Abstract: Provided are an organic light-emitting display panel and a display device. The organic light-emitting display panel includes: a plurality of organic light-emitting units, a first display area and a second display area. The plurality of organic light-emitting units includes first organic light-emitting units in the first display area and second organic light-emitting units in the second display area. The first organic light-emitting units share a first cathode. The second organic light-emitting units include at least one organic light-emitting unit group, each of the at least one organic light-emitting unit group includes at least one organic light-emitting unit. The at least one organic light-emitting unit in a same organic light-emitting unit group shares a second cathode. The second cathode has a zigzag edge segment.

Abstract: A light emitting device includes a short wavelength light emitting portion, a long wavelength light emitting portion, and a coupling layer combining the short wavelength emitting portion and the long wavelength light emitting portion. Each of the short wavelength light emitting portion and the long wavelength light emitting portion includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The active layer of the long wavelength light emitting portion contains more Indium (In) than the active layer of the short wavelength light emitting portion, and the short wavelength light emitting portion emits light of a shorter wavelength than that of light emitted from the long wavelength light emitting portion.

Abstract: The present disclosure provides an array substrate and a display device. The array substrate includes: a sub-pixel, in a display region and including a light-emitting element, the light-emitting element including a first electrode, a light-emitting layer and a second electrode; a positive power line, connected to the first electrode; a positive power bus, connected to the positive power line; three positive power access ends, at a side of the positive power bus away from a display region, and respectively connected to the positive power bus; a negative power line; an auxiliary electrode, respectively connected to the negative power line and the second electrode; three negative power access ends, at the side of the positive power bus away from the display region, and respectively connected to the negative power line; and a negative power auxiliary line, respectively connected to the negative power access end and the auxiliary electrode.

Abstract: A display device includes subpixels comprising a plurality of first type subpixels and a plurality of second type subpixels, a plurality of electrodes, each comprising an electrode stem portion and at least one electrode protrusion portion, a plurality of light emitting elements having a shape of extending in one direction and disposed on the electrode stem portion of the one electrode and the electrode protrusion portion of the other electrode, and a plurality of first contact electrodes contacting a first end of the light emitting elements and a plurality of second contact electrodes contacting a second end of the light emitting elements, wherein the light emitting elements comprise first type light emitting elements and second type light emitting elements, and the first ends of the first type light emitting elements and the second type light emitting elements face in opposite directions.

Abstract: A vertical power semiconductor transistor device includes: a drain region of a first conductivity type; a body region of a second conductivity type; a drift region of the first conductivity type which separates the body region from the drain region; a source region of the first conductivity type separated from the drift region by the body region; a gate trench extending through the source and body regions and into the drift region, the gate trench including a gate electrode; and a field electrode in the gate trench or in a separate trench. The drift region has a generally linearly graded first doping profile which increases from the body region toward a bottom of the trench that includes the field electrode, and a graded second doping profile that increases at a greater rate than the first doping profile from an end of the first doping profile toward the drain region.

Abstract: Provided is a display device including a base layer, a pixel circuit disposed on the base layer, a pixel electrode electrically connected to the pixel circuit, a middle layer disposed on the pixel electrode and including a polymer resin layer and a conductive layer, a plurality of light emitting diodes disposed on the conductive layer and electrically connected to the pixel electrode, and a common electrode configured to cover the plurality of light emitting diodes and electrically connected to the plurality of light emitting diodes. Each of the plurality of light emitting diodes includes a first electrode, a light generating layer, and a second electrode sequentially stacked in a thickness direction of the base layer.

Abstract: A high electron mobility transistor includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer, wherein the composition of the first III-V compound layer and the second III-V compound layer are different from each other. A source electrode and a drain electrode are disposed on the second III-V compound layer. A gate electrode is disposed on the second III-V compound layer between the source electrode and the drain electrode. An insulating layer is disposed between the drain electrode and the gate electrode and covering the second III-V compound layer. Numerous electrodes are disposed on the insulating layer and contact the insulating layer, wherein the electrodes are positioned between the gate electrode and the drain electrode and a distribution of the electrodes decreases along a direction toward the gate electrode.

Abstract: Disclosed are a structure of a quantum-dot light emitting device including a charge generation junction layer and a method of fabricating the quantum-dot light emitting device. A quantum-dot light emitting device according to an embodiment of the present invention includes a negative electrode, a first charge generation junction layer including a p-type semiconductor layer and an n-type semiconductor layer, a quantum-dot light emitting layer, a hole transport layer, a second charge generation junction layer including a p-type semiconductor layer and an n-type semiconductor layer, and a positive electrode. The first and second charge generation junction layers is formed using a solution process. Accordingly, charge generation and injection can be stabilized, a process time can be shorted, and problems in the work function a positive or a negative electrode of a quantum-dot light emitting device can be addressed.

Abstract: A semiconductor device package and a method for manufacturing a semiconductor device package are provided. The semiconductor device package includes a carrier, a sensor module, a connector, and a stress buffer structure. The sensor module is disposed on the carrier. The connector is connected to the carrier. The stress buffer structure connects the connector to the sensor module.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a top electrode on the MTJ, a trapping layer in the top electrode for trapping hydrogen, a first inter-metal dielectric (IMD) layer on the MTJ, and a first metal interconnection in the first IMD layer and on the top electrode. Preferably, a top surface of the trapping layer is lower than a bottom surface of the first IMD layer.

Abstract: Provided are a light emitting device, a method for manufacturing same, and a display device including the light emitting device.

Abstract: A light source module includes a light-emitting cell, a wiring structure provided on the light-emitting cell and connected to the light-emitting cell, a support structure that is apart from the light-emitting cell with the wiring structure therebetween in a vertical direction, a printed circuit board (PCB) that is apart from the wiring structure with the support substrate therebetween in the vertical direction and overlapping the light-emitting cell in the vertical direction, and at least one insulating film that is apart from the wiring structure in the vertical direction and covering at least one of a first surface of the support substrate, which faces the wiring structure, and a second surface of the support substrate, which faces the PCB.

Abstract: A micro light-emitting device includes a support substrate, at least one micro light-emitting element, and a support structure. The support structure includes a bonding layer, an electrically conductive layer, and a protective insulation layer. The micro light-emitting element is supported by the support structure on the support substrate. The micro light-emitting element includes a light-emitting structure and first and second electrodes. First and second contact regions of the first electrode are respectively connected to a supporting post portion of the electrically conductive layer and a surrounding post portion of the protective insulation layer. A production method of the device and use of the element are also disclosed.

Abstract: In an embodiment a method for manufacturing an optoelectronic semiconductor device includes providing a semiconductor body having an active region configured to generate electromagnetic radiation and a coupling-out surface along a main radiation direction, forming a mask layer having a plurality of recesses on the coupling-out surface on the semiconductor body, depositing metallic separators in the recesses and applying a wavelength conversion element to the coupling-out surface of the semiconductor body such that the metallic separators are at least partially embedded therein.

Abstract: A semiconductor light-emitting device includes a light-emitting pixel region and a pad region, and includes light-emitting structures, a partition wall structure, a passivation structure, and a fluorescent layer, positioned in the light-emitting pixel region, and a pad unit positioned in the pad region. The partition wall structure includes partition walls defining pixel spaces. The passivation structure surrounds the partition walls and includes a first passivation layer including a first insulating material and a second passivation layer including a second insulating material different from the first insulating material. The passivation structure includes a first portion on a top surface of the partition walls, a second portion on a sidewall of the partition walls, and a third portion between the light-emitting structures and the fluorescent layer. A first thickness of the first portion is less than or equal to a second thickness of the second portion.

Abstract: A light-emitting device includes: a light-emitting element; a wiring board that includes: a substrate, and a wiring pattern including: a plating base layer disposed on the substrate so as to have a gap portion that surrounds a first region in which the light-emitting element is mounted, and a plating layer having a groove that surrounds the first region; a first covering member, at least a portion of which is located in the groove and includes: a reflective material containing layer that contains a first reflective material, and a light-transmissive layer formed above the reflective material containing layer; and a light-transmissive member disposed on the first covering member and the light-emitting element.

Abstract: Provided are a mass transfer device and a mass transfer method. The mass transfer device is provided with multiple channels, a first opening of each channel is arranged on a first surface of the mass transfer device, a second opening of each channel is arranged on a second surface of the mass transfer device, and the distances between the channels are gradually increased along a direction from the first surface to the second surface. In the provided mass transfer method, through a laser irradiation mode, the Micro-LEDs are separated from the first substrate and enter the channels of the mass transfer device through the first openings, and falling into Micro-LED to-be-installed positions on a second substrate through the second openings of the channels, thereby transferring the Micro-LEDs from the first substrate to the second substrate.

Abstract: A semiconductor memory device includes a memory cell array disposed over a substrate extending in a first direction and a second direction intersecting with the first direction in a first semiconductor layer, and including a plurality of cell units and at least two via regions that are arranged in the second direction, wherein a width of each of the at least two via regions in the second direction is a multiple of a width of each of the plurality of cell units in the second direction.

Abstract: An interposer-type component carrier includes a stack comprising at least one electrically conductive layer structure and at least one electrically insulating layer structure; a cavity formed in an upper portion of the stack; an active component embedded in the cavity and having at least one terminal facing upwards; and a redistribution structure having only one electrically insulating layer structure above the component. A method of manufacturing an interposer-type component carrier is also disclosed.

Abstract: Display tiles comprising pixel elements on a first surface of a substrate connected by an electrode, a driver located opposite the first surface, and a connector wrapped around an edge surface of the substrate connecting the driver to the pixel elements. Displays comprised of display tiles and methods of manufacturing display tiles and displays are also disclosed.