Abstract: An organic light-emitting diode (OLED) display is disclosed. In one aspect, the OLED display includes a substrate including a pixel region including a plurality of pixels. A plurality of lighting test transistors is formed in a peripheral region surrounding the pixel region and electrically connected to the pixels, and the lighting test transistors are configured to test lighting of the pixels. Each of the lighting test transistors includes a first active layer pattern formed over the substrate, a first gate electrode formed over the first active layer pattern, and a conductive pattern formed over the first gate electrodes. The conductive pattern is electrically connected to the first gate electrode, the first gate electrodes are spaced apart from each other and have substantially the same shape, and the conductive patterns are integrally formed.

Abstract: A display device includes a first substrate, a light emitting element located on the first substrate and including a pair of electrodes and one organic layer or a plurality of organic layers located between the pair of electrodes, a second substrate located to face the first substrate, a third substrate located on a surface of the second substrate opposite to a surface thereof facing the light emitting element, and a tacky layer located between the second substrate and the third substrate, a tack strength between the tacky layer and the second substrate or the third substrate being weaker than an adhesive strength between one of the pair of electrodes and the one organic layer or an adhesive strength between the plurality of organic layers.

Abstract: A method for forming a compressively strained semiconductor substrate includes forming a lattice adjustment layer on a semiconductor substrate by forming compound clusters within an epitaxially grown semiconductor matrix. The lattice adjustment layer includes a different lattice constant than the semiconductor substrate. A rare earth oxide is grown and lattice matched to the lattice adjustment layer. A semiconductor layer is grown and lattice matched to the rare earth oxide and includes a same material as the semiconductor substrate such that the semiconductor layer is compressively strained.

Abstract: A semiconductor device includes a thin film transistor (100), the thin film transistor (100) including: a substrate (1); a gate electrode (3) provided on the substrate (1); a gate dielectric layer (5) formed on the gate electrode (3); an island-shaped oxide semiconductor layer (7) formed on the gate dielectric layer (5); a protective layer (9) provided so as to cover an upper face (7u) and an entire side face (7e) of the oxide semiconductor layer (7), the protective layer (9) having a single opening (9p) through which the upper face (7u) of the oxide semiconductor layer (7) is only partially exposed; and a source electrode (11) and a drain electrode (13) which are in contact with the oxide semiconductor layer (7) within the single opening (9p).

Abstract: A method of etching a metal containing layer including a metal including material includes providing a substrate including a top semiconductor surface having the metal containing layer thereon. A photoresist pattern is formed from a photoresist layer on the metal containing layer including forming sloped edge regions of the photoresist layer, wherein the sloped edge regions have an average angle over a full length of the sloped edge regions of from ten (10) to fifty (50) degrees. The metal containing layer is dry etched using the photoresist pattern, wherein the sloped edge regions of the photoresist layer reduce deposition and growth of an etch byproduct including the metal including material into sidewalls of the photoresist layer (metal/polymer sidewall defect) as compared to a conventional vertical (or near-vertical) edge of the photoresist layer.

Abstract: An organic light-emitting display apparatus includes a substrate, thin film transistors (TFTs), and organic light-emitting diode elements (OLEDs). First wirings have a first width and a first height and second wirings have a second width and a second height, in which the first wirings and the second wirings are formed in at least a portion of areas between the OLEDs. Third wirings connect the first wirings and the second wirings and have a third width smaller than the first width of the first wirings and the second width of the second wirings or have a third height smaller than the first height of the first wirings and the second height of the second wirings. An insulating layer covers at least a portion of the first and second wiring portions and exposes at least a portion of the third wirings.

Abstract: An organic light emitting display (OLED) device, and a method for manufacturing the OLED device are discussed. The OLED device according to one embodiment includes a substrate; an anode formed on the substrate; a bank formed on the substrate to partially overlap the anode; an organic light emitting element including a portion of a common layer on the anode and another portion of the common layer on the bank, the portion of the common layer on the bank being thinner than the another portion of the common layer on the anode; and a cathode fanned above the portion of the common layer on the anode and the another portion of the common layer on the bank.

Abstract: A method of manufacturing an integrated circuit structure includes forming a plurality of gate stacks on a first area and a second area of a substrate. A photo-resist layer is formed over the gate stacks on the first area. An ion-doped layer is formed in the second area. The photo-resist layer is removed. A first etching recess is formed in the first area and between two gate stacks. A second etching recess is formed in the second area and between two gate stacks. An epitaxial material is filled into the first etching recess and the second etching recess to form a first epitaxial structure and a second epitaxial structure.

Abstract: Disclosed herein is an organic light emitting diode display, including: a first thin film transistor including a first active pattern positioned on the substrate and a first gate electrode positioned on the first active pattern; a third thin film transistor including a third active pattern connected to the other end of the first active pattern and a third gate electrode positioned on the third active pattern; and a gate bridge directly connecting between the third active pattern and the first gate electrode and positioned between the substrate and the third active pattern.

Abstract: An organic light-emitting diode (OLED) display is disclosed. In one aspect, the display includes a stretchable substrate, a thin film transistor (TFT) formed over the stretchable substrate and including a plurality of electrodes, an OLED electrically connected to the TFT and including a plurality of electrodes, and a plurality of interconnection lines connected to the electrodes of the OLED and the TFT. At least one of the interconnection lines is configured to move in a stretching direction and rotate an electrode selected from the electrodes of the OLED and the TFT connected to the at least one interconnection line.

Abstract: A method of fabricating a semiconductor with self-aligned spacer includes providing a substrate. At least two gate structures are disposed on the substrate. The substrate between two gate structures is exposed. A silicon oxide layer is formed to cover the exposed substrate. A nitride-containing material layer covers each gate structure and silicon oxide layer. Later, the nitride-containing material layer is etched to form a first self-aligned spacer on a sidewall of each gate structure and part of the silicon oxide layer is exposed, wherein the sidewalls are opposed to each other. Then, the exposed silicon oxide layer is removed to form a second self-aligned spacer. The first self-aligned spacer and the second self-aligned spacer cooperatively define a recess on the substrate. Finally, a contact plug is formed in the recess.

Abstract: An organic light-emitting diode (OLED) display includes: a substrate on which an organic light-emitting element is formed; an organic light-emitting element on a substrate; a first inorganic layer on the organic light-emitting element and made substantially of hydrogenated silicon nitride (SiNx:H); an organic layer on a portion of the first inorganic layer; and a second inorganic layer on and completely covering the organic layer. Edges of the second inorganic layer come in contact with the first inorganic layer. A ratio of a number of oxygen atoms to silicon atoms contained in the first inorganic layer ranges from 0.12 to 0.19, and a ratio of a number of nitrogen atoms to silicon atoms contained in the first inorganic layer ranges from 0.9 to 1.5. The first inorganic layer and the second inorganic layer have substantially the same composition.

Abstract: A display may have an array of pixels formed from organic light-emitting diodes of different colors. Each organic light-emitting diode may have an anode, a cathode, and an emissive layer between the anode and cathode. To prevent undesired color shifts with off-axis viewing angles, evaporated color filters may be formed on the cathode in alignment with the light-emitting diodes. The color filters may include red color filters that overlap the red diodes but not the green and blue diodes, may include red, blue, and green filters that overlap respective red, green, and blue diodes, or may include an orange filter that overlaps red and green diodes and a blue filter that overlaps blue diodes. The color filters may serve as a capping layer for the diodes or a capping layer that is separate from the color filters can be incorporated into the display.

Abstract: An organic light emitting diode (OLED) display includes two or more spacers on a substrate, the two or more spacers being arranged at least at either one of a center point of a virtual quadrangle or a vicinity of the center point of the virtual quadrangle, an electrode portion at each apex of the virtual quadrangle, the electrode portion surrounding the two or more spacers, and a pixel definition layer on the electrode portion, the pixel definition layer including exposing the electrode portion.

Abstract: The concentration of impurity elements included in an oxide semiconductor film in the vicinity of a gate insulating film is reduced. Further, crystallinity of the oxide semiconductor film in the vicinity of the gate insulating film is improved. A semiconductor device includes an oxide semiconductor film over a substrate, a source electrode and a drain electrode over the oxide semiconductor film, a gate insulating film which includes an oxide containing silicon and is formed over the oxide semiconductor film, and a gate electrode over the gate insulating film. The oxide semiconductor film includes a region in which the concentration of silicon is lower than or equal to 1.0 at. %, and at least the region includes a crystal portion.

Abstract: A recess is formed at a semiconductor layer of a device to define a plurality of mesas. An active trench portion of the recess residing between adjacent mesas. A termination portion of the trench residing between the end of each mesa and a perimeter of the recess. The transverse spacing between the mesas and the lateral spacing between the mesas and an outer perimeter of a recess forming the mesas are substantially the same. A shield structure within the trench extends from the region between the mesas to the region between the ends of the mesas and the outer perimeter of the recess forming the mesas. A contact resides between a shield electrode terminal and the shield portion residing in the trench.

Abstract: An organic electroluminescence display device including pixels, a first bank provided between the pixels and covering a periphery edge part of a pixel electrode, a second bank provided on a first upper surface of the first bank and including a second upper surface and a first side surface, an auxiliary wiring provided on the second upper surface and including a third upper surface and a second side surface, an organic electroluminescence layer in contact with the pixel electrode, the first and second banks, and the auxiliary wiring, a common pixel electrode bridging the pixels, the organic electroluminescence layer includes a first region in contact with the pixel electrode, the first upper surface and the first side surface, and a second region in contact with the auxiliary wiring and separated from the first region, and the common pixel electrode is in contact with the second side surface.

Abstract: In an organic EL display device, an improvement in the performance of a barrier film that blocks entry of a substance that causes degradation, such as moisture, into an organic electroluminescent element is achieved. The organic EL display device includes the barrier film, which is a stacked film including a barrier base material layer made of silicon oxide or silicon nitride and a base material coating layer in contact with an impregnated barrier base material layer. The barrier film blocks transmission of a substance that degrades the organic electroluminescent element. Nano-ink is applied on a surface of the barrier base material layer, and the barrier base material layer is impregnated with the nano-ink. The barrier base material layer subjected to the impregnation treatment serves as the impregnated barrier base material layer, while the nano-ink after impregnation serves as the base material coating layer.

Abstract: A sensor device and method of making same that includes a silicon substrate with opposing first and second surfaces, a sensor formed at or in the first surface, a plurality of first contact pads formed at the first surface which are electrically coupled to the sensor, and a plurality of cooling channels formed as first trenches extending into the second surface but not reaching the first surface. The cooling channels instead can be formed on one or more separate substrates that are attached to the silicon substrate for cooling the silicon substrate.

Abstract: A multi-finger lateral high voltage transistors (MFLHVT) includes a substrate doped a first dopant type, a well doped a second dopant type, and a buried drift layer (BDL) doped first type having a diluted BDL portion (DBDL) including dilution stripes. A semiconductor surface doped the second type is on the BDL. Dielectric isolation regions have gaps defining a first active area in a first gap region (first MOAT) and a second active area in a second gap region (second MOAT). A drain includes drain fingers in the second MOAT interdigitated with source fingers in the first MOAT each doped second type. The DBDL is within a fingertip drift region associated drain fingertips and/or source fingertips between the first and second MOAT. A gate stack is on the semiconductor surface between source and drain. The dilution stripes have stripe widths that increase monotonically with a drift length at their respective positions.