Abstract: The present invention discloses a photoresist polymer of following formula 1, and a photoresist composition comprising the same: where AC1, AC2, x and y are those defined herein. The photoresist composition has excellent transparency in deep ultraviolet region, etching resistance and heat resistance, and can form a good pattern without a developing step. Accordingly, the photoresist composition can be applied to a high density minute pattern below 0.15 &mgr;m (e.g., for fabrication of DRAM over 1G), and efficiently employed for the lithography process using ArF, KrF, VUV, EUV, E-beam and X-ray.

Abstract: A chemically amplified (CA) photoresist system wherein a terpolymer containing ketal/phenolic/silicon based sidechains is provided. Among other things, the terpolymers provide for improved bake technologies. In another aspect a process for lithographic treatment of a substrate by means of ketal/phenolic/silicon based compositions and corresponding processes for the production of an object, particularly an electronic component are provided.

Abstract: An ester compound of the following formula (1) is provided. R1 is H, methyl or CH2CO2R3, R2 is H, methyl or CO2R3, R3 is C1-C15 alkyl, Z is a divalent C2-C20 hydrocarbon group which forms a single ring or bridged ring with the carbon atom, m is 0 or 1, n is 0, 1, 2 or 3, and 2m+n=2 or 3. A resist composition comprising as the base resin a polymer resulting from the ester compound is sensitive to high-energy radiation, has excellent sensitivity and resolution, and is suited for micropatterning using electron beams or deep-UV.

Abstract: A novel chemical amplification resist composition which comprises an alkali-soluble base resin, a photoacid generator and a dissolution inhibitor and in which a cyclic or acyclic structure constituting a matrix portion of the molecule of said dissolution inhibitor contains at least one lone pair-containing portion which can provide a hydrogen bond sufficient to shift and gather an alkali-soluble moiety of said base resin to and on a side of said molecule of the dissolution inhibitor compound. The resist composition can exhibit both excellent sensitivity and resolution and accordingly can be utilized in the formation of very fine resist patterns in a lithographic process. A method for forming such resist patterns is also disclosed.

Abstract: The present invention includes an imageable element, comprising a substrate and a thermally imageable composition which includes a graft copolymer having hydrophobic and hydrophilic segments. Upon imagewise exposure to thermal energy, the graft copolymer produces exposed regions that are less soluble in a developer than the unexposed regions. Also included is a method of producing an imaged element which includes a graft copolymer according to the present invention.

Abstract: The present invention relates to a reactive photo acid-generating agent and a heat-resistant photoresist composition comprising the same. In particularly, the present invention relates to the heat-resistant photoresist composition comprising the photo acid-generating agent expressed by the following formula (1), which can increase the degree of polymerization, and polyamide oligomers having acetal or its cyclized derivatives, which have an ability of that light-exposed area is dissolved in the developer and light-unexposed area is convertible to a heat-resistant polymer in the latter heating process and thus, it can be used for passivation layer, buffer coat or layer-insulating film of the multilayer printed circuit board, wherein and R are the same as defined in the detailed description of the Invention.

Abstract: An acrylate resin containing fluorinated alkyl groups in ester side chains has high transmittance to VUV radiation. A resist composition using the resin as a base polymer is sensitive to high-energy radiation, has excellent sensitivity and resolution, and is suited for lithographic microprocessing.

Abstract: An organic anti-reflective polymer having the following Formula 1, its preparation method, an anti-reflective coating composition comprising the said organic anti-reflective polymer and a preparation method of an anti-reflective coating made therefrom. The anti-reflective coating comprising the polymer eliminates standing waves caused by the optical properties of lower layers on the wafer and by the thickness changes of the photoresist, prevents back reflection and CD alteration caused by the diffracted and reflected light from such lower layers. Such advantages enable the formation of stable ultrafine patterns suitable for 64M, 256M, 1G, 4G, and 16G DRAM semiconductor devices and improve the production yields. Another advantage is the ability to control the k value.

Abstract: A resist pattern, containing a material capable of generating an acid by exposure to light, is covered with a resist containing a material capable of crosslinkage in the presence of an acid. The acid is generated in the resist pattern by application of heat or by exposure to light, and a crosslinked layer is formed at the interface as a cover layer for the resist pattern, thereby causing the resist pattern to be thickened. Thus, the hole diameter of the resist pattern can be reduced, or the isolation width of a resist pattern can be reduced.

Abstract: Compounds of the formula I R1 and R2 independently of one another are C1-C20alkyl, OR11, CF3 or halogen; R3, R4 and R5 independently of one another are hydrogen, C1-C20alkyl, OR11 or halogen; R6, R7, R8, R9 and R10 independently of one another are hydrogen, C1-C20alkyl; C2-C20alkyl which is interrupted once or more than once by nonconsecutive O atoms and which is unsubstituted or substituted by OH and/or SH; or R6, R7, R8, R9 and R10 are OR11, SR11, N(R12)(R13), phenyl or halogen; R11 is C1-C20alkyl, C3-C8cycloalkyl, phenyl, benzyl or C2-C20alkyl which is interrupted once or more than once by O or S and which is unsubstituted or substituted by OH and/or SH; R12 and R13 independently of one another are hydrogen, C114 C20alkyl, C3-C8cycloalkyl, phenyl, benzyl or C2-C20alkyl which is interrupted once or more than once by nonconsecutive O atoms and which is unsubstituted or substituted by OH and/or SH; or R12 and R13 together are C3-C5alkylene which can be interrupted by O, S or NR14; R14 is hyd

Abstract: An imaging member, such as a negative-working printing plate or on-press cylinder, can be prepared with a hydrophilic imaging layer comprised of a heat-sensitive hydrophilic charged polymer (ionomer) and an infrared radiation sensitive negatively-charged oxonol dye that has a &lgr;max of greater than 700 nm. The heat-sensitive polymer and IR dye can be formulated in water or water-miscible solvents to provide highly thermal sensitive imaging compositions. In the imaging member, the polymer reacts to provide increased hydrophobicity in areas exposed to energy that provides or generates heat. For example, heat can be supplied by laser irradiation in the IR region of the electromagnetic spectrum. The heat-sensitive polymer is considered “switchable” in response to heat, and provides a lithographic image without conventional alkaline processing.

Abstract: A chemical amplification type positive resist composition excellent in balance of properties such as resolution, profile, sensitivity, dry etching resistance, adhesion and the like which comprises a resin which has the following polymeric units (A), (B) and (C); and an acid generating agent.

Abstract: The invention relates to a pigment dispersion which contains at least one polymer containing polyvinyl alcohol, polyvinyl ether an/or polyvinyl acetal units and at least one polymer based on acrylate, wherein the weight ratio is generally 1:10 to 10:1, preferably 4:1 to 1:4. This dispersion is used in positive- or negative-working and reversible photosensitive mixtures for the preparation of recording materials.

Abstract: A chemically-amplified, negative-acting, radiation-sensitive photoresist composition that is developable in an alkaline medium, the photoresist comprising: a) a phenolic film-forming polymeric binder resin having ring bonded hydroxyl groups; b) a photoacid generator that forms an acid upon exposure to radiation, in an amount sufficient to initiate crosslinking of the film-forming binder resin; c) a crosslinking agent that forms a carbonium ion upon exposure to the acid from step b) generated by exposure to radiation, and which comprises an etherified aminoplast polymer or oligomer; d) a second crosslinking agent that forms a carbonium ion upon exposure to the acid from step b) generated by exposure to radiation, and which comprises either 1) a hydroxy substituted- or 2) a hydroxy C1-C4 alkyl substituted-C1-C12 alkyl phenol, wherein the total amount of the crosslinking agents from steps c) and d) is an effective crosslinking amount; and e) a photoresist solvent, and a process for producing a microelectro

Abstract: According to the present invention there is provided a heat-sensitive material for making lithographic plates comprising in the order given on a support an IR-sensitive oleophilic layer and an ablatable cross-linked hydrophilic layer comprising an inorganic pigment and a hardener, characterized in that the ratio of said inorganic pigment over the hardener is comprised between 95/5 and 75/25 by weight.

Abstract: To provide a photosensitive paste that permits pattern formation with a high aspect ratio and a high accuracy and to provide a plasma display comprising said photosensitive paste, by using a photosensitive paste that comprises, as essential components, an inorganic particles and an organic component that contains a photosensitive compound with the difference between the average refractive index of the organic component and the average refractive index of the inorganic particles being 0.1 or less.

Abstract: Disclosed are a composition for a resist underlayer film excellent in reproducibility of a resist pattern, excellent in adhesion to a resist, excellent in resistance to a developing solution used after exposure of the resist and decreased in film loss in oxygen ashing of the resist; and a method for producing the same, the composition comprising: both or either of a hydrolysate and a condensate of (A) at least one compound selected from the group consisting of (A-1) a compound represented by the following general formula (1): R1aSi(OR2)4−a  (1) wherein R1 represents a hydrogen atom, a fluorine atom or a univalent organic group, R2 represents a univalent organic group, and a represents an integer of 0 to 2, and (A-2) a compound represented by the following general formula (2): R3b(R4O)3−bSi—(R7)d—Si(OR5)3−cR6c  (2) wherein R3, R4, R5 and R6, which may be the same or different, each represent univalent organic groups, b and c, which may be the same or diffe

Abstract: In the pattern formation method of this invention, a resist film is formed by applying, on a substrate, a pattern formation material containing a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator, wherein R1 and R2 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a chlorine atom; and R3 is a protecting group released by an acid. Then, the resist film is irradiated with exposing light of a wavelength of a 1 nm through 30 nm band or a 110 nm through 180 nm band for pattern exposure, and a resist pattern is formed by developing the resist film after the pattern exposure.

Abstract: New polymers and anti-reflective compositions including those polymers are provided. The polymer comprises recurring monomers according to the formula wherein each R is —OH, —CH2OH, —O—R1—O—X, or —CH2—O—R1—O—X, each R1 is a branched or unbranched alkyl group, and each X is shown below. The inventive compositions can be used to form anti-reflective coatings having high etch rate and optical densities.

Abstract: The present invention provides a novel ammonium salt of an organic acid. When the salt is used as a base additive for a chemically amplified resist, the environmental stability of the resist can be enhanced, and the T-top phenomenon can be effectively prevented. In addition, the line width change caused by acid diffusion can be prevented, and the E0 value of the resist can be decreased.