Abstract: A display device includes a substrate including a display region and a pad region, a driving integrated circuit contacting the substrate at the pad region and including first to third test bumps receiving test signals and a circuit wire connected to each of the first to third test bumps, test pads in the pad region, through which the test signals are provided to the driving integrated circuit and including first to tenth test pads, and connection wires in the pad region, through which the test signals are provided to the test bumps from the test pads and including a first connection wire connecting the first test pad to the first test bump, second and third connection wires connecting the second and third test pads, respectively, to the second test bump, and fourth and fifth connection wires connecting the fourth and fifth test pads, respectively, to the third test bump.

Abstract: A light-emitting element includes a first end portion and a second end portion disposed in a length direction of the light-emitting element, a first electrode corresponding to the first end portion, a first semiconductor layer on the first electrode, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a second electrode on the second semiconductor layer and corresponding to the second end portion. The second electrode includes a first layer on the first semiconductor layer, and a second layer on the first layer. The first semiconductor layer includes a p-type semiconductor layer doped with a p-type dopant. The second semiconductor layer includes an n-type semiconductor layer doped with an n-type dopant. The first electrode is in ohmic contact with the first semiconductor layer. The second electrode is in ohmic contact with the second semiconductor layer.

Abstract: Light emitting structures and methods of fabrication are described. In an embodiment, LED coupons are transferred to a carrier substrate and then patterned to LED mesa structures. Patterning may be performed on heterogeneous groups of LED coupons with a common mask set. The LED mesa structure are then transferred in bulk to a display substrate. In an embodiment, a light emitting structure includes an arrangement of LEDs with different thickness, and corresponding bottom contacts with different thicknesses bonded to a display substrate.

Abstract: The present disclosure provides an array substrate and a display device. The array substrate includes: a sub-pixel, in a display region and including a light-emitting element, the light-emitting element including a first electrode, a light-emitting layer and a second electrode; a positive power line, connected to the first electrode; a positive power bus, connected to the positive power line; three positive power access ends, at a side of the positive power bus away from a display region, and respectively connected to the positive power bus; a negative power line; an auxiliary electrode, respectively connected to the negative power line and the second electrode; three negative power access ends, at the side of the positive power bus away from the display region, and respectively connected to the negative power line; and a negative power auxiliary line, respectively connected to the negative power access end and the auxiliary electrode.

Abstract: A light emitting element includes: a light emitting stack pattern including a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked along one direction; and an insulating film surrounding an outer surface of at least one of the first semiconductor layer, the active layer, and the second semiconductor layer. The insulating film including a zinc oxide (ZnO) thin film layer.

Abstract: According to one embodiment, a display device includes a display panel including a display area for displaying an image, and the display panel includes an insulating substrate, a first electrode, a first organic insulating layer, an inorganic insulating layer, a pixel electrode, a second organic insulating layer, and a pad portion. The inorganic insulating layer includes a first opening for electrically connecting the first electrode to the pixel electrode. The second organic insulating layer includes a second opening for electrically connecting the pixel electrode to the pad portion. The pixel electrode is formed of a transparent conductive material.

Abstract: A micro multi-color LED device includes two or more LED structures for emitting a range of colors. The two or more LED structures are vertically stacked to combine light from the two more LED structures. In some embodiments, each LED structure is connected to a pixel driver and a shared P-electrode. The LED structures are bonded together through bonding layers. In some embodiments, reflection layers are implemented in the device to improve the LED emission efficiency. A display panel comprising an array of the micro tri-color LED devices has a high resolution and a high illumination brightness.

Abstract: A fabrication method of a display device includes the following steps: providing a light-emitting diode (LED) display device including an circuit substrate, first LEDs, and a second LED; detecting the LED display device, wherein the second LED cannot emit light normally; removing the second LED from the circuit substrate; providing a LED substrate; transferring a third LED of the LED substrate to a first transferring substrate; transferring the third LED on the first transferring substrate to a second transferring substrate; and electrically connecting the third LED on the second transposed substrate to the circuit substrate.

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.

Abstract: An adhesive tape for semiconductor processing, which includes a base material, a buffer layer that is provided on at least one surface side of the base material, and an adhesive layer that is provided on the other surface side of the base material. This adhesive tape is configured such that: the buffer layer has a Young's modulus of 10-400 MPa at 23° C. and a rupture energy of 1-9 MJ/m3; and the Young's modulus of the base material at 23° C. is higher than the above-mentioned Young's modulus of the buffer layer.

Abstract: A micro light-emitting diode (LED) display panel including a substrate, a first micro LED, a first light-shielding wall, a second micro LED, and a second light-shielding wall is provided. The substrate includes a plurality of pixel regions arranged in an array. The first micro LED is disposed on one of the pixel regions of the substrate. The first light-shielding wall is disposed on the substrate and located beside the first micro LED. The second micro LED is disposed on the one of the pixel regions of the substrate and located beside the first micro LED. The second light-shielding wall is disposed on the substrate and located beside the second micro LED. A light wavelength of the first micro LED is different from a light wavelength of the second micro LED. A height of the first light-shielding wall is smaller than a height of the second light-shielding wall.

Abstract: A light emission device includes: a wiring board; a plurality of light-emitting elements being disposed on the wiring board and electrically connected to a wiring layer of the wiring board; a first light diffusing member being disposed on the wiring board, the first light diffusing member having a plurality of throughholes and containing a light-diffusive material, each of the plurality of light-emitting elements being disposed in a corresponding one of the plurality of throughholes; a plurality of second light diffusing members covering the plurality of light-emitting elements and being disposed in the plurality of throughholes, each second light diffusing member containing a light-diffusive material, such that a content ratio of the light-diffusive material in each second light diffusing member is higher than a content ratio of the light-diffusive material in the first light diffusing member; and a wavelength converting member.

Abstract: A method of forming a semiconductor device, the method including the steps of providing a metal component having a top surface, and providing a passivation layer over the metal component such that an outer layer of the passivation layer is substantially planar and does not extend below the top surface of the metal component.

Abstract: A display device includes a display layer including pixels each including at least one transistor, a connection wiring electrically connected to the at least one transistor and exposed to a lower surface of the display layer through a first contact hole in the display layer, a base member disposed under the display layer and including a first hole exposing the connection wiring exposed to the lower surface of the display layer, a first lower protective layer disposed on a lower surface of the base member and including a second hole overlapping the first hole, a pad portion disposed on a lower surface of the first lower protective layer, and a lead line disposed on the lower surface of the first lower protective layer and electrically connecting the pad portion and the connection wiring. A tiled display device includes multiple display devices.

Abstract: Described are light emitting diode (LED) devices including a combination of electroluminescent and photo-luminescent active regions in the same wafer to provide LEDs with emission spectra that are adjustable after epitaxial growth. The LED device includes a multilayer anode contact comprising a reflecting metal and at least one transparent conducting oxide layer in between the metal and the p-type layer surface. The thickness of the transparent conducting oxide layer may vary for LEDs fabricated with different emission spectra.

Abstract: A display apparatus is provided. The display apparatus includes a display substrate, a first micro LED module disposed on the display substrate, and a second micro LED module disposed on the display substrate and adjacent to the first micro LED module. The first micro LED module and the second micro LED module have side surfaces facing each other. The side surfaces facing each other of the first micro LED module and the second micro LED module are inclined in an identical direction with respect to an upper surface of the display substrate.

Abstract: Exemplary processing methods include forming a group of LED structures on a substrate layer to form a patterned LED substrate. A light absorption barrier may be deposited on the patterned LED substrate. The methods may further include exposing the patterned LED substrate to light. The light may be absorbed by surfaces of the LED structures that are in contact with the substrate layer, and the light absorption barrier. The methods may still further include separating the LED structures for the substrate layer. The bonding between the LED structures and the substrate layer may be weakened by the absorption of the light by the surfaces of the LED structures in contact with the substrate layer.

Abstract: A semiconductor package includes a base substrate having a first semiconductor substrate, and a first protective layer covering a top side thereof. A first semiconductor chip is on the first protective layer. A first fillet layer fills a space between the first protective layer and the first semiconductor chip. A first side surface of the base substrate extends in a first direction, and second and third side surfaces extend in a second direction. The base substrate includes two corner regions and a side region between the corner regions. A first protective layer in the side region includes a first side trench which overlaps the first semiconductor chip. A part of the first fillet layer fills the first side trench.

Abstract: A display device may include a substrate including pixels; a first bank that defines an emission area of the pixels; a first electrode and a second electrode spaced apart from each other in the emission area; a first insulating layer disposed on the first electrode and the second electrode; light emitting elements disposed on the first insulating layer between the first electrode and the second electrode; a second insulating layer disposed on the first bank; a first opening passing through the first insulating layer; and a second opening passing through the second insulating layer. The first opening and the second opening may overlap the first bank.

Abstract: A method of manufacturing a light-emitting element, includes: providing a base having an upper surface and a lower surface; forming a semiconductor stack on the upper surface; removing part of the semiconductor stack to form an isolation region surrounding the semiconductor stack; forming a dielectric stack covering the semiconductor stack and the isolation region; and applying a first laser having a first wavelength to irradiate the base along the isolation region; wherein the dielectric stack has a reflectance of 10%-50% and/or a transmittance of 50%-90% for the first wavelength.