Patents Examined by Rashid Alam
  • Patent number: 8119308
    Abstract: A photomask is disclosed which can suppress deterioration of the depth of focus even in the case where main features are arranged randomly. Sub-features are replaced by a quadrangular sub-feature located inside an external quadrangle which includes as part of its outer periphery the outermost portions of the original sub-features. The sub-feature after the replacement is preferably in a square shape and the length of one side thereof is determined in accordance with the length of the associated external quadrangle. A central position of the sub-feature after the replacement is preferably coincident with the center of the external quadrangle or the center of gravity of the region which includes the original sub-features.
    Type: Grant
    Filed: February 27, 2009
    Date of Patent: February 21, 2012
    Assignee: Renesas Electronics Corporation
    Inventors: Ayumi Minamide, Akemi Moniwa, Junjiro Sakai, Manabu Ishibashi
  • Patent number: 8114556
    Abstract: There are provided a photomask blank which is capable of preventing static buildup caused by electron beam pattern drawing for forming a resist pattern, a photomask blank which provides a good pattern accuracy through optimization of the dry etching rate along the depth direction of the shielding film, and a photomask blank which is capable of reducing the dry etching time by increasing the dry etching rate of the shielding film. The photomask blank of the present invention includes a translucent substrate having thereon a shielding film composed mainly of chromium and the shielding film contains hydrogen. The shielding film is formed in such a manner that the film formation rate of the layer at the surface side is lower than the film formation rate of the layer at the translucent substrate side of the shielding film. The dry etching rate of the shielding film is lower at the translucent substrate side than at the surface side.
    Type: Grant
    Filed: September 8, 2006
    Date of Patent: February 14, 2012
    Assignee: Hoya Corporation
    Inventors: Takeyuki Yamada, Atsushi Kominato, Hiroyuki Iwashita, Masahiro Hashimoto, Yasushi Okubo
  • Patent number: 8114560
    Abstract: The present invention provides a toner containing at least a binder resin, a releasing agent, and a colorant, wherein the binder resin contains at least a polyester resin (A) having a softening point Tm (A) of 120° C. to 160° C., a polyester resin (B) having a softening point Tm (B) of 80° C. or more and less than 120° C. and a composite resin (C) containing a condensation polymerization monomer and an addition polymerization monomer, at least any one of the polyester resins (A) and (B) is a polyester resin prepared by condensation-polymerizing an alcohol component substantially composed of only aliphatic alcohol with a carboxylic acid component, and 65% or more of the alcohol component is 1,2-propanediol.
    Type: Grant
    Filed: May 9, 2008
    Date of Patent: February 14, 2012
    Assignee: Ricoh Company, Ltd.
    Inventors: Shinya Nakayama, Akihiro Kotsugai, Akiyoshi Sabu, Hiroshi Yamashita, Hiroshi Yamada, Junichi Awamura, Tsuyoshi Sugimoto
  • Patent number: 8110323
    Abstract: The present invention provides an optically semitransmissive film that has a near-zero phase shift, has a desired transmissivity, and is relatively thin; a novel phase-shift mask that uses the optically semitransmissive film; a photomask blank that can [be used to] manufacture the phase-shift mask; and a method for designing the optically semitransmissive film. The film is formed on a translucent substrate and transmits a portion of light having a desired wavelength ?, wherein the film has at least one phase-difference reduction layer that fulfills the following functions.
    Type: Grant
    Filed: April 29, 2011
    Date of Patent: February 7, 2012
    Assignee: Hoya Corporation
    Inventors: Yuki Shiota, Osamu Nozawa
  • Patent number: 8101324
    Abstract: A photomask manufacturing method which includes generating data of a main pattern to be transferred onto a substrate, and data of an assist pattern which is arranged adjacent to the main pattern and which assists the transfer of the main pattern without being transferred onto the substrate; performing an optical proximity effect correction to the generated data of the main pattern; correcting shapes of the main pattern and the assist pattern on the basis of a shape change caused at an edge of the main pattern facing the assist pattern by the optical proximity effect correction; and forming a photomask by using the data of the main pattern and of the assist pattern which have been corrected.
    Type: Grant
    Filed: December 9, 2008
    Date of Patent: January 24, 2012
    Assignee: Fujitsu Semiconductor Limited
    Inventor: Kanji Takeuchi
  • Patent number: 8097388
    Abstract: The presently disclosed embodiments are directed to an improved low wear overcoat for an imaging member having a substrate, a charge transport layer, and an overcoat positioned on the charge transport layer, and a process for preparing the same including combining a binder, a hole transport molecule, a melamine formaldehyde crosslinking agent and an acid catalyst dissolved in an alcohol solvent to form an overcoat solution, and subsequently providing the overcoat solution onto the charge transport layer to form an overcoat layer.
    Type: Grant
    Filed: March 14, 2008
    Date of Patent: January 17, 2012
    Assignee: Xerox Corporation
    Inventors: Matthew A. Heuft, Nan-Xing Hu, Jennifer A. Coggan, Vladislav Skorokhod, Yvan Gagnon, Sarah Kavassalis
  • Patent number: 8097387
    Abstract: Described herein are photoreceptor devices that include aligned domains of charge transport materials that have a pi-pi orbital overlap.
    Type: Grant
    Filed: October 1, 2008
    Date of Patent: January 17, 2012
    Assignee: Xerox Corporation
    Inventors: Hany Aziz, Kathy L. De Jong
  • Patent number: 8071261
    Abstract: Lithography masks and methods of manufacture thereof are disclosed. For example, a method of manufacturing a lithography mask includes forming a stack over a substrate. The stack includes bottom attenuated phase shift material layers, intermediate opaque material layers, and finally top resist layers. The method further includes patterning the stack and then trimming the resist layers to uncover a portion of the opaque material layers. The uncovered opaque material layers are subsequently etched followed by removal of any remaining resist layers.
    Type: Grant
    Filed: July 20, 2007
    Date of Patent: December 6, 2011
    Assignee: Infineon Technologies AG
    Inventors: Alois Gutmann, Sajan Marokkey, Henning Haffner, Chandrasekhar Sarma, Haoren Zhuang, Matthias Lipinski
  • Patent number: 8062819
    Abstract: A magenta toner for developing an electrostatic image composed of a binder and a colorant is disclosed. The toner contains a tone controlling agent having a peak of fluorescent spectrum from 380 to 500 nm. An image excellent in light fastness and durability can be obtained and high color reproducibility with sufficient transparency and chromaticness can be realized by the magenta toner.
    Type: Grant
    Filed: March 7, 2008
    Date of Patent: November 22, 2011
    Assignee: Konica Minolta Business Technologies, Inc.
    Inventors: Hiroyuki Yasukawa, Mikio Kouyama, Kenji Hayashi, Hiroaki Obata, Natsuko Kusaka
  • Patent number: 8062816
    Abstract: A photoconductor that includes, for example, a substrate; a first layer like a ground plane layer; an undercoat layer thereover wherein the undercoat layer contains an aminosilane and a phosphonate; a photogenerating layer; and at least one charge transport layer.
    Type: Grant
    Filed: May 30, 2008
    Date of Patent: November 22, 2011
    Assignee: Xerox Corporation
    Inventor: Jin Wu
  • Patent number: 8053148
    Abstract: Provided is a method for fabricating a photomask. A light blocking layer is formed on a transparent substrate having a first region and a second region. A hard mask layer is formed on the light blocking layer. A first polymer film is formed on the hard mask layer. Here, the first polymer film is formed of single strand polymers that can form a complementary binding. A portion of the first polymer film corresponding to the first region is changed to comprise polymers having partial complementary binding. A hard mask pattern for exposing a portion of the light blocking layer under the first polymer film is formed by performing an etching process using the changed portion as an etch stop. A light blocking pattern is formed by removing an exposed portion of the light blocking layer by performing an etching process using the hard mask pattern as an etch mask, and then removing the hard mask pattern.
    Type: Grant
    Filed: December 30, 2008
    Date of Patent: November 8, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventor: Jin Ho Ryu
  • Patent number: 8048589
    Abstract: A method for inspecting a phase shift photomask employs a phase shift photomask having an active pattern region. An optical property of the phase shift photomask is measured within the active pattern region, rather than, for example, a non-active pattern border region. By making the measurement within the active pattern region, performance of the phase shift mask may be properly assured. The method is particularly useful for inspecting attenuated phase shift photomasks to assure absence of side-lobes when photoexposing blanket photoresist layers.
    Type: Grant
    Filed: July 30, 2005
    Date of Patent: November 1, 2011
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yi-Ming Dai, Chien-Hsing Wu, Chi-Hung Liao, Li-Kong Turn
  • Patent number: 8043770
    Abstract: This patent relates to a photomask and a method of forming an overlay vernier of a semiconductor device employing the same. The photomask includes a reticle formed of a first material through which light can transmit, a first pattern formed on the reticle and formed of a material through which light cannot transmit, a second pattern having a size smaller than the first pattern, and an auxiliary pattern formed to come in contact with the first pattern and formed of a second material different from the first material of the reticle. Thus, inclination is formed on side portions of the overlay vernier and a thin film may be easily formed on the overlay vernier.
    Type: Grant
    Filed: June 5, 2008
    Date of Patent: October 25, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventor: Yong Hyun Lim
  • Patent number: 8029963
    Abstract: A charge adjuvant for promoting charging of toner particles comprising a dielectric carrier liquid; and an organic aluminum salt dissolved in the liquid, said organic aluminum salt being soluble in the carrier liquid at room temperature is disclosed. Also disclosed are solutions of the charge adjuvant with a charge director, a method of producing toner utilizing the charge adjuvant and a liquid toner.
    Type: Grant
    Filed: June 6, 2005
    Date of Patent: October 4, 2011
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Yaacov Almog, Avi Koller, Yaffa Israeli
  • Patent number: 8017285
    Abstract: The invention provides a masking process using photoresist, comprising: attaching a compress mask plate to a substrate; coating photoresist in a mask pattern of the compress mask plate; baking the photoresist from the substrate side; removing the compress mask plate from the substrate to form a desired photoresist pattern on the substrate. The inventive method simplifies the photolithography process, thereby the process time is shortened and the yield is increased.
    Type: Grant
    Filed: May 29, 2008
    Date of Patent: September 13, 2011
    Assignee: Beijing BOE Optoelectronics Technology Co. Ltd.
    Inventors: Yunfeng Piao, Chunbae Park
  • Patent number: 8012654
    Abstract: A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.
    Type: Grant
    Filed: June 22, 2010
    Date of Patent: September 6, 2011
    Assignees: Shin-Etsu Chemical Co., Ltd., Toppan Printing Co., Ltd.
    Inventors: Hiroki Yoshikawa, Yukio Inazuki, Satoshi Okazaki, Takashi Haraguchi, Tadashi Saga, Yosuke Kojima, Kazuaki Chiba, Yuichi Fukushima
  • Patent number: 8012662
    Abstract: A method of manufacturing toner including; melting and kneading a mixture including a binder resin and a coloring agent; cooling down the melted and kneaded mixture to provide a cooled mixture; coarsely pulverizing the cooled mixture to provide a coarsely pulverized mixture; finely pulverizing the coarsely pulverized mixture by supplying it via a pulverized material supply to a pulverizer that includes a rotation axis, a rotor attached to the rotation axis, and stators arranged around the rotor with a gap between the stators and the surface of the rotor and that performs pulverization in a circular space formed by the gap; and classifying the finely pulverized material by a classifier into at least fine powder, a toner product and coarse powder, wherein the coarse powder is returned to the pulverized material supply as part of the coarsely pulverized mixture.
    Type: Grant
    Filed: March 13, 2008
    Date of Patent: September 6, 2011
    Assignee: Ricoh Company Limited
    Inventor: Tohru Suganuma
  • Patent number: 8012650
    Abstract: A semiconductor device manufacturing method allowing effective inspection at low cost of a wafer having formed thereon chips. When forming chips on the wafer, a reticle having formed thereon chip patterns, monitor element/circuit patterns and connection patterns is used according to a formation step of the chips. The reticle is constructed such that a part of the monitor element/circuit patterns and the connection patterns are formed in the inner side area of an outer peripheral dicing area and when exposing adjacent shot positions, the pattern is formed on a portion where no outer peripheral dicing areas overlap whereas no pattern is formed on a part of a portion where outer peripheral dicing areas overlap. When using the reticle, a circuit which surrounds the whole chip formation area can be formed with the chips.
    Type: Grant
    Filed: February 9, 2006
    Date of Patent: September 6, 2011
    Assignee: Fujitsu Semiconductor Limited
    Inventor: Toshihiro Wakabayashi
  • Patent number: 8003284
    Abstract: A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.
    Type: Grant
    Filed: June 22, 2010
    Date of Patent: August 23, 2011
    Assignees: Shin-Etsu Chemical Co., Ltd., Toppan Printing Co., Ltd.
    Inventors: Hiroki Yoshikawa, Yukio Inazuki, Satoshi Okazaki, Takashi Haraguchi, Tadashi Saga, Yosuke Kojima, Kazuaki Chiba, Yuichi Fukushima
  • Patent number: 8003288
    Abstract: Disclosed is a photoconductive member including a self-healing composite coating having a polymer matrix, a photoconductive component, a healing material encapsulated within nano- or microcapsules, and an optional catalyst, that is capable of repairing physical damage to the photoconductive member when the capsule ruptures. Also disclosed is photoconductive member including a substrate, an undercoat layer, a charge generating layer, a charge transport layer, and an optional protective overcoat layer; in which one layer of the photoconductive member further includes a healing material encapsulated within nano- or microcapsules and an optional catalyst, and that is capable or reparing physical damage to the photoconductive member when the capsule ruptures. Also disclosed is an imaging forming apparatus including same.
    Type: Grant
    Filed: March 4, 2008
    Date of Patent: August 23, 2011
    Assignee: Xerox Corporation
    Inventors: Kathy L De Jong, Nan-Xing Hu, Giuseppa Baranyi