Patents Examined by Patrick S Ott
  • Patent number: 11236415
    Abstract: A deposition system and a method of operation thereof are disclosed. A PVD chamber is disclosed comprising a plurality of cathode assemblies, a rotating shield below the plurality of cathode assemblies to expose one of the plurality cathode assemblies through the shroud and through a shield hole of the shield, the shield comprising a top surface including a raised peripheral frame. A shield mount sized and shaped to engage with the raised peripheral frame to secure the shield mount to the shield.
    Type: Grant
    Filed: June 18, 2019
    Date of Patent: February 1, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Vibhu Jindal, Sanjay Bhat
  • Patent number: 11225710
    Abstract: A method for preparing a super-lubricative multi-layer composite fullerene-like carbon layer/graphene-like boron nitride thin film is provided. A substrate is ultrasonically cleaned in absolute ethyl alcohol and acetone sequentially for 15 min. The substrate is cleaned by argon plasma bombardment for 15 min. A fullerene-like carbon layer A having an onion-like structure is prepared by high-vacuum medium-frequency magnetron sputtering for 30 s. A graphene-like boron nitride layer B is prepared by high-vacuum medium-frequency magnetron sputtering and coating device to sputter the elemental boron target for 30 s. Steps (3) and (4) are repeated 80 times to overlay the fullerene-like carbon layer A and the graphene-like boron nitride layer B in an alternate way. The super-lubricative multi-layer composite fullerene-like carbon layer/graphene-like boron nitride thin film has a large load capacity, and excellent wear resistance, high temperature resistance and super lubrication.
    Type: Grant
    Filed: June 10, 2020
    Date of Patent: January 18, 2022
    Inventors: Kaixiong Gao, Junyan Zhang, Bin Zhang, Yuanlie Yu, Li Qiang, Xingkai Zhang
  • Patent number: 11177412
    Abstract: A sputter deposition method includes sputtering a first target material onto a web substrate moving through a first process module while heating the substrate, providing the substrate from the first process module to a connection unit containing a roller assembly including a plurality of cylindrical rollers, bending the substrate at an angle of 10° to 40° around the roller assembly in the connection unit, providing the substrate from the connection unit to a second process module, and sputtering a second target material onto the substrate moving through the second process module while heating the substrate.
    Type: Grant
    Filed: April 22, 2019
    Date of Patent: November 16, 2021
    Assignee: BEIJING APOLLO DING RONG SOLAR TECHNOLOGY CO., LTD.
    Inventors: Thomas Heckel, Heinrich von Bunau
  • Patent number: 11158492
    Abstract: A film forming apparatus for forming a film by reactive sputtering includes a processing chamber, a sputter mechanism, a sputtered particle shielding member, a reaction chamber, a substrate support, a substrate moving mechanism, a sputtered particle passage hole, and a reactive gas introducing unit. While moving a substrate by the substrate moving mechanism, sputtered particles, that are released to the discharge space by the sputter mechanism and pass through the sputtered particle passage hole to be injected to the reaction chamber, are reacted with a reactive gas introduced into the reaction chamber, and a reactive sputtering film generated by the reaction is formed on the substrate.
    Type: Grant
    Filed: July 25, 2019
    Date of Patent: October 26, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Hiroyuki Toshima, Hiroyuki Iwashita, Tatsuo Hirasawa
  • Patent number: 11060180
    Abstract: There is provided a BN-containing ferromagnetic material sputtering target which is capable of suppressing generation of particles during sputtering. A sputtering target containing from 1 to 40 at. % of B and from 1 to 30 at. % of N and comprising a structure including at least one ferromagnetic metal-containing metal phase and at least one nonmagnetic material phase, wherein an X-ray diffraction profile obtained by analyzing the structure with an X-ray diffraction method exhibits a diffraction peak derived from cubic boron nitride.
    Type: Grant
    Filed: September 12, 2017
    Date of Patent: July 13, 2021
    Assignee: JX Nippon Mining & Metals Corporation
    Inventor: Atsushi Sato
  • Patent number: 11043406
    Abstract: Two-piece shutter disk assemblies for use in process chambers are provided herein. In some embodiments, a shutter disk assembly for use in a process chamber includes an upper disk member having a top surface and a bottom surface, wherein a central alignment recess is formed in a center of the bottom surface, and a lower carrier member having a solid base having an upper support surface, wherein the upper support surface includes a first central self-centering feature disposed in the recess formed in the center of the bottom surface and an annular outer alignment feature that protrudes upward from a top surface of the lower carrier and forms a pocket, wherein the upper disk member is disposed in the pocket.
    Type: Grant
    Filed: April 15, 2019
    Date of Patent: June 22, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Cheng-Hsiung Tsai, Ananthkrishna Jupudi, Sarath Babu