Abstract: A plasma reactor for physical vapor deposition (PVD), also known as sputtering, which is adapted so that the atomic species sputtered from the target can self-sustain the plasma without the need of a working gas such as argon. The method is particularly useful for sputtering copper. According to the invention, a bias ring arranged around the wafer and rising somewhat above it is positively electrically biased to control the plasma potential, and hence to control the energy and directionality of the ions being sputter deposited on the wafer. The bias ring may be a separate biasing element which can be positioned at a selected height above the wafer.

Abstract: A method of manufacturing an object in a vacuum treatment apparatus having a vacuum recipient for containing an atmosphere, includes the steps of supporting a substrate on a work piece carrier arrangement in the recipient and treating the substrate to manufacture the object in the vacuum recipient. The treating process includes generating electrical charge carriers in the atmosphere and in the recipient which are of the type that form electrically insulating material and providing at least two electroconductive surfaces in the recipient. Power, such as a DC signal, is supplied to at least one of the electroconductive surfaces so that at least one of the electroconductive surfaces receives the electrically insulating material for covering at least part of that electroconductive surface. This causes electrical isolation of that electroconductive surface which leads to arcing and damage to the object.

Abstract: A magnetron sputtering electrode for use within a magnetron sputtering device having more uniform cooling of the target with the use of a water chamber including water diverters to establish a turbulent water flow within the water chamber. The electrode also includes a direct power coupling to the cathode body to avoid degradation of the power supplied to the electrode. The electrode further includes introduction of process gas in an interstitial space between the anode shield and the cathode shield. The electrode also includes the use of removable shaped magnets providing improved target utilization and run times and a choice of erosion pattern and balanced or unbalanced sputtering by simple magnet substitution. In one embodiment, the invention includes the use of a threaded anode shield and a threaded cathode shield which significantly reduces the overall electrode size for a given target diameter.

Abstract: A process for increasing the sheet resistance and lowering the temperature coefficient of resistance of a thin film resistor deposited on a wafer, the process comprising ramping the temperature of the wafer to an annealing temperature above the decomposition temperature of the thin film resistor using a radiant heat source such that the wafer reaches the annealing temperature within a ramp up time of from about 5 to 10 seconds, and annealing the wafer at the annealing temperature for an annealing period of from about 50 to 85 seconds.

Abstract: In the method of fabricating a CRT including a sputtering method for forming an anti-static layer and a spin-coating or spray-coating method for forming an anti-reflection layer on a CRT panel, a method of fabricating a low-resistance, anti-reflection CRT is characterized by applying a silicon oxide (SiO2) coating between the anti-static layer and the anti-reflection layer by a sputtering method. As a result, the CRT has enhanced strength of layers and a low surface resistance. Also, the screen is provided with a charge protection function in the surface, with reflectivity of an external light being mitigated. As a result, it is possible to enhance the contrast characteristics of the screen, to avoid leaving fingerprints on the screen, and also to eliminate unpleasant feeling of static electricity.

Abstract: A mark shielding ring for use in a physical vapor deposition chamber and a method for using such ring are disclosed. The mark shielding ring may be suitably used for shielding alignment marks or any other marks provided on the top surface of a wafer along a peripheral region. The novel mark shielding ring includes an alignment means for mechanically joining a shielding ring to a wafer pedestal on which the ring is positioned. Any up-and-down motion of the wafer pedestal therefore does not change the alignment between the shielding ring and the pedestal and therefore the function of the shielding ring for protecting an alignment mark can be insured.

Abstract: The invention is embodied in an inductively coupled RF plasma reactor including a reactor chamber enclosure defining a plasma reactor chamber and a support for holding a workpiece inside the chamber, a non-planar inductive antenna adjacent the reactor chamber enclosure, the non-planar inductive antenna including inductive elements spatially distributed in a non-planar manner relative to a plane of the workpiece to compensate for a null in an RF inductive pattern of the antenna, and a plasma source RF power supply coupled to the non-planar inductive antenna. The planar inductive antenna may be symmetrical or non-symmetrical, although it preferably includes a solenoid winding such as a vertical stack of conductive windings. In a preferred embodiment, the windings are at a minimum radial distance from the axis of symmetry while in an alternative embodiment the windings are at a radial distance from the axis of symmetry which is a substantial fraction of a radius of the chamber.

Abstract: A magnetron sputtering apparatus for forming a thin metal film on one of the major surfaces of a light-transmitting disc-shaped substrate as a disc substrate for an optical disc as mutually intersecting magnetic fields are applied by a magnetic field application unit provided at back of a target. The apparatus includes a center mask tightly contacted with the outer peripheral portion of one major surface of the disc substrate on which the thin film is formed for masking the center portion of the substrate and an outer peripheral mask tightly contacted with the outer peripheral portion of the one major surface of the disc substrate on which the thin film is formed for masking the outer peripheral portion. The outer peripheral mask is separated from and independent of the center mask.

Abstract: A process and apparatus for coating small particles and fibers. The process involves agitation by vibrating or tumbling the particles or fibers to promote coating uniformly, removing adsorbed gases and static charges from the particles or fibers by an initial plasma cleaning, and coating the particles or fibers with one or more coatings, a first coating being an adhesion coating, and with subsequent coatings being deposited in-situ to prevent contamination at layer interfaces. The first coating is of an adhesion forming element (i.e. W, Zr, Re, Cr, Ti) of a 100-10,000 .ANG. thickness and the second coating or final coating of a multiple (0.1-10 microns) being Cu or Ag, for example for brazing processes, or other desired materials that defines the new surface related properties of the particles. An essential feature of the coating process is the capability to deposit in-situ without interruption to prevent the formation of a contaminated interface that could adversely affect the coating adhesion.

Abstract: A vacuum treatment apparatus (FIG. 13) includes a vacuum recipient or chamber (3) for containing an atmosphere. A mechanism (50,52) for generating electrical charge carriers in the atmosphere is provided in the recipient, the electrical charge carriers being of the type that form electrically isolating material. The recipient also contains a work piece carrier arrangement (1) and at least two electroconductive surfaces (2a, 2b) which are mutually electrically isolated from each other. A DC power supply (8) is operationally connected to the electroconductive surfaces by respective electrical conductors with an inductor (L.sub.66) in one of the conductors. A parallel switching arrangement is connected between the electrical conductors to control a current path between the conductors.

Abstract: The invention provides a device containing a low .kappa., hydrogen-free a-C:F layer with good adhesion and thermal stability. It was found that the combination of desirable properties was attainable by a relatively easy process, as compared to processes that utilize gaseous sources, such as CVD. Specifically, the a-C:F layer is formed by sputter deposition, using only solid sources for the fluorine and carbon, and in the absence of any intentionally-added hydrogen-containing source. The sputtering is performed such that the layer contains 20 to 60 at. % fluorine, and also, advantageously, such that the a-C:F exhibits a bandgap of about 2.0 eV or greater. The a-C:F layer formed by the process of the invention exhibits a dielectric constant, at 1 MHz and room temperature, of 3.0 or less, advantageously 2.5 or less, along with being thermally stable up to at least 350.degree. C., advantageously 450.degree. C., and exhibiting a stress of about 100 MPa or less, in absolute value.

Abstract: The invention relates to apparatus for use in the coating of surfaces of substrates by Physical Vapor Deposition systems (PVD) wherein the deposition in material is applied onto the said surfaces by the sputtering of the same using the PVD system. The invention provides means for preventing sputtering material from applying or landing onto surfaces other than which is desired to be coated in the said coating process. The masking means allow the prevention and/or removal of such material which is known as backscattered material and the invention described claims protection for several embodiments and methods of achieving this thereby improving subsequent adhesion propertied and optical quantities, if applicable, of the coating.

Abstract: A flexible, modular thin film deposition machine comprises a number of batch process stations which define a batch process path. At least one of the batch process stations is a thin film deposition station including a serial deposition chamber and an inter-chamber disk transfer mechanism. The disks move in batches along the process path, being individually processed only at the deposition station. Within the serial sputtering chambers of at least one deposition station there is at most partial environmental separation, whereas between different deposition stations the separation is complete. The resulting simplification of the transport mechanism provides for a high throughput rate while simultaneously minimizing contamination of individual thin film layers.

Abstract: A method and an apparatus for forming a layer on a substrate are disclosed. In accordance with one embodiment, a substrate (901) is placed into a chamber (30) that includes a coil (16) and a shield (14) wherein the coil and the shield are electrically isolated by an isolation/support member (32) having a first surface (321) that is substantially contiguous with a surface of the coil and having a second surface (322) that is substantially contiguous with a surface of the shield. A layer (1002, 1102) is then deposited onto the substrate (901).

Abstract: A clean transfer method and an apparatus therefor capable of receiving, storing and transferring a transferred object by means of a vacuum clean box while eliminating arrangement of any vacuum evacuation means and transfer means in the vacuum clean box, as well as facilitating connection of the vacuum clean box to various processing units. The vacuum clean box is free of any vacuum evacuation means and transfer means and is provided with a first opening selectively closed with a first shutter and kept airtight when the first opening is closed with the first shutter. The vacuum clean box is airtightly connected to a sputter unit which is provided with a second opening selectively closed with a second shutter, when the first and second openings are closed with the first and second shutters, respectively, resulting in forming a closed space therebetween through which the first and second shutters are opposite to each other.

Abstract: A method of depositing aluminum or other metals so that vias are more completely filled is disclosed. The wafer or substrate is preheated to a temperature of approximately 200.degree. C. Then the wafer is placed in an ambient of approximately 350.degree. C. while metal deposition commences. The resulting metal layer has a gradually increasing grain size and exhibits improved via filling. Also disclosed is a method and apparatus (involving cooling of support structures) for deposition of an antireflective coating to prevent rainbowing or spiking of the coating into the underlying metal.

Abstract: An external inductive coil is used in a plasma process system having a dielectric shield which separates the coil from the plasma. The shield includes channels provided along the inner side of the shield facing the plasma region. The channels inhibit the formation of a continuous metal film over the inner surface of the shield during sputtering and deposition. The sidewalls defining the channels permit RF transmission after the surfaces directly facing the plasma are coated with metal.

Abstract: A vacuum sputtering apparatus (1) is described in which a target (7) having a target face (8) is mounted in a vacuum chamber (2) opposite a substrate (15). A magnetic pole plate (16) having a non-magnetic carrier plate (17) attached thereto is mounted behind the target (7) on a shaft (28) and can be rotated by means of a motor (29) about an axis substantially orthogonal to the target face (8). Carrier plate (17) has an array of holes (19) each of which can receive a corresponding first bar magnet (20, 21). There are fewer magnets (20, 21) than there are holes (19) and the magnets (20, 21) are removable from their holes (19). Carrier plate (17) also has a circumferential line of holes (22), in each of which may be mounted a corresponding second bar magnet (23). By varying the number and positions of the bar magnets (20, 21, 23) in the holes (19, 22) a variety of different high density plasma zone shapes (24; 25, 26; 27; 28) can be produced upon the target face (8).

Abstract: A coating station has a flat sputter source opposite a workpiece receiving arrangement is configured as a planet arrangement. The rotating axes (A.sub.P) of the planets intersect one another on a rotating axis (A.sub.S) of the sun system on the side facing away from the sputter source. As a result, substrates, particularly optical lenses, can be coated in extremely small batches according to given formulas in an advantageously flexible manner.

Abstract: A magnetron sputtering target is formed with a plurality of radially extending circumferential grooves to reduce particle contamination during sputtering. The grooves attract redeposited sputter material which is quickly resputtered during the early stages of fine particle nucleation.