Abstract: Methods and apparatus for laterally etching unwanted material from the sidewalls of a recessed feature are described herein. In various embodiments, the method involves etching a portion of the sidewalls, depositing a protective film over a portion of the sidewalls, and cycling the etching and deposition operations until the unwanted material is removed from the entire depth of the recessed feature. Each etching and deposition operation may target a particular depth along the sidewalls of the feature. In some cases, the unwanted material is removed from the bottom of the feature up, and in other cases the unwanted material is removed from the top of the feature down. Some combination of these may also be used.

Abstract: In a plasma processing apparatus including a first radio-frequency power supply which supplies first radio-frequency power for generating plasma in a vacuum chamber, a second radio-frequency power supply which supplies second radio-frequency power to a sample stage on which a sample is mounted, and a matching box for the second radio-frequency power supply, the matching box samples information for performing matching during a sampling effective period which is from a point of time after elapse of a prescribed time from a beginning of on-state of the time-modulated second radio-frequency power until an end of the on-state and maintains a matching state attained during the sampling effective period from after the end of the on-state until a next sampling effective period.

Abstract: A plasma generator is described which employs a partial PBN liner not only to minimise the loss of energetic gas species during film formation but also to reduce boron impurity levels introduced into the growing film relative to the use of a complete PBN liner. The use of such a plasma generator in a film forming apparatus and method of forming a film is also described.

Abstract: An antenna includes a first waveguide configured to guide VHF radio frequency waves, and a second waveguide configured to guide the VHF radio frequency waves supplied from the first waveguide, the second waveguide having a pair of metal reflective plates therein facing each other across a longitudinal distance along the second waveguide, wherein a tip end of the first waveguide is coupled to the second waveguide at a sideways point thereof between the metal reflective plates, and wherein a distance between the metal reflective plates is ?g/4+?g·n/2, ?g being a wavelength of the VHF radio frequency waves in tube, and n being an integer greater than or equal to zero.

Abstract: A sealing structure is between a workpiece or substrate and a carrier for plasma processing. In one example, a substrate carrier has a top surface for holding a substrate, the top surface having a perimeter and a resilient sealing ridge on the perimeter of the top surface to contact the substrate when the substrate is being carried on the carrier.

Abstract: Provided is a plasma processing apparatus including a microwave radiating mechanism configured to radiate microwaves output from a microwave output unit into a processing container. The microwave radiating mechanism includes: an antenna configured to radiate the microwaves; a dielectric member configured to transmit the microwaves radiated from the antenna, and form an electric field for generating surface wave plasma by the microwaves; a sensor provided in the microwave radiating mechanism or adjacent to the microwave radiating mechanism, and configured to monitor electron temperature of the generated plasma; and a controller configured to determine a plasma ignition state based on the electron temperature of the plasma monitored by the sensor.

Abstract: Embodiments of the inventive concepts provide antennas, plasma generating circuits, plasma processing apparatus, and methods for manufacturing semiconductor devices using the same. The circuits include radio-frequency power sources generating radio-frequency powers, antennas receiving the radio-frequency powers to generate plasma and having a first mutual inductance, and inductors connecting the antennas to the radio-frequency power sources, respectively. The inductors have a second mutual inductance reducing and/or canceling the first mutual inductance.

Abstract: An electrode for transmitting radiofrequency power to a plasma processing region includes a plate formed of semiconducting material and a high electrical conductivity layer formed on a top surface of the plate and integral with the plate. The high electrical conductivity layer has a lower electrical resistance than the semiconducting material of the plate. The electrode includes a distribution of through-holes. Each through-hole extends through an entire thickness of the electrode from a top surface of the high electrical conductivity layer to a bottom surface of the plate. In some embodiments, the plate can be formed of a silicon material and the high electrical conductivity layer can be a silicide material formed from the silicon material of the plate.

Abstract: Examples of a substrate processing apparatus includes a chamber, a susceptor provided in the chamber, a flow control ring of an insulator that is mounted on the chamber and surrounds the susceptor, a shower plate opposed to the susceptor, and a metal film that is formed on a lower surface of the flow control ring while exposing an upper surface of the flow control ring, and is in contact with the chamber.

Abstract: Shrouds and substrate treating systems including the same are provided. Substrate treating systems may include a process chamber, a supporter, and a plasma source that is spaced apart from the supporter in a vertical direction. The substrate treating systems may also include a shroud configured to contain the plasma therein. The shroud may include a sidewall portion and a first flange portion extending horizontally from the sidewall portion and including a plurality of first slits that extend through a thickness of the first flange portion. The first flange portion may define a first opening, and a portion of the supporter may extend through the first opening. The sidewall portion may include a plurality of second slits, and each of the plurality of second slits may extend through a thickness of the sidewall portion and may extend from one of the plurality of first slits toward the plasma source.

Abstract: A substrate is disposed on a substrate holder within a process module. The substrate includes a mask material overlying a target material with at least one portion of the target material exposed through an opening in the mask material. A plasma is generated in exposure to the substrate. For a first duration, a bias voltage is applied at the substrate holder at a first bias voltage setting corresponding to a high bias voltage level. For a second duration, after completion of the first duration, a bias voltage is applied at the substrate holder at a second bias voltage setting corresponding to a low bias voltage level. The second bias voltage setting is greater than 0 V. The first and second durations are repeated in an alternating and successive manner for an overall period of time necessary to remove a required amount of the target material exposed on the substrate.

Abstract: A processing reactor includes a microwave energy source and a field-enhancing waveguide. The field-enhancing waveguide has a field-enhancing zone between a first cross-sectional area and a second cross-sectional area of the waveguide, and also has a plasma zone and a reaction zone. The second cross-sectional area is smaller than the first cross-sectional area, is farther away from the microwave energy source than the first cross-sectional area, and extends along a reaction length of the field-enhancing waveguide. The supply gas inlet is upstream of the reaction zone. In the reaction zone, a majority of the supply gas flow is parallel to the direction of the microwave energy propagation. A supply gas is used to generate a plasma in the plasma zone to convert a process input material into separated components in the reaction zone at a pressure of at least 0.1 atmosphere.

Abstract: A plasma processing apparatus for performing a plasma process on a workpiece inside a processing container by radiating microwaves from an antenna into the processing container through a top plate of the processing container to generate plasma, which includes: a pressing member having grooves formed in a surface facing the top plate, and configured to press the antenna against the top plate; and elastic members respectively disposed in the grooves and deformed while being sandwiched between the pressing member and the antenna, and configured to apply a pressing force to the antenna toward the processing container. The grooves and the elastic members are respectively provided in concentric annular regions each having a center coinciding with a predetermined axis perpendicular to the top plate, and the elastic members are disposed only in a portion of the annular regions.

Abstract: Atmospheric pressure plasma devices and methods for preparing the surfaces of fasteners, e.g. nutplates, for adhesive bonding are disclosed. A device supports a fastener to dispose a contact surface of the fastener to receive an atmospheric pressure plasma flow, thereby activating the contact surface to be bonded. A spacer is used to properly support the fastener to receive the plasma treatment. A spacer can comprise beveled edges of a grounded enclosure which electrically connects the contact surface of the fastener to the plasma generator where plasma is formed in a gas flow along the electrodes. Alternately, a spacer can comprise a plurality of standoffs on a showerhead port comprising a ground electrode of the plasma generator where plasma is formed in a gas flow across the electrodes.

Abstract: A plasma generating unit capable of improving in-surface uniformity of plasma and a plasma processing apparatus using the same are provided. The plasma generating unit provided in the plasma processing apparatus includes a dielectric window 16; a slot plate 20 provided on the dielectric window 16; and a coaxial waveguide electrically connected to the slot plate 20 and configured to transmit a microwave. The coaxial waveguide includes an inner conductor 31; and an outer conductor 32 configured to surround the inner conductor 31. The plasma generating unit further includes a pressing component PM configured to elastically press the inner conductor 31 toward the slot plate.

Abstract: Embodiments of the present disclosure include methods and apparatuses utilized to reduce residual film layers from a substrate periphery region, such as an edge or bevel of the substrate. Contamination of the substrate bevel, backside and substrate periphery region may be reduced after a plasma process. In one embodiment, an edge ring includes a base circular ring having an inner surface defining a center opening formed thereon and an outer surface defining a perimeter of the base circular ring. The base circular ring includes an upper body and a lower portion connected to the upper body. A step is formed at the inner surface of the base circular ring and above a first upper surface of the upper body. The step defines a pocket above the first upper surface of the upper body. A plurality of raised features formed on the first upper surface of the base circular ring.

Abstract: Implementations of the present disclosure generally relate to methods and apparatus for generating and controlling plasma, for example RF filters, used with plasma chambers. In one implementation, a plasma processing apparatus is provided. The plasma processing apparatus comprises a chamber body, a powered gas distribution manifold enclosing a processing volume and a radio frequency (RF) filter. A pedestal having a substrate-supporting surface is disposed in the processing volume. A heating assembly comprising one or more heating elements is disposed within the pedestal for controlling a temperature profile of the substrate-supporting surface. A tuning assembly comprising a tuning electrode is disposed within the pedestal between the one or more heating elements and the substrate-supporting surface. The RF filter comprises an air core inductor, wherein at least one of the heating elements, the tuning electrode, and the gas distribution manifold is electrically coupled to the RF filter.

Abstract: Detection accuracy of a power of a progressive wave and detection accuracy of a power of a reflection wave can be improved. In a plasma processing apparatus, a first directional coupler is provided in a first waveguide which is configured to connect a microwave generating unit and a first port of a circulator. A first detector is connected to the first directional coupler. A second port of the circulator is connected to a plasma generating unit via a second waveguide. Further, a second directional coupler is provided in a third waveguide which is configured to connect a third port of the circulator and a dummy load. A second detector is connected to the second directional coupler.

Abstract: A wafer boat is described for the plasma treatment of disc-shaped wafers, in particular semiconductor wafers for semiconductor or photovoltaic applications, which has a plurality of plates positioned parallel to each other made of an electrically conductive material, which have at least one carrier for a wafer on each side which faces another plate and define a receiving space for the wafers on the plates. The wafer boat also has a plurality of spacer elements, which are positioned between directly adjacent plates in order to position the plates parallel to each other, wherein the spacer elements are electrically conductive. Also a plasma treatment apparatus for wafers and a method for the plasma treatment of wafers is described.

Abstract: A wafer support of the present invention includes shield sheet embedded in the ceramic base between the plasma generation electrode and the heater electrode in a state not contacting both the electrodes; and a shield pipe electrically connected to the shield sheet and laid to extend to outside of the ceramic base from the surface of the ceramic base on the side opposite to the wafer placement surface, wherein the wiring member for the plasma generation electrode is inserted through inside of the shield pipe in a state not contacting the shield pipe, and the wiring member for the heater electrode is disposed outside the shield pipe in a state not contacting the shield pipe.