Abstract: Proposed are a layered Group III-V arsenic compound, a Group III-V nanosheet that may be prepared using the same, and an electrical device including the materials. There is proposed a layered compound having a composition represented by [Formula 1] Mx-mAyAsz (Where M is at least one of Group I elements, A is at least one of Group III elements, x, y, and z are positive numbers which are determined according to stoichiometric ratios to ensure charge balance when m is 0, and 0<m<x).

Abstract: This method for producing a body obtained by processing a solid carbon-containing material includes: a step of preparing the solid carbon-containing material having at least a surface composed of solid carbon; and a step of processing the solid carbon-containing material. The step of processing the solid carbon-containing material includes: a sub-step of forming non-diamond carbon by heat-treating the solid carbon in the surface of the solid carbon-containing material; and a sub-step of removing at least a part of the non-diamond carbon.

Abstract: The present disclosure provides a method for regulating an inert gas flow in a crystal pulling furnace, a method for preparing monocrystalline silicon, and monocrystalline silicon. The method for regulating an inert gas flow includes introducing the inert gas into a main furnace chamber of the crystal pulling furnace from an auxiliary furnace chamber of the crystal pulling furnace, and regulating a flow direction of the inert gas flow introduced into the auxiliary furnace chamber of the crystal pulling furnace.

Abstract: The present disclosure relates to P-type SnSe crystal capable of being used as thermoelectric refrigeration material and a preparation method thereof. The material is a Na-doped and Pb-alloyed SnSe crystal. A molar ratio of Sn, Se, Pb and Na is (1-x-y):1:y:x, where 0.015?x?0.025 and 0.05?y?0.11. The P-type SnSe crystal provided by the present disclosure is capable of being used as the thermoelectric refrigeration material. A power factor PF of the P-type SnSe crystal at a room temperature is ?70 ?Wcm?1K?2, and ZT at the room temperature is ?1.2. A single-leg temperature difference measurement platform built on the basis of the obtained SnSe crystal may realize a refrigeration temperature difference of 17.6 K at a current of 2 A. The present disclosure adopts a modified directional solidification method and uses a continuous temperature region for slow cooling to grow a crystal to obtain the large-sized high-quality SnSe crystal.

Abstract: A quartz glass crucible including bottom, curved, and straight body portions, where the quartz glass crucible includes an outer layer including opaque quartz glass containing bubbles, and an inner layer including transparent quartz glass, the outer layer fabricated from different types of raw material powder, the outer layer having regions sectioned by bubble content densities, and bubble content densities of two outer layer adjacent regions, when da (pcs/mm3) is defined as content density of a region “a” having a greater content density, and db (pcs/mm3) is defined as content density of a region “b” having a smaller content density, a difference D=(da?db)/db between content densities of the two regions is 10% or more.

Abstract: A perovskite material that has a perovskite crystal lattice having a formula of CxMyXz, where x, y, and z, are real numbers, and 1,4-diammonium butane cation cations disposed within or at a surface of the perovskite crystal lattice. C comprises one or more cations selected from the group consisting of Group 1 metals, Group 2 metals, ammonium, formamidinium, guanidinium, and ethene tetramine. M comprises one or more metals each selected from the group consisting of Be, Mg, Ca, Sr, Ba, Fe, Cd, Co, Ni, Cu, Ag, Au, Hg, Sn, Ge, Ga, Pb, In, Tl, Sb, Bi, Ti, Zn, Cd, Hg, and Zr and combinations thereof. X comprises one or more anions each selected from the group consisting of halides, sulfides, selenides, and combinations thereof.

Abstract: A boron nitride layer and a method of fabricating the same are provided. The boron nitride layer includes a boron nitride compound and has a dielectric constant of about 2.5 or less at an operating frequency of 100 kHz.

Abstract: A post-synthetic method for stabilizing colloidal crystals programmed from nucleic acid is disclosed herein. In some embodiments, the method relies on Ag+ ions to stabilize the particle-connecting nucleic acid duplexes within the crystal lattice, essentially transforming them from loosely bound structures to ones with very strong interparticle links. In some embodiments, the nucleic acid is DNA. Such crystals do not dissociate as a function of temperature like normal DNA or DNA-interconnected colloidal crystals, and they can be moved from water to organic media or the solid state, and stay intact. The Ag+-stabilization of the nucleic acid (e.g., DNA) bonds is accompanied by a nondestructive contraction of the lattice, and both the stabilization and contraction are reversible with the chemical extraction of the Ag+ ions, e.g., by AgCl precipitation with NaCl.

Abstract: Nano-wire growth processes, nano-wires, and articles having nano-wires are disclosed. The nano-wire growth process includes trapping growth-inducing particles on a substrate, positioning the substrate within a chamber, closing the chamber, applying a vacuum to the chamber, introducing a precursor gas to the chamber, and thermally decomposing the precursor gas. The thermally decomposing of the precursor gas grows nano-wires from the growth-inducing particles. The nano-wires and the articles having the nano-wires are produced by the nano-wire growth process.

Abstract: A method for making a transition metal dichalcogenide crystal having a chemical formula represented as MX2 is provided, wherein M represents a central transition metal element, and X represents a chalcogen element. The method includes providing a MX2 polycrystalline powder, a MX2 seed crystal, and a transport medium. The MX2 polycrystalline powder and the transport medium are placed in a first reaction chamber. The first reaction chamber and the MX2 seed crystal are placed in a second reaction chamber having a source end and a deposition end opposite to the source end. The first reaction chamber is placed at the source end, and the MX2 seed crystal is placed at the deposition end.

Abstract: Proposed are a layered Group III-V compound containing phosphorus, a Group III-V nanosheet that may be prepared using the same, and an electrical device including the materials. There is proposed a layered compound represented by [Formula 1] Mx-mAyPz (Where M is at least one of Group II elements, A is at least one of Group III elements, x, y, and z are positive numbers which are determined according to stoichiometric ratios to ensure charge balance when m is 0, and 0<m<x).

Abstract: A silicon carbide ingot producing method is provided. The method produces a silicon carbide ingot in which an internal space of a reactor is depressurized and heated to create a predetermined difference in temperature between upper and lower portions of the internal space. The method produces a silicon carbide ingot in which a plane of a seed crystal corresponding to the rear surface of the silicon carbide ingot is lost minimally. Additionally, the method produces a silicon carbide ingot with few defects and good crystal quality.

Abstract: The present disclosure relates to a susceptor having a generally circular body having a face with a radially inward section and a radially outward section which includes a substrate supporting surface elevated relative to the radially inward section. A sidewall surrounds the substrate supporting surface which upon retention of a substrate on the radially outward section, the sidewall surrounds the substrate. The sidewall includes a plurality of humps which protrude from the top surface of the sidewall. Advantageously, the plurality of humps may aid in even thickness of deposition of material at the edge of the substrate.

Abstract: A GaN single crystal having a gallium polar surface which is a main surface on one side and a nitrogen polar surface which is a main surface on the opposite side, wherein on the gallium polar surface is found at least one square area, an outer periphery of which is constituted by four sides of 2 mm or more in length, and, when the at least one square area is divided into a plurality of sub-areas each of which is a 100 ?m×100 ?m square, pit-free areas account for 80% or more of the plurality of sub-areas.

Abstract: The present disclosure provides a crystal growth apparatus. The crystal growth apparatus may include a furnace chamber; a temperature field device placed at least partially into the furnace chamber, wherein a cover plate of the temperature field device includes a first through hole; and a pulling rod component that passes through the first through hole and extends into the temperature field device.

Abstract: Organic-inorganic hybrid perovskite has demonstrated tremendous potential for the next generation of electronic and optoelectronic devices due to their remarkable carrier dynamics. However, current studies of electronic and optoelectronic devices have been focused on polycrystalline materials, due to the challenges in synthesizing device compatible high quality single crystalline materials. Here, we firstly report the epitaxial growth of single crystal hybrid perovskites with controlled locations, morphologies, and orientations, using combined strategies of lithography, homoepitaxy, and low temperature solution method. The crystals grow following a layer-by-layer model under controlled growth parameters. The process is robust and can be readily scaled up. The as-grown epitaxial single crystals were integrated in an array of light emitting diodes, each crystal as a pixel with enhanced quantum efficiencies.

Abstract: The present disclosure provides a crystal growth apparatus. The crystal growth apparatus may include a furnace chamber; a temperature field device placed at least partially into the furnace chamber; a pulling rod component that extends into the temperature field device; and a weighting component configured to determine a weight of a crystal being grown on the pulling rod component.

Abstract: The present disclosure provides a crystal growth apparatus. The crystal growth apparatus may include a furnace chamber; a temperature field device placed at least partially into the furnace chamber; a pulling rod component that extends into the temperature field device; a pulling component configured to drive the pulling rod component to move up and down; and a rotating component configured to drive the pulling rod component to rotate.

Abstract: The present disclosure provides a crystal growth apparatus. The crystal growth apparatus may include a furnace chamber; a temperature field device placed at least partially into the furnace chamber; a pulling rod component that extends into the temperature field device; and a pulling component configured to drive the pulling rod component to move up and down. The pulling component may include a driving device, a pillar, a slide, and a screw rod. The driving device is mounted on a top of the pillar; the pillar includes slide rail; the screw rod is mounted in parallel with the slide rail and one end of the screw rod is connected to the driving device; the slide is nested on the screw rod, at least a part of the slide is located within the slide rail, and a rotation of the screw rod drives the slide to move up and down.

Abstract: A composite has a solid-state structure, silicate, lithium ions, and at least one paramagnetic or diamagnetic element, which is different from lithium silicon, and oxygen. The solid-state structure has two areas in which the solid-state structure forms an identical crystal orientation. The areas are arranged at a distance of at least one millimeter from each other. A method has a quenching step in which a solid-state structure of a composite is produced, which differs from an ambient temperature solid-state structure. The composite produced by the method has silicate, lithium ions, and an element that is different from lithium, silicon, and oxygen. The method produces at least one gram of the phase pure composite in the quenching step.