Patents Examined by Robert M Kunemund
  • Patent number: 11408092
    Abstract: A method for heat-treating a silicon single crystal wafer to control a BMD density thereof to achieve a predetermined BMD density by performing an RTA heat treatment on a silicon single crystal wafer composed of an Nv region in a nitriding atmosphere, and then performing a second heat treatment, the method including: formulating a relational equation for a relation between BMD density and RTA temperature in advance; and determining an RTA temperature for achieving the predetermined BMD density according to the relational equation. Consequently, a method for heat-treating a silicon single crystal wafer for manufacturing an annealed wafer or an epitaxial wafer each having defect-free surface and a predetermined BMD density in a bulk portion thereof.
    Type: Grant
    Filed: December 25, 2018
    Date of Patent: August 9, 2022
    Assignee: SHIN-ETSU HANDOTAI CO., LTD.
    Inventors: Wei Feng Qu, Ken Sunakawa, Tadashi Nakasugi
  • Patent number: 11384450
    Abstract: Embodiments disclosed herein include potassium sodium niobate (KNN) films and methods of making such films. In an embodiment, a method of forming a potassium sodium niobate (KNN) film comprises preparing a solution comprising water, potassium hexaniobate salts, and sodium hexaniobate salts. In an embodiment, the solution is spin coated onto a substrate to form a film on at least a portion of a surface of the substrate. In an embodiment, the method may further comprise heat treating the film.
    Type: Grant
    Filed: June 13, 2019
    Date of Patent: July 12, 2022
    Assignee: OREGON STATE UNIVERSITY
    Inventors: Michelle Dolgos, Dylan Fast, May Nyman, Brady J. Gibbons, Matthew O. Clark
  • Patent number: 11377758
    Abstract: A method of creating thin wafers of single crystal silicon, sapphire and similar materials, wherein an ingot of single crystalline material, or a ribbon of single crystalline material is cleaved, in a plane parallel to a surface, with laser light focused to a line in the desired plane of cleavage, near the growing cleavage furrow. The light is of a wavelength that the material is transparent to, but for which the material has strong two- or three-photon absorption. Consequently the light is not appreciably absorbed until it reached the desired focal line. The light is presented in an extremely short pulse, which heats and expands the material at the line focus, before the heat can be dissipated. This expansion creates tangential stresses around the focal line. These stresses are designed to be precisely normal to the growing cleavage furrow.
    Type: Grant
    Filed: November 23, 2020
    Date of Patent: July 5, 2022
    Inventor: Stephen C. Baer
  • Patent number: 11377755
    Abstract: An n-type silicon single crystal production method of pulling up a silicon single crystal from a silicon melt containing red phosphorus as a principal dopant and growing the silicon single crystal by the Czochralski process, the method including: controlling electrical resistivity at a start position of a straight body portion of the silicon single crystal to 0.80 m?cm or more and 1.05 m?cm or less; and sequentially lowering the electrical resistivity of the silicon single crystal as the silicon single crystal is up and grown, thereby adjusting electrical resistivity of a part of the silicon single crystal to 0.5 m?m or more and less than 0.6 m?cm.
    Type: Grant
    Filed: March 29, 2018
    Date of Patent: July 5, 2022
    Assignee: SUMCO CORPORATION
    Inventors: Koichi Maegawa, Yasuhito Narushima, Yasufumi Kawakami, Fukuo Ogawa, Yuuji Tsutsumi
  • Patent number: 11380543
    Abstract: A substrate is provided with a monocrystalline silicon-germanium layer with a first surface covered by a protective oxide obtained by wet process and having a degradation temperature. The protective oxide is transformed into fluorinated salt which is then eliminated. The substrate is placed in a processing chamber at a lower temperature than the degradation temperature and is subjected to a temperature ramp up to a higher temperature than the degradation temperature. The first surface is annealed in a hydrogen atmosphere devoid of silicon, germanium and precursors of the materials forming the target layer. When the temperature ramp is applied, a silicon precursor is inserted in the processing chamber between a loading temperature and the degradation temperature to deposit a monocrystalline buffer layer. A mono-crystalline target layer is deposited by chemical vapour deposition.
    Type: Grant
    Filed: December 17, 2019
    Date of Patent: July 5, 2022
    Assignees: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, UNIVERSITÉ GRENOBLE ALPES, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
    Inventors: Pierre-Edouard Raynal, Pascal Besson, Jean-Michel Hartmann, Virginie Loup, Laurent Vallier
  • Patent number: 11371161
    Abstract: A method of forming an oxide film is provided. The method may include: supplying mist of a solution including a material of the oxide film dissolved therein to a surface of a substrate while heating the substrate at a first temperature so as to epitaxially grow the oxide film on the surface; and bringing the oxide film into contact with a fluid comprising oxygen atoms while heating the oxide film at a second temperature higher than the first temperature after the epitaxial growth of the oxide film.
    Type: Grant
    Filed: June 4, 2020
    Date of Patent: June 28, 2022
    Assignees: DENSO CORPORATION, NATIONAL UNIVERSITY CORPORATION KYOTO INSTITUTE OF TECHNOLOGY
    Inventors: Tatsuji Nagaoka, Hiroyuki Nishinaka, Masahiro Yoshimoto
  • Patent number: 11371164
    Abstract: Provided is a large diameter InP single crystal substrate having a diameter of 75 mm or more, which can achieve a high electrical activation rate of Zn over a main surface of the substrate even in a highly doped region having a Zn concentration of 5×1018 cm?3 or more; and a method for producing the same. An InP single crystal ingot is cooled such that a temperature difference of 200° C. is decreased for 2 to 7.5 minutes, while rotating the InP single crystal ingot at a rotation speed of 10 rpm or less, and the cooled InP single crystal ingot is cut into a thin plate, thereby allowing production of the InP single crystal substrate having an electrical activation rate of Zn of more than 85% over the main surface of the substrate even in a highly doped region having a Zn concentration of 5×1018 cm?3 or more.
    Type: Grant
    Filed: November 9, 2017
    Date of Patent: June 28, 2022
    Assignee: JX NIPPON MINING & METALS CORPORATION
    Inventors: Akira Noda, Keita Kawahira, Ryuichi Hirano
  • Patent number: 11373864
    Abstract: A method of forming an oxide film is provided. The method may include: supplying mist of a solution including a material of the oxide film dissolved therein to a surface of a substrate together with a carrier gas having an oxygen concentration equal to or less than 21 vol % so as to epitaxially grow the oxide film on the surface of the substrate; and bringing the oxide film into contact with a fluid comprising oxygen atoms after the epitaxial growth of the oxide film.
    Type: Grant
    Filed: June 4, 2020
    Date of Patent: June 28, 2022
    Assignees: DENSO CORPORATION, NATIONAL UNIVERSITY CORPORATION KYOTO INSTITUTE OF TECHNOLOGY
    Inventors: Tatsuji Nagaoka, Hiroyuki Nishinaka, Masahiro Yoshimoto
  • Patent number: 11371140
    Abstract: A method for producing a GaN crystal that includes: (i) a seed crystal preparation step of preparing a GaN seed crystal having one or more facets selected from a {10-10} facet and a {10-1-1} facet; and (ii) a growth step of growing GaN from vapor phase on a surface comprising the one or more facets of the GaN seed crystal using GaCl3 and NH3 as raw materials.
    Type: Grant
    Filed: February 18, 2021
    Date of Patent: June 28, 2022
    Assignees: MITSUBISHI CHEMICAL CORPORATION, NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY
    Inventors: Kenji Iso, Akinori Koukitu, Hisashi Murakami
  • Patent number: 11371163
    Abstract: Stabilized, high-doped silicon carbide is described. A silicon carbide crystal is grown on a substrate using chemical vapor deposition so that the silicon carbide crystal includes a dopant and the strain compensating component. The strain compensating component can be an isoelectronic element and/or an element with the same majority carrier type as the dopant. The silicon carbide crystal can then be cut into silicon carbide wafers. In some embodiments, the dopant is n-type and the strain compensating component is selected from a group comprising germanium, tin, arsenic, phosphorus, and combinations thereof. In some embodiments, the strain compensating component comprises germanium and the dopant is nitrogen.
    Type: Grant
    Filed: January 24, 2020
    Date of Patent: June 28, 2022
    Assignee: Wolfspeed, Inc.
    Inventors: Adrian Powell, Al Burk, Michael O'Loughlin
  • Patent number: 11366042
    Abstract: Microfluidic devices and methods for investigating crystallization and/or for controlling a reaction or a phase transition are disclosed. In one embodiment, the microfluidic device includes a reservoir layer; a membrane disposed on the reservoir layer; a wetting control layer disposed on the membrane; and a storage layer disposed on the wetting control layer, wherein the wetting control layer and the storage layer define a microfluidic channel comprising an upstream portion, a downstream portion, a first fluid path in communication with the upstream and the downstream portions, and a storage well positioned within the first fluid path, wherein the wetting control layer includes a fluid passageway in communication with the storage well and the membrane, and wherein the wetting control layer wets a first fluid introduced into the microfluidic channel, the first fluid comprising a hydrophilic, lipophilic, fluorophilic or gas phase as the continuous phase in the microfluidic channel.
    Type: Grant
    Filed: February 8, 2021
    Date of Patent: June 21, 2022
    Assignee: Brandeis University
    Inventors: Seth Fraden, Michael Heymann, Markus Ludwig
  • Patent number: 11352713
    Abstract: Disclosed a heat shield structure for a single crystal production furnace, which is provided above a melt crucible of a single crystal production furnace and comprises an outer housing and a heat insulation plate disposed within the outer housing. A bottom outer surface of the outer housing faces an interior of the melt crucible, and an angle formed between a plane in which the heat insulation plate is located and a plane in which a bottom of the outer housing is located is an acute angle and faces an outer surface of single crystal silicon. The heat shield design is changed, a heat absorbing plate is additionally provided for transferring heat absorbed to the single crystal silicon, a heat channel is formed in the heat shield, so that a pulling rate is controlled, which improves radial mass uniformity of the single crystal silicon.
    Type: Grant
    Filed: December 31, 2020
    Date of Patent: June 7, 2022
    Assignees: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Zing Semiconductor Corporation
    Inventors: Zhongying Xue, Tao Wei, Xing Wei, Zhan Li, Yun Liu, Minghao Li
  • Patent number: 11346017
    Abstract: The present invention relates to single crystalline NaUO3, hydrothermal growth processes of making such single crystals and methods of using such single crystals. In particular, Applicants disclose single crystalline NaUO3 in the R32 space group. Unlike other powdered NaUO3, Applicants' single crystalline NaUO3 has a sufficient crystal size to be characterized and used in the fields of laser light, infrared countermeasures, nuclear fuel material, nuclear forensics and magnetic applications.
    Type: Grant
    Filed: August 23, 2019
    Date of Patent: May 31, 2022
    Assignee: United States of America as represented by the Secretary of the Air Force
    Inventors: James M. Mann, Thomas A. Bowen, Eric J. Plummer
  • Patent number: 11345640
    Abstract: A method and apparatus for producing AlN whiskers includes reduced incorporation of metal particles, an AlN whisker body, AlN whiskers, a resin molded body, and a method for producing the resin molded body. The method for producing AlN whiskers includes heating an Al-containing material in a material accommodation unit to thereby generate Al gas; and introducing the Al gas into a reaction chamber through a communication portion while introducing nitrogen gas into the reaction chamber through a gas inlet port, to thereby grow AlN whiskers on the surface of an Al2O3 substrate placed in the reaction chamber.
    Type: Grant
    Filed: March 16, 2018
    Date of Patent: May 31, 2022
    Assignee: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
    Inventors: Toru Ujihara, Yukihisa Takeuchi, Daishi Shiojiri, Masaki Matsumoto, Hiroshi Saito, Ikuo Hayashi
  • Patent number: 11346019
    Abstract: A quasi-single-crystal film and its manufacturing method thereof are provided, in which a metal film having a preferred orientation of <111> on its surface is subjected to a mechanical stretching force, such that the crystal grains thereof are able to form in a much more orderly arrangement, and a quasi-single-crystal film having preferred orientations on three axes can be obtained. The proposed quasi-single-crystal film has preferred orientations of <211> and <110> on its stretching direction and a direction that is perpendicular to the stretching direction, respectively, and retains a preferred orientation of <111> on its surface. By employing the present invention, it is advantageous of manufacturing large-area quasi single crystal films having high anisotropy as well as growing two dimensional materials or developing of other anisotropic feature structures.
    Type: Grant
    Filed: July 27, 2020
    Date of Patent: May 31, 2022
    Assignee: National Chiao Tung University
    Inventors: Chih Chen, Yu-Jin Li
  • Patent number: 11339500
    Abstract: There is provided a nitride crystal substrate comprising group-III nitride crystal and containing n-type impurities, wherein an absorption coefficient ? is approximately expressed by equation (1) in a wavelength range of at least 1 ?m or more and 3.3 ?m or less: ?=n K?a (1) (wherein, ?(?m) is a wavelength, ?(cm?1) is absorption coefficient of the nitride crystal substrate at 27° C., n (cm?3) is a free electron concentration in the nitride crystal substrate, and K and a are constants, satisfying 1.5×10?19?K?6.0×10?19, a=3).
    Type: Grant
    Filed: April 19, 2018
    Date of Patent: May 24, 2022
    Assignees: SCIOCS COMPANY LIMITED, SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Fumimasa Horikiri, Takehiro Yoshida
  • Patent number: 11342180
    Abstract: A process for epitaxying GaSe on a [111]-oriented silicon substrate, includes a step of selecting a [111]-oriented silicon substrate resulting from cutting a silicon bar in a miscut direction which is one of the three [11-2] crystallographic directions, the miscut angle (?) being smaller than or equal to 0.
    Type: Grant
    Filed: October 5, 2020
    Date of Patent: May 24, 2022
    Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, UNIVERSITE GRENOBLE ALPES
    Inventors: Mickaël Martin, Thierry Baron
  • Patent number: 11332369
    Abstract: A composition (or an aggregate) comprising an epitaxial h-BN/BNNT structure that comprises a hexagonal boron nitride structure that is epitaxial with respect to a boron nitride nanotube structure. Also, a composition (or an aggregate) that comprises independent boron nitride nanotubes, in which a total mass percentage of independent hexagonal boron nitride and residual boron in the composition is not more than 35%. Also, a composition (or an aggregate) in which not more than 1% of independent boron nitride nanotubes and boron nitride nanotube structures have a dixie cup or bamboo defect. Also, a composition in which at least 50% of independent boron nitride nanotubes and boron nitride nanotube structures are single-wall. Also, a method of making a composition that comprises epitaxial h-BN/BNNT structures.
    Type: Grant
    Filed: March 22, 2018
    Date of Patent: May 17, 2022
    Assignee: BNNano, Inc.
    Inventors: Jason Edward Taylor, Mark Edmond, Steven Michael Wilcenski
  • Patent number: 11332849
    Abstract: A method of producing periodic polarization inversion structures requires the provision of first electrode piece part-arrays, each having electrode piece parts on a first main face of a ferroelectric crystal substrate. A voltage is applied on the first electrode piece part-arrays to form first periodic polarization inversion structures. Second electrode piece part-arrays are provided, each having electrode piece parts between the adjacent plural first periodic polarization inversion structures. A voltage is applied on the second electrode piece part-arrays to form second polarization inversion structures.
    Type: Grant
    Filed: March 27, 2019
    Date of Patent: May 17, 2022
    Inventors: Ryosuke Hattori, Shoichiro Yamaguchi, Hidetsugu Shimokata
  • Patent number: 11332848
    Abstract: An embodiment provides a silicon single crystal growth method comprising the steps of: (a) allowing the shoulder of a single crystal to grow vertically; (b) allowing the shoulder to grow horizontally after the vertical growth; and (c) allowing the shoulder to grow in a downward convex shape after the horizontal growth of the shoulder, wherein the shoulder grows at a preset rate on the basis of the final diameter of the shoulder and the shoulder growth height according to steps (b) and (c).
    Type: Grant
    Filed: January 18, 2019
    Date of Patent: May 17, 2022
    Assignee: SK Siltron Co., Ltd.
    Inventors: Jong Min Kang, Il Soo Choi