Abstract: A layered oxide superconductor prepared by depositing a superconductor precursor powder on a continuous length of a first substrate ribbon. A continuous length of a second substrate ribbon is overlaid on the first substrate ribbon. Sufficient pressure is applied to form a bound layered superconductor precursor powder between the first substrate ribbon and the second substrate ribbon. The layered superconductor precursor is then heat treated to establish the oxide superconducting phase. The layered oxide superconductor has a smooth interface between the substrate and the oxide superconductor.

Abstract: A method of forming an electrical contact to a substrate includes, a) placing a substrate having a silicon node to which electrical connection is to be made within a chemical vapor deposition reactor; b) injecting a first titanium organometallic precursor to within the reactor having the substrate positioned therein, and maintaining the reactor at a temperature and a pressure which in combination are effective to deposit a first layer comprising titanium nitride onto the substrate over the node to a first thickness, the first layer of titanium nitride having incorporated carbon from the first titanium organometallic precursor, the first layer and silicon node defaming a contact interface therebetween; c) after depositing the first layer, ceasing to inject the first titanium organometallic precursor into the reactor and first injecting a first component gas into the reactor and generating a first plasma from the first component gas within the reactor against the first layer, the first component gas and first p

Abstract: A flat substrate polishing and polishing pad conditioning head for a chemical-mechanical-planarization apparatus is provided which has been shown to double the useable life of a polishing pad used to planarize and/or polish both oxide and metal outer layers in the processing of semiconductor wafers and to provide for more uniform polishing during the life of the polishing pad. The polishing pad conditioning head comprises a suitable substrate (26), a diamond grit (28) that is evenly distributed over the surface of the substrate (26) and a CVD diamond (30) grown onto the diamond grit (28) and the substrate (26) so that the diamond grit (28) becomes encased in the CVD diamond (30) and bonded to the surface of the substrate (26). The method for evenly distributing a mono-layer of diamond grit in a highly uniform manner over the exposed surface of a substrate can be done either by using diamond grit applied over a photoresist pattern or a screen printed pattern, or using diamond grit from a liquid mixture.

Abstract: In a chemical vapor deposition process a surface layer is formed on an antireflective layer to prevent amines in the antireflective layer from neutralizing acid components formed during the exposure of an overlying photoresist layer. The surface layer is formed by introducing an oxygen-containing gas such as N.sub.2 O into the CVD chamber in the presence of radio frequency power, after the antireflective layer has been formed.

Abstract: A plasma CVD is provided for film formation in which a support member is sufficiently cooled so as to suppress thermal deformation and abnormal discharge, thus enabling to preferably carry out the film formation.After a metal thin film is formed on a tape-shaped non-magnetic support member, the non-magnetic support member is made to travel continuously along a cooling can wile a thin film is formed on the metal thin film by way of the plasma CVD method, wherein the cooling can includes a metal can 12 having an outer circumferential surface which is entirely covered by an insulating layer 15 formed by a ceramic having a thickness of 0.3 to 1.0 mm.

Abstract: Provided are pyrolytic chemical vapor deposition techniques for producing thin silicone-like films by way of processes that eliminate electron impact, ion bombardment, and UV irradiation events. To form a silicone film on a surface of a structure in accordance with the invention, the structure surface is exposed to a substantially electrically neutral reactive gaseous phase that includes organosilicon molecular fragments, while the structure surface is maintained substantially at a temperature lower than that of the reactive gaseous phase. An organosilicon compound is exposed to a pyrolyzing environment, where the conditions of the pyrolyzing environment are characterized as producing, in the vicinity of the structure surface, a substantially electrically neutral reactive gaseous phase that includes organosilicon molecular fragments. The structure surface is maintained substantially at a temperature lower than that of the pyrolyzing environment.

Abstract: A thin film structure including a lanthanum aluminum oxide substrate, a thin layer of homoepitaxial lanthanum aluminum oxide thereon, and a layer of a nonlinear dielectric material thereon the thin layer of homoepitaxial lanthanum aluminum oxide is provided together with microwave and electro-optical devices including such a thin film structure.

Abstract: Coating system and method that allows coatings to be formed from a wide variety of coatable compositions that are entirely free of any solvents or, alternatively, have relatively little solvent in minor amounts effective to help dissolve one or more components of such compositions. A fluid composition is atomized and contacted with a carrier gas. The contacting occurs under conditions such that vaporization of substantially all of the atomized fluid composition occurs so as to form a vapor having a condensation temperature. The vapor is caused to flow to the surface of the substrate. The surface is at a temperature below the condensation temperature of the vapor. Consequently, the vapor condenses onto the surface to form the coating.

Abstract: The invention includes a low activity localized aluminide coating for a metallic article made by positioning a coating material, preferably in the form of a tape, on a portion of the article. The coating material comprises a binder, a halide activator, an aluminum source, and an inert ceramic material. The coating material and the article are heated in an inert atmosphere between about 1800.degree. F. (982.degree. C.) and about 2050.degree. F. (1121.degree. C.) for between about four and about seven hours thereby producing a low activity localized aluminide coating having an outward diffusion aluminide coating microstructure characterized by two distinct zones, an inner diffusion zone and an outer zone including between about 20-28 percent, by weight, aluminum.

Abstract: A method of manufacturing an insulating layer 30 (IMD layer) that has a uniform etch rate and forms improved via/contact opening profiles. The method forms a coating film 11 of silicon oxide over the chamber walls 22 of a CVD reactor. Next, the wafer 12 is loaded into the CVD reactor 20. A first insulating layer 30 composed of oxide preferably formed by a sub-atmospheric undoped silicon glass (SAUSG) using TEOS is formed over the semiconductor structure 12. Via/Contact Openings 32 are then etched in the insulating layer 30. The coating film 11 over the interior surfaces (e.g., reactor walls) 22 improves the etch rate uniformity of the first insulating layer 30. The first insulating layer 30 is preferably a inter metal dielectric (IMD) layer.

Abstract: In a method for the manufacture of a coating on a grinding tool, a rough diamond layer (8, 10) is produced as an abrasive layer on the surface (2) of the body (1) of the grinding tool by vapor-phase deposition. This diamond layer is deposited on the grinding tool by the Hot Filament Chemical Vapor Deposition (HF-CVD) process.

Abstract: Method is provided for forming CVD nano diamond films for use as cold cathodes in microelectronic devices. Conditions for forming the film outside the plasma region between the cathode and a grid anode are disclosed. Heating of the grid anode makes possible a combination of glow discharge and hot filament deposition.

Abstract: An inlet gas manifold for a vacuum deposition chamber incorporates inlet apertures which increase in diameter or cross-section transverse to the direction of gas flow. The aperture configuration increases the dissociation gases such as nitrogen and, thus increases the rate of silicon nitride deposition provided by nitrogen gas chemistry, without requiring the use of reactants such as ammonia. While one could use ammonia in the deposition gas chemistry if desired, the process provides the option of completely eliminating ammonia. The inlet manifold containing the increasing-diameter gas inlet holes provides enhanced control of the process and the deposited film, and is also useful for forming other dielectrics such as silicon oxide and silicon oxynitride. In particular, silicon oxynitride films are characterized by low hydrogen content and by compositional uniformity.

Abstract: A plasma CVD process for a metal film made from Ti or the like and a formation process of a metal nitride film made from TiN or the like. Each process solves problems on asymmetry of a film shape at an opening portion of a contact hole, corrosion of an underlaying material layer, remaining halogen in the film, and peeling of the film. In the plasma CVD using a mixed gas containing TiCl.sub.4, H.sub.2 and Ar, species for forming a Ti film is efficiently ionized and the Ti ions thus generated are made incident on a substrate to be processed in the direction substantially perpendicular to the substrate, to thus form a metal film being good in coverage. A metal nitride film having a specific thickness is formed by repeating the step of forming such a metal film and the step of nitriding the metal film by plasma nitriding.

Abstract: This invention discloses a method of manufacturing a diamond vacuum device, and more particularly a method of manufacturing a diamond vacuum device which uses a diamond thin film as an electron emitter by electric field. The present invention presents a method of manufacturing a vacuum device for use in high speed, high voltage, using diamond having a negative electron affinity, which can emit electrons even at a low voltage and is also resistant to chemical variations.

Abstract: An aluminum oxide film is deposited on a heated substrate by CVD from one or more alkylaluminum alkoxide compounds having composition R.sub.n Al.sub.2 (OR').sub.6-n, wherein R and R' are alkyl groups and n is in the range of 1 to 5.

Abstract: A method for depositing copper-based films and a copper source precursor for use in the chemical vapor deposition of copper-based films are provided. The precursor includes a mixture of at least one ligand-stabilized copper (I) .beta.-diketonate precursor; and at least one copper(II) .beta.-diketonate precursor. The method includes introducing into a deposition chamber: (i) a substrate; (ii) a copper source precursor in a vapor state including a mixture of at least one ligand-stabilized copper (I) .beta.-diketonate precursor; and at least one copper(II) .beta.-diketonate precursor; and (iii) at least one transport gas, different than said copper source precursor. The reaction substrate temperature is maintained at from about 50.degree. C. to about 500.degree. C. for a period of time sufficient to deposit a copper-based film on said substrate.

Abstract: A method for filling shallow trenches 28 with a HDPCVD oxide 50. The invention has two liners: (a) a thermal oxide liner 36 and (b) an overlying conformal O.sub.3 -TEOS protective liner 40. The O.sub.3 -TEOS protective liner 40 prevents the HDPCVD oxide 50 from sputter damaging the trench sidewalls and the masking layer 24. The O.sub.3 -TEOS layer has novel process temperature (400 to 560.degree. C.) and low pressure (40 to 80 torr) that allows the O.sub.3 -TEOS layer to deposit uniformly over thermal oxide liner 36. The method begins by forming pad oxide layer 20 and a barrier layer 24 over a substrate. A trench 28 is formed in the substrate 10 through the pad oxide layer 20 and the barrier layer 24. A thermal oxide liner 36 and a protective O.sub.3 -TEOS liner layer 40 are formed over the walls of the trench 28 and over the barrier layer 24. Lastly, a high density plasma chemical vapor deposition (HDPCVD) oxide layer 50 is formed over the protective liner layer 40 filling the trench 28.

Abstract: A method for enhancing the conductivity of transparent conductive electrodes on display substrates by providing patterned auxiliary metallic layers adjacent to the transparent conductive material. The method of the present invention eliminates the need for aligning the auxiliary metal layers with preexisting transparent conductive electrodes by providing for simultaneous patterning of the auxiliary metal layers and formation of the independently addressable electrodes.

Abstract: A process for producing thin films of oxide ceramic by deposition of metal oxides on a surface. An accelerator is added to initiate oxidation of organometallic precursors.