Abstract: A method for preparing film oxides deposited on a substrate with a resulting grain boundary junction that is atomistically straight. A bicrystal substrate having a straight grain boundary is prepared as a template. The Miller indices h1, k1, h2, k2 of the two grains of the substrate are chosen such that the misorientation angle of the film is equal to arctan k1/h1+arctan k2/h2. The film is grown on the substrate using a layer-by-layer growth mode.

Abstract: The present invention is directed to systems and methods for irradiating regions of a thin film sample(s) with laser beam pulses having different energy beam characteristics that are generated and delivered via different optical paths.

Abstract: A vapor-phase growth apparatus including a reaction furnace, a wafer container disposed in said furnace, a gas supply member, and a heating member, wherein the apparatus is designed to form a grown film on a front surface of the wafer by supplying a source gas in a high temperature state while the heating member heats the wafer in the reaction furnace through the wafer container. The wafer container includes a heat flow control section having a space for disposing a wafer; and a heat flow transmitting section joined to the heat flow control section. The contact heat resistance Rg between the heat flow control section and the heat flow transmitting section is not less than 1.0×10?6 m2K/W to not more than 5.0×10?3 m2K/W. The heat flow control section is made of a material having a coefficient of thermal conductivity 5 to 20 times that of the wafer.

Abstract: A device and process for crystallizing a compound using hydrodynamic cavitation comprising the steps of mixing at least one stream of a feed solution of such compound to be crystallized with at least one stream of an anti-solvent in a nucleating section via collision of the feed solution and the anti-solvent, passing the mixed streams at an elevated pressure through at least one local constriction of flow to create hydrodynamic cavitation thereby causing nucleation and the production of seed crystals, passing the fluid stream containing the seed crystals through an intermediate section to a crystal growth section, passing the fluid stream containing the seed crystals through the crystal growth section at an elevated pressure through at least one local constriction of flow to create hydrodynamic cavitation thereby causing further crystallization of the compound contained in the solution.

Abstract: A method of which includes the steps of introducing an acidic solution containing (V), copper, ferric iron and ferrous iron into a first tank of a series of continuously stirred tank reactors and, in the first tank, adding air to the solution; heating the solution to an elevated temperature; recycling a portion of selectively precipitated ferric arsenate compounds to the said first tank; and seeding the solution with ferric arsenate compounds.

Abstract: Systems and methods for local synthesis of silicon nanowires and carbon nanotubes, as well as electric field assisted self-assembly of silicon nanowires and carbon nanotubes, are described. By employing localized heating in the growth of the nanowires or nanotubes, the structures can be synthesized on a device in a room temperature chamber without the device being subjected to overall heating. The method is localized and selective, and provides for a suspended microstructure to achieve the thermal requirement for vapor deposition synthesis, while the remainder of the chip or substrate remains at room temperature. Furthermore, by employing electric field assisted self-assembly techniques according to the present invention, it is not necessary to grow the nanotubes and nanowires and separately connect them to a device. Instead, the present invention provides for self-assembly of the nanotubes and nanowires on the devices themselves, thus providing for nano-to micro-integration.

Abstract: Shaped nanocrystal particles and methods for making shaped nanocrystal particles are disclosed. One embodiment includes a method for forming a branched, nanocrystal particle. It includes (a) forming a core having a first crystal structure in a solution, (b) forming a first arm extending from the core having a second crystal structure in the solution, and (c) forming a second arm extending from the core having the second crystal structure in the solution.

Abstract: The invention provides a biopolymer crystal mounting device with which a biopolymer crystal having been grown in a solution containing a biopolymer can be taken out of the solution. The device can be manufactured efficiently without requiring labors and can be mass-produced with high yield. A biopolymer crystal mounting device comprises: a film member 12, which is made of a material possessing permeability to an electromagnetic wave, and which is integrally formed of a loop portion 16 holding a drop of solution containing a biopolymer crystal, a neck portion 18 and a body portion 20; and a tubular member 14 including a bearing hole 22 in which the body portion of the film member is inserted and supported. Further, the film member is inserted into and secured to the tubular member.

Abstract: A process for manufacturing a quartz crystal element consists of the steps of producing plural quartz layers on a surface of a crystalline substrate having a lattice constant differing from that of quartz crystal, in which each of the quartz layers consists of a crystalline phase and an amorphous phase, and percentage of the crystalline phase in the quartz layer farther from the substrate is larger than percentage of the crystalline phase in the quartz layer adjacent to the substrate; and producing an epitaxially grown quartz crystal film on the surface of the quartz layer farther from the substrate by a reaction between silicon alkoxide and oxygen.

Abstract: A crystallization apparatus according to the present invention includes a first irradiation system which irradiates a predetermined area on a glass substrate having an irradiation target, i.e., an a-Si thin film with light beams having a substantially homogeneous light intensity distribution, and a second irradiation system which irradiates the predetermined area with light beams having a light intensity distribution with an inverse peak pattern that a light intensity is increased toward the periphery from an area in which the light intensity is minimum.

Abstract: An object is to provide an ultraviolet light-emitting device in which a p-type semiconductor which has high conductivity and an emission peak in ultraviolet region, and emits light efficiently is used. The p-type semiconductor is prepared by supplying a p-type impurity raw material at the same time or after starting supply of predetermined types of crystal raw materials, besides before starting supply of other types of crystal raw materials than the predetermined types of crystal raw materials in one cycle wherein all the types of crystal raw materials of the plural types of crystal raw materials are supplied in one time each in case of making crystal growth by supplying alternately the plural types of crystal raw materials in a pulsed manner.

Abstract: In a method of producing a lithium niobate substrate by the use of a lithium niobate crystal grown by the Czochralski process, the lithium niobate crystal is heat-treated at a temperature of from 300° C. or more to less than 500° C. in the state the lithium niobate crystal is buried in a powder constituted of at least one element selected from the group consisting of Al, Ti, Si, Ca, Mg and C, or in the state the lithium niobate crystal is held in a container constituted of at least one element selected from the group consisting of Al, Ti, Si, Ca, Mg and C.

Abstract: A static fluid and a second fluid are placed into contact along a microfluidic free interface and allowed to mix by diffusion without convective flow across the interface. In accordance with one embodiment of the present invention, the fluids are static and initially positioned on either side of a closed valve structure in a microfluidic channel having a width that is tightly constrained in at least one dimension. The valve is then opened, and no-slip layers at the sides of the microfluidic channel suppress convective mixing between the two fluids along the resulting interface. Applications for microfluidic free interfaces in accordance with embodiments of the present invention include, but are not limited to, protein crystallization studies, protein solubility studies, determination of properties of fluidics systems, and a variety of biological assays such as diffusive immunoassays, substrate turnover assays, and competitive binding assays.

Abstract: Novel uses of diamondoid-containing materials in the field of microelectronics are disclosed. Embodiments include, but are not limited to, thermally conductive films in integrated circuit packaging, low-k dielectric layers in integrated circuit multilevel interconnects, thermally conductive adhesive films, thermally conductive films in thermoelectric cooling devices, passivation films for integrated circuit devices (ICs), and field emission cathodes. The diamondoids employed in the present invention may be selected from lower diamondoids, as well as the newly provided higher diamondoids, including substituted and unsubstituted diamondoids. The higher diamondoids include tetramantane, peritamantane, hexamantane, heptamantane, octamantane, nonamantane, decamantane, and undecamantane.

Abstract: Novel uses of higher diamondoids are disclosed. Specifically, higher diamondoids may be used to nucleate diamond films and diamond-like carbon films. Such higher diamondoids include iso-tetramantane [1(2)3], anti-tetramantane [121], the two enantiomers of skew-tetramantane [123], the ten possible pentamantane, the thirty nine possible hexamantanes, the one hundred sixty heptamantanes, as well as the various octamantanes, nonamantanes, decamantanes, and undecamantanes.

Abstract: Patterned zinc-oxide nanostructures are grown without using a metal catalyst by forming a seed layer of polycrystalline zinc oxide on a surface of a substrate. The seed layer can be formed by an atomic layer deposition technique. The seed layer is patterned, such as by etching, and growth of at least one zinc-oxide nanostructure is induced substantially over the patterned seed layer by, for example, exposing the patterned seed layer to zinc vapor in the presence of a trace amount of oxygen. The seed layer can alternatively be formed by using a spin-on technique, such as a metal organic deposition technique, a spray pyrolisis technique, an RF sputtering technique or by oxidation of a zinc thin film layer formed on the substrate.

Abstract: Disclosed herein are nanostructures comprising distinct dots and rods coupled through potential barriers of tuneable height and width, and arranged in three dimensional space at well defined angles and distances. Such control allows investigation of potential applications ranging from quantum information processing to artificial photosynthesis.

Abstract: Photonic crystal units (10a, 10b, and 10c) are formed by an optical molding process using a photocurable resin, and partitions (11) are provided at the boundaries therebetween. The voids in each photonic crystal unit are filled with a second substance containing ceramic particles dispersed therein to form a filled portion 2. A plurality of three-dimensional periodic structure units containing the first and second substances distributed with three-dimensional periodicity are arranged so as to have different ratios between the dielectric constants of the first and second substances. Therefore, present invention provides a three-dimensional periodic structure having a wide photonic band gap which could not be obtained in a conventional three-dimensional periodic structure.

Abstract: A vapor transport growth process for bulk growth of high quality gallium nitride for semiconductor applications is disclosed. The method includes the steps of heating a gallium nitride source material, a substrate suitable for epitaxial growth of GaN thereon, ammonia, a transporting agent that will react with GaN to form gallium-containing compositions, and a carrier gas to a temperature sufficient for the transporting agent to form volatile Ga-containing compositions from the gallium nitride source material. The method is characterized by maintaining the temperature of the substrate sufficiently lower than the temperature of the source material to encourage the volatile gallium-containing compositions to preferentially form GaN on the substrate.

Abstract: Dotted seeds are implanted in a regular pattern upon an undersubstrate. A GaN crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocations from neighboring regions, accumulate the dislocations into pit bottoms, and make closed defect accumulating regions (H) on the seeds. The polycrystalline or slanting orientation single crystal closed defect accumulating regions (H) induce microcracks due to thermal expansion anisotropy. The best one is orientation-inversion single crystal closed defect accumulating regions (H). At an early stage, orientation-inverse protrusions are induced on tall facets and unified with each other above the seeds. Orientation-inverse crystals growing on the unified protrusions become the orientation-inverse single crystal closed defect accumulating regions (H).