Abstract: The present invention relates to a silicon-containing copolymer which includes a maleic anhydride repeating unit, a norbornene repeating unit, and at least one silicon group-containing norbornene repeating unit. The silicon-containing copolymer is suitable for use as a top layer resist in a bilayer resist system.

Abstract: The present invention provides a high sensitivity chemically amplified positive-working resist composition which eliminates edge roughness on pattern and provides an excellent resist pattern profile. A novel positive-working resist composition is provided comprising (A) a resin containing an alkali-soluble group protected by at least one of moieties containing alicyclic hydrocarbon represented by general formulae (pI) to (pVI) and having a monomer component content of 5% or less of the total pattern area as determined by gel permeation chromatography (GPC), which increases in its solution velocity with respect to an alkaline developer by the action of an acid and (B) a compound which is capable of generating an acid by irradiation with an active ray or radiation.

Abstract: New photoacid generator compounds (“PAGs”) are provided and photoresist compositions that comprise such compounds. In particular, ionic PAGs are provided that include tri-naphthyl sulfonium, thienyl iodonium, thienyl sulfonium, pentafluorophenyl iodonium and pentafluorophenyl sulfonium compounds. PAGs of the invention are particularly useful as photoactive components of photoresists imaged at short wavelengths such as sub-300 nm, sub-200 nm and sub-160 nm such as 248 nm, 193 nm and 157 nm.

Abstract: A visible radiation sensitive composition is disclosed. The composition comprises at least one ethylenically unsaturated monomer capable of free radical initiated addition polymerization; optionally, at least one binder; and a photoinitiator system comprising a coinitiator and a cyanopyridone sensitizer. The coinitiator preferably comprises a metallocene and an onium compound.

Abstract: A polymer having fluorinated vinyl phenol units copolymerized with acrylonitrile units has high transmittance to VUV radiation. A resist composition using the polymer as a base resin has high sensitivity and resolution to high-energy radiation and good plasma etching resistance and is suited for lithographic microprocessing.

Abstract: Photoresist monomers, photoresist polymers prepared therefrom, and photoresist compositions using the polymers are disclosed. More specifically, photoresist polymers comprising a photoresist monomer containing fluorine-substituted benzylcarboxylate represented by Formula 1, and a composition comprising the polymer are disclosed. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and can be developed in aqueous tetramethylammonium hydroxide (TMAH) solution. And, the present photoresist composition is suitable to form a fine pattern using deep ultraviolet light source such as VUV (157 nm), since the composition has low light absorbance at 193 nm and 157 nm wavelength. wherein, X1, X2, R1, l and m are defined in the specification.

Abstract: Polymerizable monomers having silicon containing groups that are transparent at 193 nm; and ethylenically unsaturated group are provided. Polymers from these monomers can be used in processes for forming sub-100 nm images with a chemically amplified, radiation sensitive bilayer resist. The bilayer resist is disposed on a substrate and comprises (i) a top imaging layer comprising a radiation sensitive acid generator and (ii) an organic underlayer. The bilayer resist can be used in the manufacturing of integrated circuits.

Abstract: A negative resist composition, comprising: (a) silicon-containing polymer with pendant fused moieties selected from the group consisting of fused aliphatic moieties, homocyclic fused aromatic moieties, and heterocyclic fused aromatic and sites for reaction with a crosslinking agent, (b) an acid-sensitive crosslinking agent, and (c) a radiation-sensitive acid generator is provided. The resist composition is used to form a patterned material layer in a substrate.

Abstract: A positive resist composition comprising: (A) a compound which generates an acid upon irradiation with active light or radiant ray, and (B) a resin which exhibits increased solubility in an alkali by action of an acid and includes a copolymer including (b-1) 40% to 85% by mole of a unit having an alkali-soluble group, (b-2) 3% to 25% by mole of a unit having (i) an acid-decomposable dissolution-inhibiting group and (ii) a group which accelerates dry-etching resistance, and (b-3) 3% to 40% by mole of a unit having an acid-decomposable dissolution-inhibiting group and being other than the units (b-1) and (b-2). This composition is a chemically amplified positive resist composition that can be applied to a resist having a reduced thickness, is excellent in dry-etching resistance and definition and can form a patterned resist with a good sectional shape.

Abstract: Disclosed are new photoresist compositions including polymeric particles as binders and a photoactive component. Also disclosed are methods of forming relief images using these photoresist compositions.

Abstract: A pattern formation material of this invention contains a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator: wherein R1 and R2 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a chlorine atom; R3, R4, R5 and R6 are a hydrogen atom or a fluorine atom, at least one of which is a fluorine atom; and R7 is a protecting group released by an acid.

Abstract: A photoresist composition comprising a binder component, an acid generator and a surface active agent containing fluorine atom(s) is provided, and the photoresist composition reduces development deficiency generated at the time of development significantly without lowering the resolution, the profile, or the like. The surface active agent is poly trifluorobutyl methyl siloxane.

Abstract: A thin film composite material is disclosed which includes an antireflection layer (6) interposed between a metal layer (2) and a transparent layer (1). The antireflection layer (6) reduces reflection of light by the metal layer (2) when light reaches the metal layer (2) after passing through the transparent layer (1) and the antireflection layer (6). The antireflection layer (6) has an index of refraction greater than 2.5 and an extinction coefficient which is less than 0.5 at 600-1200 nm wavelengths. Suitable materials for the antireflection layer (6) include oxides of copper (especially cuprous oxide), Iran II oxide and SiC. The antireflection layer (6) is advantageously applied so that it has an optical thickness of one quarter wavelength with respect to the wavelength of the light which is to be antireflected. The metal layer (2) is made from a gray low reflectance type metal such as Ti, Zr, Hf, Cr, Mo, W, Ni, Pd, or Pt or alloys of these metals.

Abstract: A photosensitive polymer is provided which includes: (a) perfluoro-2,2-dimethy-1,3-dioxol derivatives having the following repeating unit: and (b) vinyl derivatives having the following repeating unit: wherein R1 is H, Cl, or F; each of R2 and R3 is H or F; R4 is H, F, CF3, OCF3, OCF2CF3, OCF2CF2CF3, CH2C(CF3)2OH, fluorinated alkyloxy group having an acid-labile group, n-perfluoroalkyl group having 1 to 8 carbon atoms, ORF, wherein RF is n-perfluoroalkyl group having 1 to 3 carbon atoms, or OQZ, wherein Q is perfluorinated alkylene group having 0 to 5 oxygen atoms, the sum of carbon atom and oxygen atom in the Q is 2 to 10, and Z is COOR, SO2F, CN, COF, or OCH3, wherein R is alkyl group having 1 to 4 carbon. A photoresist composition includes the photosensitive polymer and a photoacid generator(PAG).

Abstract: Photoresist compositions which are useful in a resist flow process are disclosed. A process for forming a contact hole pattern using the disclosed photoresist compositions is also disclosed. The disclosed photoresist resin includes a mixture of two or more polymers. Preferably, a mixture of a first copolymer and a second copolymer are cross-linked, and thus it prevents a contact hole from being collapsed due to over flow which is typically observed during a conventional resist flow process. In addition, the disclosed photoresist compositions allow formation of uniform sized patterns.

Abstract: Photoresist monomers of following Formula 1, photoresist polymers thereof, and photoresist compositions using the same. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. In addition, the photoresist composition has low light absorbance at the wavelength of 193 nm, 157 nm and 13 nm, and thus is suitable for a photolithography process using ultraviolet light sources such as VUV (157 nm) and EUV (13 nm) in fabricating a minute circuit for a high integration semiconductor device. wherein, R1, R2, R3, Y, W, m and n are as defined in the specification.

Abstract: A photosensitive polyimide composition which is soluble in an organic solvent, which is excellent in adhesiveness, heat resistance, mechanical properties and flexibility, which shows the property of highly sensitive positive-type photoresist that is soluble in alkali upon irradiation with light is disclosed. The polyimide composition of the present invention contains a photoacid generator and a solvent-soluble polyimide which shows positive-type photosensitivity in the presence of said photoacid generator.

Abstract: A precursor for preparing a resist pattern comprises an imageable layer which includes a relatively volatile compound that can be volatilized by application of heat, wherein imaging radiation can be applied to the precursor to heat areas thereof and volatilizes said compound so that properties, for example, the ink accepting abilities of heated and non heated areas, are different.

Abstract: Photoresist polymers having nitro groups (—NO2), and photoresist compositions containing the same. A photoresist pattern having excellent endurance, etching resistance, reproducibility and resolution can be formed by the use of the photoresist copolymer comprising polymerization repeating units represented by Chemical Formula 1a or 1b: wherein, R1, a, b, c, d, e, f, g and h is defined in the specification. Having nitro groups in the polymer, the photoresist polymer results in a low absorbance in the range of 157 nm wavelength, so that it is extremely useful for a photolithography process using, in particular, VUV light source.

Abstract: The invention relates to a process for forming bilayer resist images with a chemically-amplified, radiation-sensitive bilayer resist. The bilayer resist is disposed on a substrate and comprises (i) a top imaging layer comprising a radiation-sensitive acid generator and a vinyl polymer having an acid-cleavable silylethoxy group and (ii) an organic underlayer. The bilayer resist is used in the manufacture of integrated circuits.