Abstract: A display device includes first and second internal banks extending in a first direction on a substrate and spaced apart from each other in a second direction different from the first direction; a first electrode including a first main electrode extending in the first direction on a side of the first internal bank and a first sub-electrode extending in the first direction on another side of the first internal bank and at least partially spaced apart from and facing the first main electrode; a second electrode extending in the first direction on a side of the second internal bank and spaced apart from and facing the first main electrode; and a light emitting element disposed between the first internal bank and the second internal bank, and the light emitting element has an end disposed on the first main electrode and another end on the second electrode.

Abstract: In one general aspect, a method can include forming a recess and a mesa in a metal layer associated with a substrate, and disposing a first portion of a conductive-bonding component on the mesa and a second portion of the conductive-bonding component in the recess. The method can include disposing a semiconductor component on the conductive-bonding component such that the second portion of the conductive-bonding component is disposed between an edge of the semiconductor component and a bottom surface of the recess.

Abstract: Aspects of the present disclosure include a light emitting diode (LED) module including a plurality of LEDs, each of the plurality of LEDs being spaced apart from one or more neighboring LEDs by a spacing, a plurality of optics each disposed over a corresponding LED of the plurality of LEDs, each of the plurality of optics having a radius, and a plurality of LED chips disposed within the plurality of LEDs and each having a LED light emitting surface having one or more sides with a length, wherein a ratio of the spacing, the radius, and the length is configured to cause a light emitted from the LED engine to be narrower than 14 degrees and with a relative Cd/lm greater than 10 and with a measured application color uniformity of less than 0.005 Du1v1.

Abstract: Light emitting structures and methods of fabrication are described. In an embodiment, LED coupons are transferred to a carrier substrate and then patterned to LED mesa structures. Patterning may be performed on heterogeneous groups of LED coupons with a common mask set. The LED mesa structure are then transferred in bulk to a display substrate. In an embodiment, a light emitting structure includes an arrangement of LEDs with different thickness, and corresponding bottom contacts with different thicknesses bonded to a display substrate.

Abstract: An SGT MOSFET comprising a substrate, an epitaxial layer, a masking dielectric layer, an interlayer dielectric layer, a source lead-out contact hole, and a source conductive layer and a method for manufacturing the SGT MOSFET are provided. The epitaxial layer is on an upper surface of the substrate and comprises a cellular trench structure, a terminal lead-out structure, a source lead-out structure, a body region, and a source region. The source lead-out structure comprises a source lead-out conductive layer. The masking dielectric layer and the interlayer dielectric layer are sequentially stacked above the epitaxial layer. The source lead-out contact hole penetrates the interlayer dielectric layer and the masking dielectric layer and extends into the source lead-out conductive layer, The source conductive layer fills the source lead-out contact hole. The masking dielectric layer is formed between the interlayer dielectric layer and the epitaxial layer and masks the third dielectric layer.

Abstract: A semiconductor device including a gate electrode structure on a substrate and including gate electrodes spaced apart from each other in a first direction, each gate electrode extending in a second direction; a memory channel structure extending through the gate electrode structure on the substrate, the memory channel structure including a channel extending in the first direction; a charge storage structure surrounding an outer sidewall of the channel; a first filling pattern filling an inner space formed by the channel; and a first capping pattern on the channel and the first filling pattern; and a dummy charge storage structure extending through the gate electrode structure on the substrate, the dummy charge storage structure including a second filling pattern extending in the first direction; a dummy charge storage structure surrounding an outer sidewall of the second filling pattern; and a second capping pattern on the second filling pattern.

Abstract: A display device includes: a display panel including a pixel; and an input sensor on the display panel. The input sensor includes: sensing electrodes; and sensing lines including: a multi-layered area including a first trace line and a second trace line, the first and second trace lines being connected to the sensing electrodes and located at different layers from each other; a single-layer area including a first area and a second area; a first line including the first trace line in the first area, and the second trace line connected to the first trace line in the second area; and a second line adjacent to the first line, the second line including the second trace line in the first area, and the first trace line connected to the second trace line in the second area.

Abstract: An optoelectronic device with a semiconductor body that includes: a bottom cathode structure, formed by a bottom semiconductor material, and having a first type of conductivity; and a buffer region, arranged on the bottom cathode structure and formed by a buffer semiconductor material different from the bottom semiconductor material. The optoelectronic device further includes: a receiver comprising a receiver anode region, which is formed by the bottom semiconductor material, has a second type of conductivity, and extends in the bottom cathode structure; and an emitter, which is arranged on the buffer region and includes a semiconductor junction formed at least in part by a top semiconductor material, different from the bottom semiconductor material.

Abstract: A semiconductor module includes a substrate, a semiconductor die arranged on the substrate, at least one first bond wire loop, wherein both ends of the at least one first bond wire loop are arranged on and coupled to a first electrode of the semiconductor die, and a molded body encapsulating the semiconductor die, wherein a top portion of the at least one first bond wire loop is exposed from a first side of the molded body.

Abstract: A display panel, including a circuit substrate, a light emitting diode, and a reflective layer, is provided. The light emitting diode includes a light emitting layer and first and second semiconductor layers. The light emitting layer is located between the first and second semiconductor layers. The second semiconductor layer is located between the first semiconductor layer and the circuit substrate. The reflective layer is in contact with a part of a side surface of the light emitting diode. A part of the reflective layer is located between the light emitting diode and the circuit substrate. Taking a direction perpendicular to a top surface of the circuit substrate as a height direction, a horizontal height of a top surface of the reflective layer is located between a horizontal height of a top surface of the light emitting layer and a horizontal height of a top surface of the light emitting diode.

Abstract: A light emitting element includes: a light emitting stack pattern including a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked along one direction; and an insulating film surrounding an outer surface of at least one of the first semiconductor layer, the active layer, and the second semiconductor layer. The insulating film including a zinc oxide (ZnO) thin film layer.

Abstract: In a semiconductor structure, a first conductive feature is formed in a trench by PVD and a glue layer is then deposited on the first conductive feature in the trench before CVD deposition of a second conductive feature there-over. The first conductive feature acts as a protection layer to keep silicide from being damaged by later deposition of metal or a precursor by CVD. The glue layer extends along the extent of the sidewall to enhance the adhesion of the second conductive features to the surrounding dielectric layer.

Abstract: The present disclosure provides an array substrate and a display device. The array substrate includes: a sub-pixel, in a display region and including a light-emitting element, the light-emitting element including a first electrode, a light-emitting layer and a second electrode; a positive power line, connected to the first electrode; a positive power bus, connected to the positive power line; two positive power access ends, at a side of the positive power bus away from a display region, and respectively connected to the positive power bus; a negative power line; an auxiliary electrode, respectively connected to the negative power line and the second electrode; four negative power access ends, at the side of the positive power bus away from the display region, and respectively connected to the negative power line; and a negative power auxiliary line, respectively connected to the negative power access end and the auxiliary electrode.

Abstract: A light-emitting element includes a first end portion and a second end portion disposed in a length direction of the light-emitting element, a first electrode corresponding to the first end portion, a first semiconductor layer on the first electrode, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a second electrode on the second semiconductor layer and corresponding to the second end portion. The second electrode includes a first layer on the first semiconductor layer, and a second layer on the first layer. The first semiconductor layer includes a p-type semiconductor layer doped with a p-type dopant. The second semiconductor layer includes an n-type semiconductor layer doped with an n-type dopant. The first electrode is in ohmic contact with the first semiconductor layer. The second electrode is in ohmic contact with the second semiconductor layer.

Abstract: A micro light-emitting display apparatus and a method of manufacturing the same are disclosed The micro light-emitting display apparatus includes a first semiconductor layer, an isolation structure provided on the first semiconductor layer and configured to define a plurality of sub-pixels each configured to emit light, a first light-emitting unit including a first active layer provided in a first sub-pixel among the plurality of sub-pixels, and a second semiconductor layer provided on the first active layer, and a second light-emitting unit including a rod semiconductor layer provided in a second sub-pixel among the plurality of sub-pixels, a second active layer provided on the rod semiconductor layer, and a third semiconductor layer provided on the second active layer. The first active layer is configured to emit blue light and the second active layer is configured to emit green light.

Abstract: A display device including a first substrate structure, a second substrate structure and an adhesive layer is provided by the present disclosure. The first substrate structure includes a first recess. The second substrate structure is disposed opposite to the first substrate structure. The adhesive layer is sandwiched between the first substrate structure and the second substrate structure, wherein a part of the adhesive layer is filled in the first recess.

Abstract: A method for manufacturing a display device can include forming an assembly electrode on a substrate; applying an insulating layer on the assembly electrode; disposing a partition wall on the insulating layer; defining an assembly groove in the partition wall; providing an light emitting diode (LED) having an assembly face corresponding to a shape of the assembly groove in the partition wall; and assembling the assembly face of the LED into the assembly groove in the partition wall, in which the LED includes a first electrode, a first semiconductor layer, an active layer, a second semiconductor layer, and a second electrode stacked in a first direction to form a stacked structure.

Abstract: A display apparatus includes a light-emitting unit including light-emitting elements, and a color unit disposed on the light-emitting unit and including a first color area, a second color area, and a third color area that overlap the light-emitting elements and emit light beams of different colors. The color unit includes a light-transmission layer including a first opening corresponding to the first color area and a second opening corresponding to the second color area, a first color conversion layer disposed within the first opening of the light-transmission layer, a second color conversion layer disposed within the second opening of the light-transmission layer, and a spacer disposed on the light-transmission layer and between two adjacent color areas among the first color area, the second color area, and the third color area, the spacer including a light shielding material.

Abstract: A flexible OLED display device includes a flexible display panel and a support member. The flexible display panel includes an active area, an extension portion and a bending portion connecting the active area and the extension portion. The support member is located between the active area and the extension portion. The active area, the support member and the extension portion are stacked, and a predetermined distance is set between the support member and the bending portion in an extending direction parallel to the extension portion.

Abstract: A semiconductor light-emitting device has an emitter matrix with an arrangement of emitter cells interspersed with non-emitter cells. The emitter cell has a semiconductor emitter, and a non-emitter cell does not have a semiconductor emitter. A number of bond pads for connection to a power supply and a plurality of wirebonds are present. Each wirebond extends from a bond pad to the semiconductor emitter of an emitter cell. An imaging arrangement includes a light source for illuminating a scene. The light source has a pair of such semiconductor light-emitting devices. A method of manufacturing such a semiconductor light-emitting device is also described.