Abstract: A surface acoustic wave device includes a piezoelectric substrate, an interdigital transducer (IDT) electrode on the substrate, a cover over the substrate and IDT electrode, and hollow spaces between the IDT electrode and the cover. The hollow spaces are defined by partition supports between the substrate and the cover. The partition supports include a first and second partition supports extending in a first direction without contacting each other. The first and second partition supports each include first and second ends along the first direction. The first and second direction perpendicular to the first direction. The first end of the first partition support is closer to an outer periphery of the substrate than is the second end, and the first end of the second partition support is farther away from the outer periphery than is the second end.

Abstract: A liquid crystal phase shifter and an antenna are provided. The liquid crystal phase shifter includes first and second substrates opposite to each other, and a liquid crystal layer therebetween. The first substrate includes a first base plate and a first electrode thereon. The first electrode includes a main body structure on a side of the first base plate distal to the liquid crystal layer and at least one branch structure on a side of the first base plate proximal to the liquid crystal layer. The at least one branch structure is connected to the main body structure, and is spaced apart from each other in a lengthwise direction of the main body structure. The second substrate includes a second base plate and a second electrode thereon, and orthographic projections of the second electrode and the branch structure on the first base plate at least partially overlaps each other.

Abstract: Acoustic wave filter devices are disclosed. A device includes a layer providing or on a topmost layer of an acoustic reflector. The intermediary layer has a first region and a second region. The first region has a first layer thickness and the second region has a second layer thickness different from the first layer thickness. The device includes a first multilayer stack on the first region and a second multilayer stack on the second region of the intermediary layer. Each of the first and the second stacks includes a piezoelectric layer on a counter electrode that is located on the respective region, an input and an output electrode. Application of a radio frequency voltage between the input electrode and the counter electrode layer of the first stack creates acoustic resonance modes in the piezoelectric layer between the input and output electrodes of the first and the second stack.

Abstract: A branch-line coupler, adapted to radio frequency circuits, includes an input port, a first output port, a second output port, an isolated port, a first transmission line, a second transmission line, a first bent branch line, and a second bent branch line. The first transmission line is electrically connected between the input port and the first output port, and carries two open branches. The second transmission line is electrically connected between the isolated port and the second output port, and carries two open branches. The first bent branch line is electrically connected between the input port and the isolated port. The second bent branch line is electrically connected between the first output port and the second output port. The open branches of the first transmission line and the second transmission line resemble the bone structure of a fish skeleton.

Abstract: A multilayer substrate includes a multilayer body, an internal wire, land electrodes, and a ground electrode. The internal wire extends toward the land electrode from a position where the internal wire overlaps the land electrode when viewed from a first surface and is electrically connected to the land electrode by a via conductor. The internal wire is electrically connected to the ground electrode by a via conductor that is provided in a region from a position where a capacitor is located where the via conductor at least partially overlaps the land electrode when viewed from the first surface.

Abstract: An acoustic wave filter includes first and second series-arm resonators, each including an IDT electrode including electrode fingers and a busbar electrode connecting first ends of the electrode fingers to each other. A direction in which second ends of the electrode fingers are aligned with each other crosses a propagation direction of an acoustic wave. The electrode fingers of the IDT electrodes of the first and second series-arm resonators each include an electrode-finger central portion and a wide portion located at the second end and being wider than the electrode-finger central portion. The length of the wide portion of each of the electrode fingers in the first series-arm resonator is greater than the length of the wide portion of each of the electrode fingers in the second series-arm resonator.

Abstract: An electronic component includes a stack and first to fourth inductors. The second inductor is disposed after the first inductor in a ?Y direction. The third inductor and the fourth inductor are disposed after the first inductor and the second inductor, respectively, in a ?X direction. Two or more through hole columns are connected in parallel to a part near each end of a conductor layer portion in each of the first inductor and the fourth inductor in a longitudinal direction. One through hole column is connected to a part near each end of a conductor layer portion in each of the second inductor and the third inductor in a longitudinal direction.

Abstract: An acoustic wave device includes N band pass filters with first ends connected to define a common connection and having different pass bands. At least one of the band pass filters includes acoustic wave resonators including a lithium tantalate film having Euler angles (?LT=0°±5°, ?LT, ?LT=0°±15°), a silicon support substrate, a silicon oxide film between the lithium tantalate film and the silicon support substrate, an IDT electrode, and a protective film. In at least one acoustic wave resonator, a frequency fh1_t(n) satisfies Formula (3) or Formula (4) for all m where m>n: fh1_t(n)>fu(m)??Formula (3); and fh1_t(n)<fl(m)??Formula (4). In Formulas (3) and (4), fu(m) and fl(m) represent the frequencies of the high-frequency end and the low-frequency end of the pass band in the m band pass filters.

Abstract: There is disclosed acoustic resonators and filter devices. An acoustic resonator device includes a piezoelectric plate, and an interdigital transducer (IDT) formed on a front surface of the piezoelectric plate. The IDT includes interleaved fingers. At least one of the interleaved fingers includes a first layer adjacent the piezoelectric plate and a second layer over the first layer, wherein a width of the first layer is constant, and wherein a width of the second layer varies along a length of the at least one interleaved finger.

Abstract: Methods of manufacturing an acoustic wave device are disclosed. An anti-reflection layer can be formed over a conductive layer that is over a piezoelectric layer. The conductive layer can include aluminum, for example. The anti-reflection layer can remain distinct from the conductive layer after a heating process. A photolithography process can pattern an interdigital transducer of the acoustic wave device from one or more interdigital transducer electrode layers that include the conductive layer. The anti-reflection layer can reduce reflection from the conductive layer during the photolithography process.

Abstract: A filter includes an additional circuit including first and second IDT electrode groups connected in multiple stages between first and second input/output terminals, the first IDT electrode group includes first and second IDT electrodes side by side in a propagation direction of an acoustic wave, and the second IDT electrode group includes third and fourth IDT electrodes side by side in the propagation direction. One end of each of the first and second IDT electrodes is respectively connected to the first and second input/output terminals. Other ends of the first and second IDT electrodes are connected in common and to a ground. One ends of the third and fourth IDT electrodes are connected in common. Other ends of the third and fourth IDT electrodes are connected in common. The additional circuit is connected in parallel with at least a portion of a filter circuit.

Abstract: The present application provides a trisection power divider with isolation and a microwave transmission system, where the divider includes a first hybrid ring coupler with a distribution ratio of 1:2 and a second hybrid ring coupler with a distribution ratio of 1:1; a first port of the first hybrid ring coupler is a signal input port; a second port of the first hybrid ring coupler is connected with a first port of the second hybrid ring coupler; a second port of the second hybrid ring coupler, a third port of the second hybrid ring coupler and a third port of the first hybrid ring coupler are three signal output ports of the divider; and the second port of the first hybrid ring coupler is a port with high power.

Abstract: An inductor according to an embodiment of the present invention comprises: a first magnetic body having a toroidal shape, and including a ferrite; and a second magnetic body disposed on an outer circumferential surface or an inner circumferential surface of the first magnetic body, wherein the second magnetic body includes: resin material and a plurality of layers of metal ribbons wound along the circumferential direction of the first magnetic body, wherein the resin material comprises a first resin material disposed to cover an outer surface of the plurality of layers of metal ribbons, and a second resin material disposed in at least a part of a plurality of layers of interlayer spaces.

Abstract: An elastic wave device includes a support substrate made of silicon, a piezoelectric film disposed directly or indirectly on the support substrate, and an interdigital transducer electrode disposed on one surface of the piezoelectric film. A higher-order mode acoustic velocity of propagation through the piezoelectric film is equal or substantially equal to an acoustic velocity Vsi=(V1)1/2 of propagation through silicon or higher than the acoustic velocity Vsi, where Vsi is specified by V1 among solutions V1, V2, and V3 with respect to x derived from Ax3+Bx2+Cx+D=0.

Abstract: A high frequency multilayer filter may include a plurality of dielectric layers and a signal path having an input and an output. The multilayer filter may include an inductor including a conductive layer formed over a first dielectric layer. The inductor may be electrically connected at a first location with the signal path and electrically connected at a second location with at least one of the signal path or a ground. The multilayer filter may include a capacitor including a first electrode and a second electrode that is separated from the first electrode by a second dielectric layer. The multilayer filter has a characteristic frequency that is greater than about 6 GHz.

Abstract: An LC composite component includes a multilayer body including insulating base members that are laminated and include insulating base members on which conductor patterns are provided. Capacitor conductor patterns are provided on insulating base members different from an insulating base member on which a coil conductor pattern is provided, and each include an extending portion overlapping with a line segment connecting a center of a first terminal and a center of a second terminal in a shortest distance as viewed in the lamination direction and projecting portions projecting in directions different from the direction of the line segment, and the projecting portions overlap with linear portions of the coil conductor pattern without overlapping with bent portions thereof as viewed in the lamination direction.

Abstract: A planar radio frequency filter is described, comprising a frequency selective surface (FSS) applied to a substrate. The filter blocks the transmission of electromagnetic waves in at least two independent radio frequency bands. The FSS comprises a periodic array of multipole inclusions with skewed or forked poles to increase packing density. The inclusions comprise four or six primary poles to generate the lower frequency resonance and an additional four or six secondary poles to generate the higher frequency resonance. The secondary inclusions are located between the primary inclusions to tune the higher resonance frequency. The FSS incorporates overlapping parallel conducting segments that overlap to provide an inductive-capacitive path between adjacent inclusions.

Abstract: When a thick frequency adjustment metal film of a tuning fork-type vibration piece is irradiated with a beam on a wafer for frequency coarse adjustment, projections are possibly formed on a roughened end of the frequency adjustment metal film. Such projections are pressurized and pushed down not to chip off under any impact, so that the risk of frequency fluctuations is suppressed.

Abstract: A balun comprising a three-dimensional (3D) printed base. In one embodiment the balun further comprises a piece of copper tape adhered to an outer surface of the 3D printed base.

Abstract: An acoustic wave device includes a piezoelectric substrate including a crystal axis and an IDT electrode. When an acoustic wave propagation direction is a first direction and a direction perpendicular to the first direction is a second direction, the crystal axis of the piezoelectric substrate is inclined toward the second direction with respect to the thickness direction. The IDT electrode includes first and second electrode fingers interdigitated with each other. The portion where the first and second electrode fingers overlap in the first direction is a crossing region. The crossing region includes a center region that is centrally located in the second direction and first and second low-acoustic-velocity regions that are located on both sides of the center region in the second direction and in which the acoustic velocity is lower than the acoustic velocity in the center region. The first and second low-acoustic-velocity regions are asymmetrical.