Abstract: A silicon coating on an air bearing surface for magnetic thin film heads. A thick silicon layer is provided to replace metallic layers such as TiW as an overcoat for thin film heads. The silicon layer will provide a durable head-disk interface and act as a reflective surface for fly height measurement. The silicon layer can be planarized with the pole tips to avoid any magnetic spacing loss. The thickness of the silicon coating is preferably between 125 and 6500 Angstroms thick. The slider body may be fabricated from silicon such that the silicon coating is substantially identical to the silicon slider body, thereby preventing thermal mismatch therebetween. The silicon coating is preferably applied using a magnetron sputtering technique which provides a high rate of deposition of silicon to form a dense, low stress silicon layer.

Abstract: A substrate is processed in a device having a vacuum chamber, at least one sputtering chamber, and a flow channel connecting the vacuum chamber to the sputtering chamber. According to the method, material is sputtered onto the substrate located in the sputtering chamber so that a sputtering gas flux amount is consumed by deposition onto the substrate. Prior to and during sputtering, sputtering gas flux flows into the vacuum chamber so that the total amount of sputtering gas flux flowed into the vacuum chamber prior to sputtering is substantially equal to the sputtering gas flux amount. At least during sputtering, the vacuum chamber is maintained at a partial pressure in a range of from more than 1.times.10.sup.-5 mbar up to 5.times.10.sup.-3 mbar.

Abstract: A sputtering method comprises applying a negative voltage intermittently in a constant periodic cycle to a cathode disposed in a vacuum chamber, wherein the negative voltage is intermittently applied so that a time during which the negative voltage is not applied includes a time during which the voltage is controlled to be zero volt in a range of from 10 .mu.s to 10 ms, and the zero voltage time is equal to or longer than the time required by one arcing from its generation to extinction.

Abstract: A magnetron cathode and sputtering system in which the cathode assembly includes a diaphragm arrangement with one or more diaphragms which overlie at least the edge of the cathode at the dark side region of the gas discharge so that plasmas cannot form between the diaphragm and target. An improved sputtering is thereby obtained in a high pressure mode of operation.

Abstract: A method of producing a low resistance contact in an opening carried in a substrate is comprised of the steps of forming a first layer of conductive material along a portion of the walls of the opening. A portion of the conductive material is resputtered from the walls of the opening to form a thin layer at the bottom of the opening. A second layer of conductive material is deposited on the substrate in a manner to fill the opening. A contact thus formed is also disclosed.

Abstract: A piezoelectric thin-film device includes: a substrate; and a piezoelectric thin film formed on the substrate, wherein a thickness of the piezoelectric thin film is 1 to 10 .mu.m, a crystal grain size of the piezoelectric thin film is 0.05 to 1 .mu.m, and a surface roughness (Rmax) of the piezoelectric thin film is no more than 1 .mu.m.

Abstract: The present invention provides a vacuum chamber that reduces the amount of time required to draw a vacuum after replacing consumables or performing routine maintenance by preserving the vacuum in a portion of the chamber. More particularly, the chamber isolates a frequently replaced consumable or component in a first portion of the chamber so that only the first portion of the chamber is exposed to the surrounding environment and the volume of gas or air that must be re-evacuated is reduced. A gate valve is provided to form a seal with a valve seat that is either formed into the chamber wall or provided by a valve body. Once the second portion is sealed, a lid to the first portion may be opened for access.

Abstract: A process for providing a thin encapsulation layer for thin film heads includes controlling the bias voltage of the substrate and head during the encapsulation layer deposition process. The bias voltage is first maintained at approximately 60 volts while the standard encapsulation overcoat portion of the layer is deposited. This may take approximately one hour. Over the next thirty minutes, the bias voltage is ramped from approximately 60 volts to approximately 200 volts in a gradual, linear manner to reduce the stress on the wafer and heads. The bias voltage is then maintained at approximately 200 volts for the next three hours while the remainder of the encapsulation layer is deposited. Because of the higher bias voltage, the layer is deposited in a substantially planar manner so that there is no need for a lapping back process. Stress to the head is minimized by ramping the bias voltage. In addition, relatively short studs can be used for routing signals to and from the read/write elements of the head.

Abstract: A target and a wafer are opposed to each other in a processing vessel in the form of a quartz tube whose internal pressure can be reduced. A low bias voltage is applied to the wafer while Helicon wave plasma of high density is generated between the target and the wafer by an antenna disposed on the circumference of the processing vessel. The wafer is positioned near and outside a lower boundary of a region of the plasma. Deposition seeds from the target are ionized in the plasma region and accelerated vertically to be incident on the wafer and are deposited first on the bottoms of the grooves in a surface of the wafer. In burying deposition seeds in grooves and holes of high aspect ratios which are formed in the surface of the wafer, the deposition seeds can be deposited first on the bottoms without occurrence of voids.

Abstract: A cross flow system for metalizing compact discs, capable of being interposed in-line in the production of the compact discs after premastering, mastering, electro-forming, and molding includes a vacuum chamber having diametrically opposed vacuum locks and multiple metalization sources in the form of magnetrons, with a preferred cross flow including the introduction of a disc to be metalized through one lock and the exit of the metalized disc through the diametrically opposite lock. The double vacuum lock diametrically opposed cross flow system eliminates the problems of throughput limitations, high rate deposition, substrate pitting, and software complexity due to indexing which makes prior systems both costly and inefficient. The system also permits processing of more than one substrate or compact disc title such that multiple titled compact discs can be processed simultaneously.

Abstract: An improved sputtering process increases the perpendicularity of the sputtered flux to the target surface by bombarding the target with both low and high mass ions, with low mass ions predominating, packing the target with both low and high mass implanted ions, and causing target atoms ejected as a result of high mass incident ions to have a higher probability of perpendicular or near perpendicular ejection. An alternative improved sputtering process bombards the target with both low and high mass ions, with high mass ions predominating, resulting in a higher sputter rate than achievable with either the high or low mass species alone. Including in either process as the high or the low mass species a species having a lower ionization energy than a standard species allows a reduced pressure plasma, resulting in less scattering of the sputtered flux. A low ionization energy species may also be employed to assist in striking a plasma before sputtering by a single species during deposition.

Abstract: The present invention relates to a method of fabricating a magnetoresistive head formed by laminating a magnetic layer and a nonmagnetic metal layer including a silver film and used for converting change in magnetic field into change of resistivity of the device. A method of fabricating a magnetoresistive head upon laminating on a substrate a plurality of magnetic layers arranged to put nonmagnetic metal layer therebetween and a bias magnetic layer formed adjacent to one of the magnetic layers to give a magnetization of the specified direction to the magnetic layer, comprising the steps of setting film thicknesses of the nonmagnetic metal layers to be formed, and forming the nonmagnetic metal layers under a condition where temperature of the substrate is held within a temperature range less than an upper limit of a film forming temperature not to cause pin holes in the nonmagnetic metal layer.

Abstract: In accordance with a first aspect of the invention, a plasma reactor having a chamber for containing a plasma and a passageway communicating with the chamber is enhanced with a first removable plasma confinement magnet module placed adjacent the passageway including a first module housing and a first plasma confinement magnet inside the housing. It may further include a second removable plasma confinement magnet module placed adjacent the passageway including a second module housing, and a second plasma confinement magnet. Preferably, the first and second modules are located on opposite sides of the passageway. Moreover, the first and second plasma confinement magnets have magnetic orientations which tend to oppose plasma transport or leakage through the passageway. Preferably, the module housing includes a relatively non-magnetic thermal conductor such as aluminum and is in thermal contact with said chamber body.

Abstract: An etching apparatus comprises a first tank for containing an etchant, a second tank for containing a non-etchant, a partition positioned between the first tank and the second tank and consisting of a plurality of partition planes, and holders for holding a plurality of substrates against the partition. One or more openings are formed in each partition plane of the partition, and the substrates are held against the partition so that the openings formed in the partition planes are closed by the substrates. Each substrate is larger than the associated opening in size and has a top surface and an etching surface on the bottom. Each of the holders holds one of the substrates so that the etching surface of the substrate is exposed to the etchant contained in the first tank through the opening without touching the non-etchant and that the top surface of the substrate is exposed to the non-etchant contained in the second tank without touching the etchant.

Abstract: A method, apparatus and carrier for coating a CRT screen after assembly. The method and apparatus includes isolating a surface portion of the CRT to be coated from the remaining surface to prevent or minimize coating problems resulting from outgassing or difficulty in controlling coating process parameters and to isolate noncompatible components from the deposition environment.

Abstract: A target arrangement for a sputtering apparatus has a circular plate target with either a circumferential protrusion or recess which is symmetrical about a central plane through the target, the plane being perpendicular to the central axis of the target and located halfway between the top and bottom surfaces of the target. Each surface of the target is composed primarily of sputtering material. A magnetron for use with the target arrangement for easy changing of the target to sputter using the opposite surface of the target is disclosed. A process for using the target arrangement and magnetron assembly to sputter a work piece is also disclosed.

Abstract: A method for depositing carbon films on membranes used in masks for X-ray or corpuscular projection, e.g. electron or ion beam, lithography is proposed in which sputtering is used and the membranes serving as sputter substrates are positioned in the off-axis configuration relative to the sputter targets. The carbon films thus produced have a compressive stress of the order of 10 MPa or below. For modifying the properties of carbon films after deposition, e.g. the deactivation of chemically reactive sites or stabilization of stress, ion bombardment with helium ions can be employed. This method anticipates changes in the film due to initial irradiation and serves to reach a plateau in which the stress varies only a little, i.e. within about 1 MPa or less.

Abstract: Method is described of reducing particle contamination during sputtering and sputtering device for the implementation of such a method.A method of providing a layer on a substrate (1), whereby, during a certain process time, material (8) is detached from a target plate (6) through a bombardment of this target plate with ions from a gas discharge (4) under reduced pressure in a reactor chamber (2) which is provided with a support (7) for the substrate (1). Measures are taken to ensure that material deposited on a surface of chamber component (9) near the support (7) has a better adhesion. According to the invention, the measure for achieving a better adhesion of the material consists in that the surface of the chamber component (9) is first bombarded with ions from the gas discharge (4) for at least part of the process time.

Abstract: An improved sputter target and shield eliminate redeposition of sputtered material onto the target and prevents the formation of deposits on the electrically insulative member between the target and enclosure wall. The sputter target is designed to allow the plasma to sputter the entire sidewall of the target while the a narrow passage between the target, backing plate and shield protects the insulative member from line-of-sight deposition, prevents formation of a plasma within the passage without causing arcing between the backing plate and shield. The target of the present invention is generally disk-shaped with a sloped or frustoconical sidewall surface around the perimeter edge.

Abstract: The present invention relates to a sensor for detecting hydrocarbon type gas such as methane gas and propane gas, and process for manufacturing thereof. SiO.sub.2 was deposited in 1 .mu.m by ion beam sputtering with a mixed gas (3:2) of argon and oxygen on a silicon wafer in the process. In case of a propane sensor, platinum electrode is deposited in 600 .ANG. by ion beam sputtering on a tin oxide thin film synthesized by ionized beam of which the oxygen ion energy is 0 to 500 eV by using poly alumina. In case of a methane sensor, heat treatment at 500.degree. C. was performed for 1 hour in the air in order for the thin film to be stable at high operation temperature, while heat treatment was not performed in case of propane sensor. The sensor was manufactured by adding platinum or palladium thereto by argon ion beam sputtering. The thin film type tin oxide sensor according to the present invention exhibited an excellent selectivity of 47.4% even at low temperature of 150.degree. C.