Abstract: Aspects of the disclosure include a filter comprising a first interleaved input, a second interleaved input, an output, a first transformer comprising a first primary winding with N1 turns and a first secondary winding with N2 turns, and a second transformer comprising a second primary winding with N3 turns and a second secondary winding with N4 turns, wherein the first primary winding and the second secondary winding are in series with the first interleaved input and the output, and the first secondary winding and the second primary winding are in series with the second interleaved input and the output.

Abstract: An acoustic wave device includes an IDT electrode on a piezoelectric body and the IDT electrode includes first and second busbars, and first and second electrode fingers. A first dielectric film extends from a region between tip end portions of the first electrode fingers and the piezoelectric body to a region between the second busbar and the piezoelectric body with a first gap in between. The second electrode fingers are in direct contact with the piezoelectric body at a center of an overlap width, and a permittivity of the first dielectric film is lower than a permittivity of the piezoelectric body.

Abstract: A single mode cavity filter having at least three rectangular or elliptical resonant cavities and at least four coupling irises aligned along a straight axis is disclosed. The filter is configured to be tuned by way of an electro-mechanical device. The filter has tuning rods located in each of the cavities and configured to change, in use, the tuning of the filter. The tuning rods are aligned along an arcuate axis and the electro-mechanical device is configured to move the tuning rods according to an identical depth by way of a single motor in the electro-mechanical device.

Abstract: An acoustic resonator is fabricated by forming a patterned first photoresist mask on a piezoelectric plate at locations of a desired interdigital transducer (IDT) pattern. An etch-stop layer is then deposited on the plate and first photoresist mask. The first photoresist mask is removed to remove parts of the etch-stop and expose the plate. An IDT conductor material is deposited on the etch stop and the exposed plate. A patterned second photoresist mask is then formed on the conductor material at locations of the IDT pattern. The conductor material is then etched over and to the etch-stop to form the IDT pattern which has interleaved fingers on a diaphragm to span a substrate cavity. A portion of the plate and the etch-stop form the diaphragm. The etch-stop and photoresist mask are impervious to this etch. The second photoresist mask is removed to leave the IDT pattern.

Abstract: An acoustic wave device including a support substrate, a piezoelectric layer provided over the support substrate, at least one pair of comb-shaped electrodes disposed on the piezoelectric layer, each of the at least one pair of comb-shaped electrodes including electrode fingers, a temperature compensation film interposed between the support substrate and the piezoelectric layer, the temperature compensation film having a temperature coefficient of elastic constant opposite in sign to a temperature coefficient of elastic constant of the piezoelectric layer; and an insulating layer interposed between the support substrate and the temperature compensation film, a first surface of the insulating layer having first protruding portions and/or first recessed portions, a second surface of the insulating layer having second protruding portions and/or second recessed portions, the first surface being closer to the support substrate, the second surface being closer to the temperature compensation film.

Abstract: Piston mode Lamb wave resonators are disclosed. A piston mode Lamb wave resonator can include a piezoelectric layer, such as an aluminum nitride layer, and an interdigital transducer on the piezoelectric layer. The piston mode Lamb wave resonator has an active region and a border region, in which the border region has a velocity with a lower magnitude than a velocity of the active region. The border region can suppress a transverse mode.

Abstract: A surface elastic wave filter has resonant cavities and comprises a composite substrate formed of a base substrate and a piezoelectric upper layer; at least one input electroacoustic transducer and an output electroacoustic transducer, arranged on the upper layer, and at least one internal reflecting structure, arranged between the input electroacoustic transducer and the output electroacoustic transducer. The internal reflecting structure comprises a first structure comprising at least one reflection grating having a first period and a second structure comprising at least one reflection grating having a second period, the first period being greater than the second period.

Abstract: A filter includes first and second signal terminals, a filter circuit connected between the first and second signal terminals, a substrate having first and second surfaces, the first and second signal terminals being located on the first surface, a part of the filter circuit being located at a side of the second surface, a line located closer to the first surface than the filter circuit in the substrate, a first end of the line being connected to one of the first and second signal terminals, and a ground terminal that is located on the first surface and to which a second end of the line is connected, an area of a region where the line overlaps with the ground terminal being greater than an area of a region where the line overlaps with the one of the first and second signal terminals when the substrate is viewed in plan view.

Abstract: Filter devices. A first chip includes a first base, a first piezoelectric membrane having a first thickness, and a first acoustic Bragg reflector sandwiched between the first piezoelectric membrane and the first base. A first interdigital transducer (IDT) of a first solidly-mounted membrane resonator is formed on a surface of the first piezoelectric membrane. A second chip includes a second base, a second piezoelectric membrane having a second thickness less than the first thickness, and a second acoustic Bragg reflector sandwiched between the second piezoelectric membrane and the second base. A second IDT of a second solidly-mounted membrane resonator is formed on a surface of the second piezoelectric membrane. A circuit card is coupled to the first chip and the second chip, the circuit card including at least one conductor for making an electrical connection between the first IDT and the second IDT.

Abstract: A tunable passband filter including a signal input port for receiving an input radio frequency (RF) signal, a signal output port for transmitting a filtered output RF signal, a first high-pass section having a first tunable microelectromechanical system (MEMS) switch array to receive the input RF signal from the signal input port, a second high-pass section having a second tunable MEMS switch array to transmit the output RF signal to the signal output port, and a low pass section operatively coupled between the first high-pass section and the second high-pass section, and having each of a first tunable MEMS bridge array, a second tunable MEMS bridge array, and a high impedance line. The tunable passband filter is configured to filter the input RF signal to yield the filtered output RF signal.

Abstract: A connector including a first body, a second body, a dielectric film and one or more conductive traces. The first body has first and second opposite sides and includes an elastomeric absorber material with ferrite or iron powder dispersed therein. The second body includes the elastomeric absorber material with ferrite or iron powder dispersed therein. The dielectric film is disposed on surfaces of the first body to extend along and between the first and second opposite sides. The one or more conductive traces are sandwiched between the second body and the dielectric film to extend along and between the first and second opposite sides. The connector can be installed into a conductive aperture, to channel RF energy through it and thus effecting an absorptive RF filter for a signal.

Abstract: A low-pass filter includes first to third inductors and a capacitor. A first inductor-forming conductor layer constituting at least a part of each of the first and second inductors and a second inductor-forming conductor layer including first and second portions constituting first and second inductor portions of the third inductor are connected by a plurality of first through holes. The first portion and a capacitor-forming conductor layer constituting a part of the capacitor are connected by a plurality of second through holes. The second portion and the capacitor-forming conductor layer are connected by a plurality of third through holes.

Abstract: An electronic component includes a stack and first to third inductors. Area of a region obtained by perpendicularly projecting a first space including a first axis and surrounded by the first inductor onto an XZ plane is larger than area of a region obtained by perpendicularly projecting a second space including a second axis and surrounded by the second inductor onto a YZ plane. The third inductor is disposed such that a third axis does not intersect the first space but intersects the second space.

Abstract: A semiconductor device is provided. The semiconductor device incudes: a first sub-semiconductor structure including a dielectric layer; and a second sub-semiconductor structure, at least including a carrier substrate, and being bonded to the first sub-semiconductor structure. The first sub-semiconductor structure or the second sub-semiconductor structure includes a charge accumulation preventing layer, and the charge accumulation preventing layer is disposed between the carrier substrate and the dielectric layer, and is configured to avoid an undesired conductive channel from being generated due to charge accumulation on a surface of the carrier substrate.

Abstract: Multi-mode surface acoustic wave filters are disclosed. A multi-mode surface acoustic wave filter can include a plurality of interdigital transducer electrodes that are longitudinally coupled to each other and stepped acoustic reflectors on opposing sides of the plurality of interdigital transducer electrodes. The acoustic reflectors include acoustic reflector fingers with stepped lengths.

Abstract: A double mode SAW (DMS) filter includes: a plurality of interdigital transducers (IDTs), each having a plurality of Type 1 electrode fingers and a plurality of Type 2 electrode fingers formed on a piezoelectric substrate, wherein one Type 2 electrode finger among the plurality of Type 2 electrode fingers is disposed between two adjacent Type 1 electrode fingers among the plurality of Type 1 electrode fingers, and in a first IDT and a second IDT included in the plurality of IDTs to be adjacent to each other, one Type 1 electrode finger of the second IDT is disposed between two Type 1 electrode fingers of the first IDT. Accordingly, it is possible to provide a DMS filter capable of improving the amount of attenuation in an attenuation band adjacent to the wide band side for the passband and miniaturizing a product by saving space.

Abstract: In an acoustic wave device, an IDT electrode is located on a piezoelectric layer. A high-acoustic-velocity member is positioned on an opposite side of the piezoelectric layer from the IDT electrode. An acoustic velocity of a bulk wave propagating through the high-acoustic-velocity member is higher than an acoustic velocity of an acoustic wave propagating through the piezoelectric layer. A low-acoustic-velocity film is provided between the high-acoustic-velocity member and the piezoelectric layer. An acoustic velocity of a bulk wave propagating through the low-acoustic-velocity film is lower than the acoustic velocity of the bulk wave propagating through the piezoelectric layer. A dielectric film is located on the piezoelectric layer so as to cover the IDT electrode. In the acoustic wave device, a Young's modulus of the dielectric film is larger than a Young's modulus of the low-acoustic-velocity film.

Abstract: The present invention provides a noise filter that can provide a wire linking a power source and a load along a desired path regardless of an installation location of the noise filter. A noise filter is connected to a wire of a wire harness linking a power source and a load and eliminates noise transmitted from the power source to the load. The noise filter includes a housing, a capacitor that is housed inside the housing, a ground terminal that is connected to the capacitor, and a noise filter wire that has a first end connected directly to the capacitor and a second end connected by splicing to a middle portion of the wire of the wire harness.

Abstract: An acoustic resonator device with low thermal impedance has a substrate and a single-crystal piezoelectric plate having a back surface attached to a top surface of the substrate via a bonding oxide (BOX) layer. An interdigital transducer (IDT) formed on the front surface of the plate has interleaved fingers disposed on the diaphragm. The piezoelectric plate and the BOX layer are removed from a least a portion of the surface area of the device to provide lower thermal resistance between the conductor pattern and the substrate.

Abstract: A surface acoustic wave device comprising a base substrate, a piezoelectric layer and an electrode layer in between the piezoelectric layer and the base substrate, a comb electrode formed on the piezoelectric layer comprising a plurality of electrode means with a pitch p, defined asp=A, with A being the wavelength of the standing acoustic wave generated by applying opposite potentials to the electrode layer and comb electrode, wherein the piezoelectric layer comprises at least one region located in between the electrode means, in which at least one physical parameter is different compared to the region underneath the electrode means or fingers. A method of fabrication for such surface acoustic wave device is also disclosed. The physical parameter may be thickness, elasticity, doping concentration of Ti or number of protons obtained by proton exchange.