Abstract: Provided is a plasma processing apparatus including: a plurality of gas supply nozzles which are provided on a wall surface of a processing container and supply process gas toward the inside of the processing container in a radial direction; N microwave introducing modules of which the number disposed in a circumferential direction of a ceiling plate of the processing container so as to introduce microwaves for generating plasma into the processing container, in which N?2; and M sensors provided on the wall surface of the processing container so as to monitor at least any one of electron density Ne and electron temperature Te of the plasma generated in the processing container, in which M equals to N or a multiple of N.

Abstract: In plasma processing, damage on a cover is prevented while thermal effect on an annular frame is suppressed. Plasma processing is applied to a substrate held by a carrier including an annular frame and a holding sheet. There are provided a chamber having a decompressible internal space, a plasma source for generating plasma in the chamber, a stage that is provided in the chamber and places the carrier thereon, and a cover that is placed above the stage to cover the holding sheet and the frame, and has a window penetrating through the thickness of the cover. The cover is made of a material having a high thermal conductivity, and a front face exposed to plasma, at least on the side of the window of the cover, is covered with a protect part made of a material having a low reactivity with plasma.

Abstract: Provided is a plasma processing apparatus that performs a processing on a processing target substrate by applying plasma of a processing gas on the processing target substrate. The plasma processing apparatus includes: a processing container configured to accommodate the processing target substrate; a lower electrode disposed in the processing container to mount the processing target substrate thereon; an upper electrode disposed in the processing container to face the lower electrode with a processing space being interposed therebetween; a high frequency power source configured to apply a high frequency power between the upper electrode and the lower electrode; a main magnet unit including one or more annular main electromagnetic coils arranged around a central axis; and an auxiliary magnet unit configured to form a magnetic field that perpendicularly or obliquely crosses the central axis in the processing space.

Abstract: A method for using a fixture system and a fixture system for holding workpieces or parts to be treated by a plasma assisted vacuum process, the fixture system including magnetic means which generate a magnetic field with a magnetic force which is high enough for holding the workpiece or part. The magnetic means of the fixture system are designed and arranged in such a manner that magnetic field lines of the generated magnetic field are largely confined to the space including the fixture system and the body of the workpiece or part, so that a generation of unintended plasma inhomogeneities caused by the magnetic field lines is avoided.

Abstract: A plasma confinement ring for a plasma chamber comprises a ring-shaped element and a cylindrical element. The ring-shaped element of the plasma confinement ring surrounds a substrate support assembly in the plasma chamber and is arranged along a plane in which a substrate is arranged on the substrate support assembly. The ring-shaped element includes a plurality of orifices. The cylindrical element of the plasma confinement ring extends from an outer edge of the ring-shaped element in a direction perpendicular to the plane in which the substrate is arranged on the substrate support assembly in the plasma chamber. The plasma confinement ring is monolithic.

Abstract: The present disclosure relates to an elementary device for producing a plasma. The elementary device includes a coaxial applicator of microwave power that includes a conductive central core, a conductive external shield surrounding the central core, a medium located between the central core and the shield to propagate microwave energy, and an insulating body. The elementary device further includes a system to couple to a microwave generator and is disposed at the shield. The shield has a proximal end plugged with the insulating body made of dielectric material that is transparent to the microwave energy. The insulating body has an external surface configured to contact and excite a gas located in the interior of a chamber. The insulating body extends exterior wise from the shield and its external surface is nonplanar and protrudes from the shield. The outside diameter of the body decreases from the shield to its tip.

Abstract: A plasma processing device has a chamber that can be depressurized, a plasma source to generate plasma in the chamber, a stage in the chamber on which the conveyance carrier is placed, and a cover on the stage to cover a holding sheet and a frame and including a window portion penetrating a thickness direction. The cover includes an introduction port, a discharge port, and a coolant flow path connecting the introduction port and the discharge port and not overlapping with a region on an inner side of the frame in plan view. The stage includes a supply port communicated with the introduction port to allow supply of coolant to the coolant flow path when the cover is on the stage, and a recovery port communicated with the discharge port to allow recovery of coolant supplied to the coolant flow path when the cover is on the stage.

Abstract: A plasma processing apparatus includes a baffle structure between a mounting table and a processing chamber. The baffle structure has a first member and a second member. The first member has a first cylindrical part extending between the mounting table and the processing chamber, and a plurality of through-holes elongated in the vertical direction is formed in an array in the circumferential direction in the first cylindrical part. The second member has a second cylindrical part having an inner diameter greater than the outer diameter of the cylindrical part for the first member. The second member moves up and down in a region that includes the space between the first member and the processing chamber.

Abstract: Embodiments include a modular high-frequency emission source. In an embodiment, the modular high-frequency emission source includes a plurality of high-frequency emission modules, where each high-frequency emission module comprises an oscillator module, an amplification module, and an applicator. In an embodiment the oscillator module comprises a voltage control circuit and a voltage controlled oscillator. In an embodiment, the amplification module is coupled to the oscillator module. In an embodiment, the applicator is coupled to the amplification module. In an embodiment, each high-frequency emission module includes a different oscillator module.

Abstract: A system for treating an object with plasma includes a vacuum processing chamber having a holder on which the object to be treated is placed, at least two subassemblies each including at least one plasma source able to generate a plasma and being supplied with radio-frequency power Pi and with a gas i of independent flow rate ni. The plasma generated by one of the subassemblies is a partially ionized gas or gas mixture of different chemical nature from the plasma generated by the other subassembly or subassemblies. A process for selectively treating a composite object employing such a device is described.

Abstract: Disclosed is an apparatus for processing substrate which prevents a plasma discharge from being transferred to a substrate so as to minimize damages on the substrate and also minimize deterioration in quality of a thin film deposited on the substrate, wherein the apparatus may include a process chamber for providing a reaction space, and a gas distribution module for dissociating processing gas by the use of plasma, and distributing the dissociated processing gas onto a substrate, wherein the gas distribution module may include a lower frame having a plurality of electrode inserting portions, an upper frame having a plurality of protruding electrodes and processing gas distribution holes, and an insulating plate having a plurality of electrode penetrating portions.

Abstract: In a process chamber in which a substrate is processed, a gas supply unit is in the process chamber and configured to supply a process gas that processes the substrate. A plasma generation unit is in the process chamber and configured to activate the process gas, and a buffer part is configured to form a buffer chamber accommodating at least a part of the plasma generation unit and include a gas supply hole through which the activated process gas is supplied to the substrate. The buffer part includes a groove portion in which a part of the gas supply hole is cut out.

Abstract: The embodiments herein relate to methods and apparatus for performing ion etching on a semiconductor substrate, as well as methods for forming such apparatus. In some embodiments, an electrode assembly may be fabricated, the electrode assembly including a plurality of electrodes having different purposes, with each electrode secured to the next in a mechanically stable manner. Apertures may be formed in each electrode after the electrodes are secured together, thereby ensuring that the apertures are well-aligned between neighboring electrodes. In some cases, the electrodes are made from degeneratively doped silicon, and the electrode assembly is secured together through electrostatic bonding. Other electrode materials and methods of securing may also be used. The electrode assembly may include a hollow cathode emitter electrode in some cases, which may have a frustoconical or other non-cylindrical aperture shape. A chamber liner and/or reflector may also be present in some cases.

Abstract: A microwave plasma source that generates a microwave plasma in a processing space in which a target substrate is processed, includes: a microwave generation part for generating microwave; a waveguide through which the microwave generated by the microwave generation part propagates; an antenna part including a slot antenna having a predetermined pattern of slots formed therein and being configured to radiate the microwave propagating through the waveguide into the processing space and a microwave-transmitting plate being made of a dielectric material and being configured to transmit the microwave radiated from the slots therethrough and supply the microwave into the processing space; a temperature detector for detecting a temperature at a predetermined position in a microwave propagation path leading to the slot antenna; and an abnormality detection part for receiving the temperature detected by the temperature detector and detect an abnormality in the microwave propagation path based on the detected temperatu

Abstract: A plasma processing apparatus includes: a processing container formed by assembling a container upper portion having an upper side wall and a container lower portion having a lower side wall; a stage provided in the container lower portion of the processing container; and a peripheral introduction part configured to be an assembly, configured to be sandwiched between the upper side wall and the lower side wall, and configured to provide a plurality of gas discharge ports arranged in the circumferential direction with respect to an axis passing through a center of the stage, the assembly in which at least two members are assembled, the at least two members forming a gas flow path extending in a circumferential direction with respect to the axis in an interior thereof, in which the peripheral introduction part, the container upper portion and the container lower portion are thermally and electrically connected to each other.

Abstract: A substrate is disposed on a substrate holder within a process module. The substrate includes a mask material overlying a target material with at least one portion of the target material exposed through an opening in the mask material. A plasma is generated in exposure to the substrate. For a first duration, a bias voltage is applied at the substrate holder at a first bias voltage setting corresponding to a high bias voltage level. For a second duration, after completion of the first duration, a bias voltage is applied at the substrate holder at a second bias voltage setting corresponding to a low bias voltage level. The second bias voltage setting is greater than 0 V. The first and second durations are repeated in an alternating and successive manner for an overall period of time necessary to remove a required amount of the target material exposed on the substrate.

Abstract: Systems and related methods are disclosed for atmospheric plasma processing of microelectronic workpieces, such as semiconductor wafers. For disclosed embodiments, a radio frequency (RF) generator generates an RF signal that is distributed to one or more plasma sources within a process chamber. The process chamber has an atmospheric pressure between 350 to 4000 Torr. The plasma sources are then scanned across a microelectronic workpiece to apply plasma gasses generated by the plasma generators to the microelectronic workpiece. The plasma sources can be individually scanned and/or combined in arrays for scanning across the microelectronic workpiece. Linear and/or angular movement can be applied to the plasma sources and/or the microelectronic workpiece to provide the scanning operation. Various implementations are disclosed.

Abstract: A semiconductor manufacturing apparatus includes a first supply part configured to supply a gas including one or more group III elements on a substrate accommodated in a reaction chamber, a second supply part configured to supply a gas including one or more group V elements on the substrate, and a waveguide configured to irradiate a microwave to the gas including the one or more group V elements.

Abstract: An exemplary system may include a chamber configured to contain a semiconductor substrate in a processing region of the chamber. The system may include a first remote plasma unit fluidly coupled with a first access of the chamber and configured to deliver a first precursor into the chamber through the first access. The system may still further include a second remote plasma unit fluidly coupled with a second access of the chamber and configured to deliver a second precursor into the chamber through the second access. The first and second access may be fluidly coupled with a mixing region of the chamber that is separate from and fluidly coupled with the processing region of the chamber. The mixing region may be configured to allow the first and second precursors to interact with each other externally from the processing region of the chamber.

Abstract: Embodiments include wafer and photomask processing equipment. An etch processing system including an endpoint detection system having a light source and a photodetector is described. In an example, the light source emits light toward an alignment region over a substrate support member of an etch chamber, and the photodetector receives a reflection of the light from the alignment region. The reflection is monitored for endpoint and process control. A second light source emits light toward the alignment region, and a camera receives the light to image the alignment region. The image can be used to align the light emitted by the endpoint detection system to a spot location within the alignment region, e.g., within an alignment opening of a substrate mounted on the substrate support member.