Abstract: A negative working chemical amplification type resist composition, which is capable of giving more improved resolution; and comprises an alkali-soluble resin, a cross-linking agent, a N-substituted succinimide compound represented by the following formula (I): wherein R represents an unsubstituted or substituted alkyl, an alicyclic hydrocarbon residue, an aryl or a camphor group, and an acid generator other than the above N-substituted succinimide compound is provided.

Abstract: According to the present invention there is provided a heat mode imaging element for providing a lithographic printing plate consisting of a lithographic base with a hydrophilic surface and a top layer that is sensitive to IR-radiation, comprises a polymer soluble in an aqueous alkaline solution, and is unpenetrable for an aqueous alkaline developer, characterized in that said top layer comprises a polysiloxane surfactant.

Abstract: Photoresist compositions and methods are provided for preparing photoresist films that are stable and impermeable to a broad range of organic solvents. Photoresist films provided herein may be photopatterned by selectively applying light, and may be stripped from a surface using unreactive agents. Photopatterned films may be used, for example, to selectively direct organic reagents to a solid support for the purpose of performing regionally selective solid-phase chemical synthesis with micron-scale resolution.

Abstract: A negative-type recording material recordable by the irradiation of an infrared ray is provided. The recording material includes (A) an infrared absorbent, (B) an onium salt, (C) a radical polymerizing compound, and (D) a binder polymer. The infrared absorbent (A) includes at least one cyanine dye having a partial structure represented by following formula (I): wherein X1 represents a halogen atom or X2—L1 (wherein X2 represents an oxygen atom or a sulfur atom and L1 represents a hydrocarbon group having from 1 to 12 carbon atoms; and R1 and R2 each independently represents a hydrocarbon group having from 1 to 12 carbon atoms, and R1 and R2 may bind together to form a ring structure). Also provided is a negative-type lithographic printing plate precursor including a support having formed thereon a photosensitive layer containing (A) an infrared absorbent, (B) an onium salt, (C) a radical polymerizing compound, and (D) a binder polymer.

Abstract: A stabilizer for thermally stabilizing an organic borate salt represented by formula (1) is disclosed, comprising a compound having one or two nitrogen-containing 5- or 6-membered heterocyclic ring having a double bond within the ring, a compound having a primary, secondary or tertiary amino group, or a compound having a thiol group. Also disclosed are a photosensitive composition comprising the stabilizer, an organic borate salt and if desired, a sensitizing dye or further a bisimidazole compound; a polymerizable composition comprising the photosensitive composition having added thereto at least one monomer having one or more ethylenically unsaturated bond and if desired, a high molecular polymer or further a pigment; and a colored pattern formed by using the polymerizable composition.

Abstract: There is provided a color filter comprising: a transparent substrate; a colored layer provided on the transparent substrate; and a protective layer provided so as to cover the colored layer, the protective layer having been formed by coating a photosensitive resin composition, exposing the coating, developing the exposed coating with an alkali, and heating the developed coating, the photosensitive resin composition comprising: a copolymer resin; a bifunctional or higher polyfunctional photopolymerizable acrylate monomer; an epoxy resin; and an initiator, said copolymer resin comprising 5 to 55% by mole of constituent units represented by formula (1) and 5 to 95% by mole of constituent units represented by formula (2), the constituent units represented by formula (1) having been partially reacted, through carboxyl groups thereof, with a (meth)acryloylalkyl isocyanate compound, the constituent units represented by formula (2) having been partially reacted, through hydroxyl groups thereof, with a (meth)acryloyla

Abstract: A photopolymerization initiator comprising an iodonium salt compound; and a photocurable composition containing the compound. The composition is a photocurable cationic composition which cures in a short time upon irradiation with actinic energy rays.

Abstract: The present invention is for a method of fabricating a high aspect ratio, freestanding microstructure. The fabrication method modifies the exposure process for SU-8, an negative-acting, ultraviolet-sensitive photoresist used for microfabrication whereby a UV-absorbent glass substrate, chosen for complete absorption of UV radiation at 380 nanometers or less, is coated with a negative photoresist, exposed and developed according to standard practice. This UV absorbent glass enables the fabrication of cylindrical cavities in a negative photoresist microstructures that have aspect ratios of 8:1.

Abstract: An improved light attenuating compound for use in the production of microdevices is provided. Broadly, the light attenuating compound is difunctional and can be directly incorporated (either physically or chemically) into photolithographic compositions such as anti-reflective coatings (ARC) and contact or via hole fill materials. The preferred light attenuating compound comprises functional groups electronically isolated from the light absorbing moieties of the compound. As a result, the spectral properties of the compound are not negatively affected when the functional groups form bonds with other compounds during polymerization or crosslinking.

Abstract: A developer used for the formation of a resist pattern from a resist resin based on a halogenated alkylstyrene, wherein the developer is a mixture of a solvent regarded as a good solvent and a solvent regarded as a poor solvent for the resist resin based on a halogenated alkylstyrene. The developer is useful for the formation of photomasks, including various masks and reticles used to form various device patterns in a semiconductor product, a plasma display panel (PDP), a liquid crystal display (LCD) or the like. A method of forming a resist pattern using the developer is also disclosed. In addition, a photomask produced using the developer and the method is disclosed.

Abstract: When selectively exposing a resist layer with vacuum ultraviolet rays for patterning into a predetermined shape, the present invention utilizes a polymer material constituting the resist layer and having at least one alicycle which is a saturated n-member ring (n is a number of carbon atoms constituting the ring and is an even number) and a fluorine substitution group in at least two carbon atoms constituting the alicycle and arranged alternately. Thus, by improving the light transmission ratio of the resist layer in the vacuum ultraviolet ray wavelength region, it becomes possible to perform a super-fine processing which cannot be obtained in the conventional method.

Abstract: Disclosed is a novel positive-working chemical-amplification photoresist composition capable of giving an extremely finely patterned resist layer in the manufacturing process of semiconductor devices and a method for forming a finely patterned resist layer therewith. The photoresist composition comprises: (A) 100 parts by weight of a copolymeric resin consisting of from 50 to 85% by moles of (a) hydroxyl group-containing styrene units, from 15 to 35% by moles of (b) styrene units and from 2 to 20% by moles of (c) tert-butyl (meth)acrylate units; and (B) from 1 to 20 parts by weight of a radiation-sensitive acid-generating agent which is an onium salt containing a fluoroalkyl sulfonate ion having 1 to 10 carbon atoms as the anion such as diphenyliodonium trifluoromethane sulfonate. In the pattern-forming method with the photoresist composition, the photoresist coating layer is subjected to heat treatments before and after the pattern-wise exposure to light at a relatively low temperature of 100-110 ° C.

Abstract: A positive resist composition is provided which comprises a resin having 2-alkyl-2-adamantyl (meth)acrylate polymerization unit represented by the following formula (I): wherein R1 represents hydrogen or methyl and R2 represents an alkyl, and being insoluble or barely soluble in alkali, but being converted to soluble in alkali by the action of an acid; and an acid generator represented by the following formula (V): wherein Q1, Q2 and Q3 independently represent hydrogen, a hydroxyl group, an alkyl having 1 to 6 carbon atoms or an alkoxy having 1 to 6 carbon atoms, and n is an integer of 4 to 8; and gives a good resolution upon exposure by ArF excimer laser and has little substrate dependency.

Abstract: A chemical amplifying type positive resist composition which provides a resist pattern having an exceedingly improved line edge roughness, and is excellent in various resist performances such as dry etching resistance, sensitivity and resolution; and comprises: (A) an acid generator containing (a) a sulfonium salt represented by the following formula (I):  wherein Q1 and Q2 is alkyl or a cycloalkyl, or Q1 and Q2 form, together with a sulfur atom to which Q1 and Q2 are adjacent, an heteroalicyclic group; Q3 represents a hydrogen atom, Q4 represents alkyl or a cycloalkyl, or Q3 and Q4 form, together with a CHC(O) group to which Q3 and Q4 are adjacent, a 2-oxocycloalkyl group; and Q5SO3− represents an organosulfonate ion, and (b) at least one onium salt selected from a triphenylsulfonium salt represented by the following formula (IIa), and a diphenyliodonium salt represented by the following formula (IIb):  wherein P1 to P5 represent hydrogen, a hydroxyl group

Abstract: Disclosed is a novel undercoating solution for the formation of an antireflection undercoating layer to intervene between the surface of a substrate and a photoresist layer to be patterned in the manufacturing process of semiconductor devices with an object to prevent adverse influences of the light reflecting at the substrate surface on the cross sectional profile of the patterned resist layer.

Abstract: A resist composition contains a base resin, a photoacid generator, and a solvent. The photoacid generator is a sulfonium salt of formula (1). R1 is a monovalent cyclic or bridgedring C3-20, hydrocarbon group, R2 is hydroxyl, nitro, halogen, or a straight, branched or cyclic monovalent C1-15 hydrocarbon group which may contain O, N, S or halogen atom, K− is a non-nucleophilic counter ion, x is equal to 1 or 2, and y is an integer of 0-3. The resist composition is sensitive to ArF excimer laser light, has good sensitivity and resolution, and forms a thick film which is advantageous in etching.

Abstract: The present invention relates to a polymer with at least one pericyclic protective group such as 2-methyl-2-bicyclo[2,2,1]heptanyl. The resist composition containing the polymer can be used as a chemically amplified resist and exhibits strong etch resistance. In addition, a line-and-space pattern of 0.1 &mgr;m pitch can be resolved successfully using the resist composition.

Abstract: The present invention provides photoresist resins and photoresist compositions comprising the same, which are useful in a resist flow process. The present invention also provides a process for forming a contact hole pattern using the same. In particular, the photoresist resin of the present invention comprises a mixture of polymers. Preferably, a mixture of a first copolymer and a second copolymer. In one aspect, the first and the second copolymers have different properties. Photoresist compositions of the present invention can be used to reduce or eliminate photoresist overflow during a resist flow process. In addition, photoresist compositions of the present invention allow formation of uniform sized patterns and improve standing wave effect.

Abstract: An apparatus and method for developing a selectively exposed resist pattern, on an integrated circuit wafer, which avoids damage to the resist pattern and allows greater freedom in the choice of resists. Developer is placed on a selectively exposed layer of resist for a first time. The layer of resist and developer are then immersed in a cleaning liquid time for a second time to stop the developing action and remove the developer. As an option, ultrasonic power can be delivered to the wafer or the cleaning liquid while the layer of resist is immersed in the cleaning liquid. The cleaning liquid is then removed from the layer of resist, now a resist-pattern, and the wafer and resist pattern is placed in a vacuum for drying. As another option, heat can be applied to the wafer and resist pattern while they are in the vacuum. The wafer and resist pattern are then removed from the vacuum for further processing.

Abstract: A chemically amplified positive resist composition capable of giving a resist film excellent in adhesion to a substrate; excellent in various resist performance characteristics such as dry etching resistance, sensitivity and resolution; and comprising a resin (X) which, per se, is insoluble or slightly soluble in alkali but becomes soluble in alkali due to an action of acid, and has a polymeric unit (a) derived from 3-hydroxy-1-adamantyl(meth)acrylate and a polymeric unit (b) derived from &bgr;-(meth)acryloyloxy-&ggr;-butyrolactone wherein the lactone ring may optionally be substituted by alkyl; and an acid generating agent (Y).