Abstract: A process for at least partially reducing iron oxides comprises forming a bed of reactants on a hearth of a rotary hearth furnace, the reactants comprising (a) mixture of iron ore fines and particulate carbonaceous material and/or (b) micro-agglomerates of iron ore fines and particulate carbonaceous material. The mixture and/or the micro-agglomerates are heated in the rotary hearth furnace to at least reduce the iron oxides. The "micro-agglomerates" are agglomerates that are less than 1400 microns (and preferably more than 500 microns) in diameter. The at least partially reduced product is preferably used in the production of metallic iron. An apparatus for at least partially reducing iron oxides is also claimed. The process permits operation of the rotary hearth furnace without requiring pelletisation of iron oxides fines and coal.

Abstract: An implant patterned superconductive device and a method for indirect implant-patterning of oxide superconducting materials is provided. The method forms a device having an oxide superconducting layer on a substrate, deposits a passivation layer atop the oxide superconducting layer, and implants chemical impurities in a selected portion of the superconducting layer through the passivation layer. This modifies the conductivity of the selected portion of the oxide superconducting layer and electrically isolates the selected portion from the non-selected portion of the oxide superconducting layer. The passivation layer is made of a material less susceptible to implant damage than the oxide superconducting layer to allow inhibition of the oxide superconducting layer while protecting the crystalline structure of the top surface of the oxide superconducting layer and keeping it planarized.

Abstract: The present invention provides a metal containing compound reduction and melting process which entails feeding a burden made of a mixture of the metal containing compound and a suitable reductant in particulate form into an electrically heatable vessel which contains a bath of the metal in liquid form so that a reaction zone is formed in the burden in which the metal containing compound is reduced and a melting zone is formed below the reaction zone in which the reduced metal is melted; and controlling the process in such a manner that substantially all of the reduction of the metal containing compound takes place in the solid phase.

Abstract: The present invention comprises a method for coating at least one substrate with a carbonitride-containing coating by a MT CVD process which includes heating a substrate or substrates to a reaction temperature in a reaction chamber and then introducing into the reaction chamber a deposition process gas comprising from about 1 to about 30% of a hydrogen halide and predetermined amounts of a carbon/nitrogen source, a metal-halogen compound, H.sub.2, and optionally N.sub.2 so that a layer of the carbonitride-containing coating deposits on the surface of the substrates or substrates. The present invention also includes embodiments for coating at least one substrate with a carbonitride-containing coating by a MT CVD process which includes maintaining a temperature gradient in the reaction chamber during the introduction of the deposition process gas into the reaction chamber.

Abstract: A method for producing a superconducting thick film involves the steps of forming a thick layer comprising a superconducting material on a substrate; firing the thick layer formed on the substrate; subjecting the fired thick layer to cold isostatic pressing; and refiring the thick layer subjected to cold isostatic pressing.

Abstract: An improved method for modifying slag in an electric arc furnace comprising introducing into the slag, or on top of the slag, vermiculite platelets which have been refined into concentrated form whereby the flakes comprise at least 50%, and more preferably at least 80%, by dry weight hydrated magnesium aluminum (iron) silicate.

Abstract: A process for forming a refractory metal thin film on a substrate by subjecting a gaseous mixture containing a halide of a refractory metal and the hydrogen gas to a plasma chemical vapor deposition, comprising the step of adjusting a mixing ratio of the halide of the refractory metal to the hydrogen gas to a relatively small value at an initial stage of the process and, subsequent to the initial stage of the process, adjusting the mixing ratio of the halide of the refractory metal to the hydrogen gas to a relatively large value.

Abstract: A method for depositing refractory alumina (A.sub.2 O.sub.3) thin layers on cutting tools made of cemented carbide, cermet, ceramics or high speed steel is disclosed. The present method is a Plasma Activated Chemical Vapor Deposition (PACVD) process in which the plasma is produced by applying a bipolar pulsed DC voltage across two electrodes to which the tool substrates to be coated are fixtured and electrically connected.In contrast to prior art methods, built-up electrical charge on non-conducting surfaces is suppressed and hence, no arcing occurs on said surfaces. This will permit stable, long-term processing,With the present method, high-quality coatings of either single phase gamma-Al.sub.2 O.sub.3 or of a mixture of gamma- and alpha-Al.sub.2 O.sub.3 phases can be deposited on cutting tools at deposition temperatures as low as 500.degree. C.

Abstract: A method for refining a titanium metal containing ore such as rutile or illmenite or mixtures to produce titanium ingots or titanium alloys and compounds of titanium involves production of titanium tetrachloride as a molten slag, by processing the ore in a chlorination procedure and removing various impurities by a distillation or other procedure to form a relatively pure titanium tetrachloride (TiCl.sub.4). Thereafter, the titanium tetrachloride is introduced into the plasma focal point of a plasma reactor in a molten sodium environment for the initial reduction of gas phase titanium into titanium molten drops which are collected by a set of skulls. Thereafter, further processing are carried out in higher vacuum and the titanium is heated by electron beam guns in order to maximize titanium purity and, in a final optional stage, alloying compounds are added under yet higher vacuum and high temperature conditions.

Abstract: A process for processing electric steelworks dusts containing oxidized high-iron, zinc-bearing materials in order to recover iron and zinc from [them] said dusts. The process includes the steps of: feeding the dusts to an induction furnace partially filled with a charge of metal or alloy to be smelted, wherein the charge is present as a molten bath that is made turbulent by induced currents; contacting the dusts with a surface of the turbulent molten bath inside the furnace; and reducing zinc and iron oxides contained in the dusts inside the furnace, while oxidizing zinc and carbon monoxide rising from the bath.

Abstract: The invention is directed to a process for dehydrating and recycling back into a BOF converter wet BOF scrubber sludge to produce a steelmaking revert having an improved flow rate when handled in a recycle stream. Wet sludge is combined with hot BOF slag to provide a slag/sludge mixture. The wet sludge causes the mixture to have a moisture content greater than 10% water by weight, and the hot slag, having a temperature below the molten liquid state, vaporizes the water in the mixture and reduces the moisture content to about 4% water by weight or less. The dehydrated mixture has improved flow rate properties when it is recycled as a steelmaking revert.

Abstract: An object such as an automobile part, an image forming apparatus part, a bicycle part, other machine parts, a sport article or its part, a toy or its part, or a rain article or its part has a portion to be in contact with a contact object. The contact portion is made of at least one kind of material selected from a group including polymer material such as resin or rubber as well as glass, and the contact portion has a surface entirely or partially coated with a carbon film (typically, a DLC film) having a wear resistance as well as at least one of a lubricity, a water repellency and a gas barrier property. The carbon film is formed on the object with a good adhesion.

Abstract: The present invention relates to a method of formation of an Si.sub.1-x Ge.sub.x MOS transistor gate where x is higher than 50%, on an silicon oxide gate insulator layer, consisting of depositing an Si.sub.1-y Ge.sub.y layer of thickness lower than 10 nm, where 0<y<30%; and depositing an Si.sub.1-z Ge.sub.z layer of desired thickness, where z>50%. The desired thickness ranges, for example, between 20 nm and 200 nm. x and z range, for example, between 80% and 90%.

Abstract: A method for producing homoepitaxial diamond thin film is provided which includes a step of effecting plasma assisted CVD with the carbon source concentration of a mixed gas of a carbon source and hydrogen set to a first low level for depositing a high-quality homoepitaxial diamond thin film on a substrate at a low film forming rate and a step of thereafter effecting the plasma assisted CVD with said carbon source concentration set to a second level higher than the first level.

Abstract: An apparatus and a method of forming a thick polysilicon layer are provided. An additional pipeline is introduced into a chamber that is used for depositing polysilicon layers. A thin silicon dioxide film is formed using oxygen after forming a first doped polysilicon layer with a constant thickness. Then a second doped polysilicon layer with a constant thickness is deposited on the thin silicon dioxide layer. The steps described above are repeated until a desired thickness is attained.

Abstract: A method of forming an electroluminescent device comprising the steps of providing a substrate having a top surface coating with a material including an anode having indium-tin-oxide; and forming an amorphous conductive layer over the anode by providing a fluorocarbon gas in a radical source cavity and subjecting such fluorocarbon gas to a reduced pressure in a range of 0.1 to 20 MT; applying an RF field across the fluorocarbon gas in the radical source cavity to form a plasma having CF.sub.x radicals; depositing the CF.sub.x radicals onto the anode forming an amorphous CF.sub.x conductive polymer layer on the anode; and forming a plurality of layers over the amorphous CF.sub.x conductive polymer layer with such layers including at least one organic electroluminescent layer and a cathode over the electroluminescent layer.

Abstract: A process and apparatus for the gelatin coating of medicaments which includes a continuous conveyer system to advance a plurality of pallets through a loading station, at least one dipping station, at least one dryer station, a reorientation station and an unloading station. Medicaments to be coated are loaded into pallets at the loading station and advanced to the first dipping station where a vacuum is applied to secure the medicament to the pallet. The pallet is inverted and a first portion of each of the medicaments is dipped into a coating mixture. The pallet is then returned to its upright position, the vacuum is removed and the coating is dried. The medicaments are then transferred from the first pallet to a second pallet by a reorientation mechanism. The second pallet is then advanced to a second dipping station which operates in the same manner as the first dipping station.

Abstract: A method of forming an aluminum-based layer mainly including aluminum on a surface of an insulating layer and within a hole formed in the insulating layer. The method includes the steps of: carrying out a chemical vapor deposition to deposit the aluminum-based layer on the surface of the insulating layer and also to incompletely fill the hole to not less than 75% by volume of the hole by use of a source including at least one of alkyl groups and hydrogen so that a surface of the aluminum-based layer is terminated by the at least one of alkyl groups and hydrogen included in the source, and so that the surface of the aluminum-based layer is free of any natural oxide film; and carrying out a heat treatment, without formation of any natural oxide film on the surface of the aluminum-based layer, for causing a re-flow of the aluminum-based layer, whereby the at least one of alkyl groups and hydrogen promotes a migration of aluminum atoms on the surface of the aluminum-based layer.

Abstract: A thermal barrier coating system and a method for forming the coating system which yields a thermal barrier coating having good adhesion to a bond coat overlying a metal superalloy substrate. The adhesion of the bond coat and the thermal barrier coating is enhanced by forming a mature .alpha.-alumina (Al.sub.2 O.sub.3) scale at the bond coat-TBC interface. The desired mature .alpha.-alumina scale can be obtained by utilizing one or more of the following steps: preoxidation of the bond coat at certain minimum temperatures and durations; inoculation of the surface of the bond coat; surface doping or alloying of the bond coat surface; and the addition of noble metals to the bond coat. Each of these steps promotes the formation of .alpha.-alumina and avoids the formation of the .gamma., .delta. and .theta.-alumina phases which undergo phase transformations at elevated temperatures, with the result that a more spallation-resistant thermal barrier coating system is obtained.

Abstract: In order to guarantee that individual elastomeric components used for medicinal or pharmaceutical purposes have improved inertness and static and sliding friction properties, a suitable layer is provided on the elastomeric components for this purpose by the method of the invention. This method includes providing an extended flat mat made of elastomeric material including connected protruding elastomeric components; coating at least one side of the mat including the connected elastomeric components by means of a PECVD or PICVD method to provide a silicon dioxide layer containing carbon, hydrogen and/or nitrogen on the at least one side of the mat; and punching the connected elastomeric components out of the mat to form individual unconnected elastomeric components, each at least partially coated with a portion of the layer.