Abstract: A CdTe single crystal, wherein chlorine concentration in the crystal is between 0.1 and 5.0 ppmwt and resistivity at room temperature is not less than 1.0×109 ?·cm is obtained by growing the crystal according to one of a vertical gradient freezing method, a horizontal gradient freezing method, a vertical Bridgman method, a horizontal Bridgman method, and a liquid encapsulated Czochralski method by using a CdTe polycrystal, in which 50 to 200 ppmwt of chlorine is doped, as a raw material.

Abstract: A method of forming a tungsten nucleation layer using a sequential deposition process. The tungsten nucleation layer is formed by reacting pulses of a tungsten-containing precursor and a reducing gas in a process chamber to deposit tungsten on the substrate. Thereafter, reaction by-products generated from the tungsten deposition are removed from the process chamber. After the reaction by-products are removed from the process chamber, a flow of the reducing gas is provided to the process chamber to react with residual tungsten-containing precursor remaining therein. Such a deposition process forms tungsten nucleation layers having good step coverage. The sequential deposition process of reacting pulses of the tungsten-containing precursor and the reducing gas, removing reaction by-products, and than providing a flow of the reducing gas to the process chamber may be repeated until a desired thickness for the tungsten nucleation layer is formed.

Abstract: This invention disclosure describes methods for the fabrication metal oxide films on surfaces by topotactic anion exchange, and laminate structures enabled by the method. A precursor metal-nonmetal film is deposited on the surface, and is subsequently oxidized via topotactic anion exchange to yield a topotactic metal-oxide product film. The structures include a metal-oxide layer(s) and/or a metal-nonmetal layer(s).

Abstract: An effective, simple and low-cost a method for growing single crystals of perovskite oxideshaving primary and secondary abnormal grain growths according to temperature condition higher than a determined temperature or an atmosphere of heat treatment, involves a perovskite seed single crystal being adjoined to a polycrystal of perovskite oxides and heating the adjoined combination whereby the seed single crystal grows into the polycrystal at the interface therebetween repressing secondary abnormal grain growths inside the polycrystal. 1) The composition ratio of the polycrystal is controlled and/or the specific component(s) of the polycrystal is(are) added in an excess amount compared to the amount of the component(s) of the original composition of the polycrystal, 2) the heating is performed in the temperature range which is over primary abnormal grain growths completion temperature and below secondary abnormal grain growths activation temperature, whereby the seed single crystal grows continuously.

Abstract: Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased concentration of one or more impurities (such as boron and/or isotopes of carbon), as compared to other layers or comparable layers without such impurities. Such compositions provide an improved combination of properties, including color, strength, velocity of sound, electrical conductivity, and control of defects. A related method for preparing such a composition is also described., as well as a system for use in performing such a method, and articles incorporating such a composition.

Abstract: A drop tube type particulate crystalline body producing device is a device for creating a substantially spherical crystalline body by solidifying a particulate melt of an inorganic material while allowing it to free-fall inside a drop tube. This device 1 has a melt formation device 2, drop tube 3, gas flow formation means for forming inside the drop tube 3 a gas flow of cooling gas, and recovery mechanism 5 for recovering a crystalline body 25a from the lower end of the drop tube 3. The drop tube 3 comprises an introducing tube 30, cooling tube 31, and solidification tube 32, where the cooling tube 31 is configured such that the cross sectional area thereof becomes smaller toward the bottom such that the cooling gas flow speed becomes substantially equal to the free fall speed of the particulate melt, and the solidification tube 32 is connected to the lower end of the cooling tube 31 and has a cross sectional area enlarged discontinuously from the lower end of the cooling tube 31.

Abstract: High throughput screening of crystallization of a target material is accomplished by simultaneously introducing a solution of the target material into a plurality of chambers of a microfabricated fluidic device. The microfabricated fluidic device is then manipulated to vary the solution condition in the chambers, thereby simultaneously providing a large number of crystallization environments. Control over changed solution conditions may result from a variety of techniques, including but not limited to metering volumes of crystallizing agent into the chamber by volume exclusion, by entrapment of volumes of crystallizing agent determined by the dimensions of the microfabricated structure, or by cross-channel injection of sample and crystallizing agent into an array of junctions defined by intersecting orthogonal flow channels.

Abstract: The present invention relates to a method for diamond coating of substrates in which the substrate is exposed in a vacuum atmosphere to a reactive gas mixture excited by means of a plasma discharge, the plasma discharge comprising a plasma beam (14) in an evacuated receiver (16) that is formed between a cathode chamber (1) and an anode (2), and the reactive gas mixture comprising a reactive gas and a working gas, the reactive gas in (9) and the working gas in (8) and/or (9) introduced into the receiver, and the receiver (16) is evacuated by a pump arrangement (15), and the hydrogen concentration of the reactive gas mixture being 0–45 vol. %.

Abstract: Formation of a layer of material on a surface by atomic layer deposition methods and systems includes using electron bombardment of the chemisorbed precursor.

Abstract: A semiconductor light emitting device comprises: a substrate; an n-type layer provided on the substrate and made of a nitride semiconductor material; a multiple quantum well structure active layer including a plurality of well layers each made of InxGa(1-x-y)AlyN (0?x, 0?y, x+y<1) and a plurality of barrier layers each made of InaGa(1-a-t)AltN (0?s, 0?t, s+t<1), the multiple quantum well structure active layer being provided on the n-type layer; and a p-type layer provided on the multiple quantum well structure active layer and made of a nitride semiconductor material. The p-type layer contains hydrogen, and the hydrogen concentration of the p-type layer is greater than or equal to about 1×1016 atoms/cm3 and less than or equal to about 1×1019 atoms/cm3.

Abstract: A temperature- and evaporation-controlled device for the crystallization of proteins from a protein-containing solution. The device comprises a compartment, such as a microcapillary tube, for holding the solution from which crystals are formed. The compartment is in communication with a cold generating unit, such as a cold finger, that maintains a temperature lower than the temperature of the compartment thereby causing de-watering of the solution. A vacuum pump can be attached to the device to reduce vapor pressure to further promote de-watering of the solution. The device can be used terrestrially or in a microgravity environment, such as in outer space, for formation of high quality protein crystals.

Abstract: The invention relates to an apparatus for the purification of a substance from a solution, a suspension or a mixture of liquids by crystallization, preferably in a continuous manner. The apparatus comprises a first crystallizer (1c) comprising an input (1) for receiving a liquid comprising the substance and an output (4) for discharging a slurry of liquid and crystals. The apparatus comprises also a first separator (1s) connected to the output 4 of the first crystallizer (1c) having a product output (2), and being with a residue output (5) connected to an input of a second crystallizer (2c), and a second separator (2s) being with an input connected to an output (6) of the second crystallizer (2c), a crystal output (7) of the second separator (2s) being connected to an input of the first crystallizer (1c).

Abstract: A method of forming an epitaxial layer of uniform thickness is provided to improve surface flatness. A substrate is first provided and a Si base layer is then formed on the substrate by epitaxy. A Si—Ge layer containing 5 to 10% germanium is formed on the Si base layer by epitaxy to normalize the overall thickness of the Si base layer and the Si—Ge layer containing 5 to 10% germanium.

Abstract: A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure medium. The crystal and the pressure medium are disposed in a high pressure cell and placed in a high pressure apparatus, for processing under reaction conditions of sufficiently high pressure and high temperature for a time adequate for one or more of removing defects or relieving strain in the single crystal.

Abstract: In a device and a method for measuring the position of the liquid surface of a melt while a single crystal is being pulled, two measuring-lines are defined in an image of a fusion ring which is captured by means of a two-dimensional CCD camera, the intersections of the respective measuring lines and the fusion ring, on the opposite sides of the fusion ring, are detected, and the central position of the single crystal is calculated based on the intervals between the intersections on the opposite sides of the fusion ring, whereby the position of the liquid surface of the melt is determined.

Abstract: A method of producing a single crystal CVD diamond of a desired color which includes the steps of providing single crystal CVD diamond which is colored and heat treating the diamond under conditions suitable to produce the desired color. Colors which may be produced are, for example, in the pink-green range.

Abstract: A terbium type paramagnetic garnet single crystal having a high Faraday effect and a high light transmission factor even in a visible range, as well as a high Verdet constant. A magneto-optical device containing the terbium type paramagnetic garnet single crystal. The terbium type paramagnetic garnet single crystal contains at least terbium, at least one element of aluminum and gallium, and a part of the terbium is replaced by at least one element of cerium and praseodymium.

Abstract: The present invention relates to an anisotropic films and method for obtaining the same. The film comprises substrate and at least one modified conjugated aromatic crystalline layer deposited onto said substrate. The said layer is characterized by globally ordered crystalline structure with intermolecular spacing of 3.4±0.3 ? along one of optical axes. The modified conjugated aromatic crystalline layer is formed by rodlike supramolecules, which comprise at least one polycyclic organic compound with conjugated ?-system. At least part of the modified conjugated aromatic crystalline layer has electric conductivity and is slightly soluble or insoluble in polar solvents. The films are useful in optical applications, such as polarizers and retarders, and in electronic and light emitting devices, such as fiber optics modulators and switches, solar cells, charge-coupled device (CCD), thin film transistor integrated circuits, light emitting diodes, and light emitting displays.

Abstract: A system and method are provided for producing Bisphenol-A (BPA) using direct crystallization of BPA in a single crystallization stage. In one embodiment the method comprises reacting Phenol and Acetone in the presence of a catalyst to form a product solution including Bisphenol-A and Phenol; removing a part of the Phenol from the product solution if required, and providing a selective amount of solvent, so as to obtain a product solution with the desired phase equilibrium behavior; and feeding the product solution with a selective composition to a crystallization stage operated at a selected temperature, so as to recover substantially pure Bisphenol-A in crystal form.

Abstract: This invention provides a high purity silica crucible having low impurity concentration in its inner portion, and its production method. The crucible, in which at least each content of Na and Li being contained in the depth of 1 mm from the inside surface is less than 0.05 ppm, is given by a production method of a high purity silica glass crucible, wherein a purity of the melted silica powder layer is increased by applying a voltage between a mold and an arc electrode to move impurity metals being contained in the melted silica glass layer to the outside, when the silica crucible is produced by arc plasma heating a raw material powder of silica in an inside surface of a hollow rotary mold. The method comprises, keeping an arc electrode potential of within ±500 V during an arc melting, applying a voltage of from ?1000 V to ?20000 V to a mold being insulated to the ground, and applying a high voltage to the un-melted silica powder layer of the outside.