Abstract: An adjustment-determining method includes obtaining a mathematical model relating an operating parameter of the deposition line to a quality function defined from a quality measurement of a stack of thin layers deposited by the deposition line on a transparent substrate; obtaining a value of the quality function from a value of the quality measurement measured at the outlet of the deposition line on a stack of thin layers deposited by the deposition line on a substrate while the deposition line was set so that an operating parameter had a current value; and automatically determining by the mathematical model an adjustment value for the current value of the operating parameter serving to reduce a difference that exists between the value obtained for the quality function and a target value selected for the quality function for the stack of thin layers.

Abstract: Disclosed are embodiments for an engineered feature formed as a part of or on a chamber component. In one embodiment, a chamber component for a processing chamber includes a component part body having unitary monolithic construction. The component part body has an outer surface. An engineered complex surface is formed on the outer surface. The engineered complex surface has a first lattice framework formed from a plurality of first interconnected laths and a plurality of first openings are bounded by three or more laths of the plurality of laths.

Abstract: Provided is a surface treatment facility in which both surfaces of a material are subjected to continuous film deposition by PVD as the material is conveyed in the longitudinal direction, wherein flutter of the material subjected to coating can be suppressed. This surface treatment facility comprises a chamber configured to continuously deposit a film by PVD on both surfaces of a material as the material is conveyed in the longitudinal direction through the chamber; a conveyance mechanism for conveying the material subjected to coating; a blowing mechanism for blowing film-forming gas in the longitudinal direction on both sides of the material present in the chamber; and has an X/Y ratio within a range of 0.4 to 3.0 where X is the film-forming gas blowing speed, and Y is the conveyance speed of the material subjected to coating, and where the unit of measurement of X and Y is m/min.

Abstract: A sputtering apparatus is provided. The sputtering apparatus comprises a vacuum chamber in which a substrate is located; a target having one surface facing an inner surface of the vacuum chamber; a gas supplier configured to supply a gas for generating plasma in the vacuum chamber; a power supplier configured to supply a power to the target to generate the plasma, sputter the target, and form a film on the substrate; and an abnormality detector configured to detect abnormality caused by a temperature of the target.

Abstract: Various embodiments herein relate to carriers for supporting one or more substrate as the substrates are passed through a processing apparatus. In many cases, the substrates are oriented in a vertical manner. The carrier may include a frame and vertical support bars that secure the glass to the frame. The carrier may lack horizontal support bars. The carrier may allow for thermal expansion and contraction of the substrates, without any need to provide precise gaps between adjacent pairs of substrates. The carriers described herein substantially reduce the risk of breaking the processing apparatus and substrates, thereby achieving a more efficient process. Certain embodiments herein relate to methods of loading substrates onto a carrier.

Abstract: A an apparatus includes a processing chamber configured to house a workpiece, a target holder in the processing chamber, a first magnetic element positioned over a backside of the target holder, a first arm assembly connected to the first magnetic element, a rotational shaft, and a first hinge mechanism connecting the rotational shaft and the first arm assembly.

Abstract: A layer of lanthanum boride of stoichiometry LaBx where x is between 9 and 12 is deposited on substrate, for example a stainless steel watch dial, and subsequently treated with a laser, such that the portion(s) of the layer treated with the laser change colour according to the laser power. This produces multicoloured surfaces having high resistance to corrosion and abrasion. The layer of LaBx is deposited by PVD and by cathode sputtering, using a LaB6 target of purple-violet colour, such that the colour of the deposited layer differs from the colour of the target. The laser treatment at specific powers changes the stoichiometry of the layer in the treatment portions, such that the colour of these portions changes according to the stoichiometry obtained. At higher powers, the laser will remove the layer of LaBx. Thus the colour of the treated portions is determined by the material of the substrate.

Abstract: The present invention relates to a magnetic recording medium including a substrate; an underlayer laminated upon the substrate; and a magnetic layer laminated upon the underlayer, wherein the underlayer includes a first underlayer containing a compound represented by a following general formula: MgO(1-X), where X is within a range of 0.07 to 0.25, the magnetic layer includes a first magnetic layer containing an alloy having a L10 structure, and the alloy having the L10 structure includes B, and the first underlayer is in contact with the first magnetic layer.

Abstract: Methods for the manufacture of extreme ultraviolet (EUV) mask blanks and production systems therefor are disclosed. A method for forming an EUV mask blank comprises forming a bilayer on a portion of a multi-cathode PVD chamber interior and then forming a multilayer stack of Si/Mo on a substrate in the multi-cathode PVD chamber.

Abstract: Methods and apparatus for performing physical vapor deposition in a reactor chamber to form aluminum material on a substrate including: depositing a first aluminum layer atop a substrate to form a first aluminum region having a first grain size and a second aluminum layer atop the first aluminum layer, wherein the second aluminum layer has a second grain size larger than the first grain size; and depositing aluminum atop the second aluminum layer under conditions sufficient to increase the second grain size.

Abstract: The present invention discloses a PVD coating process for producing a multifunctional coating structure comprising the steps of producing a HEA ceramic matrix on a substrate and the targeted introduction of a controlled precipitate structure into the HEA ceramic matrix to generate a desired specific property of the coating structure.

Abstract: A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed. Chambers and methods are described that provide a chamber comprising an upper shield with two holes that are positioned to permit alternate sputtering from two targets.

Abstract: The disclosure provides an anti-corrosion conductive film and methods of making and using thereof. The anti-corrosion conductive film is formed by sequentially forming an anti-corrosion protective layer, a stress transition layer and a conducting layer on the surface of a substrate by deposition through a high-low pulse bias alternation method. The anti-corrosion conductive film is a nano-multilayer anti-corrosion conductive film exhibiting excellent corrosion resistance and conductivity. The anti-corrosion conductive film has great application prospects in the fields of metal polar plates of fuel cells, ground grid equipment of power transmission lines, and the like.

Abstract: Method for producing a photochromic material and a component including the photochromic material, where the method comprises the steps of:-first the formation on a substrate of a layer of an essentially oxygen free metal hydride with a predetermined thickness using a physical vapor deposition process; and -second exposing the metal hydride layer to oxygen where the oxygen reacts with the metal hydride, resulting in a material with photochromic properties.

Abstract: A method of manufacturing a transparent conductive film comprising preparing a substrate; and forming a thin film comprising—a compound of Chemical Formula 1 on the substrate: BapLaqSnmOn??Formula 1 wherein p, q, m and n are atomic content ratios, p, m and n each are independently more than 0 and less than or equal to 6, and q is 0 or 1, wherein the forming of the thin film is performed by an RF sputtering process at a temperature of 250° C. or lower.

Abstract: A method for preparing an ammonium thiomolybdate-porous amorphous carbon composite superlubricity film is disclosed. First, a porous amorphous carbon film is prepared by an anode layer ion source assisted plasma chemical vapor deposition method and a reactive magnetron sputtering method on a substrate. The porous amorphous carbon film is then impregnated in an ammonium thiomolybdate solution, so that the ammonium thiomolybdate is adsorbed on the porous amorphous carbon film, and the impregnated porous amorphous carbon film is air dried.

Abstract: A sputtering apparatus includes a base on which a substrate is mounted, an annular member disposed at an outer periphery of the base to surround a side surface and a backside of the substrate without in contact with the substrate, and an edge cover that covers an outer edge of an upper surface of the substrate mounted on the base. The annular member has a first surface facing the backside of the substrate mounted on the base with a gap, a second surface facing the side surface of the substrate mounted on the base with a gap, and a tapered surface formed at a corner portion between the first surface and the second surface.

Abstract: The present disclosure is a wafer support, which includes a heating unit, an insulating-and-heat-conducting unit and a conduct portion, wherein the insulating-and-heat-conducting unit is positioned between the conduct portion and the heating unit. During a deposition process, an AC bias is formed on the conduct portion to attract a plasma disposed thereabove. The heating unit includes at least one heating coil, wherein the heating coil heats the wafer supported by the wafer support via the insulating-and-heat-conducting unit and the conduct portion. The insulating-and-heat-conducting unit electrically insulates the heating unit and the conduct portion to prevent the AC flowing in the heating coil and the AC bias on the conduct portion from conducting each other, so the wafer support can generate a stable AC bias and temperature to facilitate forming an evenly-distributed thin film on the wafer supported by the wafer support.

Abstract: Magnetron sputtering source (1) for coating of a substrate (2), the sputtering source (1) comprising: a target (5) having a target surface at a front side a magnetron arrangement (511, 512) at a backside of the target (5) for creating a magnetic field near the target surface, to define a loop shaped erosion zone (20) at the target surface between an inner magnet assembly (512) and an outer magnet assembly (511), wherein the erosion zone (20) comprises a middle section with two parallel tracks (26) having a distance (d) and two curved end loop sections (27) each of which connects adjoining ends of the parallel tracks (26) and has a loop width (w) in the direction of the distance (d) which is greater than the distance (d) resulting in a double-T-shaped primary geometry of the erosion zone to provide an increased coating material flux from the end loop sections (27) to the substrate.

Abstract: A sputtering target assembly, sputtering apparatus, and method, the target assembly including a backing plate having an aperture formed therein; and a target bonded to a front surface of the backing plate. The aperture is disposed on the backing plate such that a first end of the aperture is sealed by a portion of the target that is predicted by a sputtering target erosion profile to have the highest etching rate during a corresponding sputtering process.