Patents Examined by Robert M Kunemund
  • Patent number: 11905619
    Abstract: A method of forming a plurality of diamonds provides a base, epitaxially forms a first sacrificial layer on the base, and then epitaxially forms a first diamond layer on the first sacrificial layer. The first sacrificial layer has a first material composition, and the first diamond layer is a material that is different from the first material composition. The method then epitaxially forms a second sacrificial layer on the first diamond layer, and epitaxially forms a second diamond layer on the second sacrificial layer. The second sacrificial layer has the first material composition. The base, first and second sacrificial layers, and first and second diamond layers form a heteroepitaxial super-lattice.
    Type: Grant
    Filed: November 3, 2021
    Date of Patent: February 20, 2024
    Assignee: M7D Corporation
    Inventors: John P. Ciraldo, Jonathan Levine-Miles
  • Patent number: 11905620
    Abstract: Preparations of a highly coherent diamond nitrogen vacancy (NV?) and a diamond anvil are provided. A graphite is used as a carbon source, a diamond is used as a crystal seed, aluminum/titanium is used as a nitrogen remover, and a single crystal diamond is synthesized under a high temperature and a high pressure, and high-pressure-high-temperature (HPHT) annealing is performed on the synthesized diamond; after the annealing, multiple NV?s are generated in <100> and <311> crystal orientation growth regions from scratch, while native NV?s in a <111> crystal orientation growth region are disappeared; and the <100> and <311> crystal orientation growth regions do not contain defects related to ferromagnetic elements. The high-density and highly coherent NV?s are produced under nondestructive conditions, and the diamond anvil with controlled NV? depths are prepared to achieve a precise detection of the NV? at a pressure above 60 GPa.
    Type: Grant
    Filed: May 23, 2023
    Date of Patent: February 20, 2024
    Assignee: QUFU NORMAL UNIVERSITY
    Inventors: Xiaobing Liu, Xiaoran Zhang
  • Patent number: 11896943
    Abstract: Methods of stabilizing DNA-engineered crystals can include cross-linking the hybridized oligonucleotides. Stabilized crystals can have improved chemical and thermal stability.
    Type: Grant
    Filed: May 22, 2020
    Date of Patent: February 13, 2024
    Assignee: NORTHWESTERN UNIVERSITY
    Inventors: Chad A. Mirkin, Seungkyu Lee, Cindy Yizhe Zheng, Katherine E. Bujold
  • Patent number: 11898266
    Abstract: The disclosure provides a method for growing a gallium oxide single crystal by casting and a semiconductor device containing the gallium oxide single crystal. The method includes: 1) heating a solid gallium oxide to complete melting, cooling to a melting point of the gallium oxide, and maintaining a melt state for at least 30 min; and 2) conducting gradient cooling on a gallium oxide melt obtained in step 1) until a solid gallium oxide single crystal is obtained. The gradient cooling is to cool the gallium oxide melt obtained in step 1) to a first temperature according to a first gradient, and then continue cooling to a room temperature according to a second gradient to obtain the gallium oxide single crystal. In step 1), since the solid gallium oxide is heated to the first temperature, oxygen with a volume fraction of at least 2% is present in a growth atmosphere.
    Type: Grant
    Filed: July 13, 2022
    Date of Patent: February 13, 2024
    Assignee: Hangzhou Garen Semiconductor Co., Ltd.
    Inventors: Ning Xia, Hui Zhang, Keke Ma, Yingying Liu, Deren Yang
  • Patent number: 11901177
    Abstract: A perovskite material that has a perovskite crystal lattice having a formula of CxMyXz, and alkyl polyammonium cations disposed within or at a surface of the perovskite crystal lattice; wherein x, y, and z, are real numbers; C comprises one or more cations selected from the group consisting of Group 1 metals, Group 2 metals, ammonium, formamidinium, guanidinium, and ethene tetramine; M comprises one or more metals each selected from the group consisting of Be, Mg, Ca, Sr, Ba, Fe, Cd, Co, Ni, Cu, Ag, Au, Hg, Sn, Ge, Ga, Pb, In, Tl, Sb, Bi, Ti, Zn, Cd, Hg, and Zr, and combinations thereof and X comprises one or more anions each selected from the group consisting of halides, pseudohalides, chalcogenides, and combinations thereof.
    Type: Grant
    Filed: January 23, 2023
    Date of Patent: February 13, 2024
    Assignee: CubicPV Inc.
    Inventors: Michael D. Irwin, Michael Holland, Nicholas Anderson
  • Patent number: 11885037
    Abstract: The present disclosure provides a temperature field device for crystal growth. The temperature field device may include a first drum; a second drum located inside the first drum; a filler filled in a space between the first drum and the second drum; a bottom plate mounted on a bottom of the temperature field device and covering a bottom end of the first drum; and a first cover plate mounted on a top of the temperature filed device and covering a top end of the first drum.
    Type: Grant
    Filed: December 8, 2022
    Date of Patent: January 30, 2024
    Assignee: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
    Inventors: Yu Wang, Weiming Guan, Zhenxing Liang
  • Patent number: 11879185
    Abstract: Aluminum oxide (Al2O3) thin films having a high ?-phase purity and low defect density and methods for making the aluminum oxide thin films are provided. Also provided are epitaxial heterostructures that incorporate the aluminum oxide thin films as growth substrates and methods of forming the heterostructures. The Al2O3 films are pure, or nearly pure, ?-Al2O3. As such, the films contain no, or only a very low concentration of, other Al2O3 polymorph phases. In particular, the Al2O3 films contain no, or only a very low concentration of, the ?-Al2O3 polymorph phase.
    Type: Grant
    Filed: December 7, 2021
    Date of Patent: January 23, 2024
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Chang-Beom Eom, Rui Liu, Paul Gregory Evans, Donald E. Savage, Thomas Francis Kuech
  • Patent number: 11873573
    Abstract: Various embodiments include a device for producing structurally modified materials. In some embodiments, the device includes a floating zone furnace which holds a feed rod in contact with seed crystal. One or more laser diodes are then used to heat a portion of the feed rod and cause it to transition to a molten state. A magnetic field is applied to the floating zone to change the underlying crystal structure of the material as it solidifies upon exiting the floating zone. In some instances, the changes may include manipulating the bond angle of the crystal structure or altering the unit cell volume of the crystal. Changes in the crystal structure directly affect the electrical resistivity and/or the magnetization and other physical properties of the crystal.
    Type: Grant
    Filed: January 21, 2021
    Date of Patent: January 16, 2024
    Assignee: The Regents of the University of Colorado, a body corporate
    Inventor: Gang Cao
  • Patent number: 11866845
    Abstract: Methods for growing single crystal silicon ingots that involve silicon feed tube inert gas control are disclosed. Ingot puller apparatus that include a flange that extends radially from a silicon funnel or from a silicon feed tube to reduce backflow of gases from the silicon feed tube into the growth chamber are also disclosed.
    Type: Grant
    Filed: January 6, 2022
    Date of Patent: January 9, 2024
    Assignee: GlobalWafers Co., Ltd.
    Inventors: Matteo Pannocchia, Maria Porrini
  • Patent number: 11865641
    Abstract: Some variations provide a method of making an additively manufactured single-crystal metallic component, comprising: providing a feedstock comprising a first metal or metal alloy; providing a build plate comprising a single crystal of a second metal or metal alloy; exposing the feedstock to an energy source for melting the feedstock, generating a melt layer on the build plate; and solidifying the melt layer, generating a solid layer (on the build plate) of a metal component. The solid layer is also a single crystal of the first metal or metal alloy. The method may be repeated many times to build the part. Some variations provide a single-crystal metallic component comprising a plurality of solid layers in an additive-manufacturing build direction, wherein the plurality of solid layers forms a single crystal of a metal or metal alloy with a continuous crystallographic texture. The crystal orientation may vary along the additive-manufacturing build direction.
    Type: Grant
    Filed: June 17, 2019
    Date of Patent: January 9, 2024
    Assignee: HRL Laboratories, LLC
    Inventors: John H. Martin, Jacob M. Hundley, Brennan D. Yahata
  • Patent number: 11857930
    Abstract: Provided is a technique for continuously performing poor solvent crystallization or reactive crystallization. A porous membrane in which multiple pores through which a liquid passes are formed internally partitions the treatment container into a first flow space and a second flow space. A raw material liquid supply unit continuously supplies a raw material liquid to the first flow space. A treatment liquid supply unit continuously supplies a treatment liquid to the second flow space at a pressure at which the treatment liquid passes through the porous membrane and enters the first flow space. An extraction unit continuously extracts a mixed liquid of the raw material liquid and the treatment liquid from the first flow space. An aging unit precipitates and grows crystals of a target substance from a mixed liquid.
    Type: Grant
    Filed: June 14, 2018
    Date of Patent: January 2, 2024
    Assignee: JGC Corporation
    Inventors: Masahiro Kawano, Naoki Tahara
  • Patent number: 11859314
    Abstract: A method for preparing large size beta-type ammonium tetramolybdate monocrystal particle includes industrial ammonium molybdate, ammonia, de-ionized water are used to prepare ammonium molybdate solution with concentration of 0.2˜0.6 g/ml; pH is adjusted to 5˜7, temperature is adjusted to the first temperature of 70˜90° C. to obtain the first ammonium molybdate solution; beta-type ammonium tetramolybdate crystal seed is put into crystallization container, and the first ammonium molybdate solution is poured in the crystallization container, to form crystallization system; the crystallization system stands still at room temperature, naturally cooling, the beta-type ammonium tetramolybdate crystal seed grows into large size beta-type ammonium tetramolybdate monocrystal particle. A beta-type ammonium tetramolybdate crystal seed is obtained by constant-temperature crystallization at 70˜90° C.
    Type: Grant
    Filed: June 7, 2022
    Date of Patent: January 2, 2024
    Assignee: ZHENGZHOU UNIVERSITY
    Inventors: Xiaochao Wu, Qingkui Li, Jing Zhang, Kaijun Yang, Chengduo Wang, Jilin He
  • Patent number: 11851782
    Abstract: The present disclosure provides a temperature field device for crystal growth. The temperature field device may include a first drum; a second drum located inside the first drum; a bottom plate mounted on a bottom of the temperature field device and covering a bottom end of the first drum; and a first cover plate mounted on a top of the temperature filed device and covering a top end of the first drum.
    Type: Grant
    Filed: December 7, 2022
    Date of Patent: December 26, 2023
    Assignee: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
    Inventors: Yu Wang, Weiming Guan, Zhenxing Liang
  • Patent number: 11851326
    Abstract: A composition (or an aggregate) comprising a h-BN/BNNT structure that comprises a boron nitride nanotube structure and at least a first hexagonal boron nitride structure. Also, a composition comprising at least a first epitaxial h-BN/BNNT structure and at least one metal adhered to the first epitaxial h-BN/BNNT structure. Also, a composition (or an aggregate) that comprises independent boron nitride nanotubes, in which a total mass percentage of independent hexagonal boron nitride and residual boron in the composition is not more than 35%. Also, a material comprising at least a first hexagonal boron nitride structure and at least a first boron nitride nanotube structure, wherein atoms in the first hexagonal boron nitride structure are epitaxially aligned with atoms in the first boron nitride nanotube structure that are closest to the first hexagonal boron nitride structure.
    Type: Grant
    Filed: April 26, 2022
    Date of Patent: December 26, 2023
    Assignee: BNNano, Inc.
    Inventors: Jason Edward Taylor, Mark Edmond, Steven Michael Wilcenski
  • Patent number: 11851783
    Abstract: The present disclosure provides a temperature field device for crystal growth. The temperature field device may include a drum; a filler filled in the drum and configured to support a crucible; a bottom plate mounted on a bottom of the temperature field device and covering a bottom end of the drum; and a cover plate mounted on a top of the temperature filed device and covering a top end of the drum.
    Type: Grant
    Filed: December 7, 2022
    Date of Patent: December 26, 2023
    Assignee: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
    Inventors: Yu Wang, Weiming Guan, Zhenxing Liang
  • Patent number: 11846037
    Abstract: In a crystal manufacturing method, first, a feedstock including a tapered tip portion is disposed above a crystal growth region. Then, a side surface of the tip portion is selectively heated and melted by radiant heat traveling diagonally upward while a shape of the tip portion is maintained, and the side surface of the tip portion is physically connected to an upper surface of the crystal growth region by a material melted from the side surface. In a crystal manufacturing apparatus, the radiant heat for melting the feedstock is radiated from an electric resistance heater.
    Type: Grant
    Filed: March 23, 2022
    Date of Patent: December 19, 2023
    Assignee: TDK CORPORATION
    Inventors: Katsumi Kawasaki, Jun Arima, Minoru Fujita, Jun Hirabayashi
  • Patent number: 11848206
    Abstract: A method of producing graphene or other two-dimensional material such as graphene including heating the substrate held within a reaction chamber to a temperature that is within a decomposition range of a precursor, and that allows two-dimensional crystalline material formation from a species released from the decomposed precursor; establishing a steep temperature gradient (preferably >1000° C. per meter) that extends away from the substrate surface towards an inlet for the precursor; and introducing precursor through the relatively cool inlet and across the temperature gradient towards the substrate surface. The steep temperature gradient ensures that the precursor remains substantially cool until it is proximate the substrate surface thus minimizing decomposition or other reaction of the precursor before it is proximate the substrate surface. The separation between the precursor inlet and the substrate is less than 100 mm.
    Type: Grant
    Filed: August 23, 2022
    Date of Patent: December 19, 2023
    Assignee: Paragraf Ltd.
    Inventor: Simon Charles Stewart Thomas
  • Patent number: 11840772
    Abstract: Hydrothermal methods for the synthesis of bulk crystals of alkaline earth metal stannates are described. Methods can be utilized for growth of large, single crystals of alkaline earth metal stannates including fully cubic BaSnO3 and SrSnO3.
    Type: Grant
    Filed: January 26, 2022
    Date of Patent: December 12, 2023
    Assignee: Clemson University Research Foundation
    Inventors: Joseph W. Kolis, Rylan J. Terry, Colin D. McMillen
  • Patent number: 11834755
    Abstract: The present application provides a lithium niobate having a p-type nanowire region or an n-type nanowire region and a method for preparing the same. The method includes heating and then cooling a multi-domain lithium niobate crystal to confine hydrogen ions of the multi-domain lithium niobate crystal in domain wall regions; and poling the multi-domain lithium niobate crystal that has been heated by applying a voltage, to reverse a direction of polarization of one or more domains of the multi-domain lithium niobate crystal. The lithium niobate includes a lithium niobate crystal and a p-type nanowire region or an n-type nanowire region located in the lithium niobate crystal and adjacent to a surface of the lithium niobate crystal. The present application also provides a method for converting the charge carrier type of the lithium niobate nanowire region.
    Type: Grant
    Filed: April 25, 2021
    Date of Patent: December 5, 2023
    Assignee: NANKAI UNIVERSITY
    Inventors: Guo-Quan Zhang, Xiao-Jie Wang, Yue-Jian Jiao, Fang Bo, Jing-Jun Xu
  • Patent number: 11834754
    Abstract: The present invention relates to an ALD (Atomic layer deposition) apparatus and an ALD method. The ALD apparatus is provided with a reacting chamber and an annealing chamber, in which the reacting chamber is positioned with several heaters, a substrate to be deposited with an epitaxial layer may be transferred between different heaters, and each heater may independently moderate temperature. Different heaters correspond to different ALDs, and the number of the heaters may be varied to meet required a film to be deposited or composition of a crystal material. Because the heaters may be optimized to adapt to required temperature of different reactant gases, thickness of the epitaxial layer will meet expectation, and quality of the epitaxial layer will be promoted. Meanwhile, moderating the temperature independently may raise yield of production.
    Type: Grant
    Filed: January 28, 2022
    Date of Patent: December 5, 2023
    Assignee: SiEn (QingDao) Integrated Circuits Co., Ltd.
    Inventors: Zhaosheng Meng, Zhuangzhuang Wu, Min-Hwa Chi