electric power to the target (A) and using sputtering to form a composite film on the surface of a base material.

Abstract: A substrate processing apparatus includes a base plate, an upper plate on the base plate, a DC power supply configured to supply power to the upper plate, and a controller interconnecting the upper plate and the DC power supply. The upper plate includes a first electrode, and a second electrode spaced apart from the first electrode. The controller includes a first controller interconnecting the first electrode and the DC power supply, and a second controller interconnecting the second electrode and the DC power supply. The DC power supply is configured to apply a first voltage to the first electrode via the first controller, and configured to apply a second voltage to the second electrode via the second controller. The first voltage and the second voltage are different.

Abstract: A thin-film forming apparatus and method are provided. A thin-film forming apparatus includes a chamber configured to hold a vacuum formed in the chamber, a deposition object placed at a set position inside the chamber, a sputtering target placed inside the chamber and containing particles for deposition, a gas supply module configured to supply a gas for forming a plasma state inside the chamber, a step-coverage control module located inside the chamber and facing the deposition object, and a voltage supply module located inside the chamber and configured to supply an electric current to the sputtering target, wherein the deposition object is deposited with the particles provided from the sputtering target based on the electric current, and wherein the step-coverage control module is configured to control a step coverage of the deposition object by adjusting an amount of the particles moving toward the deposition object through a repositioning maneuver.

Abstract: A sputtering target assembly comprises a tungsten containing sputtering target, a titanium containing backing plate attached to the tungsten containing sputtering target and an interlayer positioned between and diffusion bonding the tungsten containing sputtering target and the titanium containing backing plate. The interlayer includes a nickel layer immediately adjacent to the tungsten containing sputtering target and a copper layer immediately adjacent to the nickel layer.

Abstract: The oxide film preparation method includes placing a wafer in a reaction chamber, introducing a first mixed gas of a bombardment gas and an oxidization gas into the reaction chamber, applying DC power and radio frequency (RF) power to the target, exciting the first mixed gas to form a plasma to bombard the target to form an oxide film on the wafer, stopping applying the DC power and the RF power on the target, introducing a second mixed gas of the bombardment gas, the oxidization gas, and nitrogen into the reaction chamber, applying the RF power to the base, exciting the second mixed gas to form the plasma to bombard the oxide film to form an oxynitride film, continuing to introduce the second mixed gas, exciting the second mixed gas to form the plasma to bombard the target and the oxynitride film to form an oxynitride film.

Abstract: Methods for producing layered nanocarbon structures placing a workpiece in a working chamber, applying a vacuum to the chamber, processing the workpiece surface with gas ions, applying a material sublayer to the workpiece surface, depositing carbon ions from a carbon plasma on the workpiece surface to apply an amorphous diamond-like sp3 carbon coating layer on the workpiece surface. The methods include irradiating the growing carbon coating with accelerated ions of an inert gas at a first energy range to apply a graphite sp2 carbon coating layer on the sp3 carbon coating layer and irradiating the growing carbon coating with accelerated ions of the inert gas at a second energy range, different from the first energy range, to apply a linear chain and polymer sp1 carbon coating layer on the sp2 carbon coating layer.

Abstract: Provided are methods of reducing the stress of a semiconductor wafer. The method includes exposing depositing an aluminum layer on a top surface of a substrate; and cooling the substrate to a temperature of less than or equal to 20° C., or less than or equal to 10° C., or less than or equal to 0° C., or less than or equal to ?20° C. In some embodiments, the method is conducted within a processing tool, e.g., a cluster tool.

Abstract: The disclosure relates to a method for micromachining a biological sample for creating a lamella for analysis in a Cryo-Charged Particle Microscope (Cryo-CPM). The method comprising the steps of providing a biological sample on a sample carrier; Locating a sample area on the sample carrier, said sample area comprising a region of interest having biological material from which a lamella can be created; and Micromachining at least part of the biological sample so as to remove material in a part of the sample area surrounding the region of interest, in order to increase a visual contrast between the biological material in the region of interest and its surroundings. With the increased visual contrast a location for a potential lamella can be identified.

Abstract: The present disclosure relates to target plates for sputtering a material to form a layer of material on a substrate. In some embodiments, a target plate is made up of two or more discrete sections and/or has at least one recess to help reduce or avoid hotspots created by a rotating plasma ring created during sputtering. The present disclosure also relates to methods of actively heating and/or cooling different regions of a heat-sink backing plate while sputtering material to reduce or avoid hotspots created by a rotating plasma ring created during sputtering.

Abstract: A film forming apparatus has a process chamber and a processing unit provided in the process chamber and forming adhesive film. The surface of the inner walls of the process chamber is formed of a material having a large getter effect on gas or water (H2O) remaining in the process chamber.

Abstract: An optical filter including at least one of a high refractive index material and a low refractive index material; wherein the optical filter exhibits a reduced angle shift in at least one of a visible, near infrared, and an extreme ultraviolet wavelength is disclosed. A method of depositing a film is also disclosed.

Abstract: Embodiments of process chambers having cooling plate are provided herein. In some embodiments, a process chamber includes: a chamber body defining an interior volume therein, the chamber body having a view port side having an opening configured as a view port, a pump side having a pump port, and a shutter side opposite the view port side, wherein the port view side, the pump side, and the shutter side are all different sides of the chamber body; a first cooling plate coupled to the view port side and having one or more first coolant channels; a second cooling plate coupled to the pump side and having one or more second coolant channels; and a third cooling plate coupled to the shutter side and having one or more third coolant channels.

Abstract: In a method for preparing a cross section in a substrate, a cut face is created in the substrate with at least one focused ion beam, wherein before and during the creation of the cut face a surface region of the substrate on the edge of the cut face is protected with a hardmask that is made from a doped semiconductor material, provided as a separate part, and positioned on the edge of the cut face with at least one micromanipulator. The method is characterized in that the hardmask is not affixed to the substrate, but instead is held in place with the micromanipulator while the cut face is created. With the method, it is possible to reduce the processing time for creating the cross section and to avoid contamination of the surface by foreign materials in semiconductor manufacturing.

Abstract: A method of depositing an AlN thin film according to an embodiment of the disclosure comprises: a step of forming an insulating layer on a base substrate; and a step of depositing an AlN thin film on the insulating layer through a sputtering process, wherein the step of depositing the AlN thin film is performed through a continuous deposition type, at lower than a CMOS-compatible process temperature and in a state of applying a bias positive voltage to the base substrate such that the AlN thin film has an adjustable deposition thickness. Therefore, an embodiment of the disclosure is advantageous in that an AlN thin film having excellent piezo characteristics can be obtained at a low process temperature compatible with a CMOS process.